sensor catalog-e

Sensor Catalog
Vol.2
History
ROHM
Sensors
Providing greater convenience, comfort, and safety
ROHM has developed a wide variety of sensor products
based on a number of technologies, ranging from high
reliability semiconductor and piezoelectric ultra-thin film
deposition to silicon deep etching, multilayer film filtering,
wafer bonding, and advanced packaging technologies.
In 2008 the ROHM Group acquired LAPIS Semiconductor
Co., Ltd., which utilizes superior sensing processing
technology, and Kionix Inc. in 2009, a leading supplier of
MEMS accelerometers, magnetometers, and gyro sensors,
making it possible to develop industry-leading sensor
solutions through technological synergy.
ROHM’s broad portfolio of products includes motion sensors
that can accurately detect position and movement, environmental
sensors offering real-time detection of ambient conditions,
interface devices optimized for amplifying/ processing/ analyzing
sensor signals, MCUs for controlling multiple sensors, and
short-range wireless communication ICs and modules (i.e.
Specified Low Power Sub-GHz Band, Bluetooth® Smart Modules,
Wireless LAN Modules).
Combining these devices makes it possible to create
sensors of all types and send/ receive information from virtually
anywhere, opening up new applications and markets.
ROHM offers total solutions optimized to customer needs by
combining proprietary technologies and market-proven
expertise covering the entire manufacturing process, from
silicon ingots used as core materials to device development,
including algorithms and driver software along with
control ASICs and wireless communication modules.
Leveraging the combined resources of the entire Group will
allow ROHM to engage in CSR activities while pursuing greater
safety, efficiency, convenience, and environmental impact
for the consumer, industrial, and automotive markets.
*Bluetooth® is a registered trademark of Bluetooth® SIG.
01
Strengths of
ROHM Group
Sensors
Device Technologies
(Piezoelectric and MEMS)
●
Silicon deep etching technology
●
Wafer bonding technology
Special materials
(piezoelectric elements, gold, and platinum)
●
●
The ROHM Group takes advantage
of technological synergy to develop
innovative sensor products
(i.e. Motion/ Environmental Sensors).
LSI AFE technology
(High-precision analog technology)
● High-precision analog technology
(Low-noise, high-precision A/D converters, etc.)
● Digital calibration technology
(Temperature compensation,
filtering technology, etc.)
Optical filtering technology
Sensing Solutions
(New experience)
● Wireless
● Sensor
● Fitness
technology integration
technology fusion
applications and
support for the elderly
Package technology
(Compact types)
● Chip
Scale Packages (CSP)
● Module
packages
Sensor Catalog 02
Think IoT
IoT
Initiatives
Sensors that detect environmental/physical conditions and
networks for transmitting and sharing sensor data are essential
for achieving IoT (Internet of Things).
The ROHM Group combines disparate proprietary technologies
from ROHM, LAPIS Semiconductor, and Kionix to propose
solutions and implement product development of next-generation
sensor networks. And going forward, ROHM will leverage its
market-proven designs and extensive experience to promote
CSR activities.
Healthcare
Agriculture
Night Vision
Wearable
03
Communication
Index
Motion Sensing
Devices P.05 to P.09
Accelerometer Gyroscope Magnetometer
Pressure
Sensor
Environment Sensors P.10 to P.18
Color
Sensor
Pulse
Sensor
Temperature
Sensor
Ultraviolet
Sensor
Infrared
Sensor
Hall
Sensor
Ambient
Light
Sensor
Interface P.19 to P.20
Capacitive
Switch
Touch
screen
Motion
Detection
Wireless Communication P.21 to P.23
Sensor Control
IoT
Open Platform Example
R&D
P.24
P.25 to P.26
P.27
ROHM’s Thin-Film Piezoelectric
MEMS Solution Service
P.28
Packages
ROHM Group Locations
P.29
P.30
Logistics Management
Sensor Catalog 04
Motion Sensing Devices
Motion
Sensing Devices
Motion sensing devices sense changes in motion and can even recognize
the type of movement.
This enables more intuitive operation when used as an input interface.
Accelerometer
Kionix offers a broad lineup of accelerometers that support a range of applications through class-leading
performance, ultra-low power consumption, high impact resistance, and superior temperature characteristics.
In addition, models incorporating a state machine are available that enable easy programming.
Acceleration
Features
●
●
135μA (typ.)
Low power consumption:
10μA (in 8bit mode)
Applications
● User
Interface
● Power
● Motion
Management
Portable Devices
● Active/
Up to 16bit resolution
Built-in low power wakeup
function
●
Passive Monitoring
● Wearable
● Device
● Health
Optimization
Function
Products with integrated
programmable dual state
machines are available
●
Control UI
● Smartphones/
● Tilt
Detection
● Gesture
Tech
& Fitness
● Notebook
PCs
● Gaming/
Recognition
● Pedometer/
Virtual Reality
Systems
Activity Monitoring
3-Axis Accelerometers
Axis
Full-Scale
G Range
Interface
Output
KX022-1020
3
User-selectable
2g, 4g, 8g
Digital
SPI/I2C
10 to 130
2×2×0.9mm,
12pin, LGA
Compact footprint, Directional Tap/Double-Tap™, Superior
temperature performance, Embedded FIFO/FILO buffer, Digital
high-pass filter output, User-configurable wakeup function
KX023-1025
3
User-selectable
2g, 4g, 8g
Digital
SPI/I2C
10 to 130
3×3×0.9mm,
16pin, LGA
Directional Tap/Double-Tap™, Device orientation detection, Excellent
temperature performance, Low current consumption, Embedded FIFO/FILO
buffer, Digital high-pass filter outputs, User-configurable wake-up function
☆ KX23H-1035
3
User-selectable
2g, 4g, 8g
10 to 135
3×3×0.9mm,
16pin, LGA
Sensor hub device, Built-in 32bit ARM® Cortex® MCU,
High performance low power 3-axis accelerometer
KX122-1037
3
User-selectable
2g, 4g, 8g
10 to 145
2×2×0.9mm,
12pin, LGA
2kb FIFO/FILO, Wide ODRs range (0.781Hz to 25.6kHz),
Directional Tap/Double-Tap™, Free fall, Orientation detection
KXCNL-1010
3
User-selectable
2g, 4g, 6g, 8g
8 to 250
3×3×0.9mm,
16pin, LGA
Dual user-configurable state machines, Low power,
Low noise, Unmatched user flexibility and programmability
KXCJA-1019
3
User-selectable
2g, 4g, 8g
10 to 135
3×3×0.7mm,
10pin, LGA
High stability, Low power, Low noise, Wakeup interrupt,
Superior temperature characteristics, Ultra-thin
KXCJB-1041
3
User-selectable
2g, 4g, 8g
Digital
SPI/I2C
Digital
SPI/I2C
Digital
（I2C）
Digital
（I2C）
Digital
（I2C）
10 to 135
3×3×0.45mm,
10pin, LGA
High stability, Low power, Low noise, Wakeup interrupt,
Superior temperature characteristics, Ultra-thin
KX112-1042
3
User-selectable
2g, 4g, 8g
Digital
(SPI/I2C)
10 to 135
2×2×0.6mm,
12pin, LGA
Compact footprint, Directional Tap/Double-TapTM, Superior
temperature characteristics, Embedded FIFO/FILO buffer, Digital
high-pass filter output, User-configurable wakeup function
KXCJK-1013
3
User-selectable
2g, 4g, 8g
10 to 135
3×3×0.9mm,
16pin, LGA
High stability, Wakeup interrupt, Superior temperature
characteristics, Low current consumption
KXTJ2-1009
3
User-selectable
2g, 4g, 8g
10 to 135
2×2×0.9mm,
12pin, LGA
High stability, Low power, Low noise, Wakeup interrupt,
Compact footprint
KXCJ9-1008
3
User-selectable
2g, 4g, 8g
Digital
（I2C）
Digital
（I2C）
Digital
（I2C）
10 to 135
3×3×0.9mm,
10pin, LGA
High stability, Low power, Low noise, Wakeup interrupt,
Superior temperature characteristics
KXTC9 Series
3
1.5g to 6.0g
Analog
170 to 310
3×3×0.9mm,
10pin, LGA
Low power, Factory programmable internal low-pass
filter
KXR94 Series
3
5×5×1.2mm,
14pin, DFN
Superior temperature characteristics, Low noise density
KXD94 Series
3
5×5×1.2mm,
14pin, DFN
Internal 1kHz filter or User-definable bandwidth,
Mid-range acceleration measurement
☆：Under development
05
Current
Consumption Size, No. of Pins,
and Package
(μA)
Part No.
Multiplexed
500 to 1400
Analog or Digital（SPI）
Multiplexed
700 to 1500
5.0g to 15.0g
Analog
1.0g to 4.0g
Features
*Directional Tap/Double-Tap™ is a trademark of Kionix. *ARM® and Cortex® are registered trademarks of ARM.
Motion Sensing Devices
6-Axis Combo Sensors
(3-Axis Accelerometer
+ 3-Axis Gyroscope)
Kionix’s advanced 6-axis combo sensors (3-Axis Accelerometer + 3-Axis Gyroscope) feature a low power
architecture, I2C/ SPI digital communication, and an external input bus for controlling external sensors.
Advanced buffering, power management, and synchronization are also provided. The KXG03 strikes an
ideal balance between current consumption and noise performance to ensure excellent bias stability over
temperature. The KXG03 operates at a current of less than 2mA, while the KXG08 utilizes an architecture
that enables the lowest current consumption in the industry (0.6mA high resolution mode, 0.2mA low
Accelerometer
Gyroscope
current mode), making it ideal for power-sensitive applications and always-ON operation.
KXG03/ KXG07 are offered in a 16pin 3×3×0.9mm LGA package, while the KXG08 is available in a 14pin
2.5×3×0.9mm LGA package.
Features
● 1024byte
(KXG03), 4096byte
Applications
● User
(KXG07 and KXG08) FIFO
buffer and auxiliary I2C bus
● SPI
● 16bit
Control UI
● Wearable
● Mobile
Passive Monitoring
temperature sensor
Tech
Phones
● Portable
Devices
● Device
Optimization
Function
(Max.) resolution
accelerometer and
gyroscope outputs
● Internal
● Motion
Management
● Active/
and I2C digital outputs
● Embedded
Interface
● Power
● Tilt
Detection
● Gesture
voltage regulator
Recognition
● Pedometer/
Activity Monitoring
6-Axis Combo Sensors (3-Axis Accelerometer + 3-Axis Gyroscope)
Part No. Axis
KXG03
☆
☆
KXG07
KXG08
Gyroscope
Full-Scale Range
6
+/−2048, +/−1024,
+/−512, +/−256º/Sec
6
+/-2048, +/-1024, +/-512,
+/-256, +/-128, +/-64 º/Sec
6
+/-2048, +/-1024, +/-512,
+/-256, +/-128, +/-64 º/Sec
Accelerometer
Full-Scale
Range
Accelerometer
Sensitivity
Resolution
16384（+/−2g), 8192（+/−4g),
2g, 4g,
8g, 16g 4096（+/−8g), 2048（+/−16g), Counts/G
2g, 4g,
16384 (+/-2g), 8192 (+/-4g),
8g, 16g 4096 (+/-8g), 2048 (+/-16g), Counts/G
2g, 4g,
16384 (+/-2g), 8192 (+/-4g),
8g, 16g 4096 (+/-8g), 2048 (+/-16g), Counts/G
Size, No. of Pins, I/F
Wakeup
Output
Package
3×3×0.9mm,
16pin, LGA
Digital
SPI/I2C
3×3×0.9mm, Digital
16pin, LGA SPI/I2C
2.5×3×0.9mm, Digital
14pin, LGA SPI/I2C
16
16
16
Operating Temperature
Range (°C)
VCC［V］
（Min.）
［°C］ （Max.）
［°C］
Yes
−40
85
1.8 to 3.3
Yes
−40
85
1.8 to 3.3
Yes
−40
85
1.8 to 3.3
☆：Slated for mass production in 2016
6-Axis Combo Sensor
(3-Axis Accelerometer
+ 3-Axis Magnetometer)
Kionix’s 6-axis combo sensors (3-Axis Accelerometer + 3-Axis Magnetometer) are high performance, low power
consumption accelerometers with a built-in magnetometer. These sensors are specifically designed for mobile
applications and feature much lower current consumption than conventional consumer-grade gyroscopes.
