VTVS5V0ASMF to VTVS63GSMF Datasheet

VTVS5V0ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
400 W TransZorb® Transient Voltage Suppressor (TVS)
Diode in SMF-Package
FEATURES
• 400 W peak pulse power capability with a
10/1000 μs waveform
• Tolerance of the avalanche breakdown voltage
± 5 % VTVSxxxA...
± 2 % VTVSxxxG...
2
1
20278
• Low-profile package
17249
• Wave and reflow solderable
PRIMARY CHARACTERISTICS
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
VBR
6.4 V to 78.2 V
VWM
5.0 V to 63 V
PPPM
400 W
• Excellent clamping capability
TJ max.
175 °C
• “Low-Noise” technology - very fast response time
Polarity
Uni-directional
Package
DO-219AB (SMF)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MARKING (example only)
XX
YY







22623
Bar = cathode marking
YY = type code (see table below)
XX = date code
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART NUMBER
(EXAMPLE)
TOLERANCE
VBR
AEC-Q101
QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE
TERMINATIONS
HALOGEN-FREE
VTVS5V0ASMF-
±5%
VTVS5V0ASMF-
±5%
VTVS5V0ASMF-
±5%
VTVS5V0ASMF-
±5%
VTVS5V0GSMF-
±2%
VTVS5V0GSMF-
±2%
VTVS5V0GSMF-
±2%
VTVS5V0GSMF-
±2%
M
H
H
H
H
PACKAGING CODE
3K PER
7" REEL
TIN
(8 mm TAPE),
PLATED
30K/BOX =
MOQ
3
-08
M
3
-08
M
3
10K PER
13" REEL
(8 mm TAPE),
50K/BOX =
MOQ
ORDERING CODE
(EXAMPLE)
VTVS5V0ASMF-M3-08
VTVS5V0ASMF-HM3-08
-18
-18
VTVS5V0ASMF-M3-18
M
3
M
3
-08
VTVS5V0GSMF-M3-08
VTVS5V0ASMF-HM3-18
M
3
-08
VTVS5V0GSMF-HM3-08
M
3
-18
VTVS5V0GSMF-M3-18
M
3
-18
VTVS5V0GSMF-HM3-18
PACKAGE DATA
PACKAGE
NAME
MOLDING WEIGHT
COMPOUND
(mg)
DO-219AB
(SMF)
Halogen-free
Rev. 1.0, 15-Dec-15
15
MOLDING
HEIGHT LENGTH WIDTH
COMPOUND
MAX.
MAX.
MAX.
FLAMMABILITY
(mm)
(mm)
(mm)
RATING
1.08
3.9
1.9
UL 94 V-0
MOISTURE
SENSITIVITY
LEVEL
MSL level 1
(acc. J-STD-020)
WHISKER TEST SOLDERING
ACC. JESD 201 CONDITIONS
class 2
Peak
temperature
max. 260 °C
Document Number: 85891
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VTVS5V0ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
A
W
Peak pulse current
tp = 10/1000 μs waveform
IPPM
see “Electrical
Characteristics”
Peak pulse power
tp = 10/1000 μs waveform
PPP
400
Contact discharge acc. IEC 61000-4-2; 10 pulses
ESD immunity
VESD
Air discharge acc. IEC 61000-4-2; 10 pulses
Thermal resistance
± 30
kV
± 30
kV
Mounted on infinite heat sink
RthJL
20
K/W
IF = 50 A, tp = 1 ms
VF
1.8
V
Junction temperature
TJ
-55 to +175
°C
TSTG
-55 to +175
°C
Forward clamping voltage
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYPE
CODE
PART
NUMBER
HALOGENFREE
REVERSE
BREAKDOWN
VOLTAGE
at
TJ = 25 °C,
IT = 1 mA
VBR
(V)
VBR
(V)
MIN.
MAX.
6.4
7.0
STAND-OFF
VOLTAGE
REVERSE
CURRENT
at
VRWM
PEAK
PULSE
CURRENT
tp =
10/1000 μs
REVERSE
CLAMPING
VOLTAGE
at
IPPM
CAP.
at
VR = 0 V,
f = 1 MHz
PROTECTION
PATHS
VRWM
(V)
IR
(μA)
IPPM
(A)
VC MAX.
