Si3421DV Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () Max. ID (A)d,e 0.0192 at VGS = -10 V -8 0.0232 at VGS = -6 V -8 0.0270 at VGS = -4.5 V -8 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 21 nC Available TSOP-6 Top View APPLICATIONS D 1 6 D 3 mm D 2 5 D • • • • Load Switches Adaptor Switch DC/DC Converter For Mobile Computing/Consumer S G 3 S 4 BI XX YY G Marking Code Lot Traceability and Date Code 2.85 mm D Part # Code Ordering Information: Si3421DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit -30 ± 20 -8e -8.3a, b -6.7a, b -50 -3.5 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD -1.7a, b -15 11.25 4.2 2.7 2a, b 1.3a, b -55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V -8e IDM Pulsed Drain Current (t = 100 µs) Unit A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t 10 s Steady State Symbol RthJA RthJF Typical 40 25 Maximum 62.5 30 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C. e. Package limited. Document Number: 62921 S13-2289-Rev. A, 04-Nov-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3421DV Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = -250 µA -30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ ID = -250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Dynamicb RDS(on) gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg tr Rise Time td(off) Turn-Off DelayTime Fall Time Turn-On Delay Time V nA VDS = -30 V, VGS = 0 V -1 -5 VDS -10 V, VGS = -10 V VGS = -10 V, ID = -7 A -30 µA A 0.0160 0.0192 VGS = -6 V, ID = -5 A 0.0193 0.0232 VGS = -4.5 V, ID = -3 A 0.0225 0.0270 VDS = -10 V, ID = -7 A 30 S 2580 VDS = -15 V, VGS = 0 V, f = 1 MHz 256 pF 225 VDS = -15 V, VGS = -10 V, ID = -8.3 A VDS = -15 V, VGS = -4.5 V, ID = -8.3 A 46 69 21 32 7 nC 6.1 f = 1 MHz VDD = -15 V, RL = 2.24 ID -6.7 A, VGEN = -10 V, Rg = 1 1.6 8 16 7 14 9 18 83 13 20 td(on) 58 87 40 60 VDD = -15 V, RL = 2.24 ID -6.7 A, VGEN = -4.5 V, Rg = 1 tf Fall Time -3 ± 100 tf td(off) Turn-Off DelayTime -1 55 tr Rise Time mV/°C 4.6 VDS = -30 V, VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time V -18 36 54 17 26 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 µs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -3.5 -50 IS = -6.7 A, VGS = 0 V IF = -6.7 A, dI/dt = 100 A/µs, TJ = 25 °C A -0.85 -1.2 V 21.5 33 ns 12 20 nC 10.5 11 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62921 S13-2289-Rev. A, 04-Nov-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3421DV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 50 VGS = 10 V thru 5 V VGS = 4.5 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 VGS = 4 V 30 20 10 0 0.5 1 1.5 TC = 25 °C 4 TC = 125 °C 2 VGS = 3 V 0 6 TC = - 55 0 2 0 0.7 VDS - Drain-to-Source Voltage (V) 1.4 2.8 3.5 Transfer Characteristics 0.038 3375 0.032 2700 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 0.026 2.1 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V VGS = 6 V 0.02 VGS = 10 V 0.014 Ciss 2025 1350 675 Coss Crss 0.008 0 0 10 20 30 40 50 0 6 12 ID - Drain Current (A) On-Resistance vs. Drain Current 24 30 Capacitance 1.5 10 VDS = 8 V VGS , ID= 10 V/7 A; 6 V/5 A; 4.5 V/3 A RDS(on) - On-Resistance (Normalized) ID = 8.3 A VGS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 8 6 VDS = 15 V VDS = 24 V 4 2 0 1.3 1.1 0.9 0.7 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62921 S13-2289-Rev. A, 04-Nov-13 40 50 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3421DV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.060 100 ID = 7 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.050 10 TJ = 150 °C TJ = 25 °C 1 0.040 0.030 TJ = 125 °C 0.020 TJ = 25 °C 0.010 0.1 0.000 0.0 0.3 0.6 0.9 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 2.25 ID = 250 μA 40 Power (W) VGS(th) (V) 2 1.75 30 20 1.5 10 1.25 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by IDM Limited by RDS(on)* 100 μs ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 10 s, 1 s DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 62921 S13-2289-Rev. A, 04-Nov-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3421DV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 14 ID - Drain Current (A) 10.5 7 3.5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1.4 5 4 Power (W) Power (W) 1.1 3 0.7 2 0.4 1 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62921 S13-2289-Rev. A, 04-Nov-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3421DV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62921. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62921 S13-2289-Rev. A, 04-Nov-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec-06 INCHES 7 Nom www.vishay.com 1 AN823 Vishay Siliconix Mounting LITTLE FOOTR TSOP-6 Power MOSFETs Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages. The basis of the pad design for surface mounted power MOSFET is the basic footprint for the package. For the TSOP-6 package outline drawing see http://www.vishay.com/doc?71200 and see http://www.vishay.com/doc?72610 for the minimum pad footprint. In converting the footprint to the pad set for a power MOSFET, you must remember that not only do you want to make electrical connection to the package, but you must made thermal connection and provide a means to draw heat from the package, and move it away from the package. In the case of the TSOP-6 package, the electrical connections are very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and are connected together. For a small signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. Since surface mounted packages are small, and reflow soldering is the most common form of soldering for surface mount components, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. REFLOW SOLDERING Vishay Siliconix surface-mount packages meet solder reflow reliability requirements. Devices are subjected to solder reflow as a test preconditioning and are then reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow temperature profile used, and the temperatures and time duration, are shown in Figures 2 and 3. Figure 1 shows the copper spreading recommended footprint for the TSOP-6 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlays the basic pattern on pins 1,2,5, and 6. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. Notice that the planar copper is shaped like a “T” to move heat away from the drain leads in all directions. This pattern uses all the available area underneath the body for this purpose. 0.167 4.25 0.074 1.875 0.014 0.35 0.122 3.1 0.026 0.65 0.049 1.25 0.049 1.25 0.010 0.25 FIGURE 1. Recommended Copper Spreading Footprint Document Number: 71743 27-Feb-04 Ramp-Up Rate +6_C/Second Maximum Temperature @ 155 " 15_C 120 Seconds Maximum Temperature Above 180_C 70 − 180 Seconds Maximum Temperature 240 +5/−0_C Time at Maximum Temperature 20 − 40 Seconds Ramp-Down Rate +6_C/Second Maximum FIGURE 2. Solder Reflow Temperature Profile www.vishay.com 1 AN823 Vishay Siliconix 10 s (max) 255 − 260_C 1X4_C/s (max) 3-6_C/s (max) 217_C 140 − 170_C 60 s (max) 60-120 s (min) Pre-Heating Zone 3_C/s (max) Reflow Zone Maximum peak temperature at 240_C is allowed. FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE TABLE 1. Equivalent Steady State Performance—TSOP-6 Thermal Resistance Rqjf 30_C/W On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 6.1 A 1.4 rDS(on) − On-Resiistance (Normalized) A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, Rqjc, or the junction-to-foot thermal resistance, Rqjf. This parameter is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device only, in other words, independent of the properties of the object to which the device is mounted. Table 1 shows the thermal performance of the TSOP-6. 1.2 1.0 0.8 0.6 −50 SYSTEM AND ELECTRICAL IMPACT OF TSOP-6 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) FIGURE 4. Si3434DV In any design, one must take into account the change in MOSFET rDS(on) with temperature (Figure 4). www.vishay.com 2 Document Number: 71743 27-Feb-04 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 26 Document Number: 72610 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000