Features
● Compact
● Low
3×3×0.9mm LGA package
current consumption in all modes
● Full-scale
Accelerometer
Magnetometer
● Output
data rate: 0.781Hz to 25.6kHz
● Device
16 bit
● Tilt
TM
noise with built-in FlexSet
Detection
Recognition
/
Activity Monitoring
high-pass filter output
● Motion
Tap/Double-TapTM and
optimization
algorithms
device
● High
Monitoring
Optimization Function
● Pedometer
● Integrated
● Excellent
Management
● Gesture
Internal 384byte FIFO buffer
● Digital
Interface
● Active/Passive
performance optimizer
●
● User
● Power
range: ±2g, 4g, 8g, 16g
● Resolution:
● Low
Applications
Control UI
● Wearable
● Mobile
temperature characteristics
Tech
Phones
● Portable
Devices
impact resistance (10,000g)
6-Axis Combo Sensors (3-Axis Accelerometer + 3-Axis Magnetometer)
Part No.
Axis
Accelerometer
G-Range
I/F
Current Magnetometer
(Output)
Range
(μA)
Angular
Velocity
Range
Operating
Size,
Temperature No. of Pins,
(°C)
and Package
☆
KMX62-1031
6
User-selectable
2g, 4g, 8g, 16g
Digital
(I2C)
10 to 395 ±1200μT
☆
KMX62G-1033
6
User-selectable
2g, 4g, 8g, 16g
Digital
(I2C)
2000
3×3×0.9mm,
10 to 395 ±1200μT DPS Max. −40 to ＋85
16pin, LGA
☆：Slated for mass production in 2016
N/A
−40 to ＋85
3×3×0.9mm,
16pin, LGA
TM
*FlexSet
Features
E-compass Solution,
Magnetic field change, Freefall
Communications down to 1.2V
9 Axis Solution with
Magnetic Gyro
and Double-TapTM are trademarks of Kionix.
Sensor Catalog 06
Magnetic Field Sensor
M
Magnetic Field
BM1422GMV is a magnetic field sensor that incorporates a 3-axis MI element and control IC into a
BM
compact package. The MI element features significantly lower current consumption and noise
co
compared with conventional sensors, making it ideal not only for standard E-compass systems, but for
co
applications requiring higher accuracy as well.
ap
MLGA010V020A
2.0×2.0×1.0ｍｍ
Features
● MI-type
3-axis magnetic field sensor
● 12bit/14bit
● I2C
Applications
● Smartphones
digital output
● Tablets
I/F
● Supply
● Wearable
voltage range: 1.7V to 2.0V
Detection for Indoor
Navigation
● Operating current: 150μA (typ.) [at 100Hz]
● Ultra-low-current
Orientation
Detection (E-compass)
● Measurable input magnetic range: ±1200μT
● Magnetic
Devices
● Position
sensitivity: 0.042μT/LSB (typ.)
● Operating temperature range (°C): -40 to +85°C
Block Diagram
MI Element
DVDD
AVDD
VREG
MI Sensor
X-Axis
MUX
DRDY
ADC
Signal
Processing
MI Sensor
Y-Axis
SCL
I2C
Clock
MI Sensor
Z-Axis
SDA
ADDR
GND
Detection Accuracy Comparison
1m
Ultra-low Current Consumption Ideal for
Mobile Devices
Hall
Error: ±1.5 m
Destination
MI
Error: ±0.2 m
*At 100Hz (ROHM study)
4.0
Current Consumption (mA)
Indoor Navigation
Base Station Area
（Bluetooth®）
3.5
3.5mA
2.5
Current consumption
reduced by over 20x
2.0
1.5
1.0
0.5
100m
0.15mA
0
Conventional Product
New Product
MI elements are able to sense up to
100m away within an error of only ±20 cm
*Bluetooth® is a registered trademark of Bluetooth® SIG.
Magnetic Field Sensor IC
07
Part No.
Supply Voltage
(V)
Current
Consumption
(μA)
Magnetic
Sensitivity
(μT/LSB)
Input
Magnetic
Range (μT)
Operating
Temperature
Range (°C)
Package
BM1422GMV
1.7 to 2.0
150
0.042
±1200
−40 to ＋85
MLGA010V020A
Motion Sensing Devices
Pressure Sensor
P
Pressure
ROHM’s pressure sensor is a piezo-resistive type that makes it easy to obtain high-accuracy pressure
RO
Features
● Piezo-resistive
pressure sensor
Applications
● Detectable
pressure range:
300hPa to 1100hPa
●
Smartphones
●
Wearable Devices
●
Activity Trackers
● Built-in
temperature
compensation function
● I2C
I/F
● Compact
Package
VDD
Block Diagram
The built-in
temperature
correction function
provides
high-accuracy
relative pressure
(altitude)
characteristics at
both low and high
temperatures.
Pressure data
OTP
DREG
INT
Pressure
Sensor
ADC
MUX
Temperature
Sensor
Temperature data
Signal
Processing
Built-in temperature
characteristics
correction function
SCL
I2C
SDA
Clock
GND
Pressure Measurement Example
Measurement Data Taken by Moving the Pressure Sensor IC
High-accuracy Over a Wide Range, From Low to High Temperatures
Barometric Error Absolute (hPa)
1000.5
Absolute Pressure (hPa)
CLGA12V025M
（2.5×2.5×1.0mm）
information by utilizing an IC to perform internal temperature correction based on proprietary correction
info
calculation algorithms covering both low and high temperatures. The sensor is designed to detect
ca
differences
in height (altitude) due to pressure changes in wearable devices and activity trackers as well as
diff
pe
perform
advanced detection for indoor navigation in smartphones and tablets.
<Measurement Conditions>
・Indoor
・Room temperature
・High-accuracy mode
1000.4
-100cm
1000.3
0cm
Sensor Position
±20cm(±0.024hPa)
1000.2
20
15
Conventional Product A
10
5
Conventional Product B
0
BM1383GLV
-5
0
20
40
60
80
100
120
-50
130
-25
Time (sec.)
0
25
50
75
Ambient Temperature (°C)
Temperature compensation ensures stable
pressure detection regardless of temperature
Digital Pressure Sensor with Built-in Temperature Correction Function
Part No.
BM1383GLV
Supply
Voltage
(V)
Pressure
Range
(hPa)
1.7 to 3.6 300 to 1100
Average
Relative
Absolute
Operating
Current
Pressure
Pressure
Temperature
Consumption I/F
Accuracy (hPa) Accuracy (hPa)
Range (°C)
(μA)
±0.12
±1
5.0
I2C −40 to ＋85
Package
CLGA12V025M
Sensor Catalog 08
Motion Sensing Devices
Infrared High
Output Laser
Diodes
Infrared high power laser diodes are expected to be adopted in a wide variety of applications, including motion
sensors.These lasers emit high-power infrared radiation and detect infrared rays reflected by an object through a
receiving block, making it possible to detect the motion and position of an object with a high degree of accuracy.
Features
●
High 200mW output, Kink-free via CW drive
●
High-efficiency operation with excellent
temperature characteristics
●
MTTF >40,000hrs at 200mW (60°
C) drive
Applications
●
Motion Sensors
●
3D Distance Sensors
*CW: Continuous wave (unmodulated)
*Kink: Bend after the threshold in the current vs.
optical output characteristics curve
Depth Recognition Method
High-efficiency Operation with
Excellent Temperature Characteristics
Φ5.6mm
TOF (Time of Flight) Method
Pattern Exposure Method
I-L-V Curve
Conventional
Infrared Emission Block
Infrared
Emission
Block
300
Configuration
250
Po
（mW）
25℃
Infrared
Receiving
Block
60℃
200
150
Infrared Receiving Block
85℃
Reference
Length
100
Exposure
Method
50
0
0
Laser Scanning
Emitting Surface Exposure
Reception matches the emission timing
Reception matches the
emission timing
Phase difference between the emitting and
receiving blocks is calculated based on
signal strength
Compare the emission and
receiving patterns
50 100 150 200 250 300 350 400 450
Iop（mA）
Measurement
Method
RLD82xxJ1
300
60℃
Po
（mW）
250
25℃
85℃
Distance is measured from the phase difference
Distance is measured by triangulation
using the angle of projection and
angle of incidence
200
Application Examples
150
100
Detector
Motion
Sensor LD
50
0
0
50 100 150 200 250 300 350 400 450
Iop（mA）
Excellent temperature characteristics
compared with conventional products
Device control is performed
after sensing movement.
Mounting this sensor on a drone enables
remote measurement of 3D distance.
Infrared Lasers
Part No.
☆
Absolute Maximum
Electrical Optical Characteristics (Tc=25°C)
Wavelength Ratings (Tc=25°C)
Condition
Po
λp
Topr
Po
ITH
VR
Vop Im
Iop
θ⊥ θ//
η
Max.
(nm)
(mW)
(mW) (V) (°
C) (mA) (mA) (W/A) (V) (mA) (deg) (deg)
RLD82PZJ1
822
220
2
60
50
255
0.95
2.4
0.30 17.0
9.5
Equivalent Circuit
PD
200
(3)
☆
RLD84PZJ2
842
220
2
60
50
255
0.95
2.4
0.30 17.0
9.5
200
☆
RLD82NZJ1
822
220
2
60
50
255
0.95
2.4
0.30 17.0
9.5
200
842
220
2
60
50
255
0.95
☆：Under development
Safety Precautions
These products are intended for use in general electronic equipment.
Since laser light emitted from laser diodes can cause injury (i.e.
burns), please refrain from looking directly at the light-emitting block
or through a lens or fiber when the product is in operation.
If you intend to use these products in equipment and devices that require an extremely high
level of reliability, and whose malfunction or failure may directly cause loss of human life,
please consult with a ROHM sales representative in advance.
09
2.4
0.30 17.0
9.5
200
LD
(1)
PD
(3)
RLD84NZJ2
(2)
(2)
LD
(1)
Environment Sensors
Environment Sensors
Environment sensors sense physical quantities, such as ambient light and
temperature, and convert them into electrical signals.
For example, sensors are used to detect ambient conditions both inside and
outside of devices in order to optimize operation, contributing to greater
comfort, safety, and energy savings.
Color
ROHM color sensors utilize proprietary technology
Features
and computational methods to achieve industry-leading
IR removal characteristics, reducing the effects of
IR rays by over 10x compared with conventional
products. This makes it possible to accurately
detect the brightness and color temperature even
with dark optical windows (low transmittance) that
cannot be achieved using conventional color
sensors due to the effects of IR rays. The capability
of detecting not only brightness but color temperature
allows for a more natural display output, improving
image quality significantly (i.e. when using a digital
camera).
Applications
Spectral Sensitivity Characteristics Comparison
100
Transmittance(％)
Color Sensor
Not susceptible to infrared rays
●
Wide light detection range:
0.005 to 40k lx
●
High accuracy brightness and
color temperature detection
even with dark optical windows
●
Smartphones
●
Tablets
●
Notebook PCs
●
LCD TVs
●
Digital Cameras
●
Display-equipped Devices
Color Temperature Detection Comparison
Under Dark Optical Windows
Incandescent Lamp: 2800k
G
Fluorescent Lamp: 5000k
Infrared Region
80
R
60
●
B
Conventional Product
Conventional Product
BH1745NUC
BH1745NUC
Matching the ideal
value of 2800K
Matching the ideal
value of 5000K
40
Low noise
20
0
400
500 600 700 800 900 1000 1100
These new products can detect the ideal color
temperature under a variety of lamps
Wavelength(nm)
16bit Serial Output Type Digital Color Sensor IC
Part No.
BH1745NUC
Supply
Voltage
(V)
λp
（nm）
Red Green Blue Clear
2.3 to 3.6 620
540
460
585
Brightness
High
Measurement
IR Cut
Sensitivity
Range (lx)
I/F
Operating
Temperature
Range (°C)
0 to 40,000
I2C
−40 to ＋85 WSON008X2120
㾎
㾎
Package
Sensor Catalog 10
Pulse Sensor IC
Pulse
ROHM’s pulse sensor IC integrates an optical filter ideal for pulse detection on the sensor block. This
significantly reduces the effects of noise, including red and infrared rays, making it possible to acquire
high-quality pulse signals – even outdoors.
ROHM leverages optical sensor technologies cultivated over many years to significantly improve
sensor block sensitivity, enabling support for low-brightness, low VF LEDs and eliminating the need for
external circuits (i.e. boost). As a result, a low-power pulse sensor system is achieved that maximizes
battery life in wearable devices.
Features
● Superior noise removal
characteristics
●
Supports low-VF LEDs
●
Low power consumption
Applications
●
Smartphones
●
Wearable Devices
●
Tablets
●
Smart Watches
WLGA010V28
(2 8×2 8×0 9
)
(2.8×2.8×0.9mm)
Current Consumption Comparison (While Resting)
Pulse Measurement Results (While Resting)
Current Consumption (mA)
220
Heart Rate [bpm]
BH1790 Pulse Sensor System
Electrode-Type Pulse Sensor
160
100
40
3
2
74%
2.9mA
lower current
consumption
1
0.74mA
0
0
30
60
90
120
Conventional
Pulse Sensor System
Time [sec]
BH1790GLC
*Including LED drive current
Hemoglobin
Blood Vessel (Artery)
Photodetector
Green LED
Pulse Sensor
The amount of light absorbed by the
detector will fluctuate depending on
changes in blood vessel volume,
producing a waveform similar to the
one shown in the diagram below.
Signal (V)
■ Optical Pulse Sensor Operating Principle
Pulse
Time (Sec.)
Pulse Sensor IC
☆
Part No.
Analog Supply
Voltage
I/O Supply
Voltage
Red Light
Cut
IR cut
I/F
Operating
Temperature
Range
Package
BH1790GLC
2.5 to 3.6V
1.7 to 3.6V
㾎
㾎
I2C/SPI
−20 to ＋85℃
WLGA010V28
☆：Under development
11
Environment Sensors
Temperature
ROHM temperature sensor ICs integrate a temperature sensing element, constant current circuit, and
high-accuracy reference supply voltage on a single chip. This eliminates the need for troublesome
circuit design and ensures compatibility with a variety of applications requiring temperature detection,
including mobile phones, tablets, PCs, LCD TVs, and gaming systems.
Features
● Detection
temperature range:
−30°C to 100°C
● Supply
（BD1020HFV）
(BDJxxxx Series)
Applications
●
Mobile Phones
●Tablets
voltage range: 2.4V to 5.5
● Compact
●Audio
Package
Systems
●DSCs
●DVCs
●
Linear output temperature sensor
●
Temperature sensitivity: -8.2mV/°C (typ.)
●
High accuracy (±1.5°C at Ta=30°C)
●
Low current consumption (4.0μA typ.)
●
Thermostat with built-in power down function
●
Integrated temperature sensor analog output
●
Low current consumption: 7.5μA (typ.)
Vout Voltage vs Temperature
3.0
Vout Voltage［V］
Temperature
Sensor ICs
2.5
■ Excellent
■ Wide
2.0
linearity
temperature range
1.5
1.0
ー8.2mV/°
Ｃ
0.5
0.0
ｰ40
ｰ20
0
20
40
60
80
100
120
Temperature［°C］
Analog Output Temperature Sensor IC
Temperature Accuracy (˚C)
Part No.
Supply
Voltage
(V)
BD1020HFV
2.4 to 5.5
Ta=30˚C
Ta=-30, 100˚C
±1.5
±2.5
Temperature
Sensitivity
(mV/˚C)
−8.2
Current
Operating
Output Voltage (V)
Consumption Temperature
(Ta=30˚C, VDD=3V)
(μA)
Range (°C)
1.3
4.0
Package
−30 to ＋100 HVSOF5
Low Current Thermostat (Temperature Switch) Output Temperature Sensor ICs
Part No.
Supply
Voltage
(V)
BDJxxx1HFV Series
Detection
Temperature (˚C)
60、70、75、80、85、90
2.4 to 5.5
BDJxxx0HFV Series
Current
Detection
Consumption
Temperature (Operation/Power
Accuracy (˚C)
Down) (μA)
±2.5
55、60、65、70、80
7.5/0.3
Output Type
Type
Active
Open
Drain
H
Operating
Temperature
Range (°C)
Package
−30 to ＋100 HVSOF5
L
Sensor Catalog 12
Ambient Light
Sensor ICs
ROHM ambient light sensor ICs detect brightness
Features
over a wide range, from darkness to direct sunlight,
and output data to adjust the brightness of
LCDs in display-equipped devices. Optimizing the
brightness makes it possible to reduce set power
Applications
ROHM Ambient Light Sensor ICs
Light Source Sensitivity Comparison
Clear Bulb
Silica Bulb C
Silica Bulb B
Achieves uniform
sensitivity regardless of
light source
Silica Bulb A
Fluorescent Lamp (6700K)
Broad lineup includes current
output analog and 16bit serial
digital ambient light sensor ICs
●
Supports a wide variety of
light sources
Wide light detection range
●
consumption and improve display visibility. ROHM
offers a broad lineup of current and digital
output types that support a variety of sets.
Ambient
Light
●
●
Mobile Phones (Smartphones)
●
Tablets
●
Notebook PCs
●
LCD TVs
●
Digital Cameras
●
Display-equipped Devices
Fluorescent Lamp (5000K)
Fluorescent Lamp (2800K)
Light Source Type
0.00
1.00
2.00
3.00
4.00
5.00
ROHM products limit differences in output sensitivity caused
by different light sources to
10%.
Analog Current Output Type Ambient Light Sensor ICs
Part No.
Supply
Voltage
(V)
BH1603FVC
BH1620FVC
BH1680FVC
2.4 to 5.5
2.4 to 5.5
2.4 to 5.5
Output
Brightness
High
Sensitivity Sensitivity Measurement
IR Cut
Sensitivity
Variation (%) Switching Range (lx)
±15
±15
±15
3 stage
3 stage
3 stage
−
−
㾎
0 to 100,000
0 to 100,000
0 to 50,000
−
−
㾎
Output Type
Operating
Temperature
Range (°C)
Package
Current (Source)
Current (Source)
Current (Source)
-40 to +85
-40 to +85
-40 to +85
WSOF6
WSOF5
WSOF5
Digital 16bit Serial Output Type Ambient Light Sensor ICs
Part No.
3-in-1 Proximity
Ambient Light
Sensor
Brightness
Measurement
Range (lx)
Sensitivity
Supply
Voltage (V) Variation (%)
BH1715FVC
BH1721FVC
BH1751FVI
BH1780GLI
2.4
2.4
2.4
2.3
to
to
to
to
3.6
3.6
3.6
3.0
±15
±15
±20
±20
BH1730FVC
2.4 to 3.6
±15
High
Sensitivity
IR Cut
I/F
Operating
Temperature
Range (°C)
−
−
−
−
−
−
㾎
㾎
I2C
I2C
I2C
I2C
−40
−40
−40
−40
㾎
−
I2C
−40 to ＋70
0 to 65,000
0 to 65,000
0 to 65,000
0 to 65,000
0 to 65,000
（1/128 lx step）
ROHM 3-in-1 proximity ambient light sensors
integrate an infrared LED, proximity sensor, and
ambient light sensor into a single package, making
it possible to reduce set power consumption
while improving display visibility.
Features
Applications
to ＋85
to ＋85
to ＋85
to ＋85
Package
WSOF6
WSOF5
WSOF6I
WLGA04IW02
WSOF6
●
Integrated package
●
Digital output (I2C I/F)
●
Smartphones, Tablets
●
Digital Cameras
Proximity Sensor Operating Principle
Optical signals emitted from an infrared LED are reflected by the target
Ambient
Light
Proximity
object and output to a light receiver element.
Reflector
Acrylic Board
Reflected Light
Crosstalk
Primary Mold
Primary Mold
IR LED
Receiver IC
Secondary Mold
Ambient Light/ Proximity Sensor with Built-in Infrared LED
13
Part No.
Supply
Voltage (V)
Sensitivity
Variation (%)
Brightness
Measurement
Range (lx)
High
Sensitivity
IR Cut
I/F
Operating
Temperature
Range (°C)
Package
RPR-0521RS
2.5 to 3.6
±40
0 to 43,000
㾎
−
I2C
−25 to ＋85
SON
Environment Sensors
Ultraviolet
Sensors
LAPIS Semiconductor developed silicon-based
Features
sensor ICs for detecting ultraviolet rays utilizing
proprietary SOI (Silicon on Insulator) technology.
●
Analog voltage output proportional
to UV light intensity
●
Uniform output voltage achieved
through trimming
●
Low operating (300μA typ.) and
standby (0.1μA typ.) currents
●
Compact, low-profile QFN package
(4.0mm×3.7mm×0.73mm)
●
Compact digital output UV sensors
are currently under development
●
Smartphones, Tablets, etc.
●
UV Monitoring for Skin Care,
Aging, etc.
●
Watches and Accessories
●
Sterilization and Washing
Facilitates UV monitoring
Ultraviolet
UV light intensity can be output as Vout. Accordingly,
connecting a circuit for analyzing Vout will make it easy
to measure UV light intensity.
Vout(V)
UV-index
Applications
15
2
10
1
0
0
3
7
10
UV Light Intensity (mW/cm2)
Ultraviolet (UV) Sensor
☆
Maximum
Sensitivity
Wavelength Output Data
(nm)
Supply
Voltage
(V)
Current
Consumption
(μA)
Output
Type
Operating
Temperature
(°C)
Part No.
Overview
ML8511AFC
UV Sensor with
Built-In Amp
365
UV Intensity 2.7 to 3.6
Analog
300 (Operation)
−20 to ＋70 C-TQFN12
0.1 (Power down)
Digital Output
UV Sensor
365
UV-A Intensity,
1.65 to 3.6
UV-B Intensity
Digital,
I2C
500 (Operation)
1.4 (Standby) −30 to +85 WSON8
0.5 (Power Down)
ML8523
Package
☆：Under Development
Infrared Image
Sensor
Infrared
LAPIS Semiconductor’s infrared image sensor is a
simple-to-use medium-resolution (2,000 pixels) sensor
capable of easily obtaining thermal images and
temperature distribution data. A thermopile system is
utilized to achieve greater energy savings without the
need for Peltier cooling. In addition, taking advantage of
semiconductor technology and MEMS micromachining
Features
Applications
results in greater sensitivity and integration, and
combining a general-purpose logic circuit on a single chip
translates to reduced component cost by the customer.
●
2K-pixel infrared image sensor
●
Non-cooling type, compact,
low power consumption
●
Combines MEMS and CMOS
technologies, joint development
with Nissan Motor Co., Ltd.
●
HEMS, BEMS
●
Security and Surveillance
●
Non-contact Temperature Measurement
●
Gaming, Motion Sensing
Infrared (IR) Sensors
Part No.
