SiR624DP www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () MAX. ID (A) a 0.060 at VGS = 10 V 18.6 0.064 at VGS = 7.5 V 18 Qg (TYP.) 15 nC • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8 Single D 5 D 6 D 7 • ThunderFET® technology optimizes balance of RDS(on), Qg, Qsw, and Qoss D 8 APPLICATIONS D • Fixed telecom • DC/DC converter 6. 15 m m 1 .15 mm 3 S 4 G Bottom View 5 Top View 2 S 1 S • Primary and secondary side switch G • Synchronous rectification S Ordering Information: SiR624DP-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 18.6 TC = 70 °C 14.8 TA = 25 °C ID Continuous Source-Drain Diode Current 4.6 b, c Single Pulse Avalanche Current IDM TC = 25 °C TA = 25 °C L = 0.1 mH Single Pulse Avalanche Energy TC = 70 °C TA = 25 °C 26 IS 4.5 b, c IAS 15 EAS 11.25 mJ 52 33 PD W 5 b, c 3.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 50 TC = 25 °C Maximum Power Dissipation V 5.7 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL b, f Maximum Junction-to-Case (Drain) TYPICAL MAXIMUM t 10 s RthJA 20 25 Steady State RthJC 1.9 2.4 UNIT °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. S16-0998-Rev. A, 23-May-16 Document Number: 67607 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR624DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 200 - - - V 156 - - -6.7 - 2 - 4 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ ID = 250 μA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = 200 V, VGS = 0 V - - 1 VDS = 200 V, VGS = 0 V, TJ = 70 °C - - 10 VDS 5 V, VGS = 10 V 30 - - A VGS = 10 V, ID = 10 A - 0.050 0.060 VGS = 7.5 V, ID = 10 A - 0.051 0.064 VDS = 15 V, ID = 10 A - 26 - - 1110 - - 100 - - 8.3 - - 19.5 30 - 15 23 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a RDS(on) gfs μA S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss Rg Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 100 V, VGS = 0 V, f = 1 MHz VDS = 100 V, VGS = 10 V, ID = 10 A VDS = 100 V, VGS = 7.5 V, ID = 10 A - 5.3 - - 5.2 - VDS = 100 V, VGS = 0 V - 36 54 f = 1 MHz 0.5 1.6 3.0 - 9 18 - 18 36 - 16 32 tf - 8 16 td(on) - 11 22 - 45 90 - 15 30 - 23 46 td(on) tr td(off) tr td(off) VDD = 100 V, RL = 10 ID 10 A, VGEN = 10 V, Rg = 1 VDD = 100 V, RL = 10 ID 10 A, VGEN = 7.5 V, Rg = 1 tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 5 A IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C - - 26 - - 50 - 0.81 1.1 V - 126 252 ns - 360 720 nC - 49 - - 77 - A ns Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0998-Rev. A, 23-May-16 Document Number: 67607 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR624DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 80 60 10000 10000 VGS = 10 V thru 7 V 1000 32 100 VGS = 5 V 16 1000 36 1st line 2nd line VGS = 6 V 48 2nd line ID - Drain Current (A) 48 1st line 2nd line 2nd line ID - Drain Current (A) 64 24 TC = 25 °C 100 12 TC = 125 °C TC = -55 °C VGS = 4 V 0 0 10 0 3 6 9 12 15 10 0 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 2000 10000 10000 1600 0.05 100 VGS = 10 V 0.04 800 100 400 0.03 20 30 40 Crss 50 10 0 20 40 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title VDS = 100 V VDS = 125 V 1000 1st line 2nd line VDS = 75 V 4 100 2 0 10 4 8 12 16 20 2nd line RDS(on) - On-Resistance (Normalized) ID = 10 A 6 10000 2.5 10000 8 100 Axis Title 10 0 60 ID = 10 A 2.0 VGS = 10 V 1.5 VGS = 7.5 V 100 1.0 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-0998-Rev. A, 23-May-16 1000 1st line 2nd line 10 Coss 0 10 0 1000 Ciss 1200 1st line 2nd line 1000 VGS = 7.5 V 0.06 2nd line C - Capacitance (pF) 0.07 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 8 VDS - Drain-to-Source Voltage (V) 2nd line 0.08 2nd line VGS - Gate-to-Source Voltage (V) 6 Document Number: 67607 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR624DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.25 10000 1000 1 TJ = 25 °C 0.1 100 0.01 0.2 1000 0.15 1st line 2nd line TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 2nd line RDS(on) - On-Resistance (Ω) ID = 10 A 10 TJ = 125 °C 0.1 100 0.05 TJ = 25 °C 0.001 10 0 0.2 0.4 0.6 0.8 1.0 0 10 3 1.2 4 5 6 8 9 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 200 10000 0.2 10000 160 1000 -0.4 120 1st line 2nd line 2nd line Power (W) 1000 ID = 5 mA -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 7 80 100 100 ID = 250 μA -0.7 40 -1.0 0 0.001 10 -50 -25 0 25 50 75 100 125 150 10 0.01 0.1 1 10 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 IDM limited 100 μs ID limited 1 ms 1000 1 1st line 2nd line 2nd line ID - Drain Current (A) 10 10 ms Limited by RDS(on) (1) 0.1 100 ms 1s 100 10 s 0.01 DC TA = 25 °C Single pulse 0.001 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-0998-Rev. A, 23-May-16 Document Number: 67607 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR624DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 25 10000 1000 15 1st line 2nd line 2nd line ID - Drain Current (A) 20 10 100 5 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 70 10000 2.5 56 10000 2.0 1.5 1st line 2nd line 28 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 42 1.0 100 14 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-0998-Rev. A, 23-May-16 Document Number: 67607 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR624DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.1 0.1 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 65 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.05 0.1 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67607. S16-0998-Rev. A, 23-May-16 Document Number: 67607 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.56 D3 1.32 D4 D5 E 6.05 E1 5.79 E2 (for AL product) 3.30 E2 (for other product) 3.48 E3 3.68 E4 (for AL product) E4 (for other product) e K (for AL product) K (for other product) K1 0.56 H 0.51 L 0.51 L1 0.06 0° W 0.15 M ECN: C13-0702-Rev. K, 20-May-13 DWG: 5881 Revison: 20-May-13 b D2 INCHES NOM. MAX. MIN. NOM. MAX. 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.48 3.66 3.78 0.58 typ. 0.75 typ. 1.27 BSC 1.45 typ. 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.66 3.84 3.91 0.238 0.228 0.130 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.137 0.144 0.149 0.023 typ. 0.030 typ. 0.050 BSC 0.057 typ. 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 1 0.246 0.236 0.144 0.151 0.154 0.028 0.028 0.008 12° 0.014 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK® SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available just a few years ago, it is important for power MOSFET packaging technology to keep pace. It should be obvious that degradation of a high performance die by the package is undesirable. PowerPAK is a new package technology that addresses these issues. In this application note, PowerPAK’s construction is described. Following this mounting information is presented including land patterns and soldering profiles for maximum reliability. Finally, thermal and electrical performance is discussed. PowerPAK SO-8 SINGLE MOUNTING The PowerPAK single is simple to use. The pin arrangement (drain, source, gate pins) and the pin dimensions are the same as standard SO-8 devices (see figure 2). Therefore, the PowerPAK connection pads match directly to those of the SO-8. The only difference is the extended drain connection area. To take immediate advantage of the PowerPAK SO-8 single devices, they can be mounted to existing SO-8 land patterns. THE PowerPAK PACKAGE The PowerPAK package was developed around the SO-8 package (figure 1). The PowerPAK SO-8 utilizes the same footprint and the same pin-outs as the standard SO-8. This allows PowerPAK to be substituted directly for a standard SO-8 package. Being a leadless package, PowerPAK SO-8 utilizes the entire SO-8 footprint, freeing space normally occupied by the leads, and thus allowing it to hold a larger die than a standard SO-8. In fact, this larger die is slightly larger than a full sized DPAK die. The bottom of the die attach pad is exposed for the purpose of providing a direct, low resistance thermal path to the substrate the device is mounted on. Finally, the package height is lower than the standard SO-8, making it an excellent choice for applications with space constraints. Standard SO-8 PowerPAK SO-8 Fig. 2 The minimum land pattern recommended to take full advantage of the PowerPAK thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK SO-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package. Fig. 1 Revision: 16-Mai-13 PowerPAK 1212 Devices Document Number: 71622 