A Product Line of Diodes Incorporated ZXTN2040F 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > 40V IC = 1A Continuous Collector Current Low Saturation Voltage VCE(sat) < 500mV @ 1A Complementary Part Number ZXTP2041F Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • Case: SOT23 Case material: Molded Plastic. “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Description Applications This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. • • Power MOSFET date driving Low loss power switching C SOT23 E B C B E Top View Top View Pin Configuration Device Symbol Ordering Information (Note 4) Part Number ZXTN2040FTA Notes: Marking N40 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information N40 ZXTN2040F Document number: DS33668 Rev. 3 - 2 N40 = Product Type Marking Code 1 of 6 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN2040F Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 5) Peak Pulse Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value 40 40 6 1 2 1 Unit V V V A A A Symbol Value 310 350 403 357 350 -55 to +150 Unit Thermal Characteristics Characteristic (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Notes: PD RθJA RθJL TJ,TSTG mW °C/W °C/W °C 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition. 6. Same as Note 5, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 400 Thermal Resistance (°C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (°C) 350 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100µ D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. Tamb=25°C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation ZXTN2040F Document number: DS33668 Rev. 3 - 2 2 of 6 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN2040F Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (base open) (Note 8) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVCBO 40 — — V IC = 100µA BVCEO 40 — — V IC = 10mA BVEBO 6 — — V IE = 100µA Collector-emitter cut-off current ICES — — 100 nA VCE = 30V Collector-base Cut-off Current ICBO — — 100 nA VCB = 30V Emitter-base Cut-off Current ON CHARACTERISTICS (Note 8) IEBO — — 100 nA VEB = 5V hFE 300 300 200 35 — — 900 — — — IC = 1mA, VCE = 5V IC = 500mA, VCE = 5V IC = 1A, VCE = 5V IC = 2A, VCE = 5V Collector-Emitter Saturation Voltage VCE(sat) — — 200 300 500 mV IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA Base-Emitter Saturation Voltage VBE(sat) — — 1.1 V IC = 1A, IB = 100mA Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS (Note 8) VBE(on) — — 1.0 V IC = 1A, VCE = 5V Transition Frequency fT 150 — — MHz Output Capacitance Cobo — — 10 pF Static Forward Current Transfer Ratio Notes: IC = 50mA, VCE = 10V, f = 100MHz VCB = 10V, f = 1MHz 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% ZXTN2040F Document number: DS33668 Rev. 3 - 2 3 of 6 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN2040F Typical Electrical Characteristics ZXTN2040F Document number: DS33668 Rev. 3 - 2 4 of 6 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN2040F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X ZXTN2040F Document number: DS33668 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 5 of 6 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN2040F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com ZXTN2040F Document number: DS33668 Rev. 3 - 2 6 of 6 www.diodes.com August 2012 © Diodes Incorporated