R2000F 200mA 2.0kV 500nS-HIGH VOLTAGE DIODE High reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : Features F 2K T R VG H *Fast switching *Low leakage *High reliability *High current capability *High surge capability Applications * * * * * * Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-202E, Method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.3 gram DO-41 Series Lead Diameter 0.9mm 1.0(25.4) MIN .034(0.9) .028(0.7) .205(5.2) .166(4.2) 1.0(25.4) MIN DIA .107(2.7) DIA .080(2.0) Maximum Ratings and Characteristics Absolute Maximum Ratings Symbols Items Repetitive Peak Renerse Voltage V RRM IO Average Output Current I FSM Suege Current Condition R2000F Units Ta=25°C, 2.0 kV Ta=25°C,Resistive Load 200 mA Ta=25°C,8.3 ms 30 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -65 to +175 °C R2000F Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 2.0 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 100 uA Maximum Reverse Recovery Time Trr at 25°C; I F =0.5A; 500 nS Junction Capacitance Cj at 25°C; V R=0V,f=1MHz 6.0 pF GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA n E-mail: [email protected] 4001 83 84 85 China Tel: I R =1.0A; n Irr =0.25A; Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n www.getedz.com www.hvgtsemi.com 01 R2000F 200mA 2.0kV 500nS-HIGH VOLTAGE DIODE RA TING AND CHARACTERISTIC CURVES: GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA n E-mail: [email protected] 4001 83 84 85 China Tel: n Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n www.getedz.com www.hvgtsemi.com 02