VS-70HF(R) Series Datasheet

VS-70HF(R) Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 70 A
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V VRRM
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AB (DO-5)
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
IF(AV)
70 A
Package
DO-203AB (DO-5)
Circuit configuration
Single diode
• Power supplies
• Machine tool controls
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
I2t
VRRM
140/160
UNITS
70
70
A
TC
140
110
°C
110
110
A
50 Hz
1200
1200
60 Hz
1250
1250
50 Hz
7100
7100
60 Hz
6450
6450
Range
100 to 1200
1400/1600
V
-65 to 180
-65 to 150
°C
IF(RMS)
IFSM
70HF(R)
10 TO 120
TJ
A
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-70HF(R)
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VR(BR), MINIMUM
AVALANCHE
VOLTAGE
V
10
100
200
200
20
200
300
300
40
400
500
500
60
600
720
725
80
800
960
950
100
1000
1200
1150
120
1200
1440
1350
140
1400
1650
1550
160
1600
1900
1750
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
9
4.5
Revision: 29-Jan-14
Document Number: 93521
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VS-70HF(R) Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
t = 8.3 ms
t = 10 ms
t = 10 ms
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
110
°C
110
t = 8.3 ms
Maximum I2t for fusing
A
140
IF(RMS)
IFSM
UNITS
70
180° conduction, half sine wave
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
70HF(R)
10 TO 120 140/160
TEST CONDITIONS
100 % VRRM
reapplied
No voltage
reapplied
A
1200
No voltage
reapplied
1250
A
1000
Sinusoidal half wave,
initial TJ =
TJ maximum
1050
7100
6450
A2s
5000
100 % VRRM
reapplied
4550
t = 0.1 ms to 10 ms, no voltage reapplied
A2s
71 000
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
0.79
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ = TJ maximum
1.00
Low level value of forward
slope resistance
rf1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
2.33
High level value of forward
slope resistance
rf2
(I >  x IF(AV)), TJ = TJ maximum
1.53
V
m
Maximum forward voltage drop
VFM
Ipk = 220 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.35
1.46
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
70HF(R)
10 TO 120 140/160
-65 to 180
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.45
Thermal resistance,case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
Maximum allowable mounting torque
(+0 %, -10 %)
Case style
-65 to
150
Not lubricated thread, tighting on nut (1)
3.4 (30)
Lubricated thread, tighting on nut (1)
2.3 (20)
Not lubricated thread, tighting on hexagon (2)
4.2 (37)
Lubricated thread, tighting on hexagon (2)
3.2 (28)
Approximate weight
See dimensions - link at the end of datasheet
UNITS
°C
K/W
N·m
(lbf · in)
17
g
0.6
oz.
DO-203AB (DO-5)
Notes
(1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.08
0.06
120°
0.10
0.11
90°
0.13
0.14
60°
0.19
0.20
30°
0.30
0.30
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 29-Jan-14
Document Number: 93521
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70HF(R) Series
Vishay Semiconductors
180
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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70HF(R) Series (100V to 1200V)
R thJC (DC) = 0.45 K/W
170
160
Conduction Angle
150
140
60°
90°
30°
120°
180°
130
0
10
20
30
40
50
60
70
150
70HF(R) Series (1400V to 1600V)
R thJC (DC) = 0.45 K/W
140
130
Conduction Angle
120
110
90°
60°
100
0
80
10
180
70HF(R) Series (100V to 1200V)
R thJC (DC) = 0.45 K/W
160
Conduction Period
150
140
90°
60°
120°
30°
180°
DC
120
0
20
40
60
80
40
50
60
70
80
100
150
70HF(R) Series (1400V to 1600V)
R thJC (DC) = 0.45 K/W
140
130
Conduction Period
120
110
90°
100
60°
30°
120°
180°
DC
60
100
90
120
0
20
Average Forward Current (A)
40
80
120
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
90
SA
2K
/W
3K
/W
40
R
elta
-D
RMS Limit
50
K/W
.3
=0
K/
W
R th
K/W
0.5
W
K/
60
1.
