HVGT ESJG05F16 16kV 50mA HIGH VOLTAGE DIODES Outline Drawings : mm ESJG05F16 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features High speed switching High Current 22 min. High temperature resistance 15.0 High reliability design High Voltage 22 min. DO-415 Cathode Mark Applications X light Power supply Type Mark ESJG05F16 ESJG05F16 Laser Voltage doubler circuit Microwave emission power Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition ESJG05F16 Units 16 kV 50 mA I FSM 5.0 A peak Junction Temperature Tj 160 °C Allowable Operation Case Temperature Tc 160 °C Storage Temperature Tstg -40 to +165 °C Conditions ESJG05F16 Units Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=30°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 24 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 2.0 uA IR2 at 160°C,V R =VRRM 100 uA Maximum Reverse Recovery Time Trr at 25°C 80 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2015