SiHW47N60E Datasheet

SiHW47N60E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
•
•
•
•
•
•
650
RDS(on) max. at 25 °C ()
VGS = 10 V
Qg max. (nC)
0.064
220
Qgs (nC)
29
Qgd (nC)
57
Configuration
Single
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
TO-247AD
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
D
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AD
Lead (Pb)-free and Halogen-free
SiHW47N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
VDS = 0 V to 80 % VDS
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
for 10 s
UNIT
V
47
30
A
145
3
W/°C
EAS
1800
mJ
PD
357
W
TJ, Tstg
-55 to +150
°C
dV/dt
70
11
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S16-0233-Rev. H, 15-Feb-16
Document Number: 91517
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW47N60E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
0.33
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 250 μA
-
0.66
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
VGS = ± 20 V
-
-
± 100
nA
μA
IGSS
IDSS
VGS = ± 30 V
-
-
±1
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
10
μA
-
0.053
0.064

gfs
VDS = 8 V, ID = 3 A
-
6.8
-
S
Input Capacitance
Ciss
4810
9620
Coss
115
230
460
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
2405
Output Capacitance
1.7
5
10
Effective Output Capacitance, Energy
Related a
Co(er)
-
170
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
604
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 24 A
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
74
148
220
14.5
29
58
Qgd
28.5
57
86
td(on)
14
28
56
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 24 A, VDS = 480 V
VDD = 480 V, ID = 24 A,
VGS = 10 V, Rg = 4.4 
36
72
108
47
93
140
41
82
123
f = 1 MHz, open drain
0.13
0.65
1.3
-
-
47
-
-
140
nC
ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 24 A, VGS = 0 V
TJ = 25 °C, IF = IS = 24 A,
dI/dt = 100 A/μs, VR = 25 V
S
-
-
1.2
V
-
582
1164
ns
-
11
22
μC
-
31
62
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S16-0233-Rev. H, 15-Feb-16
Document Number: 91517
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW47N60E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
180
3.0
RDS(on), Drain-to-Source On-Resistance
(Normalized)
I D , Drain-to-Source Current (A)
160
140
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
Bottom 5.0 V
120
100
80
60
40
20
5.0 V
TJ = 25 °C
0
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
25
I D = 24 A
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20
30
V GS = 10 V
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
100 000
Top 15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
Bottom 5.0 V
100
80
60
10 000
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
120
40
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
10
20
TJ = 150 °C
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
1
30
0
100
200
300
400
V DS, Drain-to-Source Voltage (V)
500
600
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics, TC = 150 °C
180
35
5000
30
140
100
80
TJ= 150 °C
60
20
Eoss
Coss
500
15
Eoss (μJ)
25
120
Coss (pF)
ID, Drain-to-Source Current (A)
160
10
40
5
20
T J= 25 °C
0
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
25
50
0
0
100
200
300
400
500
600
VDS
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Coss and Eoss vs. VDS
S16-0233-Rev. H, 15-Feb-16
Document Number: 91517
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW47N60E
www.vishay.com
Vishay Siliconix
50
24
V DS = 480 V
V DS = 300 V
V DS = 120 V
40
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
20
45
16
12
8
35
30
25
20
15
10
4
5
0
0
0
50
100
150
200
250
Qg, Total Gate Charge (nC)
25
300
75
100
125
150
TC, Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
725
VDS, Drain-to-Source Breakdown Voltage (V)
1000
ISD, Reverse Drain Current (A)
50
100
TJ = 150 °C
TJ = 25 °C
10
1
V GS = 0 V
0.1
0.2
0.4
0.6
0.8
1
1.2
VSD, Source-Drain Voltage (V)
1.4
Fig. 8 - Typical Source-Drain Diode Forward Voltage
700
675
650
625
600
575
550
- 60 - 40 - 20
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
1000
Operation in this area limited
by RDS(on)*
IDM Limited
ID, Drain Current (A)
100
10
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10 ms
BVDSS Limited
10
100
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
1000
Fig. 9 - Maximum Safe Operating Area
S16-0233-Rev. H, 15-Feb-16
Document Number: 91517
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW47N60E
www.vishay.com
Vishay Siliconix
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
VGS
VDS
RD
VDS
tp
VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 16 - Unclamped Inductive Waveforms
Fig. 13 - Switching Time Test Circuit
VDS
QG
10 V
90 %
QGS
VG
10 %
VGS
td(on)
td(off) tf
tr
Charge
Fig. 17 - Basic Gate Charge Waveform
Fig. 14 - Switching Time Waveforms
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
QGD
VDS
50 kΩ
12 V
D.U.T
RG
10 V
tp
0.3 µF
+
-
IAS
0.01 Ω
0.2 µF
+
V DD
D.U.T.
-
VDS
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S16-0233-Rev. H, 15-Feb-16
Document Number: 91517
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW47N60E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel










Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91517.
S16-0233-Rev. H, 15-Feb-16
Document Number: 91517
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-247AD (HIGH VOLTAGE)
DIM.
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
A
4.90
5.10
0.193
0.200
A1
2.30
2.40
0.090
0.094
A2
1.92
2.08
0.076
0.082
b
1.15
1.25
0.045
0.049
b2
1.95
2.05
0.077
0.081
b4
2.85
3.11
0.112
0.122
c
0.6 BSC
MAX.
0.024 BSC
D
20.80
21.46
0.819
0.845
D1
4.37
4.63
0.172
0.182
e
5.32
5.58
0.209
0.220
E
15.77
16.03
0.621
0.631
L
19.85
20.11
0.781
0.792
L1
4.07
4.33
0.160
0.170
Øp
3.56
3.66
0.140
0.144
ECN: X12-0191-Rev. A, 22-Oct-12
DWG: 6010
Revision: 22-Oct-12
Document Number: 91528
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000