ML8540
Feature
No. of Pixels
Temperature
Measurement
Output
Accuracy
Range (°C)
Type
(°C)
2K-pixel thermopile-type 47 rows×48 −30 to 300
columns=
IR image sensor package 2256 pixels (Variable)
0.5
Analog
Read
Speed
Supply Temperature
Resolution
Voltage (without Lens) Package
(°C)
(V)
6FPS
4.5 to 5.5 −30 to ＋85 C-QFN24
Sensor Catalog 14
ROHM Ultra-Compact Hall IC Series
ROHM ultra-compact Hall IC series integrates a high-sensitivity Hall element and processing circuitry into a single chip, allowing them to
be used to detect the presence of a magnet (magnetic field) in open/ close switches in panels. This non-contact sensing method prevents
deterioration due to frequent open/ close operation along with malfunctions caused by the introduction of foreign materials.
ROHM offers four categories (Omnipolar, Omnipolar with Polarity Discrimination, Unipolar, and Bipolar Latch Detection) based on the
type of magnetic field detection and detection output, making it possible to select the ideal solution to meet set requirements.
Omnipolar
Detection
Hall ICs
Omnipolar detection hall ICs operate by turning the
output ON (Active Low) upon detection of a
Features
●
Offered in a range of
sensitivity levels
magnetic field, regardless of polarity (S-/N-pole).
●
Multiple packages types
This eliminates the need for magnet management
(i.e. marking), since the magnet used for omnipolar
detection is not limited to a specific polarity. In
●
Models with polarity
discrimination available
●
Tablets
●
Smartphones
Applications
addition, omnipolar detection Hall ICs with polarity
Hall
discrimination are offered that feature two outputs,
one for detecting S-pole and the other for N-pole
magnetic field detection, making it possible to
distinguish the polarity of a magnetic field.
Omnipolar Detection Hall ICs Detects S-/N-pole magnetic fields and turns the output ON (Active Low).
Part No.
Supply
Voltage
(V)
BU52011HFV
1.65 to 3.3
Operating Magnetic Pulse Drive
Current
Flux Density (mT)
Period Consumption
S-pole N-pole
(ms)
(Avg.) (μA)
+3.0
−3.0
50
Output Type
Operating
Temperature
Range (°C)
Package
(mm)
5
CMOS Output
−40 to +85 HVSOF5
VCSP50L1
−40 to +85 （1.1×1.1）
H＝0.5
BU52015GUL
1.65 to 3.3
+3.0
−3.0
50
5
CMOS Output
(2 Outputs:
Active L, H)
BU52061NVX
1.65 to 3.6
+3.3
−3.3
50
4
CMOS Output
−40 to +85 SSON004X1216
BU52055GWZ
1.65 to 3.6
+4.1
−4.1
50
5
CMOS Output
UCSP35L1
−40 to +85 （0.8×0.8）
H=0.35
BU52054GWZ
1.65 to 3.6
+6.3
−6.3
50
5
CMOS Output
UCSP35L1
−40 to +85 （0.8×0.8）
H=0.35
4.5 to 5.5
+3.4
−3.4
−
BD7411G
2.0（mA） CMOS Output
−40 to +85 SSOP5
Omnipolar Detection (Polarity Discrimination Output) Incorporates 2 outputs to discriminate between S-/N-pole.
15
Operating Magnetic Pulse Drive
Current
Flux Density (mT)
Period Consumption
S-pole N-pole
(ms)
(Avg.) (μA)
Part No.
Supply
Voltage
(V)
BU52014HFV
1.65 to 3.3
+3.0
−3.0
50
5
CMOS Output
(S-/N-pole)
−40 to +85 HVSOF5
BU52058GWZ
1.65 to 3.6
+3.0
−3.0
50
5
CMOS Output
(S-/N-pole)
UCSP35L1
−40 to +85 （0.8×0.8）
H=0.35
BU52075GWZ
1.65 to 3.6
+9.5
−9.5
50
5
CMOS Output
(S-/N-pole)
UCSP35L1
−40 to +85 （0.8×0.8）
H=0.35
BU52077GWZ
1.65 to 3.6
+15.0
−15.0
50
5
CMOS Output
(S-/N-pole)
UCSP35L1
−40 to +85 （0.8×0.8）
H=0.35
BU52177GXZ
1.65 to 3.6
+15.0
−15.0
50
5
CMOS Output
(S-/N-pole)
XCSP30L1
−40 to +85 （0.65×0.65）
H=0.33
BU52078GWZ
1.65 to 3.6
+24.0
−24.0
50
5
CMOS Output
(S-/N-pole)
UCSP35L1
−40 to +85 （0.8×0.8）
H=0.35
Output Type
Operating
Temperature
Range (°C)
Package
(mm)
Environment Sensors
Unipolar
Detection
Hall ICs
Unipolar detection Hall ICs detect only either S-pole
Features
or N-pole magnetic fields and turn the output ON
(Active Low). Compared with omnipolar types,
unipolar detection Hall ICs are ideally suited for
Applications
applications susceptible to magnetic noise generated
●
Unipolar detection
●
Low power consumption
●
Tablets
●
Smartphones
by the opposite polarity (to the detection polarity).
Output Type
Operating
Temperature
Range (°C)
3.5
CMOS Output
−40 to +85
HVSOF5
50
3.5
CMOS Output
−40 to +85
SSON004X1216
−3.0
50
3.5
CMOS Output
−40 to +85
HVSOF5
−43.3
50
3.5
CMOS Output
−40 to +85
Supply
Voltage
(V)
BU52012HFV
1.65 to 3.6
+3.0
−
50
BU52012NVX
1.65 to 3.6
+3.0
−
BU52013HFV
1.65 to 3.3
−
BU52069GWZ
1.65 to 3.6
−
Bipolar Hall ICs detect changes in the magnetic
field (i.e when switching from the S-pole to N-pole
and vice versa), ensuring stable detection
regardless of magnetic field strength (resulting in
constant output pulse duty). Bipolar Hall ICs are
ideal for use as an interface between wheel keys
and trackballs for menu selection, etc.
Features
Applications
Low-speed operation
S
B
N
S
UCSP35L1
（0.8×0.8）
H=0.35
●
High-speed detection
●
2 built-in sensors (BU52742GUL)
●
Wheel Keys
●
Trackballs
High-speed operation
N
SNSNSNSNSNSNSNS
Hall IC
With BU52040HFV
Without BU52742GUL
Over 500μS
Package
(mm)
B
Hall IC
With BU52040HFV
Without BU52742GUL
500μS and Under
t
t
BU52040
HFV
BU52742
GUL
V
BU52040
HFV
t
2 outputs with 2 built-in sensors
OUT1 OUT2
V
BU52742
GUL
t
Lowspeed
detection
only
t
OUT
V
2 outputs with 2 built-in sensors
V
OUT1
OUT2
OUT1,OUT2
Hall
Operating Magnetic Pulse Drive
Current
Flux Density (mT)
Period Consumption
S-pole N-pole
(ms)
(Avg.) (μA)
Part No.
OUT
Bipolar Latch
Hall ICs
Unipolar Detection Hall ICs Detects either N- or S-pole
OUT1,OUT2
Hall
t
Supports
high-speed
detection
Bipolar Hall ICs Detects changes in polarity (Switching from N-pole to S-pole: Output High to Low, S-pole to N-pole: Output Low to High)
Operating Magnetic PulseDrive
Current Number
Frequency
Flux Density (mT)
of
Period
Consumption
(kHz)
(ms)
(Avg.) (μA) Sensor
S-pole N-pole
Part No.
Supply
Voltage
(V)
BU52040HFV
1.65 to 3.3
+3.0
−3.0
0.5
−
200
1
CMOS −40 to +85 HVSOF5
Output
BU52742GUL
2.4 to 3.6
+10
−10
−
250
7.5
（mA）
2
VCSP50L1
CMOS
−25 to +85 （6pin）
Output
（1.0×1.5）
H＝0.5
Output
Type
Operating
Temperature
Range (°C)
Package
(mm)
Sensor Catalog 16
Transmission
Type
Photointerrupter
Selection
Transmission type photointerrupters are optical
Features
switches designed with light emitter and receiver
elements arranged facing each other that detects the
presence of an object by the blocking of the light
●
Offered in a wide range of package
sizes, from small to large
●
Expanding lineup includes
energy-saving types
●
Printers
●
Office Equipment
●
Motor Position Detection
when the object passes between them. Unlike
Applications
mechanical switches, this contactless design
eliminates wear and tear, providing a greater
degree of reliability.
Lineup
Gap
1.2mm
2.0mm
RPI-222
3.0mm
4.0mm
RPI-246
Photointerrupters
0.2mm
Slits
0.8mm
Gap
0.25mm
Slit
RPI-122
0.3mm
RPI-125
RPI-0226
RPI-0352E
Surface-mount
Surface-mount
RPI-221
RPI-352
RPI-243
RPI-352E
RPI-0125
0.4mm
RPI-121
RPI-441C1
0.5mm
RPI-441C1E
Linear Phototransistor Output
Standard Characteristics
Package
Part No.
Gap Width (mm)
Slit Width (mm)
IC（mA）
VCE
（V）
I（mA）
F
tr, tf
（μs）
Ultra-Compact Surface Mount Type
RPI-0125
1.2
0.3
0.45 Min.
4.95 Max.
5.0
20
10
Compact Surface Mount Type
RPI-0226
2.0
0.3
0.1 Min.
5.0
5
50
RPI-122
0.8
0.25
0.18 Min.
1.08 Max.
0.7
3
10
RPI-121
0.8
0.4
0.7 Min.
5.0
20
10
RPI-125
1.2
0.3
0.45 Min.
4.95 Max.
5.0
20
10
RPI-221
2.3
0.4
0.2 Min.
5.0
20
10
0.18 Min.
0.95 Max.
5.0
10
10
Ultra-Compact Type
RPI-222
2.0
0.2
RPI-243
2.0
0.4
0.5 Min.
5.0
20
10
5.0
20
10
Compact Type
Energy Saving Type
17
RPI-246
2.0
0.2
0.35 Min.
1.2 Max.
RPI-352
3.0
0.4
0.2 Min.
5.0
20
10
RPI-441C1
4.0
0.5
0.2 Min.
5.0
20
10
RPI-0352E
3.0
0.4
0.18 Min.
5.0
10
10
RPI-352E
3.0
0.4
0.2 Min.
5.0
10
10
RPI-441C1E
4.0
0.5
0.2 Min.
5.0
10
10
Environment Sensors
Infrared
LEDs
Infrared LEDs are adopted in a variety of sets to
support optical communication and remote
Features
Parabolic structure ensures
high output
●
control transmission.
ROHM offers a range of packages, from lamp
types to surface mount units, enabling selection
of the ideal solution based on set requirements.
Applications
●
Expanded package lineup
●
Infrared Communication Equipment
●
Optical Sensor Transmission
Infrared LEDs
Package
SIR-34ST3F
Part No.
SIR-34ST3F
φ3 resin
SIR-341ST3F
SIR-56ST3F
φ5 resin
SIR-563ST3F
SIR-568ST3F
Side View
Resin Type
Surface MountType
(Top View)
Phototransistors
Absolute
Maximum Ratings
Features
Standard Characteristics
IE
tr, tf
λP
VF
IF
θ1/2
（nm） （μs） （deg）
（mA） （mW/sr） I（mA）
（V） I（mA）
F
F
Optimized for Remote Control
100
10.5
50
1.3
100
950
1
27
Compact, high power
75
18.1
50
1.3
50
940
1
16
Optimized for Remote Control
100
15.0
50
1.3
100
950
1
15
100
21.0
50
1.34
50
940
1
15
High Output Ideal for
Remote Controls
High Speed LEDs for
Optical Communication
100
38.0
50
1.6
50
850
fc＝50MHz
13
SIM-20ST
General-Purpose Molded Type
50
7.5
50
1.3
50
950
1
15
SIM-22ST
General-Purpose Molded Type
50
0.8
10
1.3
50
950
1
30
SIM-030ST
Low Profile (0.9mm) Ideal
for Proximity Sensors
100
25.0
100
1.7
100
870
0.1
20
SIM-040ST
High Power Optimized for
Proximity Sensors
100
40.0
100
1.7
100
870
0.1
20
Phototransistors, which feature spectral sensitivity
in the infrared region, are offered in both lamp and
side view configurations.
