Low VCEsat (BISS) RETs optimized for automotive and industrial applications

NXP 800 mA low VCEsat
(BISS) RETs
PBRN and PBRP series
Low VCEsat (BISS) RETs optimized for
automotive and industrial applications
Developed specifically for the automotive and industrial markets, these
800 mA resistor-equipped transistors (RETs) combine one or two resistors
with a low VCEsat (BISS) transistor to provide an optimal, integrated solution
for digital applications.
Key features
} Built-in bias resistors
} High current gain hFE
} 800 mA repetitive peak output current
} Low collector-emitter saturation voltage VCEsat
} ±10% resistor tolerance
} Four resistor combinations (more on request)
Applications
} Digital applications in automotive and industrial segments
} Switching loads
} Controlling IC inputs
} Medium-current peripheral drivers
800 mA RET
PBR... series
power supply
Key benefits
} Lower handling and inventory costs
} Reduced board space
} Shorter assembly times
} Reduced pick-and-place efforts
} Simpler design process
} Increased reliability of end product due to fewer
soldering points
VCC
load
R2
R1
from
logic
control input
100 mA RET
PDTC series
mse235
brb183
RET combination to build an
800 mA loadswitch
RETs to switch loads up to 800 mA
www.nxp.com
©2008 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Date of release: June 2008
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and
Document order number: 9397 750 16507
reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Printed in the Netherlands
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
1038 16507 PLP BISS RET v3.indd 1
05-06-2008 11:37:34
800 / 600 mA low VCEsat RETs
Package
SOT23
Size (mm)
2.9 x 1.3 x 1.0
P tot (mW)
250
Polarity
NPN
IORM
IO
VCEO
R1
R2
(mA)
(mA)
(V)
(kΩ)
(kΩ)
PNP
800
600
40
R1 ≠ R2
PBRP113ET
R1 = 1, R2 = 1; NPN
R1 = 1, R2 = 1; PNP
PBRN123ET
PBRP123ET
R1 = 2.2, R2 = 2.2; NPN
R1 = 2.2, R2 = 2.2.; PNP
PBRN113ZT
PBRP113ZT
R1 = 1, R2 = 10; NPN
R1 = 1, R2 = 10; PNP
PBRN123YT
PBRP123YT
R1 = 2.2, R2 = 10; NPN
R1 = 2.2, R2 = 10; PNP
R1
R1
R2
R2
MSE185
R1 = R2
PBRN113ET
MSE184
1.0
1.0
PBRN113ET
PBRP113ET
2.2
2.2
PBRN123ET
PBRP123ET
1.0
10
PBRN113ZT
PBRP113ZT
2.2
10
PBRN123YT
PBRP123YT
bold types are included as samples
500 mA resistor-equipped transistors (RETs)
Package
Size (mm)
SOT23
SOT457 (SC-74)
2.9 x 1.3 x 1.0
2.9 x 1.5 x 1.0
P tot (mW)
250
Polarity
NPN
420
PNP
Double NPN
6
IC
(mA)
VCEO
R1
(V)
R2
(kΩ)
R1
R1
R1
5
4
R2
TR2
R2
R2
(kΩ)
TR1
R2
MSE185
R1
MSE184
1
2
3
sym063
R1 = R2
500
50
R1 ≠ R2
only R1
1.0
1.0
PDTD113ET
PDTB113ET
2.2
2.2
PDTD123ET
PDTB123ET
1.0
10
PDTD113ZT
PDTB113ZT
2.2
10
PDTD123YT
PDTB123YT
2.2
-
PDTD123TT
PDTB123TT
PIMN31
Cross reference list
Device
NXP replacement
Device
NXP replacement
Device
NXP replacement
KRC241S
PBRN113ET
BCR503
PDTD123ET
DDTB123EC
PDTB123ET
KRA221S
PBRP113ET
BCR505
PDTD123YT
DDTB123TC
PDTB123TT
KRC245S
PBRN113ZT
PCR521
PDTD113ET
DDTB123YC
PDTB123YT
KRA225S
PBRP113ZT
BCR523
PDTD113ZT
DDTD113EC
PDTD113ET
KRC242S
PBRN123ET
BRC553
PDTB123ET
DDTD113ZC
PDTD113ZT
KRA222S
PBRP123ET
BCR571
PDTB113ET
DDTC123EC
PDTD123ET
KRC246S
PBRN123YT
BCR573
PDTB113ZT
DDTC123TC
PDTD123TT
KRA226S
PBRP123YT
DDTB113EC
PDTB113ET
DDTC123YC
PDTD123YT
DDTB113ZC
PDTB113ZT
1038 16507 PLP BISS RET v3.indd 2
05-06-2008 11:37:37