ESD24VS2U Data Sheet (619 KB, EN)

ESD24VS2U
Silicon TVS diodes
• ESD / transient protection of CAN/LIN
bus networks power supply lines according to:
IEC61000-4-2 (ESD): ±30kV (air / contact)
IEC61000-4-4 (EFT): 80 A (5/50 ns)
IEC61000-4-5 (surge): 5 A (8/20µs)
ISO7637-2: Pulse 1 (max. 50 V),
Pulse 2 (max. 125 V), Pulse 3a, b (max.800 V)
• Max. working voltage: 24 V
• Low capacitance: 24 pF typ.
• Low clamping voltage: < 41 V
• Extremely low reverse current: < 1 nA typ.
• Pb-free (RoHS compliant) package
Applications
• Low and High-Speed CAN
• Fault Tolerant CAN
• Industrial control networks
• 12/24 V DC power supply lines
ESD24VS2U
!
, ,
Type
Package
Configuration
Marking
ESD24VS2U
SOT23
2 lines, uni-directional*
EUs
* 1 line, bi-directional between pins 1 and 2, if pin 3 is not connested
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ESD24VS2U
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
ESD contact discharge1)
VESD
30
kV
Peak pulse current (tp = 8 / 20 µs)2)
Ipp
5
A
Peak pulse power (tp = 8 / 20 µs)2)
Ppk
230
W
Operating temperature range
Top
-55...150
°C
Storage temperature
Tstg
-65...150
Value
Unit
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Reverse working voltage
VRWM
-
-
24
Breakdown voltage
V(BR)
26
-
32
-
<1
10
V
I(BR) = 1 mA
Reverse current
IR
nA
VR = 24 V
Clamping voltage
V
VCL
IPP = 1 A, tp = 8 / 20 µs) 2)
-
30
34
IPP = 5 A, tp = 8 / 20 µs) 2)
-
36
41
Line capacitance3)
pF
CT
VR = 0 V, f = 1 MHz, (pins 1 to 2, pin 3 n.c.)
-
24
28
VR = 0 V, f = 1 MHz, (pins 1 or 2 to 3)
-
48
52
1V
ESD according to IEC61000-4-2. Device stressed with 10 positive / negative ESD pulses.
2I
pp according to IEC61000-4-5. Non-repetitive current pulse.
3Total
capacitance line to ground (per linie)
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ESD24VS2U
Power derating curve Ppk = ƒ (T A)
Clamping voltage, Vcl = ƒ(Ipp )
tp = 8 / 20 µs
6
110
A
5
4.5
80
pins 1/2 to 3 (uni-directional)
pins 1 to 2 (bi-directional)
4
70
Ipp
Ppk or Ipp
90
3.5
60
3
50
2.5
40
2
30
1.5
20
1
10
0.5
0
0
25
50
75
100
°C
0
2
150
6
10
14
18
22
26
30
34 V
TA
Reverse current IR = ƒ(VR )
Breakdown voltage VBR = ƒ(IR )
TA = Parameter, pins 1 / 2 to 3
TA = Parameter, pins 1 to 2
( uni-directional )
( bi-directional )
10
40
Vcl
-8
1
A
150°C
mA
10 -9
- 40°C
25°C
125°C
150°C
IR
IR
125°C
10 -10
0
85°C
10 -11
-0.5
25°C
10 -12
0
4
8
12
16
V
-1
-35
24
VR
-25
-15
-5
5
15
V
35
VBR
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ESD24VS2U
Line capacitance CT = ƒ (VR )
f = 1MHz
50
pF
CT
40
35
pins 1/2 to 3 (uni-directional)
30
25
20
pins 1 to 2 (bi-directional)
15
10
0
4
8
12
16
V
24
VR
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ESD24VS2U
Connector
Application example ESD24VS2U ( uni-directional )
12V / 24V DC power supply line protection
2
ESD
sensitive
circuit
1
3
The protection diode should be placed very
close to the location where the ESD or other
transients can occur to keep loops and
inductances as small as possible. Pin 3
should be connected directly to a ground
plane on the board.
Application example ESD24VS2U ( bi-directional )
Single Wire CAN and LIN bus protection
CAN Bus
CAN line
I/O
CAN
transceiver
1
3
2
5
Pin 2 (or pin 1) should be
connected directly to a ground
plane on the board. Pin 3 is
not connected.
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ESD24VS2U
Clamping voltage according to ISO 7637-2: Pulse 1
Ri = 10 Ohm, td = 2 ms, 5000 pulses
Open circuit voltage: -50 V
With connected diode: -34.8 V
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Clamping voltage according to ISO 7637-2: Pulse 2a
Ri = 10 Ohm, td = 2 us, 4000 pulses, 60 min
With connected diode: 36.0 V
Open circuit voltage: 125 V
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Clamping voltage according to ISO 7637-2: Pulse 3
Ri = 50 Ohm, td = 100 ns, 10 min
Open circuit voltage: 800 V
With connected diode: 40.0 V
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Package SOT23
ESD24VS2U
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
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ESD24VS2U
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
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