Features
●
Available in lamp and side view
configurations
Applications
●
Optical Communication Equipment
●
Light Sensor Reception
Phototransistors
Package
RPT-38PB3F
φ3 resin
Side View
Resin Type
Photodiodes
Absolute
Standard Characteristics
Visible Maximum Ratings
Light
tr, tf θ1/2
IC
λP
VCEO Pc Max. ICEO Max.
Filter （V） （mW）（μA）
VCE
（V）（mA）（nm） （μs）（deg）
Part No.
Features
RPT-34PB3F
Visible Light Filter
㾎
32
150
0.5
10
2.0 Min. 800
10
36
RPT-37PB3F
Visible light filter,
Polarity discrimination
㾎
32
150
0.5
10
2.0 Min. 800
10
36
RPT-38PB3F
Visible Light Filter
㾎
32
150
0.5
10
2.0 Min. 800
10
36
RPM-20PB
Visible Light Filter
㾎
32
100
0.5
10
0.5 Min. 800
10
14
RPM-22PB
Visible light filter,
Wide viewing angle
㾎
32
100
0.5
10
0.48 Min. 800
10
32
Photodiodes feature spectral sensitivity in the
infrared region and are available in surface
mount packages.
Features
●
High responsiveness ideal for
high-speed communication
Applications
●
Optical Communication Equipment
●
Light Sensor Reception
Photodiodes
Package
Surface Mount Type
(Top View)
Part No.
Features
RPMD-0100 Thin, compact
Visible
Light
Filter
㾎
Absolute
Maximum Ratings
VR
（V）
60
Standard Characteristics
PD Max. Photocurrent Dark Current
λP
（mW） （µA） （nA） （nm）
30
8
6 Max.
940
tr, tf
θ1/2
（ns） （deg）
100
60
RPMD-0100
Sensor Catalog 18
Interface
Interface
Interfaces are devices used to control sensor operation (not the sensor
element itself) and for amplifying, analyzing, and processing output signals
from the sensor. They help maximize sensor performance and make it easy
to achieve new functions and uses.
Capacitive
Switch Sensor
ICs
ROHM capacitive switch ICs utilize a original capacitance detection circuit to achieve both high noise
tolerance and high sensitivity. Stable detection of minimal changes in capacitance allows for reliable
sensing of finger contact, even when using thicker cover and protective films.
Features
Applications
●
High sensitivity with high noise immunity
●
●
Integrated LED dimming, press and
hold, and auto calibration functions
Printers, TVs, Audio Players,
and Other Consumer Devices
●
●
Built-in noise/offset/temperature drift
cancellation control functions
Home Appliances/Equipment
(i.e. Refrigerators, AC, Air Purifiers)
●
Office Automation
●
Supports matrix configuration
Capacitive
Switch
Passed Stringent Noise Testing
High Sensitivity Provides Greater Design Flexibility
High-sensitivity detection enabled without being affected by noise
Class-leading noise immunity
Overlay Thickness
Passed
IEC61000-4-6 equivalent
Simplifies noise
counermeasures
Criteria: No malfunctions
Function
Generator
Sine Wave
0.1-2MHz (1kHz steps)
2-80MHz (10kHz steps)
Amplitude: 20V (±10V)
Capacitive
Touch
Controller
Electrodes
Noise Immunity
BU21079F
Overlay Thickness (Acrylic Plate)
ROHM
ROHM
±10V
15mm
ROHM survey
Block Diagram
Enhanced design flexibility
supports curved surface
(i.e. switches)
High
Sensitivity
ROHM survey
VDD
AVDD
LDO28
VREF
LDO15
DVDD
(Sensor）
BU21170: 5ch
BU21072: 10ch
BU21078: 12ch
BU21077, 79: 8ch
POR
Single power
supply
operation
Touch!
OSC
LOGIC
Sensor
AFE
AFE_CNT
AFE_CNT
A/D
C/V
Converter
SIN0-9
Electrode(PCB)
WDTR
MPU
PRDR
SDA
WRAM
HOST
I/F
SCL
AFE
LEDDRY
SIN0-5
PWM-CNT
TEST
DTG
INT
VSS
(LED）
BU21170: 5ch
BU21072: 6ch
BU21078: 8ch
BU21077, 79: −
Capacitive Switch Controller ICs
19
Part No.
Supply
Voltage
(V)
BU21170MUV
3.0 to 5.5
5ch
BU21072MUV
3.0 to 5.5 10ch
6ch
BU21078MUV
3.0 to 5.5 12ch
BU21078FV
3.0 to 5.5 12ch
BU21079F
3.0 to 5.5
BU21077MUV
2.7 to 5.5
LED LED_PWM
Capacitive
Switch Drive Pin Control
Matrix
Control
I/F
㾎
−
㾎
4×4
8ch
㾎
8ch
8ch
8ch
5ch
MCU
Program
Memory
Intermittent
Operation
I2C
32bit
ROM
−
VQFN020V4040
I2C
32bit
ROM
−
VQFN024V4040
6×6
I2C
32bit
ROM
−
VQFN028V5050
㾎
6×6
I2C
32bit
ROM
−
SSOP-B28
−
−
4×4
I2C
32bit
ROM
㾎
SOP16
−
−
Customizable settings
I2C
32bit
RAM
㾎
VQFN020V4040
Package
Interface
Resistive
Touchscreen
Controller ICs
ROHM offers resistive touchscreen controller ICs ideal for mobile equipment, printers, home electronics, car navigation systems, and
more. Adopting these controllers in existing 4-wire resistive touchscreen systems enables 2-point detection and gesture recognition.
Features
4-wire resistive touchscreen
controller IC lineup includes both
1-point and 2-point types
Applications
●
●
Digital cameras,
printers, copiers,
electronic dictionaries,
sumer
and other consumer
equipment
●
Automotive systems
stems
avigation
including car navigation
lays
and audio displays
2-point detection models are offered
with and without a built-in CPU
●
Touchscreen
● In addition to consumer devices such as
portables and printers, high-reliability products
are available for the automotive market
2-Point Touch Enabled in Existing Panels
Conventional System
ROHM’s 2-Point Touchscreen
n Controller System
Menu operation
with button input
(1-point)
ROHM ICs provide intuitive
operation with gesture
input (2-point)
XY resolution:
1024×1024
■Block Diagram
Vcc
BU21023MUV
Work
memory
XL
XR
YU
YD
EEPROM
I/F
ECL
EDA
Program
memory
PSEL
Reads two touch
coordinates and
gesture detection
results through
the serial interface
Filter
YUM
YDM
CLK_EXT
Generates1.8V for
internal use
Enables 3V single power
supply operation
Clock
generator
Osc
Register
Filter
SDA_SIO
SCL_SCK
SEL_CSB
IFSEL
INT
Host
I/F
Regulator
Host
MCU
T4
T3
T2
T1
VSS
DVDD
T5
AVDD
In existing 4-wire analog resistive touchscreens,
voltage in the X direction is measured by supplying
voltage in the Y direction and vice versa. These values
are then used to determine the the X/Y touch
coordinates on the panel.
CPU
(8bit)
VDD
Touchscreen
ADC
(10bit)
Panel
I/F
XLM
XRM
V
RSTB
Simply connect to
conventional 4-wire analog
resistive touchscreens
DVDD_EXT
0V
PVDD
Existing controllers
only feature 1-point
detection
Ultra-low standby current mode possible
from an external digital power supply
Resistive Type
BU21021GUL
Operating
Touch Standby Operating
Current Current Host I/F Temperature
Package
Detection
(μA)
Range (°C)
(mA)
2-point/
60
4.0
I2C/SPI −20 to ＋85 VCSP50L2
2.7 to 3.6 32bit 4096×4096 1-point
BU21029GUL
1.65 to 3.6
−
4096×4096
BU21029MUV
1.65 to 3.6
−
4096×4096
Suppl
MCU
Voltage (V)
Part No.
Human
Presence
Sensor IC
Resolution
BU21028FV-M
2.7 to 3.6
−
4096×4096
BU21024FV-M
2.7 to 3.6
8bit
1024×1024
BU21023GUL
2.7 to 3.6
8bit
1024×1024
BU21023MUV
2.7 to 3.6
8bit
1024×1024
2-point/
1-point
2-point/
1-point
2-point/
1-point
2-point/
1-point
2-point/
1-point
2-point/
1-point
BU21025GUL
1.65 to 3.6
−
4096×4096
1-point
0.8
I2C
−20 to ＋85 VCSP50L2
100
0.8
I2C
−20 to ＋85 VQFN020V4040
2
IC
100
0.8
60
4.0
I2C/SPI −40 to ＋85 SSOP-B28
60
4.0
I2C/SPI −20 to ＋85 VCSP50L2
60
4.0
I2C/SPI −20 to ＋85 VQFN028V5050
0.8
0.12
I2C
−40 to ＋85 SSOP-B20
−30 to ＋85 VCSP50L2
ROHM’s human presence sensor IC is a pyroelectric infrared sensor amplifier equipped with a detection function, high-sensitivity amp for amplifying small
input signals, and constant voltage source that supplies stable voltage to the sensor. Integrating multiple optimized functions into a single chip saves space
along with standby power. In addition, the sensitivity can be customized by simply changing the circuit constants to meet application requirements.
Features
●
Built-in small-signal amp
● Integrated sensor signal output comparator
● Internal
Presence
Detection
100
Applications
Simplifies
complicated
sensor settings
Stable power supply minimizes the effects of noise
Pyroelectric Sensor
Regulator
voltage regulator
High-sensitivity
opamp capable
of accurately
detecting ultra–
small signals
Lighting Switches
● Security Systems
● TVs, PC Displays
●
Digital
Output
High-Sensitivity Amp
AMP.
Easily adjust the
gain and filter
characteristics by
simply changing the
circuit constants
COMP.
Analog
Output
Pyroelectric Infrared Sensor Amp
SSOP-B14
SSOP
SSOP-B
B14
Part No.
Supply
Voltage
(V)
DRAIN
Voltage
(V)
AMP1/AMP2 Gain
(dB)
Output Type
Package
BD9251FV
2.97 to 6.00
2.3
46 Max.
Analog/CMOS Output
SSOP-B14
Sensor Catalog 20
Wireless Communication
Wireless Communication
These days, many devices around us are linked to other devices in a variety of
ways, and this situation is only expected to expand in the future to meet the
needs for lower costs, greater energy savings, and increased convenience.
In response, ROHM offers a wide variety of wireless communication
solutions, including modules that integrate proprietary ICs, covering a broad
range of frequencies from sub-GHz to 2.4GHz.
Smart Sensing & Smart Wireless
Smart Wireless and Network Sensor Solutions from ROHM
Acceleration
Gyro
Geomagnetism
Pressure
Color
Pulse
Temperature
Ambient Light
Ultraviolet
Infrared
Hall
Capacitive
Switch
Touchscreen
Human
Presence
Terahertz
CIGS
Proximity
Sensing
MCU
Low Power MCU
Wireless
Module
Cloud
21
*ZigBee® is a registered trademark of ZigBee® Alliance.
*EnOcean® is a registered trademark of EnOcean® GmbH.
Wireless Communication
Specified Low
Power Radio
(Sub-GHz Band)
LAPIS Semiconductor’s specified low power radio
Features
ICs are used in a wide range of applications, from
telemetry and fire alarms to home security and
industrial remote controllers.
