PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure Dynode Number of Stages Anode to Last Dynode Direct Interelectrode Capacitances Anode to All Other Electrodes Base SuitabIe Socket R636–10 185 to 930 R758–10 160 to 930 300 to 800 GaAs (Cs) 3 12 UV glass Fused silica glass Circular–cage 9 4 6 JEDEC No.B11–88 E678–11A(option) Unit nm nm mm pF pF MAXIMUM RATINGS (Absolute Maximum Values) Supply Voltage Parameter Between Anode and Cathode Between Anode and Last Dynode Average Anode Current CHARACTERISTlCS (at 25 ) Parameter Luminous(2856K) Cathode Sensitivity Min. 400 at 350nm at 632.8nm at 852.1nm Red/White Ratio (with R–68 filter) Radiant Gain Luminous(2856K) Anode Sensitivity Radiant Unit Vdc Vdc mA Value 1500 250 0.001 100 at 350nm at 632.8nm at 852.1nm Typ. 550 62 63 48 0.53 4.5 105 250 2.8 104 2.8 104 2.2 104 0.1 2 20 Anode Dark Current at 10A/lm Anode Pulse Rise Time Time Response Electron Transit Time After 30min. storage in darkness NOTE: Anode characteristics are measured with the voItage distribution ratio shown below. Max. Unit A/lm mA/W A/lm A/W 2 nA ns ns VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Electrodes Ratio 1 1 1 1 1 1 1 1 1 1 SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode P Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are subject to change without notice. No patent right are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBES R636–10, R758–10 Figure 1: Typical Spectral Response TPMSB0069EA 103 CATHODE RADIANT SENSITIVITY(mA/W) QUANTUM EFFICIENCY(%) R636-10 YP 102 R758-10 QUANTUM EFFICIENCY 1 0.1 S 400 600 800 MI DE 105 IN (T GA 100 104 10-1 103 10-2 102 10-3 500 1000 .) YP LU O AN 106 SE U NO 101 TY (T VI TI I NS 0.01 200 107 .) CATHODE RADIANT SENSITIVITY R636-10 10 TPMSB0070EB WAVELENGTH(nm) 700 GAIN R758-10 ANODE LUMINOUS SENSITIVITY(A/lm) 100 Figure 2: Typical Anode Sensitivity and Typical Gain 101 1500 1000 SUPPLY VOLTAGE(V) Figure 3: Dimensional Outline and Basing Diagram (Unit : mm) Socket 29.0 1.7 (E678 – 11A) 8MIN. 3MIN. 49 PHOTOCATHODE 38 5 DY6 6 7 94MAX. DY2 33 3.5 8 DY8 9 DY9 2 10 P 1 5 11 K DY1 DIRECTION OF LIGHT BOTTOM VIEW (BASING DIAGRAM) 29 4 2.5 DY7 DY3 3 49.0 80MAX. DY4 4 12MIN. 16MIN. DY5 34MAX. 18 TPMSA0027EC HA COATING 11 PIN BASE JEDEC No. B11-88 TACCA0008EA HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMS1016E03 JUN. 1994