Datasheet

PHOTOMULTIPLIER TUBE
R669
51 mm (2 Inch) Diameter, 10-stage, Head-on Type
Extended Red Multialkali Photocathode
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Material
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Base
Operating Ambient Temperature
Storage Temperature
Suitable Socket
Description / Value
300 to 900
600
Extended Red Multialkali
46
Borosilicate glass
Box and Grid
10
15-pin glass base
-30 to +50
-80 to +50
E678-15C (supplied)
Unit
nm
nm
—
mm
—
—
—
—
°C
°C
—
Value
1500
250
0.1
Unit
V
V
mA
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
CHARACTERISTICS (at 25 °C)
Cathode Sensitivity
Anode Sensitivity
Parameter
Luminous (2856 K)
Radiant at 420 nm
Red / White Ratio (R-68)
Luminous (2856 K)
Radiant at 420 nm
Gain
Anode Dark Current (after 30 min storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Min.
140
—
—
20
—
—
—
—
—
Typ.
230
50
0.35
75
1.7 × 104
3.3 × 105
7
9.0
70
Max.
—
—
—
—
—
—
15
—
—
Unit
µA/lm
mA/W
—
A/lm
A/W
—
nA
ns
ns
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K
G
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
Electrodes
Ratio
1
1
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage: 1000 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R669
Figure 1: Typical Spectral Response
TPMHB0341EB
102
108
CATHODE
RADIANT
SENSITIVITY
TPMHB0608EB
107
101
106
QUANTUM
EFFICIENCY
100
GAIN
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
Figure 2: Typical Gain Characteristics
105
104
10-1
103
10-2
200
300
400
500
600
700
800
900
102
500
1000
600
FACEPLATE
46MIN.
PHOTOCATHODE
1500
D Type Socket Assembly (sold separately)
E1435-02
PMT
P
DY10
4
40
45
112 ± 2
60
50
DY9
DY8
40.0 ± 0.5
SIGNAL GND
SIGNAL OUTPUT
RG-174/U (BLACK)
R12
C3
R11
C2
R10
C1
4
8
3
R9
DY7
2
36.0 ± 0.5
2
11.5
40
5
13 MAX.
SOCKET
PIN No.
6
52.0 ± 0.5
5
15 PIN BASE
1200
Figure 4: Accessories (Unit: mm)
Socket (supplied)
E678-15C
51.0 ± 1.5
800 900 1000
SUPPLY VOLTAGE (V)
WAVELENGTH (nm)
Figure 3: Dimensional Outline and
Basing Diagram (Unit: mm)
700
R1 to R12 : 330 kΩ
C1 to C3 : 10 nF
C4 : 4.7 nF
9
R8
DY6
2
DY5
10
DY4
1
DY3
11
DY2
15
DY1
12
R7
HOUSING
(METAL)
C4
R6
R5
DY10 4
DY8 3
DY6
450 ± 10
R4
TACCA0201EA
IC DY9 DY7
P
7 8 9
DY5
10
6
IC 5
11 DY3
POTTING
COMPOUND
R2
G
K
1
DY4
R1
* The housing is internally connected to
the GND.
** High voltage shielded cable can be
connected to a connector for RG-174/U.
13
K
14
15
G
DY2
SHORT PIN
14
13
12 DY1
2
R3
-HV
SHIELD CABLE
(RED)
POWER
SUPPLY GND
TACCA0246EB
TPMHA0457EA
HAMAMATSU PHOTONICS K.K.
* HAMAMATSU also provides C11152 series high voltage power supply modules.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
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North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMH1257E04
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected]
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
FEB. 2014 IP