In addition, the ICs have been adopted in Smart
Meters, which have seen increased proliferation in
recent years. The broad lineup also includes models
that support overseas specifications, and each IC
WQFN32
●
IEEE compliance supports
interconnection
●
2-diversity compatibility ensures stable
reception (ML7396x, ML7406, ML7345)
●
Address filter reduces device
power consumption
●
Telemetry
undergoes strict quality control, allowing customers
●
Fire Alarms
to develop products for receiving and transmission
that comply with all relevant laws and regulations.
●
Home Security
●
Industrial Remote Controllers
Applications
Specified Low Power Radio ICs (Transceiver ICs)
Part No.
Compliant Operating Supply Modulation
Frequency Voltage
Standards
Method
Band
(V)
FEC
Mode
ML7066
ARIB STD426MHz band
2-level
T67、RCR
2.1 to 3.6
FSK
STD-30 429MHz band
−
ML7396B
ARIB STDT108
ML7396A
ML7396E
Control Communication Transmission Reception Operating
Temperature Package
I/F
Rate
Output Sensitivity
(°C)
Synchronous serial 1.2kbps、2.4kbps
1mW/ −116dBm
(Control) 4.8kbps［NRZ］
−25 to ＋65 VQFN48
10mW ［BER<1%］＊
DIO（DATA） (3-stage setting function)
Synchronous to 50kbps
2-level
IEEE
100kbps 1mW/ −106dBm
serial
FCC part15.
750 to 960MHz 1.8 to 3.6 （G）FSK 802.15.4g (Control/Data) 150kbps 10mW/ ［100kbps −40 to ＋85 WQFN40
247/249
＊
（G）MSK
DIO（DATA） 200kbps 20mW BER＝0.1%］
EN300400kbps
220
ARIB STD1.8 to 3.6 2-level
T67、RCR
STD-30 160 to 510MHz
（G）FSK
3.3 to 3.6（G）MSK
Q/GDW
(100mW)
347.3
−
1mW/
Synchronous
10mW/ −117dBm
serial
20mW ［4.8kbps −40 to ＋85 WQFN32
(Control) to 15kbps
＊
20mW/ BER＝0.1%］
DIO（DATA）
100mW
ML7406
2-level
EN300-220
750 to 960MHz 1.8 to 3.6 （G）FSK
EN13757-4
（G）MSK
−
1mW/ −106dBm
Synchronous serial
(Control) to 500kbps 10mW/ ［100kbps −40 to ＋85 WQFN32
20mW BER=0.1%］＊
DIO（DATA）
ML7345
EN300-220
2-level
EN13757-4
（G）FSK
ARIB STD-T67 160 to 960MHz 1.8 to 3.6（G）MSK
ARIB STD-T108
4-level
RCR STD-30
（G）FSK
−
Synchronous
1mW/ −123dBm
serial
(Control) to 100kbps 10mW/ ［2.4kbps＊ −40 to ＋85 WQFN32
20mW BER=1%］
DIO（DATA）
−
Synchronous
−123dBm
serial
20mW/
(Control) to 100kbps 100mW ［2.4kbps＊ −40 to ＋85 WQFN32
BER=1%］
DIO（DATA）
ML7344J
ML7344C
ML7345C
2-level
（G）FSK
2.2
to
3.6
Q/GDW347.3 470 to 510MHz
（G）MSK
（100mW） 4-level
（G）FSK
*：BER stands for Bit Error Rate.
Specified Low
Power Radio
Modules
Among the 920MHz-band communication protocols,
international wireless standard Wi-SUN (Wireless
Smart Utility Network) has attracted the most attention
in recent years as a low-power long-range standad
for smart communities (i.e. Smart meters, Transport
infrastructure) as well as the M2M, and IoT markets.
Features
Applications
●
920MHz band specified low
power radio module
●
Class-leading receiving sensitivity
●
Built-in antenna eliminates the
need for high frequency designs
●
Pre-adjusted transmission power
●
MAC address included
●
Japanese Radio Act certified
●
HEMS/BEMS/CEMS
●
IoT/M2M
●
Sensor Networks
*ROHM study
Specified Low Power Radio Modules
BP35A1
Part No.
Supply
Voltag
(V)
Operating
Host CPU
Temperature
I/F
(°C)
Compliant
Standards
Onboard
System IC
Dimensions
(mm)
Package
BP3596A
ML7396B
2.7 to 3.6V
Connector mounting type:
−30 to ＋80 SPI/DIO IEEE802.15.4g (LAPIS Semiconductor Co., Ltd.) 22.0×34.7×3.5
(Single power supply)
20pin, 0.4mm pitch
BP35A1
2.7 to 3.6V
−20 to ＋80
(Single power supply)
UART
Wi-SUN
ML7396B
Connector mounting type:
(LAPIS Semiconductor Co., Ltd.) 22.0×33.5×4.0
20pin, 0.5mm pitch
Sensor Catalog 22
Wireless Communication
Bluetooth®
Smart Modules
LAPIS Semiconductor’s Bluetooth® Smart modules
are designed to be easier to use than conventional
Features
●
Supports Bluetooth® Low Energy single mode
Bluetooth® Core Spec v4.0 compliant
(MK71050-03)
●
ICs. All peripheral components required for operation
are incorporated, along with an antenna, while
maintaining ultra-low power consumption. In addition,
the modules have been certified not only under
Low current consumption ideal for coin/button
batteries: 9mA during transmission/reception
(MK71050-03)
●
●
Japan’s Radio Act, but by the FCC (US) and CE (EU)
Built-in LAPIS Semiconductor IC
Wireless transmission characteristics
pre-adjusted before shipment
●
®
as well. Bluetooth SIG End Product Certification has
also been obtained, making it possible to develop
embedded Bluetooth® Smart devices.
Radio Act/FCC/CE certified with integrated
antenna (MK71050-03)
●
Bluetooth® Smart Modules (LAPIS Semiconductor)
MK71050-03
Supply Operating
Voltage Temperature
(V)
(°C)
Part No.
Host/IF
Compliant
Standards
Operating Transmission Reception
External
Dimensions Package Frequency
Output
Sensitivity
Band
(mm)
®
MK71050-03
☆
MK71251-01
Synchronous Bluetooth
10.7×13.6×
Serial or Core Spec v4.0
1.78
（Single mode）
UART
Synchronous Bluetooth®
8.0×11.0×
2.2 to 3.6 −20 to ＋70 Serial or Core Spec v4.1
1.78
（Single mode）
UART
1.8 to 3.6 −20 to ＋70
SMT
2.4GHz 0/−6/−12/
−86dBm
ISM Band −18dBm
Bluetooth® Certification,
Japan’s Radio Act,
FCC, CE Mark
SMT
2.4GHz 0/−6/−12/
−85dBm
ISM Band −18dBm
Bluetooth® Certification,
Japan’s Radio Act,
FCC, CE Mark
*Bluetooth® is a registered trademark of Bluetooth® SIG.
☆：Under Development
Wireless
LAN Modules
Notes
ROHM’s lineup of wireless LAN modules incorporate
all necessary authentication and encryption
(supplicant and WPS) protocols. Models with built-in
TCP/IP protocol stack are also offered, allowing the
modules to handle all network processing.
Features
● IEEE802.11b/g/n compatible wireless
LAN modules
●
Integrates ROHM’s original baseband IC
Transmission power pre-adjusted
before shipment
●
Applications
●
Japan Radio Act certified
●
Consumer Electronics
●
Industrial Equipment
Wireless LAN Modules
BP3591
Part No.
Supply
Voltage
(V)
Operating
Temperature
(°C)
Host
CPU I/F
Compliant Standards/
Module Specifications
Onboard
System IC
Dimensions
(mm)
Package*
Surface Mount Type
BU1805GU 17.0×17.0×2.3 End face through-hole
1.27mm pitch, 48pin
BP3580
3.1 to 3.5
USB/SDIO/
IEEE802.11b/g/n
(Single power −40 to ＋85
UART ・
supply)
BP3591
3.1 to 3.5
Connector
・IEEE802.11b/g/n
(Single power −40 to ＋85 USB/SDIO/ ・BP3580 and chip antenna
Mount Type
BU1805GU 24.0×33.1×4.7
UART
supply)
0.5mm pitch, 34pin
integrated into a single module
BP3599
・IEEE802.11b/g/n
3.1 to 3.5
USB/SDIO/
BP3591 includes Flash memory
(Single power −40 to ＋85
UART ・
supply)
・Pre-loaded firmware
BU1805GU 24.0×33.1×4.7
Connector
Mount Type
0.5mm pitch, 34pin
BP3595
3.1 to 3.5
USB/SDIO/ ・IEEE802.11b/g/n
(Single power −40 to ＋85
UART ・Compact version of the BP3591
supply)
BU1805GU 15.3×27.6×2.6
Connector
Mount Type
0.4mm pitch, 30pin
*All packages are proprietary ROHM designs
23
Sensor Control
Sensor Control
ROHM Group’s integrated sensor control technology.
Sensor Hub
Low Power
MCUs
LAPIS Semiconductor sensor hub
MCUs include interfaces for connecting
●
Provides integrated control of multiple sensors mounted in smartphones
●
Select between 8bit/32bit CPU core to meet application needs
to sensors as well as the main chipset,
enabling integrated low-power control
●
Power consumption in Halt mode reduced to below 0.6μA (ML610790 family)
●
Operating frequency expanded up to 32MHz (ML630790 family)
of multiple sensors. These MCUs make
it possible to separate the continuously
● Built-in 64kb/128kb Flash ROM supports on-board writing
Applications
●
Smartphones
●
Tablets
●
Sensor Network Modules
The sensor hub MCU controls continuously operating sensors.
This reduces host CPU load, prolonging battery life.
Conventional System Configuration
Continuous Operation
LAPIS Semiconductor’
s System Configuration
Independent sensor control without driving the host CPU
Standby
Acceler- Pressure
ometer Sensor
GPS
(RF+BB)
Gyroscope Ambient
Light Sensor
Host
MCU
Touchpanel
Controller
Magnet- Proximity
ometer Sensor
Temperature
Sensor
Hall
IC
GPS
(RF+BB)
Infrared X-ray
Sensor Sensor
System current
Reduces system
current without driving
the host side
●
●
Control
Sensor
Hub
Low Power
MCU
Continuous Operation
Acceler- Pressure
ometer Sensor
Gyroscope Ambient
Light Sensor
Magnet- Proximity
ometer Sensor
Temperature
Sensor
Data logging ● Pedometer applications
Pre-calculation for sensor applications
Hall
IC
Humidity Ultraviolet
Sensor
Sensor
Infrared X-ray
Sensor Sensor
System current
Current
Sensor access
Host
MCU
Touchpanel
Controller
Humidity Ultraviolet
Sensor Sensor
Current
operating sensors used in smartphones
and wearable devices from the host
MCU, reducing host MCU load while
prolonging battery life vs conventional
solutions. And in order to reduce
system power consumption even
further, users can select between the
ML610790 family, equipped with
LAPIS Semiconductor’s original U8
core MCU, or the ML630790 family
with integrated ARM® Cortex®-M0,
based on application requirements.
Features
Sensor access
Host MCU standby mode
Host CPU operation
Time
Time
Decreasing the operating frequency of the host MCU reduces system power consumption
Standard 8bit Low Power MCUs with Built-In U8 Core [8bit ML610790 Family]
Part No.
