SQ2398ES www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 100 RDS(on) () at VGS = 10 V • AEC-Q101 qualified c 0.300 ID (A) • 100 % Rg and UIS tested 1.67 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package SOT-23 SOT-23 (TO-236) D D 3 G 2 S 1 G Top View S N-Channel MOSFET Marking Code: 9E ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 1.6 0.9 IS 2.5 IDM 6.6 IAS 5 EAS 1.2 PD UNIT 2 0.6 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 130 RthJF 75 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic ID(on) RDS(on) gfs VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150 VGS = 10 V VDS 5 V 5 - - VGS = 10 V ID = 1.5 A - 0.240 0.300 VGS = 10 V ID = 1.5 A, TJ = 125 °C - - 0.552 VGS = 10 V ID = 1.5 A, TJ = 175 °C - - 0.720 - 3 - - 152 - VDS = 15 V, ID = 1.5 A V nA μA A S b Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 28 - Reverse Transfer Capacitance Crss - 12 - Total Gate Charge c Qg - 2.3 3.4 - 0.7 - - 1.1 - 2.9 5.8 8.7 - 5 6.9 - 18 24 - 7 9 - 17 23 - - 8 A - 0.8 1.2 V Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Qgs Fall Time c VDS = 50 V, ID = 1.5 A Qgd Rg f = 1 MHz td(on) tr Time c VGS = 10 V VDS = 50 V, f = 1 MHz td(off) VDD = 50 V, RL = 33 ID 1.5 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics pF nC ns b Pulsed Current a ISM Forward Voltage VSD IF = 1.5 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 6 VGS = 10 V thru 7 V 5 VGS = 6 V ID - Drain Current (A) ID - Drain Current (A) 5 4 3 VGS = 5 V 2 4 3 TC = 25 °C 2 TC = 125 °C 1 1 TC = -55 °C VGS = 4 V, 3 V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics 10 Transfer Characteristics 140 1.0 120 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.8 0.6 VGS = 6 V 0.4 100 80 Ciss 60 Coss 40 0.2 20 VGS = 10 V Crss 0 0.0 0 1 2 3 4 ID - Drain Current (A) 5 0 6 20 40 60 80 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.5 RDS(on) - On-Resistance (Normalized) ID = 1.5 A VDS = 50 V VGS - Gate-to-Source Voltage (V) 100 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 ID = 1.5 A 2.1 VGS =10 V 1.7 1.3 VGS = 4.5 V 0.9 0.5 -50 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S15-1777-Rev. A, 30-Jul-15 -25 150 175 Document Number: 67117 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix 1.0 0.5 0.8 0.1 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 TJ = 150 °C 0.4 ID = 5 mA -0.3 ID = 250 μA -0.7 -1.1 0.2 TJ = 25 °C -1.5 0.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) -50 10 -25 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Threshold Voltage 130 10 VDS - Drain-to-Source Voltage (V) 100 IS - Source Current (A) 0 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.001 ID = 1 mA 125 120 115 110 105 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage S15-1777-Rev. A, 30-Jul-15 1.2 -50 -25 Drain Source Breakdown vs. Junction Temperature Document Number: 67117 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 100 μs 1 1 ms 10 ms 0.1 100 ms TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 1 s, 10 s DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 0.02 3. TJM - TF = PDMZthJF (t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67117. S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Work-In-Progress Ordering Information www.vishay.com Vishay Siliconix SOT-23 Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQ2301ES SQ2301ES-T1-GE3 SQ2301ES-T1_GE3 SQ2303ES SQ2303ES-T1-GE3 SQ2303ES-T1_GE3 SQ2308CES SQ2308CES-T1-GE3 SQ2308CES-T1_GE3 SQ2309ES SQ2309ES-T1-GE3 SQ2309ES-T1_GE3 SQ2310ES SQ2310ES-T1-GE3 SQ2310ES-T1_GE3 SQ2315ES SQ2315ES-T1-GE3 SQ2315ES-T1_GE3 SQ2318AES SQ2318AES-T1-GE3 SQ2318AES-T1_GE3 SQ2319ADS - SQ2319ADS-T1_GE3 SQ2325ES SQ2325ES-T1-GE3 SQ2325ES-T1_GE3 SQ2337ES SQ2337ES-T1-GE3 SQ2337ES-T1_GE3 SQ2348ES SQ2348ES-T1-GE3 SQ2348ES-T1_GE3 SQ2351ES SQ2351ES-T1-GE3 SQ2351ES-T1_GE3 SQ2361AEES SQ2361AEES-T1-GE3 SQ2361AEES-T1_GE3 SQ2361ES - SQ2361ES-T1_GE3 SQ2362ES - SQ2362ES-T1_GE3 SQ2389ES - SQ2389ES-T1_GE3 SQ2398ES - SQ2398ES-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 06-Jun-16 Document Number: 65844 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. ambient air. This pattern uses all the available area underneath the body for this purpose. 0.114 2.9 0.081 2.05 0.150 3.8 0.059 1.5 0.0394 1.0 0.037 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Figure 1 shows the footprint with copper spreading for the SOT-23 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the Document Number: 70739 26-Nov-03 Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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