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HVGT
ESJC50-08
8.0kV 500mA HIGH VOLTAGE DIODE
Outline Drawings : mm
is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
ESJC50-08
Cathode Mark
Lot No.
o 7.5
o 1.28
Features
High speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
20 min.
22
20 min.
DO-721
Cathode Mark
Applications
X light Power supply
Mark
Type
Laser
Voltage doubler circuit
Microwave emission power
HVGT
ESJC50-08
ESJC50-08
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
Items
Condition
ESJC50-08
Units
8.0
kV
500
mA
I FSM
50
Apeak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
125
°C
Storage Temperature
Tstg
-40 to +125
°C
V RRM
Repetitive Peak Renerse Voltage
IO
Average Output Current
Suege Current
Ta=25°C,Resistive Load
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
ESJC50-08
Conditions
Units
Maximum Forward Voltage Drop
VF
at 25°C,IF=IF(AV)
15
V
Maximum Reverse Current
IR1
at 25°C,VR=VRRM
1.0
µA
IR2
at 100°C,VR=VRRM
10
µA
Maximum Reverse Recovery Time
Trr
at 25°C
50
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
-
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:[email protected]
2014