(V)
CD TYP.
(pF)
Nchannel
5.00
5
42.95
8.9
2095
1
VTVS5V0ASMF
905
VTVS8V5ASMF
915
9.5
10.5
8.50
0.1
28.24
13.5
1270
1
VTVS9V4ASMF
925
10.5
11.6
9.40
0.1
25.48
14.9
1130
1
VTVS10ASMF
935
11.4
12.7
10.30
0.05
23.20
16.3
988
1
VTVS11ASMF
945
12.6
13.9
11.20
0.05
21.13
18.0
910
1
VTVS12ASMF
955
14.0
15.4
12.40
0.05
19.01
20.1
807
1
VTVS14ASMF
965
15.4
17.0
13.80
0.05
17.16
22.2
752
1
VTVS15ASMF
975
17.1
18.8
15.10
0.05
15.47
25
684
1
VTVS17ASMF
985
19.0
21.0
16.90
0.05
13.79
28
606
1
VTVS19ASMF
995
20.9
23.2
18.70
0.05
12.44
31
558
1
VTVS21ASMF
9A5
23.0
25.4
20.50
0.05
11.33
34
513
1
VTVS23ASMF
9B5
25.7
28.4
22.60
0.05
10.09
38
480
1
VTVS25ASMF
9C5
28.5
31.5
25.20
0.05
9.07
42
433
1
VTVS28ASMF
9D5
31.4
34.7
27.90
0.05
8.21
47
412
1
VTVS31ASMF
9E5
34.2
37.8
30.60
0.05
7.51
51
380
1
VTVS33ASMF
9F5
37.1
41.0
33.30
0.05
6.91
55
379
1
VTVS36ASMF
9G5
40.9
45.2
36.00
0.05
6.24
61
342
1
VTVS40ASMF
9H5
44.7
49.4
39.60
0.05
5.70
67
309
1
VTVS43ASMF
9J5
48.5
53.6
43.20
0.05
5.23
73
292
1
VTVS47ASMF
9K5
53.2
58.8
46.80
0.05
4.76
80
293
1
VTVS52ASMF
9L5
58.9
65.1
52.20
0.05
4.28
89
242
1
VTVS58ASMF
9M5
64.6
71.4
57.60
0.05
3.89
98
245
1
VTVS63ASMF
9N5
70.8
78.2
63.00
0.05
3.54
108
227
1
Rev. 1.0, 15-Dec-15
Document Number: 85891
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VTVS5V0ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYPE
CODE
PART
NUMBER
HALOGENFREE
REVERSE
BREAKDOWN
VOLTAGE
at
TJ = 25 °C,
IT = 1 mA
VBR
(V)
VBR
(V)
MIN.
MAX.
6.57
6.84
STAND-OFF
VOLTAGE
REVERSE
CURRENT
at
VRWM
PEAK
PULSE
CURRENT
tp =
10/1000 μs
REVERSE
CLAMPING
VOLTAGE
at
IPPM
CAP.
at
VR = 0 V,
f = 1 MHz
PROTECTION
PATHS
VRWM
(V)
IR
(μA)
IPPM
(A)
VC MAX.
(V)
CD TYP.