5
W
K/
70
1
180°
120°
90°
60°
30°
80
0.7
Maximum Average Forward Power Loss (W)
30
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Ratings Characteristics
130
20
Average Forward Current (A)
Average Forward Current (A)
170
120°
180°
30°
4K
/W
30
Conduction Angle
20
70HF(R) Series
(100V to 1200V)
TJ = 180°C
10
5 K/
W
0
0
10
20
30
40
50
60
Average Forward Current (A)
70
0 20 40 60 80 100 120 140 160 180
80
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 29-Jan-14
Document Number: 93521
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70HF(R) Series
Vishay Semiconductors
120
K/
W
W
K/
.3
=0
1.5
K/
W
2K
/W
RMS Limit
aR
elt
-D
60
SA
80
1
R th
W
K/
0.5
100
W
K/
DC
180°
120°
90°
60°
30°
7
0.
Maximum Average Forward Power Loss (W)
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3K
/W
40
Conduction Period
5 K/W
70HF(R) Series
(100V to 1200V)
TJ = 180°C
20
0
0
20
40
60
80
100
0 20 40 60 80 100 120 140 160 180
120
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
90
75
aR
elt
-D
3K
/W
4K
/W
40
30
Conduction Angle
20
70HF(R) Series
(1400V to 1600V)
TJ = 150°C
10
K/W
.3
=0
A
R thS
/W
5K
0.
50
1.5
K/
W
2K
/W
RMS Limit
50
W
K/
60
W
K/
70
7
0.
180°
120°
90°
60°
30°
80
1
Maximum Average Forward Power Loss (W)
Fig. 6 - Forward Power Loss Characteristics
5 K/W
0
0
10
20
30
40
50
60
70
Average Forward Current (A)
0
80
25
100
125
150
Maximum Allowable Ambient Temperature (°C)
120
=
3
0.
K/
W
SA
1
W
K/
K/
W
W
K/
a
elt
-D
80
0.
7
R th
DC
180°
120°
90°
60°
30°
100
5
0.
1.5
K/W
2K
/W
60
RMS Limit
40
Conduction Period
70HF(R) Series
(1400V to 1600V)
TJ = 150°C
20
R
Maximum Average Forward Power Loss (W)
Fig. 7 - Forward Power Loss Characteristics
3K
/W
5 K/W
0
0
20
40
60
80
100
Average Forward Current (A)
0
120
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Revision: 29-Jan-14
Document Number: 93521
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70HF(R) Series
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1000
1100
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = TJ Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Vishay Semiconductors
800
700
600
500
70HF(R) Series
400
100
TJ = 25°C
10
TJ = TJ Max.
70HF(R) Series
1
300
1
10
0
100
0.5
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J = TJ Max.
No Voltage Reapplied
Rated VRRM Reapplied
800
700
600
500
400
300
200
0.01
70HF(R) Series
0.1
1.5
2
2.5
3
Fig. 11 - Forward Voltage Drop Characteristics
Transient Thermal Impedance ZthJC (K/W)
Peak Half Sine Wave Forward Current (A)
Fig. 9 - Maximum Non-Repetitive Surge Current
1200
1
Instantaneous Forward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1
10
Steady State Value
R thJC = 0.45 K/W
(DC Operation)
1
0.1
0.01
70HF(R) Series
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 12 - Thermal Impedance ZthJC Characteristics
Instantaneous Forward Current (A)
1000
TJ = 25 °C
TJ = TJ Max.
100
10
70HF (R) Series
(140 to 160)
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Revision: 29-Jan-14
Document Number: 93521
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-70HF(R) Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
70
HF
R
160
M
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
70 = Standard device
71 = Not isolated lead
72 = Isolated lead with silicone sleeve
(red = Reverse polarity)
(blue = Normal polarity)
3
-
4
-
HF = Standard diode
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
-
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Stud base DO-203AB (DO-5) 1/4" 28UNF-2A
M = Stud base DO-203AB (DO-5) M6 x 1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95343
Revision: 29-Jan-14
Document Number: 93521
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 70HF(R) and 71HF(R) Series
DIMENSIONS FOR 70HF(R) SERIES in millimeters (inches)
Ø 14.6 (0.57)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 ± 0.4
(0.44 ± 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
Document Number: 95343
Revision: 29-Sep-08
17.40 (0.68)
For technical questions, contact: [email protected]
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Outline Dimensions
DO-203AB (DO-5) for 70HF(R)
and 71HF(R) Series
Vishay Semiconductors
DIMENSIONS FOR 71HF(R) SERIES in millimeters (inches)
12.2 (0.48) MAX.
Ø 7 (0.28) MAX.
134.4 (5.29)
MAX.
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2
123 (4.84)
MAX.
For technical questions, contact: [email protected]
Document Number: 95343
Revision: 29-Sep-08
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