http://www.elm-tech.com GD25Q41B DATASHEET GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com - Content 1. FEATURES Page ------------------------------------------------------------------------------------------------- 2. GENERAL DESCRIPTION 4 ----------------------------------------------------------------------------- 5 -------------------------------------------------------------------------- 6 4. DEVICE OPERATION ---------------------------------------------------------------------------------- 7 5. DATA PROTECTION ------------------------------------------------------------------------------------ 8 6. STATUS REGISTER ------------------------------------------------------------------------------------- 10 3. MEMORY ORGANIZATION 7. COMMANDS DESCRIPTION Table of ID Definition ------------------------------------------------------------------------- 11 --------------------------------------------------------------------------------------- 14 7.1. Write Enable (WREN) (06H) ----------------------------------------------------------------------- 15 7.2. Write Disable (WRDI) (04H) ----------------------------------------------------------------------- 15 7.3. Write Enable for Volatile Status Register (50H) -------------------------------------------------- 15 ----------------------------------------------------- 16 7.5. Write Status Register (WRSR) (01H) -------------------------------------------------------------- 16 7.6. Write Status Register (WRSR) (31H) ------------------------------------------------------------- 17 -------------------------------------------------------------------- 18 7.4. Read Status Register (RDSR) (05H or 35H) 7.7. Read Data Bytes (READ) (03H) 7.8. Read Data Bytes at Higher Speed (Fast Read) (0BH) ------------------------------------------- 18 7.9. Dual Output Fast Read (3BH) ---------------------------------------------------------------------- 19 7.10. Quad Output Fast Read (6BH) ---------------------------------------------------------------------- 20 7.11. Dual I/O Fast Read (BBH) ------------------------------------------------------------------------- 20 7.12. Quad I/O Fast Read (EBH) ------------------------------------------------------------------------- 21 7.13. Quad I/O Word Fast Read (E7H) ------------------------------------------------------------------ 23 7.14. Set Burst with Wrap (77H) -------------------------------------------------------------------------- 24 7.15. Page Program (PP) (02H) --------------------------------------------------------------------------- 25 7.16. Sector Erase (SE) (20H) ----------------------------------------------------------------------------- 26 7.17. 32KB Block Erase (BE) (52H) --------------------------------------------------------------------- 26 7.18. 64KB Block Erase (BE) (D8H) --------------------------------------------------------------------- 27 -------------------------------------------------------------------------- 28 --------------------------------------------------------------------- 28 7.19. Chip Erase (CE) (60/C7H) 7.20. Deep Power-Down (DP) (B9H) 7.21. Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH) 29 7.22. Read Manufacture ID/Device ID (REMS) (90H) ------------------------------------------------- 30 7.23. Read Manufacture ID/Device ID Dual I/O (92H) ------------------------------------------------ 31 7.24. Read Manufacture ID/Device ID Quad I/O (94H) ----------------------------------------------- 32 ------------------------------------------------------------------ 33 7.25. Read Identification (RDID) (9FH) 7.26. High Performance Mode (HPM) (A3H) ----------------------------------------------------------46 - 2 33 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.27. Erase Security Registers (44H) ---------------------------------------------------------------------- 34 ------------------------------------------------------------------ 35 ---------------------------------------------------------------------- 35 7.28. Program Security Registers (42H) 7.29. Read Security Registers (48H) 7.30. Continuous Read Mode Reset (CRMR) (FFH) --------------------------------------------------- 36 7.31. Program/Erase Suspend (PES) (75H) -------------------------------------------------------------- 37 7.32. Program/Erase Resume (PER) (7AH) -------------------------------------------------------------- 37 --------------------------------------------------------------- 38 ------------------------------------------------------------------------------------- 38 ---------------------------------------------------------------------------------- 38 8. ELECTRICAL CHARACTERISTICS 8.1. Power-ON timing 8.2. Initial delivery state 8.3. Data retention and endurance 8.4. Latch up characteristics ----------------------------------------------------------------------- 38 ----------------------------------------------------------------------------- 