点击下载

R2000F
200mA 2.0kV 500nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
F
2K T
R VG
H
*Fast switching
*Low leakage
*High reliability
*High current capability
*High surge capability
Applications
*
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: MIL-STD-202E, Method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.3 gram
DO-41 Series
Lead Diameter 0.9mm
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
DIA
.107(2.7) DIA
.080(2.0)
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
Items
Repetitive Peak Renerse Voltage
V RRM
IO
Average Output Current
I FSM
Suege Current
Condition
R2000F
Units
Ta=25°C,
2.0
kV
Ta=25°C,Resistive Load
200
mA
Ta=25°C,8.3 ms
30
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
125
°C
Storage Temperature
Tstg
-65 to +175
°C
R2000F
Units
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
2.0
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
5.0
uA
IR2
at 100°C,V R =VRRM
100
uA
Maximum Reverse Recovery Time
Trr
at 25°C; I F =0.5A;
500
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
6.0
pF
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
n
E-mail: [email protected]
4001 83 84 85
China Tel:
I R =1.0A;
n
Irr =0.25A;
Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
n
www.getedz.com
www.hvgtsemi.com
01
R2000F
200mA 2.0kV 500nS-HIGH VOLTAGE DIODE
RA TING AND CHARACTERISTIC CURVES:
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
n
E-mail: [email protected]
4001 83 84 85
China Tel:
n
Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
n
www.getedz.com
www.hvgtsemi.com
02