Operating Conditions
Functions/Features
ROM/RAM
Serial Port
Operating Operating Frequency (Max.) Current Operating ROM RAM
External
ADC
Tempera8bit
Low
High
I2C/SPI
Voltage
speed speed Consumption ture Capacity Capacity Port Timer PWM WDT (Method) I2C SSIO UART (for Host Interrupt
(V)
clock clock (Typ.@HALT) (°C) (Bytes) (Bytes)
Communication) Source
VDD: 32.768
−30
6
12bit
1.7 to 1.9 kHz 4.096
64k 4k 21（16bit − 1 ×3 1 1 2
ML610Q793
0.6µA to
AVDD: (External MHz
(Flash)
(SA
＋85
×3）
2.5 to 3.6 input)
type)
1
32.768
−30
6
12bit
kHz 4.096
64k
(Crystal MHz 1.1µA to (Flash) 4k 21（16bit − 1 ×2 1 1 2
(SA
＋85
×3）
oscillation)
type)
1
ML610Q794G
2.5
to
3.6
Others
Package
16bit multiplication,
Division, Product-sum S-UFLGA
operation,
Root operation, 48-3.06×
16
2.96-0.40
Host interface
(SPI/I2C/Logging （WCSP48）
RAM: 8kb)
16bit multiplication,
Division, Product-sum TQFP-48operation, Root operation,
16
P-0707Host interface
0.50
(SPI/I2C/Logging
RAM: 8kb)
ARM® Cortex®-M0 Based Standard Type 32bit Low power MCU [32bit ML630790 Family]
Part No.
ML630Q791
Operating Conditions
Functions/Features
ROM/RAM
Serial Port
Operating Operating Frequency (Max.) Current Operating ROM RAM
External
ADC
8bit
I2C/SPI Interrupt
Voltage Low High Consumption TemperaCapacity
Capacity
Port
PWM
WDT
2
ture
speed speed
I C SSIO UART (for Host
(Method)
Timer
(V)
clock clock (Typ.@HALT) (°C) (Bytes) (Bytes)
Communication) Source
1.7
to
1.9
32.768
−40
8
kHz 32MHz 2.5µA to 128k 16k 7 （16bit 1 1
(External
＋85 (Flash)
×4）
input)
− 2 − 1
1
7
Others
Package
Root operation,
Multiplication/division
operation, Host interface WCSP
(with built-in 512Byte
communication register)
*ARM® and Cortex® are registered trademarks of ARM
Sensor Catalog 24
Open Platform Example
Open Platform Example
Wearable
Key Device
ROHM’s wearable key device features an ultra-compact design equipped with multiple sensing
technologies that provide a range of functions, from high-performance activity tracking that takes into
account going up/down stairs, easy UV monitoring, and lock/unlock operation through gesture control
to metal detection and distance measurement (i.e. to buildings).
Features
Key shape designed to be easily
wearable in a pocket on a key ring
or around the neck on a lanyard
● Low power consumption
●
Applications
● Activity
● UV
Monitoring・Life Logging
Monitors
● Gesture
● Metal
Control
Detection
● Distance
Board Layout
Measurement
Accelerometer
KX022
Magnetometer
3-in-1 Proximity Ambient Light Sensor
BM1422GMV
RPR-0521RS
Color Sensor
Sensor Hub Low Power MCU
BH1745NUC
ML630Q790
Pressure Sensor
Gyroscope
BM1383GLV
Ultraviolet Sensor
ML8511
Bluetooth®
Smart Module
Functions
Activity Monitor
25
Gesture Control
Distance Measurement
UV Monitor
Metal Detection
Open Platform Example
The ROHM Group offers evaluation kits and tools that support
application and software development.
ROHM
Sensor Medal
ROHM’s sensor medal is a wearable device that utilizes proprietary human sensing technology.
Multiple sensors instantaneously sense the wearer’s movement, activities, and location, and can
communicate with information terminals.
Features
●
Ideal for initial development using multiple sensors
●
●
Applications
●
Wearable Devices
Provides distinctive sensor applications
●
High-performance Smart Watches
Low power consumption
●
Machine Health Monitoring Devices
Functions
Board Layout
Magnetometer
Pressure Sensor
Acceleration
BM1422GMV
BM1383GLV
Gyro
Sensor
Logger
Activity
Monitor
Muscular
Strength
Measurement
Electronic
Compass
Magnetic Field Pressure
Bluetooth®
Smart
Module
ROHM Sensor
Evaluation Kits
Low
Power
MCU
Low Power
Microcontroller
ML620Q504
Bluetooth®
Smart Modules
Accelerometer
KX022-1020
MK71050-03
ROHM sensor evaluation kits integrate a variety of ROHM Group sensors. The included sensor expansion
boards are compatible with Arduino Uno. Support materials such as manuals and app notes, along with
development software, can be downloaded from a dedicated website to facilitate development of modules
using sensors and wireless ICs.
Features
●
Broad sensor lineup
Applications
Sensor expansion board compatible
with Arduino Uno and Lazurite
● Sensor Evaluation and Initial Set Development
● Internet of Things (IoT)
●
● Electronic Circuits and Training Materials
Supporting materials, including documents
and development software, are available online
●
Broad range of sensor kits
Sensor
Accelerometer
Pressure Sensor
Magnetometer
Gyroscope
10-Axis Motion Module
Ambient Light Proximity Sensor
Color Sensor
Hall IC
Temperature Sensor
Ultraviolet Sensor
Type Name
KX022-1020
BM1383GLV
BM1422GMV
KXG03
KX022/ BM1383/ BM1422/ KXG03
RPR-0521RS
BH1745NUC
BD7411G
BD1020HFV
ML8511A
ROHM
Sensor Shield
Application Example Using
an Arduino Uno Board
Board
Sensor Evaluation
Application
Accelerometer
KX022-1020
Arduino is a registered trademark of
Arduino LCC and Arduino SRL.
Sensor Catalog 26
Research and Development
R&D
ROHM is focused on the development of new
technologies with an eye towards the next
generation, for example by offering breakthrough
products and implementing R&D that strikes an
optimized balance between materials, design
engineering, production technology, and
improved quality.
Surface
Emitting
Laser Diodes
Surface emitting laser diodes that can achieve a narrower
divergence beam is currently being developed. A new
laser oscillation mechanism (resonator) is being introduced
using nanofabrication technologies, making it possible to
generate high-directivity beams. These laser diodes are
expected to be adopted in proximity sensors and for distance
measurement.
In mass production
Status
Features
Applications
N/A
Fabry-Perot Type/
Horizontal Resonator
Multilayer Semiconductor
Film/Vertical Resonator
2D Photonic/
Crystal Resonator
Divergence Angle
(Example)
More than 60°
30°
7°
0.2°
Terahertz
Wave Device
Fabry-Perot Laser Diode
VCSEL
0.2
0.4
0.6
0.8
Frequency ( THz )
Frequency
30GHz
Wavelength
10mm
1
0
10
20
Transmitter Power (μW)
100μm
30THz
Diameter : 120nm
Depth : 115nm
Pitch : 286nm
●
Compact and simple terahertz device
●
Ultra-high-speed Wireless Communication
●
Security ● Food Inspection
●
Non Destructive Imaging
30
●
An inherent spectral finger print terahertz
300THz
●
Selective absorption by moisture content
10μm
1μm
Features
● Enables practical evaluation of
solutions for social infrastructure
and smart agriculture
Sensor Node
pH
EC
Temp.
LP-MCU
RF
SubGHz
IT Agricultural Solution
● Integrated semiconductor-based sensor
provides simple, real-time soil monitoring
● Compact, monolithic sensor measures
PH (acidity/alkalinity), EC (electrical
conductivity), and soil temperature
Applications
27
Infrared Light Sources
Light
LAPIS Semiconductor has developed soil environmental
sensors for social infrastructure and IT agriculture
monitoring, and is conducting experiments towards
improving agricultural productivity, disaster prevention,
and infrastructure monitoring.
Social Infrastructure Solution
●
Co-existence the directivity and permeability
of radio waves
RTD
SBD
3THz
The Cloud
Distance Measurement
●
0.5
1mm
Proximity Sensors
●
Key Features of Terahertz Waves
1
Terahertz Region
Sensor
Node
Applications
Saturation of
the amplifier
2
0
●
● Oscillation and detection at room
temperature using a resonant
tunneling diode
Features
1.5
300GHz
Radio Wave
Soil
Environmental
Sensors
Amplitude ( VP-P )
Intensity (a.u)
0
Surface light emission allows for thinner packages
1.5Gbps
2.5
Oscillation
at Room
Temperature
Simplifies optical systems (i.e. for lenses)
●
Photonic Crystal Laser Diode
ROHM is developing compact terahertz wave
solid-state devices of operating at room
temperature. High frequency operation makes
them ideal for high-speed wireless communication
and terahertz wave non-destructive inspection.
■ Oscillation Spectrum and Detective Sensitivity
●
(Example) SEM
picture of
2D Photonic
Crystal
Narrowing beam
LED
Generates extremely narrow divergence beams
Nanofabrication
Technology
In R&D
Resonator
●
●
Social Infrastructure Monitoring
●
Smart/IT Agriculture
●
Healthcare and Wearables
ROHM Thin-Film
Piezoelectric MEMS
Solution Service
ROHM has conducted R&D over many years, focusing on
technological innovation using ferroelectrics. Utilizing in-house high
reliability production equipment that leverages market-proven
ferroelectric technology and a heterogeneous material
management system allows ROHM to integrate Thin-Film
Piezoelectric MEMS and IC microfabrication technologies. In
addition, joint development with customers will make it possible to
achieve next-generation solutions featuring breakthrough
miniaturization with unprecedented energy-savings
and
performance.
High-performance Thin-Film Piezoelectric Deposition Technology
Handling and Donding Technology for Ultra-thin Wafers Up to 100μm
PZT Film Thickness Range
2.5%
Piezoelectric Constant d31
–190pm/V
Relative Permittivity εr
1,000
Dielectric Loss, tanδ
0.02 to 0.03
Leakage Current
＜1μA/cm2 @40V
Smooth surface(Sol-gel)
2μm line pattern
ROHM’s proprietary Sol-gel deposition technology of PZT thin film has
achieved a film thickness uniformity of 2.0μm ±2.5%.
・Bonding possible at low
temperatures (even at 60°C)
・±3μm alignment accuracy
・Fully automated system improves production efficiency
Silicon Deep Etching Technology
230:1
25μm±1%
0.5μm
oxide
film
25μm±1%
90±0.5°
Selectivity Against Other Oxide Films
Vertical Shape
Dimensional Accuracy
Selectivity at which etching has stopped at
an oxide film thickness of 0.5μm.
Si/SiO2=230
Etching of notch-free shape of a 200μm
deep hole at an angle of 90.5°.
25±0.25μm（1%)
One-Stop Solution
Stable
Supply
MEMS devices use a large quantity of silicon. ROHM has
established an integrated, fully automated production
line utilizing in-house equipment, from silicon ingot
pulling to masking and packaging.
Stacked
Package
Solutions
ROHM offers control ASIC + device development + a highly
integrated production line, and is continually implementing activities
to improve quality in all processes-from development, design, and
wafer manufacturing to sales and service.
In-house
Production System
Assy Line
Frame
Wafer
Sol-gel deposition of PZT thin films, etc.
ROHM develops production
systems completely in-house to
Photo Mask
meet the stringent needs of the
thin-film piezoelectric MEMS
CAD
market.
