T40HF..., T70HF..., T85HF..., T110HF... Series Vishay Semiconductors Power Rectifier Diodes (T-Modules), 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC D-55 • Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY IF(AV) 40 A to 110 A Type Modules - Diode, High Voltage These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS T40HF T70HF T85HF T110HF UNITS 40 70 85 110 A 85 85 85 85 °C 63 110 134 173 A 50 Hz 570 1200 1700 2000 60 Hz 600 1250 1800 2100 50 Hz 1630 7100 14 500 20 500 60 Hz 1500 6450 13 500 18 600 16 300 70 700 148 700 204 300 TC IF(RMS) IFSM I2t A I2√t A2s A2√s VRRM 100 to 1200 V TJ - 40 to 150 °C Document Number: 93587 Revision: 20-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes (T-Modules), 40 A to 110 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 150 20 200 300 40 400 500 60 600 700 T40HF... T70HF... T85HF... T110HF... 80 800 900 100 1000 1100 120 1200 1300 IRRM MAXIMUM AT TJ = 25 °C μA 100 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current IF(AV) TEST CONDITIONS IF(RMS) t = 8.3 ms IFSM t = 10 ms I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t T110HF UNITS 40 70 85 110 A 85 85 85 85 °C 63 110 134 173 A No voltage reapplied 570 1200 1700 2000 600 1250 1800 2100 480 1000 1450 1700 500 1050 1500 1780 1630 7100 14 500 20 500 1500 6450 13 500 18 600 1150 5000 10 500 14 500 1050 4570 9600 13 200 A t = 10 ms t = 8.3 ms Maximum I2t for fusing T85HF 180° conduction, half sine wave t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current T40HF T70HF 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum 0.66 0.76 0.68 0.68 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ maximum 0.84 0.95 0.90 0.86 rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum 4.3 2.4 1.76 1.56 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ maximum 3.1 1.7 1.08 1.12 IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square pulse Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.30 1.35 1.27 1.35 www.vishay.com 2 VFM A2√s V Low level value of forward slope resistance Maximum forward voltage drop A2s mΩ For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V Document Number: 93587 Revision: 20-May-10 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes (T-Modules), 40 A to 110 A Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS Maximum peak reverse leakage current IRRM TJ = 150 °C RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted TJ = 25 °C, t = 1 s 15 15 20 20 mA 3500 3500 3500 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range T40HF T70HF T85HF T110HF TJ, TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface smooth, flat and greased to heatsink Mounting torque, ± 10 % VALUES TEST CONDITIONS 1.36 terminals Approximate weight 0.62 °C 0.47 K/W 0.2 M3.5 mounting screws (1) Non-lubricated threads 0.69 UNITS 1.3 ± 10 % Nm M5 screw terminals 3 ± 10 % See dimensions - link at the end of datasheet 54 Case style g T-module (D-55) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound ΔR CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° T40HF... 0.12 0.14 0.18 0.27 0.46 0.09 0.15 0.20 0.28 0.46 T70HF... 0.09 0.11 0.14 0.20 0.35 0.07 0.11 0.15 0.21 0.35 T85HF... 0.08 0.09 0.12 0.18 0.31 0.06 0.10 0.13 0.19 0.31 T110HF... 0.05 0.07 0.09 0.14 0.23 0.05 0.08 0.10 0.15 0.24 DEVICES UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93587 Revision: 20-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 T40HF..., T70HF..., T85HF..., T110HF... Series T40HF.. Series R thJC (DC) = 1.36 K/ W 140 130 120 Conduction Angle 110 100 90 30° 60° 80 90° 120° 180° 70 60 0 10 20 30 40 50 150 T40HF.. Series R thJC (DC) = 1.36 K/ W 140 130 120 Conduc tion Period 110 100 30° 90 60° 90° 80 120° 70 180° DC 60 0 10 20 30 40 50 60 70 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 45 R th SA W K/ .5 =0 3 W K/ 30 K/ W 1 35 2 W K/ 180° 120° 90° 60° 30° 40 5 1. K/ W RMS Limit 25 e lt -D 5K /W R 20 a Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Maximum Allowable Case Temperature (°C) Power Rectifier Diodes (T-Modules), 40 A to 110 A Vishay Semiconductors 7K /W Conduc tion Angle 10 K/ W 15 10 T40HF.. Series TJ= 150°C 5 0 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Average Forward Current (A) 70 DC 180° 120° 90° 60° 30° W K/ ta el -D 40 5 0. K/ W 2K /W = K/ W 1. 