si-8050y ds en

1-1-3 DC/DC Converter ICs
SI-8000Y Series Current
Full-Mold, Mode
SeparateControl
ExcitationStep-down
Step-down Switching
Switching
ModeMode
Regulator ICs
■Features
■Absolute Maximum Ratings
• Compact (equivalent to TO220) full-mold
package
Parameter
Input Voltage
• Output current: 8.0 A
Power Dissipation
• High efficiency: 86%
• Built-in reference oscillator (130 kHz)
• Built-in drooping-type-overcurrent protection
and thermal protection circuits
Symbol
Ratings
VIN
45
Unit
V
PD1
20.8(With infinite heatsink)
W
PD2
1.8(Without heatsink, stand-alone operation)
W
Junction Temperature
Tj
–30 to +150
°C
Storage Temperature
Tstg
–40 to +150
°C
Thermal Resistance (Junction to Case)
θj-c
6
°C/W
Thermal Resistance (Junction to Ambient Air)
θj-a
66.7
°C/W
• Built-in soft start circuit (Output ON/OFF
available)
• Low current consumption during off
■Applications
•
•
•
•
AV equipment
OA equipment
Gaming equipment
Onboard local power supplies
■Recommended Operating Conditions
Raings
Symbol
Parameter
SI-8010Y
SI-8050Y
Unit
Input Voltage Range
VIN
8 or VO+3* to 43
8 to 43
V
Output Voltage Range
Vo
1 to 15
5
V
Output Current Range
Io
0 to 8.0
A
Operating Junction Temperature Range
Tjop
–30 to +135
°C
Operating Temperature Range
Top
–30 to +85
°C
*: The minimum value of the input voltage range is 8 V or Vo + 3V, whichever is higher.
■Electrical Characteristics
Ratings
Parameter
Symbol
SI-8010Y*
mIN.
Output Voltage
(Reference voltage for SI-8010Y)
VO(VREF)
0.98
Conditions
Temperature Coefficient of Output Voltage ∆VO/∆T(∆VREF/∆T)
(Reference voltage temperature coefficient for SI-8010Y)
Conditions
η
Efficiency
Conditions
Oscillation Frequency
Line Regulation
Load Regulation
Overcurrent Protection Starting Current
fo
Conditions
∆VOLINE
Iq
Quiescent Circuit Current
Conditions
Iq(OFF)
Conditions
Outflow Current at
Low Voltage
EN/SS Pin*
Low Level Voltage
Error Amplifier Voltage Gain
ISSL
Conditions
1.00
1.02
4.90
AEA
max.
5.00
5.10
VIN=30V, Io=0.1A
±0.1
±0.5
VIN=30V, Io=0.1A, Ta=0 to 100°C
VIN=30V, Io=0.1A, Ta=0 to 100°C
86
86
VIN=30V, Io=3A
VIN=30V, Io=3A
130
130
VIN=30V, Io=3A
VIN=30V, Io=3A
90
mV/°C
kHz
90
VIN=10 to 43V, Io=3A
90
30
90
VIN=30V, Io=0.1 to 8A
8.1
8.1
VIN=20V
8
8
VIN=30V, Io=0A, EN/SS=open
500
VIN=30V, EN/SS=0V
10
200
VIN=30V, EN/SS=0V
mV
mA
500
VIN=30V, EN/SS=0V
30
mV
A
VIN=20V
VIN=30V, Io=0A, EN/SS=open
200
V
%
30
VIN=30V, Io=0.1 to 8A
VSSL
Conditions
Unit
typ.
VIN=30V, Io=0.1A
30
Conditions
Is
mIN.
VIN=10 to 43V, Io=3A
∆VOLOAD
Conditions
max.
30
Conditions
SI-8050Y
typ.
10
30
VIN=30V, EN/SS=0V
0.5
0.5
µA
µA
V
VIN=30V
VIN=30V
300
300
V/V
Error Amplifier Transformer Conductance
GEA
800
800
µA/V
Current Sense Amplifier Impedance
1/GCS
0.16
0.16
V/A
Maximum ON Duty
DMAX
92
92
%
Minimum ON Time
DMIN
200
200
nsec
*:R1=8kΩ, R2=2kΩ when Ta=25°C and Vo=5V
54
ICs
SI-8000Y
SI-8000Y
5 SS
5 SS
C6
C6
Soft start
Soft start
+VOUT. ON/OFF
SI-8000Y Series
■External Dimensions (TO220F-7)
(Unit : mm)
10.0±0.2
4.2±0.2
2.8±0.2
φ 3.2±0.2
7.9±0.2
Pin Assignment
q BS
w SW
e VIN
r GND
t COMP
y FB
u EN/SS
7.6±0.1
(Measured at the root)
(3-R1)
6-0.74±0.15
10±0.5
2.8
17.6±0.7
16.9±0.3
4.0±0.2
0.5
Gate burr
+0.2
6-0.65 –0.1
(5.3)
R-end
Plastic Mold Package Type
Flammability: UL94V-0
Product Mass: Approx. 2.3g
+0.2
0.45 –0.1
6×P1.27±0.15–7.62±0.15
4.3±0.5
3.6±0.5
(Measured at the root)
0.5
1 234 567
0.5
Plan View
■Block Diagram
SI-8010Y
SI-8050Y
3
3
IN
Pre
REG
Current
Sence
Amp
OSC
Pre
REG
+
–
2
UVLD
TSD
OCP
EN/SS
+
–
7
EN/
SS
SW
–
–
+
6
1.0V
BS
DRIVE
PWM
LOGIC
2
UVLD
TSD
OCP
EN/SS
5 COMP
1
Boot
5vREG
BS
DRIVE
PWM
LOGIC
EN/
SS
Current
Sence
Amp
OSC
1
Boot
5vREG
7
IN
SW
5 COMP
6
–
–
+
FB
Amp
1.0V
FB
Amp
GND
GND
4
4
■Typical Connection Diagram
Csn1 Rsn1
Csn1 Rsn1
Vin
Vin
3
C1 + C2
IN
7
EN/SS
C6
C5
1
BS SW
3
L1
2
SI-8010Y
C1 + C2
D1
R1
6
COMP
GND
5
4
C4
Vo
FB
IN
7
EN/SS
C3
+
C6
R2
Csn2
BS SW
L1
2
SI-8050Y
COMP
GND
5
4
Vo
D1
6
C4
C7
C5
1
C3
+
FB
Csn2
C7
R3
Rsn2
GND
R3
GND
SI-8010Y
C1:2200µF/50V
Csn1,2=2200pF (When Vin>40V)
C2:4.7µF/50V
Rsn1,2=10Ω (When Vin>40V)
C3:470µF/25V
C4:1200pF*1
C5:0.22µF/50V
C7:680pF*1
L1:47µH
D1:FMW-2156 (Sanken)
R1:8kΩ*1
R2:2kΩ
R3:39kΩ*1
*1: When Vo=5V
GND
Rsn2
GND
SI-8050Y
C1:2200µF/50V
Csn1,2=2200pF (When Vin>40V)
C2:4.7µF/50V
Rsn1,2=10Ω (When Vin>40V)
C3:470µF/25V
C4:1200pF
C5:0.22µF/50V
C7:680pF
L1:56µH
D1:FMW-2156 (Sanken)
R3:39kΩ
ICs
55