ZXSBMR16PT8

ZXSBMR16PT8
SCHOTTKY BRIDGE RECTIFIER PLUS FREEWHEEL DIODE
Product Summary
Features and Benefits
•
•
•
•
•
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Schottky Bridge and Freewheel diode for use in MR16 LED
Drive
Internal Ambient Temperature = 90°C MAX within MR16 circuit
enclosure
VR = 13.2VRMS
IF = 0.4AAVG
IR = 10μA
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•
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Compact surface mount solution and reduced component count in
MR16 LED drive circuit
Optimized bridge and freewheel diode for use in MR16 LED diode
circuitry
Low VF and low reverse leakage current
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
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•
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This low leakage Schottky bridge and freewheel diode have been
specifically designed for the MR16 LED driver solution alongside
ZXLD1350E5 as described in Design Note DN86.
Case: SM-8
Case Material: TBD
Moisture Sensitivity: TBD
Terminals: TBD
Weight: TBD grams (approximate)
SM-8
Top View
Device Circuit
Top View
Pin-Out
Ordering Information (Note 1)
Device
ZXSBMR16PT8TA
Notes:
Packaging
SM-8
Shipping
1000/Tape & Reel
1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
ZXMB
MR16P
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
ZXSBMR16P = Product Type Marking Code
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ZXSBMR16PT8
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
Average Rectified Forward Current (Notes 2 & 3)
Peak Repetitive Forward Current
Non Repetitive Forward Current
Symbol
VRRM
VRMS
IF(AV)
IFPK
t ≤ 100μs
t ≤ 10ms
IFSM
Value
40
13.2
0.4
3.5
13
3.5
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
PD
1
W
Thermal Resistance, Junction to Ambient (Note 2)
RθJA
125
°C/W
Junction Temperature, Forward Dissipation Only
Junction Temperature, Reverse Dissipation (Notes 2, 3, & 4)
Storage Temperature Range
MR16 LED Internal Ambient Temperature (Note 4)
TJ
TJ
TSTG
TA
150
125
-55 to +150
90
°C
°C
°C
°C
Power Dissipation, TA = 25°C (Note 2)
Notes:
2. For a bridge mounted on1.6mm FR4 PCB with minimum copper pads and track dimensions in still air.
3. Supply 12V RMS with capacitive bridge load.
4. Maximum bridge operating junction temperature must be reduced with increased reverse bias voltage to maintain unconditional thermal stability.
5. Refer to Design Note DN86
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 4)
VF
Reverse Current
IR
Diode Capacitance
CD
Min
40
-
Reverse Recovery Time
trr
-
3
-
ns
Reverse Recovery Charge
Qrr
-
210
-
pC
Notes:
Symbol
V(BR)R
Typ
305
355
405
485
570
640
415
6
370
16
Max
360
410
470
550
660
750
10
-
Unit
V
mV
μA
pF
Test Condition
IR = 200μA
IF = 50mA
IF = 100mA
IF = 250mA
IF = 500mA
IF = 750mA
IF = 1A
IF = 500mA, TA = 100°C
VR = 30V
VR = 30V, TA = 85°C
f = 1MHz, VR = 30V
Switched from IF = 100mA to
IR = 100mA
Measured @ IR = 10mA
di/dt = 500mA/ns.
Rsource = 6Ω; Rload = 10Ω
4. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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Package Outline Dimensions
E
A
E1
A1
b
D
e
15°
e1
45°
SM-8
Dim Min Max
Typ
A
1.7
−
−
A1
0.02
0.1
−
b
0.7
−
−
c
0.24 0.32
−
D
6.3
6.7
−
e
1.53
−
−
e1
4.59
−
−
E
6.7
7.3
−
E1
3.3
3.7
−
L
0.9
−
−
All Dimensions in mm
c
L
Suggested Pad Layout
Y (8x)
Dimensions
C
C1
X
Y
Y1
C1
Y1
X (8x)
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
Value (in mm)
1.52
4.6
0.95
2.80
6.80
C
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ZXSBMR16PT8
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Copyright © 2011, Diodes Incorporated
www.diodes.com
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
6 of 6
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February 2011
© Diodes Incorporated