5 SA 50 1 th 60 R R Maximum Average Forward Pow er Loss (W) Fig. 3 - Forward Power Loss Characteristics 3K /W 30 RMSLimit Conduc tion Period 20 T40HF.. Series TJ = 150°C 10 5 K/ W 7 K/ W 10 K/ W 0 0 10 20 30 40 50 60 Average Forward Current (A) 0 70 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93587 Revision: 20-May-10 T40HF..., T70HF..., T85HF..., T110HF... Series At Any Ra ted Loa d Cond ition And With Rated VRRM App lied Following Surge. Initial TJ = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 500 450 400 350 300 250 200 T40HF.. Series 150 1 10 100 Vishay Semiconductors 150 T70HF.. Series R thJC (DC) = 0.69 K/ W 140 130 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 70 180° 60 0 10 20 30 40 50 60 70 80 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Current Ratings Characteristics 600 550 500 450 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J= 150°C No Voltage Reapplied Rated V RRM Reapplied 400 350 300 250 200 150 T40HF.. Series 100 0.01 0.1 1 150 T70HF.. Series R thJC (DC) = 0.69 K/ W 140 130 120 Conduc tion Period 110 100 30° 90 60° 80 90° 120° 180° 70 DC 60 0 20 40 60 80 100 120 Pulse Train Duration (s) Average Forward Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Current Ratings Characteristics 90 = A hS R t 0.3 W K/ 1.5 ta el -D K/ W 2K /W R RMS Limit 50 W K/ 60 1K /W W K/ 70 5 0. 180° 120° 90° 60° 30° 80 7 0. Maximum Average Forward Power Loss (W) Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temp erature (°C) 550 Maximum Allowable Case Temperature (°C) Peak Ha lf Sine Wave Forw ard Current (A) Power Rectifier Diodes (T-Modules), 40 A to 110 A 3K /W 40 30 5 K/ Conduc tion Angle W 20 T70HF.. Series TJ= 150°C 10 7 K/ W 0 0 10 20 30 40 50 60 Average Forward Current (A) 70 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 9 - Forward Power Loss Characteristics Document Number: 93587 Revision: 20-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes (T-Modules), 40 A to 110 A 120 = 2 0. W K/ ta el -D 1K /W 1.5 K/ W RMS Limit R 60 SA 80 0. 5K /W 0. 7 K/ W W K/ 100 h Rt DC 180° 120° 90° 60° 30° 3 0. Maximum Average Forward Power Loss (W) Vishay Semiconductors 2K/ W 40 Conduc tion Period 20 T70HF.. Series TJ = 150°C 3K/ W 5K/ W 0 0 20 40 60 80 100 Average Forward Current (A) 120 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 1100 At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial TJ= 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 600 500 400 T70HF.. Series 300 1 10 100 Maximum Allowa ble Case Temperature (°C) Peak Half Sine Wave Forward Current (A) Fig. 10 - Forward Power Loss Characteristics 150 T85HF.. Series R thJC (DC) = 0.62 K/ W 140 130 Conduc tion Angle 120 110 30° 90° 120° 180° 90 80 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1000 900 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 150°C No Voltage Reapplied Rated V RRM Reapplied 800 700 600 500 400 300 200 0.01 T70HF.. Series 0.1 1 Pulse Train Duration (s) Fig. 12 - Maximum Non-Repetitive Surge Current www.vishay.com 6 20 30 40 50 60 70 80 90 Fig. 13 - Current Ratings Characteristics Maximum Allowable Case Temperature (°C) Peak Half Sine Wave Forward Current (A) 1100 10 Average Forward Current (A) Fig. 11 - Maximum Non-Repetitive Surge Current 1200 60° 100 150 T85HF.. Series R thJC (DC) = 0.62 K/ W 140 130 120 Conduction Period 110 100 30° 90 60° 80 90° 120° 70 180° DC 60 0 20 40 60 80 100 120 140 Average Forward Current (A) Fig. 14 - Current Ratings Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93587 Revision: 20-May-10 T40HF..., T70HF..., T85HF..., T110HF... Series 100 Vishay Semiconductors hS Rt A .2 =0 K/ W W K/ W K/ W K/ 1.5 K/ W a RMS Limit e lt -D 60 3 0. 70 1 W K/ 80 7 0. 180° 120° 90° 60° 30° 90 5 0. 2K /W 50 R Maximum Average Forward Power Loss (W) Power Rectifier Diodes (T-Modules), 40 A to 110 A 3K /W 40 30 Conduc tion Angle 20 T85HF.. Series TJ= 150°C 10 5 K/ W 7 K/ W 0 0 10 20 30 40 50 60 70 0 90 80 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Average Forward Current (A) 140 DC 180° 120° 90° 60° 30° W K/ -D ta el 80 2 0. 0.5 K/ W 0.7 K/ W = /W 3K 0. 100 SA th 120 R 1K /W 60 R Maximum Average Forward Power Loss (W) Fig. 15 - Forward Power Loss Characteristics 1.5K /W RMSLimit 2K/ W Conduc tion Period 40 3K/ W T85HF.. Series TJ = 150°C 20 5K/ W 0 0 20 40 60 80 100 120 Average Forward Current (A) 0 140 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 1600 At Any Ra ted Loa d Cond ition And With Ra ted V RRM App lied Following Surge. Initial TJ= 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1400 1200 1000 800 600 T85HF.. Series 400 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 17 - Maximum Non-Repetitive Surge Current Document Number: 93587 Revision: 20-May-10 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 16 - Forward Power Loss Characteristics 1800 1600 1400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 150°C No Voltage Reapplied Rated VRRM Reapplied 1200 1000 800 600 400 0.01 T85HF.. Series 0.1 1 Pulse Train Duration (s) Fig. 18 - Maximum Non-Repetitive Surge Current For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes (T-Modules), 40 A to 110 A T110HF.. Series R thJC (DC) = 0.47 K/ W 140 130 120 Conduc tion Angle 110 100 90 30° 60° 80 90° 120° 70 180° 60 0 20 40 60 80 100 150 Maximum Allowable Case Temperature (°C) 150 120 T110HF.. Series R thJC (DC) = 0.47 K/ W 140 130 120 Conduc tion Period 110 100 30° 90 60° 90° 120° 80 70 180° DC 60 0 20 40 60 80 100 120 140 160 180 Average Forward Current (A) Average Forward Current (A) Fig. 19 - Current Ratings Characteristics Fig. 20 - Current Ratings Characteristics 130 2 0. W K/ 1K /W RMS Limit ta el -D 1. 5 R 80 70 K/ W = 90 W K/ 100 0. 5K /W 0. 7 SA 110 3 0. 180° 120° 90° 60° 30° 120 R th Maximum Average Forward Power Loss (W) Maximum Allowa ble Case Temperature (°C) Vishay Semiconductors K/ W 2K /W 60 50 Conduc tion Angle 40 30 T110HF.. Series TJ= 150°C 20 10 0 0 20 40 60 80 100 Average Forward Current (A) 3 K/ W 5 K/ W 120 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 180 DC 180° 120° 90° 60° 30° 160 140 120 R SA th Maximum Average Forward Pow er Loss (W) Fig. 21 - Forward Power Loss Characteristics = 0. 3K /W 0. 5K /W 0.7 K/ W 100 0. 2 K/ W -D el ta R 1K /W 80 RMSLimit 1.5 60 Conduc tion Period K/ W 2 K/ W 40 3 K/ W T110HF.. Series TJ = 150°C 20 5 K/ W 0 0 20 40 60 80 100 120 140 160 180 0 Average Forward Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 22 - Forward Power Loss Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93587 Revision: 20-May-10 T40HF..., T70HF..., T85HF..., T110HF... Series 1800 1400 1200 1000 800 600 T110HF.. Series 10 TJ= 25°C 10 TJ= 150°C T70HF.. Series 0 100 0.5 1 1.5 2 2.5 3 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 23 - Maximum Non-Repetitive Surge Current Fig. 26 - Forward Voltage Drop Characteristics 2000 10000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 150°C No Voltage Reapplied Rated VRRM Reapplied 1800 1600 1400 1200 1000 800 600 T110HF.. Series 400 0.01 1000 TJ= 25°C 100 TJ= 150°C T85HF.. Series 10 0.1 1 0 1 2 3 4 5 Pulse Train Duration (s) Instantaneous Forward Voltage (V) Fig. 24 - Maximum Non-Repetitive Surge Current Fig. 27 - Forward Voltage Drop Characteristics 1000 10000 Instantaneous Forward Current (A) Instantaneous Forward Current (A) 100 1 400 1 Peak Half Sine Wave Forward Current (A) Instantaneous Forward Current (A) 1600 Vishay Semiconductors 1000 At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial TJ= 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Power Rectifier Diodes (T-Modules), 40 A to 110 A 100 TJ= 25°C TJ= 150°C 10 T40HF.. Series 1000 100 TJ= 25°C TJ= 150°C T110HF.. Series 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Fig. 25 - Forward Voltage Drop Characteristics Document Number: 93587 Revision: 20-May-10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous Forward Voltage (V) Fig. 28 - Forward Voltage Drop Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 9 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes (T-Modules), 40 A to 110 A Transient Thermal Impedanc e ZthJC (K/ W) Vishay Semiconductors 10 1 Steady State Value: RthJC = 1.36 K/ W RthJC = 0.69 K/ W RthJC = 0.62 K/ W RthJC = 0.47 K/ W (DC Operation) T40HF.. Series T70HF.. Series T85HF.. Series T110HF.. Series 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 29 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code T 110 HF 120 1 2 3 4 1 - Module type 2 - Current rating 3 - Circuit configuration (see Circuit Configuration table) 4 - Voltage code x 10 = VRRM CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION Single diode CIRCUIT CONFIGURATION CODE HF CIRCUIT DRAWING + - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 www.vishay.com/doc?95313 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93587 Revision: 20-May-10 Outline Dimensions Vishay Semiconductors D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 25 ± 1 23.5 (0.93) 3 (0.12) 41 (1.61) MAX. 11 (0.43) 18 (0.71) + 27 (1.06) 15 (0.59) 3.9 (0.15) 8 (0.31) - M5 30 (1.18) Document Number: 95313 Revision: 01-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000