SQ2398ES Datasheet

SQ2398ES
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Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
100
RDS(on) () at VGS = 10 V
• AEC-Q101 qualified c
0.300
ID (A)
• 100 % Rg and UIS tested
1.67
Configuration
• Material categorization: 
for definitions of compliance please see
www.vishay.com/doc?99912
Single
Package
SOT-23
SOT-23 (TO-236)
D
D
3
G
2
S
1
G
Top View
S
N-Channel MOSFET
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Marking Code: 9E
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
1.6
0.9
IS
2.5
IDM
6.6
IAS
5
EAS
1.2
PD
UNIT
2
0.6
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
130
RthJF
75
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount b
°C/W
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
S15-1777-Rev. A, 30-Jul-15
Document Number: 67117
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2398ES
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
100
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
Zero Gate Voltage Drain Current
IDSS
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = 100 V
-
-
1
VGS = 0 V
VDS = 100 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 100 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS  5 V
5
-
-
VGS = 10 V
ID = 1.5 A
-
0.240
0.300
VGS = 10 V
ID = 1.5 A, TJ = 125 °C
-
-
0.552
VGS = 10 V
ID = 1.5 A, TJ = 175 °C
-
-
0.720
-
3
-
-
152
-
VDS = 15 V, ID = 1.5 A
V
nA
μA
A

S
b
Input Capacitance
Ciss
VGS = 0 V
Output Capacitance
Coss
-
28
-
Reverse Transfer Capacitance
Crss
-
12
-
Total Gate Charge c
Qg
-
2.3
3.4
-
0.7
-
-
1.1
-
2.9
5.8
8.7
-
5
6.9
-
18
24
-
7
9
-
17
23
-
-
8
A
-
0.8
1.2
V
Gate-Source
Charge c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay
Qgs
Fall Time c
VDS = 50 V, ID = 1.5 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Time c
VGS = 10 V
VDS = 50 V, f = 1 MHz
td(off)
VDD = 50 V, RL = 33 
ID  1.5 A, VGEN = 10 V, Rg = 1 
tf
Source-Drain Diode Ratings and Characteristics
pF
nC

ns
b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 1.5 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1777-Rev. A, 30-Jul-15
Document Number: 67117
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2398ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
6
VGS = 10 V thru 7 V
5
VGS = 6 V
ID - Drain Current (A)
ID - Drain Current (A)
5
4
3
VGS = 5 V
2
4
3
TC = 25 °C
2
TC = 125 °C
1
1
TC = -55 °C
VGS = 4 V, 3 V
0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
5
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
10
Transfer Characteristics
140
1.0
120
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.8
0.6
VGS = 6 V
0.4
100
80
Ciss
60
Coss
40
0.2
20
VGS = 10 V
Crss
0
0.0
0
1
2
3
4
ID - Drain Current (A)
5
0
6
20
40
60
80
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
2.5
RDS(on) - On-Resistance (Normalized)
ID = 1.5 A
VDS = 50 V
VGS - Gate-to-Source Voltage (V)
100
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
ID = 1.5 A
2.1
VGS =10 V
1.7
1.3
VGS = 4.5 V
0.9
0.5
-50
Qg - Total Gate Charge (nC)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1777-Rev. A, 30-Jul-15
-25
150
175
Document Number: 67117
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2398ES
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Vishay Siliconix
1.0
0.5
0.8
0.1
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.6
TJ = 150 °C
0.4
ID = 5 mA
-0.3
ID = 250 μA
-0.7
-1.1
0.2
TJ = 25 °C
-1.5
0.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
-50
10
-25
On-Resistance vs. Gate-to-Source Voltage
25
50
75 100
TJ - Temperature (°C)
125
150
175
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Threshold Voltage
130
10
VDS - Drain-to-Source Voltage (V)
100
IS - Source Current (A)
0
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.001
ID = 1 mA
125
120
115
110
105
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
S15-1777-Rev. A, 30-Jul-15
1.2
-50
-25
Drain Source Breakdown vs. Junction Temperature
Document Number: 67117
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2398ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
100 μs
1
1 ms
10 ms
0.1
100 ms
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
1 s, 10 s
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
0.02
3. TJM - TF = PDMZthJF (t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1777-Rev. A, 30-Jul-15
Document Number: 67117
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2398ES
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67117.
S15-1777-Rev. A, 30-Jul-15
Document Number: 67117
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
Ordering Information
www.vishay.com
Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQ2301ES
SQ2301ES-T1-GE3
SQ2301ES-T1_GE3
SQ2303ES
SQ2303ES-T1-GE3
SQ2303ES-T1_GE3
SQ2308CES
SQ2308CES-T1-GE3
SQ2308CES-T1_GE3
SQ2309ES
SQ2309ES-T1-GE3
SQ2309ES-T1_GE3
SQ2310ES
SQ2310ES-T1-GE3
SQ2310ES-T1_GE3
SQ2315ES
SQ2315ES-T1-GE3
SQ2315ES-T1_GE3
SQ2318AES
SQ2318AES-T1-GE3
SQ2318AES-T1_GE3
SQ2319ADS
-
SQ2319ADS-T1_GE3
SQ2325ES
SQ2325ES-T1-GE3
SQ2325ES-T1_GE3
SQ2337ES
SQ2337ES-T1-GE3
SQ2337ES-T1_GE3
SQ2348ES
SQ2348ES-T1-GE3
SQ2348ES-T1_GE3
SQ2351ES
SQ2351ES-T1-GE3
SQ2351ES-T1_GE3
SQ2361AEES
SQ2361AEES-T1-GE3
SQ2361AEES-T1_GE3
SQ2361ES
-
SQ2361ES-T1_GE3
SQ2362ES
-
SQ2362ES-T1_GE3
SQ2389ES
-
SQ2389ES-T1_GE3
SQ2398ES
-
SQ2398ES-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 06-Jun-16
Document Number: 65844
1
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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1
AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
Document Number: 70739
26-Nov-03
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000