ZXTN25020DG QFZT653 20V NPN HIGH GAIN TRANSISTOR IN SOT223 Green Features Mechanical Data BVCEX > 100V BVCEO > 20V BVECO > 6V IC = 7A High Continuous Current Low Saturation Voltage VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ Complementary PNP Type: ZXTP25020DG Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) Applications DC-DC Converters Motor Drive Relay, Lamp and Solenoid Drive Regulator Circuits C SOT223 E B C C B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4) Product ZXTN25020DGTA Notes: Compliance AEC-Q101 Marking ZXTN25020D Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZXTN25 020D ZXTN25020DG Document Number DS33695 Rev. 2 - 2 YWW SOT223 ZXTN25020D = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com November 2015 © Diodes Incorporated ZXTN25020DG QFZT653 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage (forward blocking) Collector-Emitter Voltage Emitter-Collector Voltage (reverse blocking) Emitter-Base Voltage Continuous Collector Current Base Current Peak Pulse Current Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM Value 100 100 20 6 7 7 1 15 Unit V V V V V A A A Value 1.2 9.6 1.6 12.8 3 24 5.3 42 104 78 42 23.5 16 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) Power Dissipation Linear Derating Factor (Note 6) PD (Note 7) (Note 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range (Note 5) (Note 6) (Note 7) (Note 8) (Note 9) RθJA RθJL TJ, TSTG W mW/°C °C/W °C ESD Ratings (Note 10) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7 measured at t<5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN25020DG Document Number DS33695 Rev. 2 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated ZXTN25020DG QFZT653 Thermal Characteristics and Derating Information (@TA = +25°C, unless otherwise specified.) 1m 10 Limit IC Collector Current (A) IC Collector Current (A) VCE(sat) DC 1 1s 100ms 10ms 100m 1ms Single Pulse. T amb=25°C 10m 100m 100µs 1 10 Failure may occur in this region 100µ BVBR(CEO) = 20V 10µ 1µ BVBR(CEV) = 100V 100n 0 VCE Collector-Emitter Voltage (V) D=0.5 20 Single Pulse D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 30 0 100µ Max Power Dissipation (W) 80 100 Single Pulse. T amb=25°C 100 10 1 100µ Transient Thermal Impedance 3.0 60 Safe Operating Area 40 D=0.2 40 VCE Collector-Emitter Voltage (V) Safe Operating Area 10 20 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation See note (7) 2.5 2.0 See note (6) 1.5 1.0 0.5 0.0 0 See note (5) 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve ZXTN25020DG Document Number DS33695 Rev. 2 - 2 3 of 7 www.diodes.com November 2015 © Diodes Incorporated ZXTN25020DG QFZT653 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (forward blocking) Collector-Emitter Breakdown Voltage (Note 11) Emitter-Collector Breakdown Voltage (reverse blocking) Symbol BVCBO Min 100 Typ 125 Max Unit V BVCEX 100 120 V BVCEO 20 35 V BVECX 6 8.3 V Emitter-Collector Breakdown Voltage (reverse blocking) BVECO 5 6.1 V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 7 8.3 < 1 50 0.5 V nA µA IE = 100µA VCB = 100V VCB = 100V, TA = 100°C VCE = 100V, RBE <1kΩ or -1V < VBE > 0.25V VEB = 5.6V IC = 1A, IB = 100mA IC = 1A, IB = 20mA IC = 2A, IB = 40mA IC = 2A, IB = 20mA IC = 7A, IB = 700mA IC = 7A, IB = 700mA IC = 7A, VCE = 2V IC = 10mA, VCE = 2V IC = 2A, VCE = 2V IC = 7A, VCE = 2V IC = 15A, VCE = 2V VCE = 10V, IC = 50mA, f = 100MHz VEB = 0.5V, f = 1MHz VCB = 10V, f = 1MHz Collector Cut-Off Current ICBO Collector-Emitter Cut-Off Current ICEX 100 nA Emitter Cut-Off Current IEBO 300 250 50 <1 40 60 100 130 225 1,090 950 450 360 85 15 50 48 75 120 180 290 1,150 1,050 900 nA mV mV mV mV mV mV mV fT 215 MHz Cibo Cobo td tr ts tf 152 16.5 67.7 72.2 361 63.9 25 pF pF ns ns ns ns Collector-Emitter Saturation Voltage (Note 11) VCE(sat) Base-Emitter Saturation Voltage (Note 11) Base-Emitter Turn-On Voltage (Note 11) VBE(sat) VBE(on) DC Current Gain (Note 11) Current Gain-Bandwidth Product (Note 11) Input Capacitance (Note 11) Output Capacitance (Note 11) Delay Time Rise Time Storage Time Fall Time Note: hFE Test Condition IC = 100µA IC = 100µA, RBE <1kΩ or -1V< VBE > 0.25V IC = 10mA IE = 100µA, RBC <1kΩ or 0.25V< VBC > -0.25V IC = 1A, VCC = 10V, IB1 = -IB2 = 10mA 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTN25020DG Document Number DS33695 Rev. 2 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated ZXTN25020DG QFZT653 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) ZXTN25020DG Document Number DS33695 Rev. 2 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated ZXTN25020DG QFZT653 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A1 7° 7° A SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Y2 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X ZXTN25020DG Document Number DS33695 Rev. 2 - 2 C 6 of 7 www.diodes.com November 2015 © Diodes Incorporated ZXTN25020DG QFZT653 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com ZXTN25020DG Document Number DS33695 Rev. 2 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated