90525.pdf

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Technical changes to table I. Editorial changes throughout.
91-12-23
M. L. Poelking
B
Update boilerplate to MIL-PRF-38535 requirements. - CFS
03-08-04
Thomas M. Hess
C
Update boilerplate to current MIL-PRF-38535 requirements. - CFS
08-07-16
Thomas M. Hess
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16
REV STATUS
REV
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OF SHEETS
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PMIC N/A
PREPARED BY
Tim H. Noh
STANDARD
MICROCIRCUIT
DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
CHECKED BY
Tim H. Noh
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
William K. Heckman
DRAWING APPROVAL DATE
MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL
ASYNCHRONOUS RECEIVER TRANSMITTER
MONOLITHIC SILICON
91-02-05
AMSC N/A
REVISION LEVEL
C
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
1 OF
5962-90525
16
5962-E382-08
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example.
5962
-
90525
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
M
Q
X
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
HD-6402R
HD-6402B
Circuit function
Clock frequency (fclk)
Universal asynchronous receiver transmitter (UART)
Universal asynchronous receiver transmitter (UART)
2.0 MHz
8.0 MHz
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Q
Descriptive designator
GDIP1-T40 or CDIP2-T40
Terminals
Package style
40
Dual-in-line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
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REVISION LEVEL
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1.3 Absolute maximum ratings.
1/
Supply voltage............................................................................................................
Input, output, or I/O voltage applied ...........................................................................
Junction temperature (TJ)...........................................................................................
Storage temperature range ........................................................................................
Lead temperature (soldering, 10 seconds).................................................................
Power dissipation (PD)................................................................................................
Thermal resistance, junction-to-case (θJC) .................................................................
Thermal resistance, junction-to-ambient (θJA) ............................................................
+8.0 V
GND – 0.5 V dc to VCC +0.5 V dc
+175°C
-65°C to +150°C
+300°C
1.03 W
See MIL-STD-1835
48.3°C/W
1.4 Recommended operating conditions.
Supply voltage (VCC) .................................................................................................. +4.5 V dc to +5.5 V dc
Case operating temperature range (TC) ..................................................................... -55°C to +125°C
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535
-
Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
-
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103
MIL-HDBK-780
-
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
_______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
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REVISION LEVEL
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3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Control definition. The control definition shall be as specified on figure 2.
3.2.4 Block diagram. The block diagram shall be as specified on figure 3.
3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and
herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 105 (see MIL-PRF-38535, appendix A).
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REVISION LEVEL
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TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Input high voltage
VIH
VCC = 5.5 V
1, 2, 3
All
Input low voltage
VIL
VCC = 4.5 V
1, 2, 3
All
Input leakage current
II
VO = 0 V or 5.5 V,
VCC = 5.5 V
1, 2, 3
All
-1.0
Output high voltage
VOH
IOH = -2.5 mA,
VCC = 4.5 V 2/
1, 2, 3
All
3.0
IOH = -100 μA,
VCC = 4.5 V 2/
Max
2.3
V
0.8
V
1.0
μA
V
VCC –
0.4
Output low voltage
VOL
IOL = +2.5 mA,
VCC = 4.5 V 2/
1, 2, 3
All
Output leakage current
IO
VO = 0 V or 5.5 V,
VCC = 5.5 V
1, 2, 3
All
Operating supply current
ICC
VO = 0 V or 5.5 V,
VCC = 5.5 V, fclk = 2.0 MHz,
Outputs open
1, 2, 3
3/
Unit
0.4
V
1.0
μA
All
2.0
mA
1, 2, 3
All
100
μA
-1.0
Standby supply current
ISB
VO = 0 V or 5.5 V,
VCC = 5.5 V, Outputs open
Input capacitance
CIN
All measurements are referenced
to device GND,
4
All
25
pF
Output capacitance
COUT
f = 1.0 MHz, TA = +125°C,
See 4.4.1c
4
All
25
pF
7, 8
All
Functional tests
See 4.4.1b
See footnotes at end of table.
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REVISION LEVEL
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
9, 10, 11
01
2.0
02
8.0
Min
Clock frequency
CRL, DRR, and TBRL
pulse width
fCLK
See figure 4.
