NXP 800 mA low VCEsat (BISS) RETs PBRN and PBRP series Low VCEsat (BISS) RETs optimized for automotive and industrial applications Developed specifically for the automotive and industrial markets, these 800 mA resistor-equipped transistors (RETs) combine one or two resistors with a low VCEsat (BISS) transistor to provide an optimal, integrated solution for digital applications. Key features } Built-in bias resistors } High current gain hFE } 800 mA repetitive peak output current } Low collector-emitter saturation voltage VCEsat } ±10% resistor tolerance } Four resistor combinations (more on request) Applications } Digital applications in automotive and industrial segments } Switching loads } Controlling IC inputs } Medium-current peripheral drivers 800 mA RET PBR... series power supply Key benefits } Lower handling and inventory costs } Reduced board space } Shorter assembly times } Reduced pick-and-place efforts } Simpler design process } Increased reliability of end product due to fewer soldering points VCC load R2 R1 from logic control input 100 mA RET PDTC series mse235 brb183 RET combination to build an 800 mA loadswitch RETs to switch loads up to 800 mA www.nxp.com ©2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Date of release: June 2008 The information presented in this document does not form part of any quotation or contract, is believed to be accurate and Document order number: 9397 750 16507 reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Printed in the Netherlands Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 1038 16507 PLP BISS RET v3.indd 1 05-06-2008 11:37:34 800 / 600 mA low VCEsat RETs Package SOT23 Size (mm) 2.9 x 1.3 x 1.0 P tot (mW) 250 Polarity NPN IORM IO VCEO R1 R2 (mA) (mA) (V) (kΩ) (kΩ) PNP 800 600 40 R1 ≠ R2 PBRP113ET R1 = 1, R2 = 1; NPN R1 = 1, R2 = 1; PNP PBRN123ET PBRP123ET R1 = 2.2, R2 = 2.2; NPN R1 = 2.2, R2 = 2.2.; PNP PBRN113ZT PBRP113ZT R1 = 1, R2 = 10; NPN R1 = 1, R2 = 10; PNP PBRN123YT PBRP123YT R1 = 2.2, R2 = 10; NPN R1 = 2.2, R2 = 10; PNP R1 R1 R2 R2 MSE185 R1 = R2 PBRN113ET MSE184 1.0 1.0 PBRN113ET PBRP113ET 2.2 2.2 PBRN123ET PBRP123ET 1.0 10 PBRN113ZT PBRP113ZT 2.2 10 PBRN123YT PBRP123YT bold types are included as samples 500 mA resistor-equipped transistors (RETs) Package Size (mm) SOT23 SOT457 (SC-74) 2.9 x 1.3 x 1.0 2.9 x 1.5 x 1.0 P tot (mW) 250 Polarity NPN 420 PNP Double NPN 6 IC (mA) VCEO R1 (V) R2 (kΩ) R1 R1 R1 5 4 R2 TR2 R2 R2 (kΩ) TR1 R2 MSE185 R1 MSE184 1 2 3 sym063 R1 = R2 500 50 R1 ≠ R2 only R1 1.0 1.0 PDTD113ET PDTB113ET 2.2 2.2 PDTD123ET PDTB123ET 1.0 10 PDTD113ZT PDTB113ZT 2.2 10 PDTD123YT PDTB123YT 2.2 - PDTD123TT PDTB123TT PIMN31 Cross reference list Device NXP replacement Device NXP replacement Device NXP replacement KRC241S PBRN113ET BCR503 PDTD123ET DDTB123EC PDTB123ET KRA221S PBRP113ET BCR505 PDTD123YT DDTB123TC PDTB123TT KRC245S PBRN113ZT PCR521 PDTD113ET DDTB123YC PDTB123YT KRA225S PBRP113ZT BCR523 PDTD113ZT DDTD113EC PDTD113ET KRC242S PBRN123ET BRC553 PDTB123ET DDTD113ZC PDTD113ZT KRA222S PBRP123ET BCR571 PDTB113ET DDTC123EC PDTD123ET KRC246S PBRN123YT BCR573 PDTB113ZT DDTC123TC PDTD123TT KRA226S PBRP123YT DDTB113EC PDTB113ET DDTC123YC PDTD123YT DDTB113ZC PDTB113ZT 1038 16507 PLP BISS RET v3.indd 2 05-06-2008 11:37:37