Silicon Ingot
Sensor Catalog 28
Packages
Non-Lead Package
(0.8)
0.22(0.05
2
2.1(0.1
0.22(0.05
0.275
0.08 M
2 3
+0.03
0.02 -0.02
(0.12)
1.5(0.1
0.5
C0.25
1
(0.45)
(1.2)
5
4
(1.2)
(0.15)
Embossed
carrier tape:
3,000pcs
S
S
0.3
1
3
0.05
0.08 M
4
0.3 6
5
4
Embossed
carrier tape:
3,000pcs
0.3
8
Embossed
carrier
tape:
4,000pcs
5
+0.05
0.2 -0.04
0.25
SON / QFN Package
14
9
28
4.0 ± 0.1
1PIN MARK
15
Embossed carrier tape:
2,500pcs
Embossed carrier tape:
2,000pcs
VQFN028V5050
SSOP5
Embossed
carrier tape:
5,000pcs
Small Package
4.0 (0.1
5.0 (0.1
4
3
0.75± 0.1
0.4 ± 0.1
2
Embossed
carrier tape:
2,500pcs
+0.03
0.02 -0.02
(0.22)
1
2.1 ± 0.1
5
6
20
16
2.1 ± 0.1
C0.2
1
0.8± 0.1
0.22 ( 0.1
SON / QFN Package
VQFN024V4040
1.0MAX
(0.12)
0.02 +0.03
-0.02
0.65± 0.1
0.2 -0.04
0.1
エンボステーピング：2,000pcs
Embossed carrier tape:
2,500pcs
S
0.08 S
+0.05
0.65
0.22 ( 0.1
0.1
0.08 S
14
0.2± 0.1
0.65
S
0.15 ( 0.1
1.15 ( 0.1
0.1
0.6MAX
0.3 Min.
5.6 ( 0.2
1
0.1
1.15 ( 0.1
7
0.15 ( 0.1
0.10
1.5 0.1
0.15 0.1
7.6 ( 0.3
0.3 Min.
4.4 ( 0.2
6.4 ( 0.3
0.3 Min.
1
8
0.4 0.1
10 ( 0.2
(Max. 10.35 include BURR)
8
4.0 ± 0.1
VQFN020V4040
1PIN MARK
4.4 0.2
1
1.2± 0.1
SSON004X1216
1.6 ± 0.1
SSOP-B28
5.0 ( 0.2
(Max. 5.35 include BURR)
10 0.2
(Max. 10.35 include BURR)
6.2 0.3
0.145(0.05
S
0.08 S
6
SSOP-B14
16
0.11
0.5
0.27(0.05
SOP Package
SOP16
1.27
1PIN MARK
0.75(0.1
0.145(0.05
0.08 S
(1.5)
Embossed
carrier tape:
3,000pcs
4
3
0.525
M
1
(0.3)
2
0.6 Max.
3
S
3
5
1
0.35(0.1
0.08
4
(1.5)
2
5
2.6(0.1
(Max. 2.8 include BURR)
3.0(0.1
2
0.75 Max.
0.22 ( 0.05
2.0(0.1
6
0.75 Max.
3.0(0.1
2.6(0.1
(Max. 2.8 include BURR)
1
(0.15)
(0.41)
(0.8)
4
0.5
Embossed
carrier tape:
3,000pcs
4
5
1PIN MARK
0.1 S
1
(0.3)
0.2 Max.
0.3
3
5
6
0.13 ( 0.05
0.5
WSON008X2120 (Clear Type)
(Max. 1.8 include BURR)
1.6(0.1
0.5 0.5
(0.45)
1.2 (0.05
0.08 M
3
WSOF6I
(Max. 1.8 include BURR)
1.6(0.1
S
(0.91)
2
2
(0.41)
+0.03
(0.91)
0.22 (0.05
0.5
4
1
0.13 (0.05
0.1 S
1
5
(Max. 1.28
include BURR)
1.6 (0.05
(0.05)
0.2 Max.
3
0.6 Max.
2
S
0.02 -0.02
0.6 Max.
1
WSOF6
(Clear
Type)
1.0 ( 0.05
0.02 -0.02
1.2 (0.05
4
(Max. 1.28
include BURR)
1.6 (0.05
(0.05)
1.0 ( 0.05
5
1.6 ( 0.05
WSOF5
(Clear
Type)
1.6 ( 0.05
+0.03
HVSOF5
10
11
15
+0.05
0.25 -0.04
1.0
0.5
WL-CSP Package
2.9(0.2
UCSP35L<Pin Pitch: 0.4mm>
VCSP50L<Pin Pitch: 0.5mm>
0.2 Min.
+0.05
0.25 -0.04
LGA Package
22
14
21
1.0 0.5
0.35
0.42 <0.04
0.95
0.1
2.8mm and under: 3,000pcs
Over 2.8mm: 2,500pcs
Embossed carrier tape:3,000pcs
2.8mm and under: 3,000pcs
Over 2.8mm: 2,500pcs
Embossed carrier tape:3,000pcs
Embossed carrier tape:
3,000pcs
15
+0.05
0.25 -0.04
4−0.35
S
5
7
4
8
3
2
9
1
10
0.08 S
0.5
INDEX
(No plating)
1.05
0.05
0.35 0.7
0.7
2.0
0.4
0.4
2.0
0.2
4−R0.15
4−0.50
0.4
0.7 0.35
1.0
0.4
1.0
11 12
INDEX
(No plating)
2.8 ± 0.1
12−□0.40
(Au plating)
4−1.00P×3±0.05
6
2.84
3.70±0.15
0.9 ± 0.1
8°
0.73±0.07
3.40
1.05
4.00±0.15
4−R0.20
0.80 Max.
6
P-WQFN32-0505-0.50-A63
(0.50 to 0.55)
4
P-WQFN32-0505-0.50-63
(0.50 to 0.55)
9
2.65 ± 0.1
2.8 ± 0.1
1
0.80 Max.
C-TQFN12
2.65 ± 0.1
2.8 ± 0.1
0.5
QFN Package (LAPIS Semiconductor Products)
2.8 ± 0.1
WLGA010V28
0.4
6×6
0.1
(0.22)
1.1(0.05
Embossed
carrier tape:
2,500pcs
0.05
8
2.7 (0.1
12
13
0.75 18
0.5
7
~
~
0.4
0.05(0.05
1
28
0.4 (0.1
19
1×1
3×3
~
0.05
1.25 Max.
2.7 (0.1
C0.2
2.4 (0.1
0.4 (0.1
S
6
7
~
3
0.13 <0.03
+0.03
0.02 -0.02
+0.03
0.02-0.02
(0.22)
1
24
2
S
0.08
2.4 (0.1
C0.2
Embossed
carrier tape:
2,500pcs
1.0 Max.
1.0 Max.
S
0.08 S
1
0.50
0.2
0.8×0.8
1PIN MARK
0.1
1PIN MARK
4
1.6 <0.1
2.8(0.2
5.0 (0.1
4.0 (0.1
4° +6°
–4°
5
0.4
(Unit : mm)
0.5
QFN Package (LAPIS Semiconductor Products)
WQFN16-0303-0.50
0.80 Max.
0.80 Max.
16
16
29
WQFN16-0404-0.50
(0.50 to 0.55)
VQFN48
0.80 Max.
0.80 Max.
(0.50 to 0.55)
P-WQFN40-0606-0.50
0.005 to 0.04
P-WQFN40-0505-0.40
WQFN16-0404-0.50
0.05 Max.
ROHM Group Locations
ROHM Group
● Design Centers
● Main Sales Offices
Locations (Japan)
Kyoto
Nagoya
Matsumoto
Sendai
Kyoto Technology Center (Head Office)
Tokyo
Fukuoka
Mito
Takasaki
Kyoto Technology Center (Kyoto Ekimae)
Nishi-Tokyo
Utsunomiya
Yokohama Technology Center
Yokohama
LAPIS Semiconductor Co., Ltd.(Shin-Yokohama)
LAPIS Semiconductor Miyazaki Design Center
● Manufacturing Facilities
● Distribution Centers
ROHM Hamamatsu Co., Ltd. LAPIS Semiconductor Miyagi Co., Ltd.
ROHM Wako Co., Ltd.
LAPIS Semiconductor Miyazaki Co., Ltd.
ROHM Apollo Co., Ltd.
AGLED Co., Ltd.
ROHM Logistec Co., Ltd.
●QA Centers
ROHM Mechatech Co., Ltd.
Kyoto QA Center
Yokohama QA Center
ROHM Mechatech Co., Ltd.
Kyoto
LAPIS Semiconductor Miyagi Co., Ltd.
(Headquarters)
(Miyagi)
Takasaki
Sendai
Matsumoto
Utsunomiya
Mito
Nishi-Tokyo
ROHM Logistec Co., Ltd.
(Okayama)
ROHM
ROHM Wako Co., Ltd.
(Okayama)
Fukuoka
ROHM
Apollo Co., Ltd.
(Fukuoka)
AGLED Co., Ltd.
ROHM Shiga Co., Ltd.
Nagoya
LAPIS Semiconductor
Miyazaki Design Center
LAPIS Semiconductor
Miyazaki Co., Ltd.
(Miyazaki)
ROHM Group
Locations (Global)
Tokyo
Yokohama/
LAPIS Semiconductor (Headquarters)
ROHM Hamamatsu Co., Ltd.
(Shizuoka)
AMERICA
EUROPE
ROHM Semiconductor Korea Corporation
ROHM Semiconductor Trading (Dalian) Co., Ltd.
ROHM Semiconductor (Shanghai) Co., Ltd.
ROHM Semiconductor (Shenzhen) Co., Ltd.
ROHM Semiconductor Hong Kong Co., Ltd.
ROHM Semiconductor Taiwan Co., Ltd.
ROHM Semiconductor Singapore Pte. Ltd.
ROHM Semiconductor Philippines Corporation
ROHM Semiconductor (Thailand) Co., Ltd.
ROHM Semiconductor Malaysia Sdn. Bhd.
ROHM Semiconductor India Pvt. Ltd.
ROHM Semiconductor U.S.A., LLC
ROHM Semiconductor do Brasil Ltda.
ROHM Semiconductor GmbH
AMERICA
EUROPE
Design Centers
Distribution Centers
QA Centers
ASIA
ROHM Korea Corporation
ROHM Electronics Philippines, Inc.
ROHM Integrated Systems (Thailand) Co., Ltd.
ROHM Semiconductor(China) Co., Ltd.
ROHM Electronics Dalian Co., Ltd.
ROHM-Wako Electronics (Malaysia) Sdn. Bhd.
ROHM Mechatech Philippines, Inc.
ROHM Mechatech (Thailand) Co., Ltd.
ROHM Mechatech (Tianjin) Co., Ltd.
AMERICA
EUROPE
Kionix, Inc.
SiCrystal AG
● QA Centers
● Development Centers
ASIA
Manufacturing Facilities
● Manufacturing Centers
● Sales Headquarters
ASIA
Main Sales Offices
ASIA
Korea Design Center
Shanghai Design Center
Shenzhen Design Center
Taiwan Design Center
India Design Center
America Design Center (Santa Clara)
America Design Center (San Diego)
Europe Design Center
AMERICA
EUROPE
Korea QA Center
Shanghai QA Center
Shenzhen QA Center
Taiwan QA Center
Singapore QA Center
Thailand QA Center
USA QA Center
Europe QA Center
Sales Headquarters
Manufacturing Centers
Development Centers
ROHM Semiconductor(China)
ROHM Mechatech (Tianjin)
Germany
ROHM Integrated Systems(Thailand)
ROHM Mechatech (Thailand)
SiCrystal
QA Centers
Dalian
ROHM Electronics Dalian
Hong Kong
Thailand
India
Shenzhen
Korea
ROHM Korea
Shanghai
U.S.A.
Santa Clara
Detroit
Kionix
San Diego
Taiwan
Philippines
ROHM-Wako Electronics (Malaysia)
Malaysia
Singapore
ROHM Electronics Philippines
ROHM Mechatech Philippines
Brazil
Sensor Catalog 30
1) The information contained in this document is provided as of January 1st, 2016.
2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative (as listed below) and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure,
please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any
damages arising out of the use of our Products beyond the rating specified by ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products.The peripheral conditions must be taken into account
when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative: transportation equipment (i.e. cars, ships, trains), primary communication
equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrant that such information is error-free and ROHM shall have no responsibility for any damages
arising from any inaccuracy or misprint of such information.
12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office as listed below.
ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the
US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
R1064A
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No.58P6944E-B 01.2016
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