SiHB33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.098 Qg (Max.) (nC) 155 Qgs (nC) 22 Qgd (nC) 43 Configuration Single D D2PAK (TO-263) APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting - High-intensity discharge (HID) - Light emitting diodes (LEDs) • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power suppliers (SMPS) • Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge G G D S S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB33N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current (Typical) a ID IDM Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c for 10 s UNIT V 33 21 A 100 2.2 W/°C EAS 691 mJ PD 278 W TJ, Tstg -55 to +150 °C dV/dt 70 20 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-0278-Rev. B, 23-Feb-15 Document Number: 91593 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHB33N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.45 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance a VDS VGS = 0 V, ID = 250 μA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.72 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ±1 VDS = 480 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 - 0.085 0.098 Ω - 12 - S VGS = 10 V ID = 16.5 A VDS = 30 V, ID = 16.5 A μA Dynamic Input Capacitance Ciss VGS = 0 V, - 3454 - Output Capacitance Coss VDS = 100 V, - 154 - Reverse Transfer Capacitance Crss f = 1 MHz - 8 - Effective Output Capacitance, Energy Related b Co(er) - 121 - Effective Output Capacitance, Time Related c Co(tr) - 437 - - 103 155 - 22 - - 43 - - 28 56 - 43 86 - 161 242 - 48 96 - 0.5 - - - 33 S - 100 - TJ = 25 °C, IS = 16.5 A, VGS = 0 V - 0.9 1.2 V - 162 324 ns - 1.0 2.0 μC - 13 - A pF VGS = 0 V, VDS = 0 V to 480 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 16.5 A, VDS = 480 V VDD = 480 V, ID = 16.5 A Rg = 9.1 Ω, VGS = 10 V f = 1 MHz, open drain nC ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = IS = 16.5 A, dI/dt = 100 A/μs, VR = 25 V Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. c. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS. S15-0278-Rev. B, 23-Feb-15 Document Number: 91593 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHB33N60EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 120 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 80 ID = 16.5 A RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) 100 TJ = 25 °C 60 40 20 2.5 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 0 5 10 15 20 25 - 60 - 40 - 20 30 80 40 60 80 100 120 140 160 10 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V TJ = 150 °C Ciss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance (pF) ID, Drain-to-Source Current (A) 20 Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics 60 0 TJ, Junction Temperature (°C) VDS, Drain-to-Source Voltage (V) 40 20 Coss 100 Crss 10 0 1 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) 30 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 25 120 5000 80 60 TJ = 150 °C 15 Eoss Coss 500 10 Eoss (μJ) 20 Coss (pF) ID, Drain-to-Source Current (A) 100 40 5 20 VDS = 26.4 V 50 0 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-0278-Rev. B, 23-Feb-15 25 0 0 100 200 300 VDS 400 500 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91593 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHB33N60EF www.vishay.com Vishay Siliconix 40 VDS = 480 V VDS = 300 V VDS = 120 V 20 30 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 20 10 4 0 0 0 40 80 120 160 Qg, Total Gate Charge (nC) 200 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 25 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 750 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage (V) 1.4 1.6 Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this Area Limited by RDS(on) ID, Drain Current (A) 100 725 700 675 650 625 600 575 ID = 250 μA 550 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature IDM Typical 10 Limited by RDS(on)* 100 μs 1 1 ms TC = 25 °C TJ = 150 °C Single Pulse 10 ms BVDSS Limited 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S15-0278-Rev. B, 23-Feb-15 Document Number: 91593 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHB33N60EF www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ D.U.T RG 12 V + - IAS 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-0278-Rev. B, 23-Feb-15 Document Number: 91593 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHB33N60EF www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91593. S15-0278-Rev. B, 23-Feb-15 Document Number: 91593 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000