CL = 50 pF,
VCC = 4.5 V
tr = tf = 1.0 ns/V
tPW
9, 10, 11
01
150
02
75
Unit
Max
MHz
ns
Pulse width MR
tMR
9, 10, 11
All
150
ns
Input data setup time
tSET
9, 10, 11
01
50
ns
02
20
01
60
02
20
Input data hold time
Output enable time
tHOLD
9, 10, 11
9, 10, 11
tEN
ns
01
160
02
35
ns
1/
All tests shall be performed using the worst case conditions, unless otherwise specified.
2/
Interchanging of force and sense conditions is permitted. Relaxed input levels for VOL and VOH may be used if separate VIL
and VIH tests that guarantee threshold voltage transition are performed.
3/
If not tested, shall be guaranteed to the limits specified in table I.
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Device types: 01 and 02
Case outline Q
Terminal
number
Terminal
symbol
Terminal
number
Terminal symbol
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
VCC
NC
GND
RRD
RBR8
RBR7
RBR6
RBR5
RBR4
RBR3
RBR2
RBR1
PE
FE
OE
SFD
RRC
DRR
DR
RRI
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
MR
TBRE
TBRL
TRE
TRO
TBR1
TBR2
TBR3
TBR4
TBR5
TBR6
TBR7
TBR8
CRL
PI
SBS
CLS2
CLS1
EPE
TRC
NC = No connection
FIGURE 1. Terminal connections.
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Control word
Character format
CLS2
CLS1
PI
EPE
SBS
START
BIT
DATA
BITS
PARITY
BIT
STOP
BITS
0
0
0
0
0
1
5
ODD
1
0
0
0
0
1
1
5
ODD
1.5
0
0
0
1
0
1
5
EVEN
1
0
0
0
1
1
1
5
EVEN
1.5
0
0
1
X
0
1
5
NONE
1
0
0
1
X
1
1
5
NONE
1.5
0
1
0
0
0
1
6
ODD
1
0
1
0
0
1
1
6
ODD
2
0
1
0
1
0
1
6
EVEN
1
0
1
0
1
1
1
6
EVEN
2
0
1
1
X
0
1
6
NONE
1
0
1
1
X
1
1
6
NONE
2
1
0
0
0
0
1
7
ODD
1
1
0
0
0
1
1
7
ODD
2
1
0
0
1
0
1
7
EVEN
1
1
0
0
1
1
1
7
EVEN
2
1
0
1
X
0
1
7
NONE
1
1
0
1
X
1
1
7
NONE
2
1
1
0
0
0
1
8
ODD
1
1
1
0
0
1
1
8
ODD
2
1
1
0
1
0
1
8
EVEN
1
1
1
0
1
1
1
8
EVEN
2
1
1
1
X
0
1
8
NONE
1
1
1
1
X
1
1
8
NONE
2
X = Irrelevant
0 = Low level voltage
1 = High level voltage
FIGURE 2. Control definition.
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Note: These outputs are three-state.
FIGURE 3. Block diagram.
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Note: CL includes stray and jig capacitance.
FIGURE 4. Switching waveforms and test circuit.
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FIGURE 4. Switching waveforms and test circuit - Continued.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
b.
Burn-in test, method 1015 of MIL-STD-883.
(1)
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1015 of MIL-STD-883.
(2)
TA = +125°C, minimum.
Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table II herein.
b.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device. For device
classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
c.
Subgroup 4 (CIN and COUT measurements) shall be measured only for the initial test and after process or design
changes which may affect capacitance. Sample size is 15 devices with no failures, and all input and output terminals
tested.
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TABLE II. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
---
---
1, 7, 9
Final electrical
parameters (see 4.2)
1, 2, 3, 7, 8A, 8B,
9, 10, 11 1/
1, 2, 3, 7, 8A, 8B,
9, 10, 11 1/
1, 2, 3, 7, 8A, 8B,
9, 10, 11 2/
1, 2, 3, 4, 7, 8A,
8B, 9, 10, 11
1, 2, 3, 4, 7, 8A,
8B, 9, 10, 11
1, 2, 3, 4, 7, 8A,
8B, 9, 10, 11
Group C end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group D end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group E end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group A test
requirements (see 4.4)
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroups 1 and 7.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, D, or E. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
STANDARD
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REVISION LEVEL
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4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after
exposure, to the subgroups specified in table II herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone
(614) 692-00547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535, MIL-HDBK-1331, and as follows:
Symbol
Definition
Functional description
VCC
Positive supply current. A .01μF decoupling capacitor from the VCC pin to the
GND pin is recommended.
