2N4403 2N4403 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-10-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N4403 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 40 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 40 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEB0 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) - IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. hFE hFE hFE hFE hFE 30 60 100 100 20 – – – – – – – – 300 – Small signal current gain – Kleinsignal-Stromverstärkung hfe 60 – 500 Input impedance – Eingangs-Impedanz hie 1.5 kΩ – 15 kΩ Output admittance – Ausgangs-Leitwert hoe 1 µS – 30 µS Reverse voltage transfer ratio – Spannungsrückwirkung hre – 8*10-4 DC current gain – Kollektor-Basis-Stromverhältnis 2) - IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, - VCE VCE VCE VCE VCE = = = = = 1V 1V 1V 2V 2V h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz 1 2 -4 0.1*10 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2N4403 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. – – – – 0.40 V 0.75 V - VBEsat - VBEsat 0.75 V – – – 0.95 V 1.3 V - ICEX – – 100 nA - IEBV – –- 100 nA fT 200 MHz – – CCBO – – 8.5 pF CEBO – – 30 pf td – – 15 ns tr – – 20 ns ts – – 225 ns tf – – 30 ns Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCEsat - VCEsat Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 35 V, - VEB = 0,4 V Emitter-Base cutoff current – Emitter-Basis-Reststrom - VCE = 35 V, - VEB = 0,4 V Gain-Bandwidth Product – Transitfrequenz - IC = 20 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time - ICon = 10 mA - IBon = 1 mA IBoff = 1 mA fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 2 1 2 RthA < 420 K/W 1) 2N4401 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG