TSM2NB65 Taiwan Semiconductor N-Channel Power MOSFET 650V, 2.0A, 5Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% UIS & Rg tested PARAMETER VALUE UNIT VDS 650 V RDS(on) (max) 5 Ω Qg 13 nC ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATION ● Power Supply ● AC/DC LED Lighting TO-251 (IPAK SL) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current ID TC = 100°C (Note 1) 2.0 1.4 A IDM 8.0 A PDTOT 65 W EAS 25 mJ IAS 1.6 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.9 °C/W Junction to Ambient Thermal Resistance RӨJA 62.5 °C/W Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy Single Pulsed Avalanche Current (Note 2) (Note 2) Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 1 Version: A1511 TSM2NB65 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 650 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 2.5 4 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID = 1A RDS(ON) -- 4 5 Ω Forward Transfer Conductance VDS = 10V, ID = 1A gfs -- 2.5 -- S Qg -- 13 -- Qgs -- 2.2 -- Qgd -- 5 -- Ciss -- 390 -- Coss -- 31 -- Crss -- 8 -- Rg 0.8 2.5 7.5 td(on) -- 8.2 -- tr -- 23.2 -- td(off) -- 38 -- tf -- 27 -- VSD -- -- 1.2 Dynamic (Note 4) Total Gate Charge VDS = 520V, ID = 2A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching F = 1.0MHz f = 1.0MHz, open drain nC pF Ω (Note 5) Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 2A, Turn-Off Delay Time VDD = 325V, RG =25Ω Turn-Off Fall Time Source-Drain Diode ns (Note 3) Diode Forward Voltage IS = 2A, VGS = 0V V Notes: 1. Pulse width limited by the maximum junction temperature 2. L = 20mH, IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Essentially Independent of Operating Temperature. o 2 Version: A1511 TSM2NB65 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM2NB65CH X0G TO-251S 75pcs / Tube TSM2NB65CP ROG TO-252 2,500pcs / 13” Reel 3 Version: A1511 TSM2NB65 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V 1.5 VGS=4V 1 2 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics 2 0.5 1.5 1 0.5 150℃ 25℃ 0 0 0 2 4 6 8 VDS, Drain to Source Voltage (V) 0 10 1 On-Resistance vs. Drain Current 4 5 10 5 4 3 VGS=10V 2 1 VDS=520V ID=2A 8 6 4 2 0 0 0 0.5 1 1.5 2 2.5 3 0 3 6 9 12 15 Qg, Gate Charge (nC) ID, Drain Current (A) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3 10 IS, Reverse Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 3 Gate-Source Voltage vs. Gate Charge 6 VGS, Gate to Source Voltage (V) RDS(ON)(Ω), Drain-Source On-Resistance 2 VGS, Gate to Source Voltage (V) 2.5 2 1.5 1 VGS=10V ID=1A 0.5 25℃ 150℃ 1 0.1 0 -50 0 50 100 0 150 0.2 0.4 0.6 0.8 1 VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1511 TSM2NB65 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage 800 C, Capacitance (pF) 700 600 500 CISS 400 300 200 COSS 100 CRSS 0 0 5 10 15 20 1.6 1.4 ID=250uA 1.2 1 0.8 0.6 0.4 -50 25 0 50 100 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area (TO-251/252) 10 ID, Drain Current (A) RDS(ON) 1 0.1 SINGLE PULSE RӨJC=1.9°C/W TC=25°C 0.01 10 100 1000 VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case (TO-251/252) Normalized Effective Transient Thermal Impedance 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 0.1 0.01 0.0001 0.001 0.01 0.1 SINGLE PULSE RӨJC=1.9°C/W 1 t, Square Wave Pulse Duration (sec) 5 Version: A1511 TSM2NB65 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251S MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 6 Version: A1511 TSM2NB65 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 7 Version: A1511 TSM2NB65 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: A1511