(pF)
Nchannel
5.00
5
43.99
8.9
2095
1
VTVS5V0GSMF
902
VTVS8V5GSMF
912
9.80
10.20
8.50
0.1
29.10
13.5
1270
1
VTVS9V4GSMF
922
10.83
11.28
9.40
0.1
26.23
14.9
1130
1
VTVS10GSMF
932
11.81
12.30
10.30
0.05
23.98
16.3
988
1
VTVS11GSMF
942
12.99
13.52
11.20
0.05
21.75
18.0
910
1
VTVS12GSMF
952
14.41
15.00
12.40
0.05
19.53
20.1
807
1
VTVS14GSMF
962
15.88
16.53
13.80
0.05
17.67
22.2
752
1
VTVS15GSMF
972
17.60
18.31
15.10
0.05
15.89
25
684
1
VTVS17GSMF
982
19.60
20.40
16.90
0.05
14.21
28
606
1
VTVS19GSMF
992
21.61
22.50
18.70
0.05
12.84
31
558
1
VTVS21GSMF
9A2
23.72
24.69
20.50
0.05
11.67
34
513
1
VTVS23GSMF
9B2
26.51
27.60
22.60
0.05
10.40
38
480
1
VTVS25GSMF
9C2
29.40
30.60
25.20
0.05
9.35
42
433
1
VTVS28GSMF
9D2
32.39
33.72
27.90
0.05
8.45
47
412
1
VTVS31GSMF
9E2
35.28
36.72
30.60
0.05
7.74
51
380
1
VTVS33GSMF
9F2
38.27
39.84
33.30
0.05
7.11
55
379
1
VTVS36GSMF
9G2
42.19
43.92
36.00
0.05
6.43
61
342
1
VTVS40GSMF
9H2
46.11
48.00
39.60
0.05
5.87
67
309
1
VTVS43GSMF
9J2
50.03
52.08
43.20
0.05
5.39
73
292
1
VTVS47GSMF
9K2
54.88
57.12
46.80
0.05
4.90
80
293
1
VTVS52GSMF
9L2
60.76
63.24
52.20
0.05
4.41
89
242
1
VTVS58GSMF
9M2
66.64
69.36
57.60
0.05
4.01
98
245
1
VTVS63GSMF
9N2
73.01
75.99
63.00
0.05
3.65
108
227
1
Rev. 1.0, 15-Dec-15
Document Number: 85891
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VTVS5V0ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
110
500
400
300
10000
Rise time 10 µs to 100 %
100
90
200
80
1st line
2nd line
60
1000 µs to 50 %
50
30
50
40
30
20
20
40
100
..25..
..28..
..31..
..33..
..36..
..40..
..43..
..47..
..52..
..58..
..63..
100
10
0
0
1000
10
0.01 %
10
3000
2000
t (µs)
2nd line
22881
0.1 %
Axis Title
10000
120
100
10
1000
100
2nd line
VC (V)
ZthJL: Junction to lead
(infinite heat sink - leads
clamped between big
copper blocks)
VTVS63ASMF
..58..
..52..
..47..
..43..
..40..
..36..
..33..
.31..
80
1st line
2nd1st
lineline
2nd line
2nd line
Zth - Thermal Impedance (K/W)
100 %
Axis Title
10000
ZthJA: Junction to
ambient (Diode
soldered on PCB with
minimal foot print)
1
10 %
Fig. 4 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 1 - 10/1000 μs Peak Pulse Current Wave Form
100
1%
VR (V) in % of the Max. Working Voltage VRWM
2nd line
22863_2
60
40
1000
1st line
2nd line
2nd line
IRSM (%)
70
2nd line
CD (pF)
1000
.28..
.25..
100
20
0.1
0.0001 0.001
10
0.01
0.1
1
10
tp - Pulse Width (s)
2nd line
22861
0
100
10
0
2
4
6
10
12
14
IPP (A)
2nd line
22862_01
Fig. 2 - Thermal Impedance vs. Time
8
Fig. 5 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Axis Title
3000
10000
45
..5V0..
40
..8V5..
..21..
..19..
..17..
..15..
..14..
..12..
..11..
..10....9V4..
..8V5..
30
500
400
300
200
100
0.01 %
2nd line
VC (V)
2nd line
CD (pF)
..23..
35
1000
22863_1
VTVS25ASMF
..9V4..
..10..
..11..
..12..
..14..
..15..
..17..
..19..
..21..
..23..
0.1 %
20
15
10
100
..5V0..
5
0
1%
10 %
100 %
VR (V) in % of the Max. Working Voltage VRWM
2nd line
2nd line
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Rev. 1.0, 15-Dec-15
25
1000
1st line
2nd line
2000
10
0
22862_02
10
20
30
40
50
60
IPP (A)
2nd line
Fig. 6 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Document Number: 85891
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VTVS5V0ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SMF
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.1(0.003)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
1.7 (0.067)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
Rev. 1.0, 15-Dec-15
Document Number: 85891
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VTVS5V0ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters (inches)
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 1.0, 15-Dec-15
Document Number: 85891
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VTVS5V0ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
ORIENTATION IN CARRIER TAPE - SMF
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev. 1.0, 15-Dec-15
Document Number: 85891
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000