datasheet

SKM600GA17E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
1021
A
Tc = 80 °C
775
A
600
A
ICnom
ICRM
SEMITRANS® 4
IGBT4 Modules
SKM600GA17E4
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 1000 V
VGE ≤ 15 V
VCES ≤ 1700 V
1800
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
629
A
Tc = 80 °C
463
A
600
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
IFRM
IFRM = 2xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
3420
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
Symbol
•
•
•
•
VCE(sat)
IGBT
VCE0
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
A
°C
4000
V
Characteristics
Typical Applications*
AC inverter drives
UPS
Electronic welders
Switched reluctance motor
AC sinus 50 Hz, t = 1 min
500
-40 ... 125
Conditions
IC = 600 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.90
2.20
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
1.1
1.2
V
Tj = 150 °C
1
1.1
V
Tj = 25 °C
1.33
1.67
mΩ
2.08
2.25
mΩ
5.8
6.4
V
5
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 24 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Eoff
Tj = 25 °C
VCC = 1200 V
IC = 600 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 7580 A/µs
di/dtoff = 2830 A/µs
du/dt = 5420 V/µs
Rth(j-c)
per IGBT
td(on)
tr
Eon
td(off)
tf
Tj = 150 °C
5.2
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
48
nF
f = 1 MHz
2.00
nF
f = 1 MHz
Tj = 150 °C
1.52
nF
4800
nC
1.3
Ω
213
ns
Tj = 150 °C
78
ns
Tj = 150 °C
258
mJ
Tj = 150 °C
908
ns
Tj = 150 °C
184
ns
Tj = 150 °C
246
mJ
0.042
K/W
GA
© by SEMIKRON
Rev. 2 – 04.05.2015
1
SKM600GA17E4
Characteristics
Symbol
Conditions
typ.
max.
Unit
Tj = 25 °C
1.98
2.37
V
Tj = 150 °C
2.11
2.52
V
Tj = 25 °C
1.32
1.56
V
Tj = 150 °C
1.08
1.22
V
Tj = 25 °C
1.10
1.35
mΩ
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 7000 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 1200 V
per diode
1.71
2.2
mΩ
15
nH
TC = 25 °C
0.45
mΩ
TC = 125 °C
0.65
mΩ
Inverse diode
VF = VEC IF = 600 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMITRANS® 4
IGBT4 Modules
SKM600GA17E4
IRRM
Qrr
Err
Rth(j-c)
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
555
A
185
µC
132
mJ
0.095
K/W
Module
LCE
RCC'+EE'
Features
chiplevel
min.
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
to terminals
0.038
K/W
3
0.02
5
Nm
M6
2.5
5
Nm
M4
1.1
2
Nm
330
g
w
Typical Applications*
•
•
•
•
AC inverter drives
UPS
Electronic welders
Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
GA
2
Rev. 2 – 04.05.2015
© by SEMIKRON
SKM600GA17E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 04.05.2015
3
SKM600GA17E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 2 – 04.05.2015
© by SEMIKRON
SKM600GA17E4
SEMITRANS 4
GA
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 04.05.2015
5