ZXTN25020DZ

ZXTN25020DZ
20V NPN high gain transistor in SOT89
Summary
BVCEX > 100V
BVCEO > 20V
BVECX > 6V
IC(cont) = 6A
VCE(sat) < 48mV @ 1A
RCE(sat) = 30m⍀
PD = 2.4W
Complementary part number ZXTP25020DZ
Description
C
Packaged in the SOT89 outline this new low saturation 20V NPN
transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions
B
Features
•
6 Amps continuous current
•
Up to 15 Amps peak current
•
High current gain
•
Very low saturation voltages
•
100V forward blocking voltage
•
6V reverse blocking voltage
E
Applications
•
Emergency lighting circuits
•
Motor driving
•
Camera strobe
•
Boost converters
•
Backlight inverters
•
MOSFET gate drivers
•
LED Driving
E
C
C
B
Pinout - top view
Ordering information
Device
ZXTN25020DZTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
Device marking
1K8
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ZXTN25020DZ
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
100
V
Collector-Emitter voltage (forward blocking)
VCEX
100
V
Collector-Emitter voltage
VCEO
20
V
Emitter-Collector voltage (reverse blocking)
VECX
6
V
Emitter-Base voltage
VEBO
7
V
Continuous Collector current(c)
IC
6
A
Base current
IB
1
A
Peak pulse current
ICM
15
A
Power dissipation at TA =25°C(a)
PD
1.1
W
8.8
mW/°C
1.8
W
14.4
mW/°C
2.4
W
19.2
mW/°C
4.46
W
35.7
mW/°C
19.2
W
153
mW/°C
Tj, Tstg
-55 to 150
°C
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
PD
Power dissipation at TA =25°C(c)
Linear derating factor
PD
Power dissipation at TA =25°C(d)
Linear derating factor
PD
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient(a)
R⍜JA
117
°C/W
Junction to
ambient(b)
R⍜JA
68
°C/W
Junction to ambient(c)
R⍜JA
51
°C/W
Junction to ambient(d)
R⍜JA
28
°C/W
Junction to case(e)
R⍜JC
7.95
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab. Typical
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ZXTN25020DZ
Thermal characteristics
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ZXTN25020DZ
Thermal characteristics
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ZXTN25020DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
Min.
100
Typ.
125
BVCEX
100
120
V
IC = 100μA, RBE ≤ 1kΩ or
-1V < VBE < 0.25V
BVCEO
20
35
V
IC= 10mA (*)
BVECX
6
8
V
IE = 100μA, RBC ≤ 1kΩ or
0.25V > VBC > -0.25V
BVECO
5.0
6.0
V
IE = 100μA
BVEBO
7.0
8.3
V
IE = 100μA
ICBO
<1
Max.
Unit
V
Conditions
IC = 100μA
50
0.5
nA
μA
VCB = 100V
VCB = 100V, Tamb=100°C
100
nA
VCE = 100V, RBE ≤ 1kΩ or
-1V < VBE < 0.25V
Collector-Emitter cut-off
current
ICEX
Emitter cut-off current
IEBO
<1
50
nA
VEB = -5.6V
Collector-Emitter
saturation voltage
VCE(sat)
40
60
100
130
100
210
48
75
120
180
120
270
mV
mV
mV
mV
mV
mV
IC = 1A, IB = 100mA(*)
IC = 1A, IB = 20mA(*)
IC = 2A, IB = 40mA(*)
IC = 2A, IB = 20mA(*)
IC = 3A, IB = 300mA(*)
IC = 6A, IB = 300mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
1000
1050
mV
IC = 6A, IB = 300mA(*)
VBE(on)
875
950
mV
IC = 6A, VCE = 2V(*)
450
360
110
15
900
Transition frequency
fT
215
MHz
IC = 50mA, VCE = 10V
f = 100MHz
Input capacitance
Cibo
152
pF
VEB = 0.5V, f = 1MHz(*)
Output capacitance
Cobo
16.5
pF
VCB = 10V, f = 1MHz(*)
Delay time
td
67.7
ns
Rise time
tr
72.2
ns
Storage time
ts
361
ns
Fall time
tf
63.9
ns
hFE
300
250
50
25
IC = 10mA, VCE = 2V(*)
IC = 2A, VCE = 2V(*)
IC = 6A, VCE = 2V(*)
IC = 15A, VCE = 2V(*)
IC = 1A, VCC = 10V,
IB1 = -IB2 = 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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ZXTN25020DZ
Typical characteristics
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ZXTN25020DZ
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.52
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN25020DZ
Definitions
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
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1. are intended to implant into the body
or
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Future device intended for production at some point. Samples may be available
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Product status recommended for new designs
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may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2008 Published by Zetex Semiconductors plc
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