ESD5V3S1B-02LRH Silicon TVS Diode • ESD / transient protection of data and power lines in low voltage applications according to: IEC61000-4-2 (ESD): ± 25 kV (air) 20 kV (contact) IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns) IEC61000-4-5 (surge): 5.5 A / 80 W (8/20 µs) • Small form factor (0402 inch): 1.0 x 0.6 x 0.4 mm3 • Bi-directional, symmetrical working voltage up to ± 5.3 V • Ultralow and symmetric clamping voltage • Ultralow dynamic resistance 0.4 Ω • Very fast response time • Pb-free (RoHS compliant) package Applications Recommended to protect audio lines / microphone lines / speaker and headset systems in: • Mobile phones • Mobile TV • Set top boxes • MP3 players • Minidisc players • Portable entertainment electronics ESD5V3S1B-02LRH 1 2 Type Package Configuration Marking ESD5V3S1B-02LRH TSLP-2-17 1 line, bi-directional E1 1 2011-06-15 ESD5V3S1B-02LRH Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit ESD air / contact discharge1) VESD 25 / 20 kV Peak pulse current (tp = 8 / 20 µs)2) Ipp 5.5 A Peak pulse power (tp = 8 / 20 µs 2) Ppk 80 W Operating temperature range Top -55...125 °C Storage temperature Tstg -65...150 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Reverse working voltage VRWM -5.3 - 5.3 Breakdown voltage V(BR) 6 - - IR - - 0.1 V I(BR) = 1 mA Reverse current µA VR = 3.3 V Clamping voltage V VCL IPP = 1 A, tp = 8/20 µs2) - 8 10 IPP = 3.5 A, tp = 8/20 µs2) IPP = 5.5 A, tp = 8/20 µs2) - 10 12 - 11 13 Diode capacitance pF CT VR = 0 V, f = 1 MHz - 17.5 20 VR = 2.5 V, f = 1 MHz - 14.5 - - 0.4 - Dynamic resistance3) (tp = 30 ns) RD Ω 1V ESD according to IEC61000-4-2 2I pp according to IEC61000-4-5 3 according to TLP tests 2 2011-06-15 ESD5V3S1B-02LRH Power derating curve Ppk = ƒ (T A) Clamping voltage, Vcl = ƒ(Ipp ) tp = 8 / 20 µs 14 110 % V 12 80 70 Vcl Ppk or Ipp 90 11 60 10 50 9 40 30 8 20 7 10 0 0 25 50 75 100 °C 6 0 150 1 2 3 A 4 TA 6 I pp Reverse current IR = ƒ (TA) Breakdown voltage VBR = ƒ(TA ) VR = 3.3 V IR = 1 mA 10 -6 8 V A 7.5 IR V BR 10 -7 7.25 7 6.75 10 -8 6.5 6.25 10 -9 -75 -50 -25 0 25 50 75 100 °C 6 -75 150 TA -50 -25 0 25 50 75 100 °C 150 TA 3 2011-06-15 ESD5V3S1B-02LRH Diode capacitance CT = ƒ (VR) f = 1MHz 20 pF 16 CT 14 12 10 8 6 4 2 0 0 1 2 3 4 V 6 VR 4 2011-06-15 ESD5V3S1B-02LRH Connector Application example single channel, bi-directional Protected signal line I/O ESD sensitive device 2 1 The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. Pin 1 (or pin 2) should be connected directly to a ground plane on the board. 5 2011-06-15 TSLP-2-17 (mm) ESD5V3S1B-02LRH Package Outline Top view Bottom view 0.39 +0.01 -0.03 0.6 ±0.05 0.05 MAX. 1 1 0.25 ±0.035 1) 2 1±0.05 0.65 ±0.05 2 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminal Foot Print 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.35 0.6 0.275 For board assembly information please refer to Infineon website "Packages" Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 mm = 50.000 Pieces/Reel (optional) 0.5 Cathode marking 8 1.16 4 0.76 6 2011-06-15 ESD5V3S1B-02LRH Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-06-15