HVGT ESJC50-08 8.0kV 500mA HIGH VOLTAGE DIODE Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJC50-08 Cathode Mark Lot No. o 7.5 o 1.28 Features High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 20 min. 22 20 min. DO-721 Cathode Mark Applications X light Power supply Mark Type Laser Voltage doubler circuit Microwave emission power HVGT ESJC50-08 ESJC50-08 Maximum Ratings and Characteristics Absolute Maximum Ratings Symbols Items Condition ESJC50-08 Units 8.0 kV 500 mA I FSM 50 Apeak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +125 °C V RRM Repetitive Peak Renerse Voltage IO Average Output Current Suege Current Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols ESJC50-08 Conditions Units Maximum Forward Voltage Drop VF at 25°C,IF=IF(AV) 15 V Maximum Reverse Current IR1 at 25°C,VR=VRRM 1.0 µA IR2 at 100°C,VR=VRRM 10 µA Maximum Reverse Recovery Time Trr at 25°C 50 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz - pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014