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 APPLICATION NOTE This land pattern can be extended to the left, right, and top of the drawn pattern. This extension will serve to increase the heat dissipation by decreasing the thermal resistance from the foot of the PowerPAK to the PC board and therefore to the ambient. Note that increasing the drain land area beyond a certain point will yield little decrease in foot-to-board and foot-to-ambient thermal resistance. Under specific conditions of board configuration, copper weight and layer stack, experiments have found that more than about 0.25 in2 to 0.5 in2 of additional copper (in addition to the drain land) will yield little improvement in thermal performance. Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those of the SO-8. As in the single-channel package, the only exception is the extended drain connection area. Manufacturers can likewise take immediate advantage of the PowerPAK SO-8 dual devices by mounting them to existing SO-8 dual land patterns. For the lead (Pb)-free www.vishay.com/doc?73257. solder profile, see To take the advantage of the dual PowerPAK SO-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this document. The gap between the two drain pads is 24 mils. This matches the spacing of the two drain pads on the PowerPAK SO-8 dual package. Fig. 3 Solder Reflow Temperature Profile REFLOW SOLDERING Ramp-Up Rate Vishay Siliconix surface-mount packages meet solder reflow reliability requirements. Devices are subjected to solder reflow as a test preconditioning and are then reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow temperature profile used, and the temperatures and time duration, are shown in figures 3 and 4. Temperature at 150 - 200 °C + 3 °C /s max. 120 s max. Temperature Above 217 °C 60 - 150 s Maximum Temperature 255 + 5/- 0 °C Time at Maximum Temperature 30 s Ramp-Down Rate + 6 °C/s max. 30 s 260 °C 3 °C(max) 6 °C/s (max.) 217 °C 150 - 200 °C APPLICATION NOTE 150 s (max.) 60 s (min.) Pre-Heating Zone Reflow Zone Maximum peak temperature at 240 °C is allowed. Fig. 4 Solder Reflow Temperatures and Time Durations Revision: 16-Mai-13 Document Number: 71622 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, RthJC, or the junction-to-foot thermal resistance, RthJF This parameter is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device only, in other words, independent of the properties of the object to which the device is mounted. Table 1 shows a comparison of the DPAK, PowerPAK SO-8, and standard SO-8. The PowerPAK has thermal performance equivalent to the DPAK, while having an order of magnitude better thermal performance over the SO-8. TABLE 1 - DPAK AND POWERPAK SO-8 EQUIVALENT STEADY STATE PERFORMANCE Thermal Resistance RthJC DPAK PowerPAK SO-8 Standard SO-8 1.2 °C/W 1 °C/W 16 °C/W Thermal Performance on Standard SO-8 Pad Pattern Because of the common footprint, a PowerPAK SO-8 can be mounted on an existing standard SO-8 pad pattern. The question then arises as to the thermal performance of the PowerPAK device under these conditions. A characterization was made comparing a standard SO-8 and a PowerPAK device on a board with a trough cut out underneath the PowerPAK drain pad. This configuration restricted the heat flow to the SO-8 land pads. The results are shown in figure 5. Because of the presence of the trough, this result suggests a minimum performance improvement of 10 °C/W by using a PowerPAK SO-8 in a standard SO-8 PC board mount. The only concern when mounting a PowerPAK on a standard SO-8 pad pattern is that there should be no traces running between the body of the MOSFET. Where the standard SO-8 body is spaced away from the pc board, allowing traces to run underneath, the PowerPAK sits directly on the pc board. Thermal Performance - Spreading Copper Designers may add additional copper, spreading copper, to the drain pad to aid in conducting heat from a device. It is helpful to have some information about the thermal performance for a given area of spreading copper. Figure 6 shows the thermal resistance of a PowerPAK SO-8 device mounted on a 2-in. 2-in., four-layer FR-4 PC board. The two internal layers and the backside layer are solid copper. The internal