NC
No connection.
GND
Ground.
RRD
Receiver register
disable
A high level on receiver register disable forces the receiver holding outputs
RBR1 – RBR8 to high impedance state.
RBR1 through
RBR8
Receiver buffer
register
The contents of the receiver buffer register appear on these three-state
outputs. Word formats less than 8 characters are right justified to RBR1.
PE
Parity error
A high level on parity error indicates received parity does not match parity
programmed by control bits. When parity is inhibited this output is low.
FE
Framing error
A high level on framing error indicates the first stop bit was invalid.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-90525
A
REVISION LEVEL
C
SHEET
14
Symbol
Definition
Functional description
OE
Overrun error
A high level on overrun error indicates the data received flag was not cleared
before the last character was transferred to the receiver buffer register.
SFD
Status flags
disable
A high level on status flags disable forces the outputs PE, FE, OE, DR, and
TBRE to a high impedance state.
RRC
Receiver register
clock
The receiver register clock is 16X the receiver data rate.
DRR
Data received
reset
A low level on data received reset clears the data received output DR to a
low level.
DR
Data received
A high level on data received indicates a character has been received and
transferred to the receiver buffer register.
RRI
Receiver register
input
Serial data on receiver register input is clocked into the receiver register.
MR
Master reset
A high level on master reset clears PE, FE, OE, and DR to a low level and
sets the transmitter register empty (TRE) to a high level 18 clock cycles after
MR falling edge. MR does not clear the receiver buffer register. This input
must be pulsed at least once after power-up. The reset pulse should meet
VIH and tMR. Wait 18 clock cycles after the falling edge of MR before
beginning operation.
TBRE
Transmitter
buffer register
empty
A high level on transmitter buffer register empty indicates the transmitter
buffer register has transferred its data to the transmitter register and is ready
for new data.
TBRL
Transmitter
buffer register
load
A low level on transmitter buffer register load transfers data from inputs
TBR1 – TBR8 into the transmitter buffer register. A low-to-high transition on
TBRL initiates data transfer to the transmitter register. If busy, transfer is
automatically delayed so that the two characters are transmitted end-to-end.
TRE
Transmitter
register empty
A high level on transmitter register empty indicates completed transmission
of a character including stop bits.
TRO
Transmitter
register output
Character data, start data and stop bits appear serially at the transmitter
register output.
TBR1 through
TBR8
Transmitter
buffer register
Character data is loaded into the transmitter buffer register via inputs
TBR1 – TBR8. For character formats less than 8 bits the TBR8, 7, and 6
inputs are ignored corresponding to their programmed word length.
CRL
Control register
load
A high level on control register load loads the control register with the control
word. The control word is latched on the falling edge of CRL.
PI
Parity inhibit
A high level on parity inhibit inhibits parity generation, parity checking, and
forces PE output low.
SBS
Stop bit select
A high level on stop bit select selects 1.5 stop bits for 5 character format and
2 stop bits for other lengths.
CLS1, CLS2
Character length
selected
These inputs program the character length selected (CLS1 low, CLS2 low, 5
bits) (CLS1 high, CLS2 low, 6 bits) (CLS1 low, CLS2 high, 7 bits) ( CLS1
high, CLS2 high, 8 bits).
EPE
Even parity
enable
When PI is low, a high level on even parity enable generates and checks
even parity. A low level selects odd parity.
TRC
Transmitter
register clock
The transmitter register clock is 16X the transmit data rate.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-90525
A
REVISION LEVEL
C
SHEET
15
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-90525
A
REVISION LEVEL
C
SHEET
16
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 08-07-16
Approved sources of supply for SMD 5962-90525 are listed below for immediate acquisition information only and shall
be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised
to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate
of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of
supply at http://www.dscc.dla.mil/Programs/Smcr/ .
Vendor
similar
PIN 2/
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
5962-9052501MQA
34371
HD1-6402R/883
5962-9052502MQA
34371
HD1-6402B/883
1/
2/
The lead finish shown for each PIN representing a
hermetic package is the most readily available from
the manufacturer listed for that part. If the desired
lead finish is not listed contact the vendor to
determine its availability.
Caution. Do not use this number for item acquisition.
Items acquired to this number may not satisfy the
performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
Point of contact: 1650 Robert J. Conlan Blvd.
Palm Bay, FL 32905
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.