layers were chosen as solid copper to model the large power and ground planes common in many applications. The top layer was cut back to a smaller area and at each step junction-to-ambient thermal resistance measurements were taken. The results indicate that an area above 0.3 to 0.4 square inches of spreading copper gives no additional thermal performance improvement. A subsequent experiment was run where the copper on the back-side was reduced, first to 50 % in stripes to mimic circuit traces, and then totally removed. No significant effect was observed. Rth vs. Spreading Copper (0 %, 50 %, 100 % Back Copper) 56 Si4874DY vs. Si7446DP PPAK on a 4-Layer Board SO-8 Pattern, Trough Under Drain Impedance (C/watts) 60 Impedance (C/watts) APPLICATION NOTE 50 40 Si4874DY 30 51 46 100 % 41 Si7446DP 0% 20 50 % 36 10 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Spreading Copper (sq in) 0 0.0001 0.01 1 100 10000 Fig. 6 Spreading Copper Junction-to-Ambient Performance Pulse Duration (sec) Fig. 5 PowerPAK SO-8 and Standard SO-0 Land Pad Thermal Path Revision: 16-Mai-13 Document Number: 71622 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note AN821 www.vishay.com Vishay Siliconix PowerPAK® SO-8 Mounting and Thermal Considerations SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET RDS(on) with temperature (figure 7). On-Resistance vs. Junction Temperature R DS(on) - On-Resistance ( ) (Normalized) 1.8 VGS = 10 V ID = 23 A 1.6 1.2 Minimizing the thermal rise above the board temperature by using PowerPAK has not only eased the thermal design but it has allowed the device to run cooler, keep rDS(on) low, and permits the device to handle more current than the same MOSFET die in the standard SO-8 package. 1.0 CONCLUSIONS 1.4 PowerPAK SO-8 has been shown to have the same thermal performance as the DPAK package while having the same footprint as the standard SO-8 package. The PowerPAK SO-8 can hold larger die approximately equal in size to the maximum that the DPAK can accommodate implying no sacrifice in performance because of package limitations. 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Fig. 7 MOSFET RDS(on) vs. Temperature A MOSFET generates internal heat due to the current passing through the channel. This self-heating raises the junction temperature of the device above that of the PC board to which it is mounted, causing increased power dissipation in the device. A major source of this problem lies in the large values of the junction-to-foot thermal resistance of the SO-8 package. PowerPAK SO-8 minimizes the junction-to-board thermal resistance to where the MOSFET die temperature is very close to the temperature of the PC board. Consider two devices mounted on a PC board heated to 105 °C by other components on the board (figure 8). PowerPAK SO-8 APPLICATION NOTE Suppose each device is dissipating 2.7 W. Using the junction-to-foot thermal resistance characteristics of the PowerPAK SO-8 and the standard SO-8, the die temperature is determined to be 107 °C for the PowerPAK (and for DPAK) and 148 °C for the standard SO-8. This is a 2 °C rise above the board temperature for the PowerPAK and a 43 °C rise for the standard SO-8. Referring to figure 7, a 2 °C difference has minimal effect on RDS(on) whereas a 43 °C difference has a significant effect on RDS(on). Recommended PowerPAK SO-8 land patterns are provided to aid in PC board layout for designs using this new package. Thermal considerations have indicated that significant advantages can be gained by using PowerPAK SO-8 devices in designs where the PC board was laid out for the standard SO-8. Applications experimental data gave thermal performance data showing minimum and typical thermal performance in a SO-8 environment, plus information on the optimum thermal performance obtainable including spreading copper. This further emphasized the DPAK equivalency. PowerPAK SO-8 therefore has the desired small size characteristics of the SO-8 combined with the attractive thermal characteristics of the DPAK package. Standard SO-8 107 °C 0.8 °C/W 148 °C 16 C/W PC Board at 105 °C Fig. 8 Temperature of Devices on a PC Board Revision: 16-Mai-13 Document Number: 71622 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000