38 ------------------------------------------------------------------------- 39 8.5. Absolute maximum ratings 8.6. Capacitance measurement conditions ------------------------------------------------------------- 39 8.7. DC characteristics ----------------------------------------------------------------------------------- 40 8.8. AC characteristics ----------------------------------------------------------------------------------- 41 9. ORDERING INFORMATION ------------------------------------------------------------------------- 43 10. PACKAGE INFORMATION --------------------------------------------------------------------------- 44 10.1. Package SOP8 150MIL ---------------------------------------------------------------------------- 44 10.2. Package SOP8 208MIL ---------------------------------------------------------------------------- 45 ----------------------------------------------------------------------- 46 10.3. Package USON8 (3x2MM) 46 - 3 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 1. FEATURES ♦ 4M-bit Serial Flash ♦ Program/Erase Speed - 512K-byte - 256 bytes per programmable page ♦ Standard, Dual, Quad SPI - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 ♦ High Speed Clock Frequency - 104MHz for fast read with 30PF load - Dual I/O Data transfer up to 208Mbits/s - Quad I/O Data transfer up to 416Mbits/s ♦ Software/Hardware Write Protection - Write protect all/portion of memory via software - Enable/Disable protection with WP# pin - Top or Bottom, Sector or Block selection - Page Program time: 0.35ms typical - Sector Erase time: 50ms typical - Block Erase time: 0.18/0.25s typical - Chip Erase time: 1.5s typical ♦ Flexible Architecture - Sector of 4K-byte - Block of 32/64K-byte ♦ Low Power Consumption - 20mA maximum active current - 5μA maximum power down current ♦ Single Power Supply Voltage - Full voltage range: 2.7~3.6V ♦ Minimum 100,000 Program/Erase Cycles ♦ Advanced security Features - Power Supply Lock-Down - 3×512-Byte Security Registers With OTP Locks - Volatile and Non-volatile Status Register Bits 46 - 4 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 2. GENERAL DESCRIPTION The GD25Q41B Serial flash supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz for Dual Output & Dual I/O read command, and 416MHz for Quad output & Quad I/O read command. Connection Diagram 8-LEAD SOP 8-LEAD USON Pin Description Pin Name I/O Description CS# SO (IO1) WP# (IO2) I I/O I/O Chip Select Input Data Output (Data Input Output 1) Write Protect Input (Data Input Output 2) VSS SI (IO0) I/O Ground Data Input (Data Input Output 0) SCLK I HOLD# (IO3) VCC I/O Serial Clock Input Hold Input (Data Input Output 3) Power Supply Block Diagram Write Control Logic Status Register HOLD#(IO3) SCLK CS# SPI Command & Control Logic High Voltage Generators Page Address Latch/Counter Write Protect Logic and Row Decode WP#(IO2) Flash Memory Column Decode And 256-Byte Page Buffer SI(IO0) SO(IO1) Byte Address Latch/Counter 46 - 5 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 3. MEMORY ORGANIZATION GD25Q41B Each device has Each block has Each sector has Each page has 512K 64/32K 4K 256 bytes 2K 256/128 16 - pages 128 16/8 - - sectors 8/16 - - - blocks Uniform Block Sector Architecture GD25Q41B 64K Bytes Block Sector Architecture Block Sector 7 127 ----112 6 111 ----96 ----- Address range 07F000H ----- 07FFFFH ----- 070000H 06F000H 070FFFH 06FFFFH ----060000H ----- ----060FFFH ----- ----- ------------- ------------- ------------- ----- --------47 --------02F000H --------02FFFFH 2 ----32 ----020000H ----020FFFH 31 01F000H 01FFFFH ----16 ----010000H ----010FFFH 15 ----0 00F000H ----000000H 00FFFFH ----000FFFH 1 0 46 - 6 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 4. DEVICE OPERATION SPI Mode Standard SPI The GD25Q41B feature a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK. Dual SPI The GD25Q41B supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast Read” (3BH and BBH) commands. These commands allow data to be transferred to or from the device at two times the rate of the standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1. Quad SPI The GD25Q41B supports Quad SPI operation when using the “Quad Output Fast Read”, “Quad I/O Fast Read”, “Quad I/O Word Fast Read”, “Quad Page Program” (6BH, EBH, E7H, 32H). These commands allow data to be transferred to or from the device at four times the rate of the standard SPI. When using the Quad SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3. Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status Register to be set. Hold The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation of write status register, programming, or erasing in progress. The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising edge of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low). The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high during HOLD operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at high and then CS# must be at low. Figure 1. Hold Condition CS# SCLK HOLD# HOLD HOLD 46 - 7 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 5. DATA PROTECTION The GD25Q41B provides the following data protection methods: ♦ Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will return to reset by the following situation: - Power-Up - Write Disable (WRDI) - Write Status Register (WRSR) - Page Program (PP) - Sector Erase (SE) - Block Erase (BE) - Chip Erase (CE) - Erase Security Register - Program Security Register ♦ Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1, BP0) bits define the section of the memory array that can be read but not change. ♦ Hardware Protection Mode: WP# going low to protected the BP0~BP4 bits and SRP0~1 bits. ♦ Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep Power-Down Mode command. Table1.0 GD25Q41B Protected area size (CMP=0) Status Register Content BP4 BP3 BP2 BP1 BP0 × × 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 0 1 1 0 1 0 0 1 0 1 0 1 0 0 1 0 1 1 0 × 1 × × 1 0 0 0 1 1 0 0 1 0 1 0 0 1 1 1 0 1 0 × 1 0 1 1 0 1 1 0 0 1 1 1 0 1 0 1 1 0 1 1 1 1 1 0 × 1 1 1 1 0 1 × 1 1 1 Memory Content Blocks NONE 7 6 and 7 4 to 7 0 0 and 1 0 to 3 0 to 7 7 7 7 7 7 0 0 0 0 0 0 to 7 Addresses NONE 070000H-07FFFFH 060000H-07FFFFH 040000H-07FFFFH 000000H-00FFFFH 000000H-01FFFFH 000000H-03FFFFH 000000H-07FFFFH 07F000H-07FFFFH 07E000H-07FFFFH 07C000H-07FFFFH 078000H-07FFFFH 078000H-07FFFFH 000000H-000FFFH 000000H-001FFFH 000000H-003FFFH 000000H-007FFFH 000000H-007FFFH 000000H-07FFFFH 46 - 8 Density NONE 64KB 128KB 256KB 64KB 128KB 256KB 512KB 4KB 8KB 16KB 32KB 32KB 4KB 8KB 16KB 32KB 32KB 512KB Portion NONE Upper 1/8 Upper 1/4 Upper 1/2 Lower 1/8 Lower 1/4 Lower 1/2 ALL Top Block Top Block Top Block Top Block Top Block Bottom Block Bottom Block Bottom Block Bottom Block Bottom Block ALL Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Table1.0(a). GD25Q41B Protected area size (CMP=1) Status Register Content BP4 BP3 BP2 BP1 BP0 × × 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 0 1 1 0 1 0 0 1 0 1 0 1 0 0 1 0 1 1 0 × 1 × × 1 0 0 0 1 1 0 0 1 0 1 0 0 1 1 1 0 1 0 × 1 0 1 1 0 1 1 0 0 1 1 1 0 1 0 1 1 0 1 1 1 1 1 0 × 1 1 1 1 0 1 × 1 1 1 Memory Content Blocks 0 to 7 0 to 6 0 to 5 0 to 3 1 to 7 2 to 7 4 to 7 NONE 0 to 7 0 to 7 0 to 7 0 to 7 0 to 7 0 to 7 0 to 7 0 to 7 0 to 7 0 to 7 NONE Addresses 000000H-07FFFFH 000000H-06FFFFH 000000H-05FFFFH 000000H-03FFFFH 010000H-07FFFFH 020000H-07FFFFH 040000H-07FFFFH NONE 000000H-07EFFFH 000000H-07DFFFH 000000H-07BFFFH 000000H-077FFFH 000000H-077FFFH 001000H-07FFFFH 002000H-07FFFFH 004000H-07FFFFH 008000H-07FFFFH 008000H-07FFFFH NONE 46 - 9 Density 512KB 448KB 384KB 256KB 448KB 384KB 256KB NONE 508KB 504KB 496KB 480KB 480KB 508KB 504KB 496KB 480KB 480KB NONE Portion ALL Lower 7/8 Lower 3/4 Lower 1/2 Upper 7/8 Upper 3/4 Upper 1/2 NONE Lower 127/128 Lower 63/64 Lower 31/32 Lower 15/16 Lower 15/16 Upper 127/128 Upper 63/64 Upper 31/32 Upper 15/16 Upper 15/16 NONE Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 6. STATUS REGISTER S15 SUS S14 CMP S13 LB3 S12 LB2 S11 LB1 S10 HPF S9 QE S8 SRP1 S7 SRP0 S6 BP4 S5 BP3 S4 BP2 S3 BP1 S2 BP0 S1 WEL S0 WIP The status and control bits of the Status Register are as follows: WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress. When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0, means the device is not in program/erase/write status register progress. WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase command is accepted. BP4, BP3, BP2, BP1, BP0 bits. The Block Protect (BP4, BP3, BP2, BP1, BP0) bits are non-volatile (Default Value is 0). They define the size of the area to be software protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in Table1). becomes protected against Page Program (PP), Sector Erase (SE) and Block Erase (BE) commands. The Block Protect (BP4, BP3, BP2, BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. The Chip Erase (CE) command is executed, if the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to “None protected”. SRP1, SRP0 bits. The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP bits control the method of write protection: software protection, hardware protection, power supply lockdown or one time programmable protection. SRP1 SRP0 #WP Status Register Description 0 0 × Software Protected WP# pin has no control. The Status Register can be written to after a Write Enable command, WEL=1.(Default) 0 1 0 Hardware Protected When WP# pin is low the Status Register locked and can not be written to. 0 1 1 Hardware Unprotected When WP# pin is high the Status Register is unlocked and can be written to after a Write Enable command, WEL=1. Power Supply Status Register is protected and can not be written to again until the next Power-Down, Power-Up cycle. Lock-Down(1) 1 1 × One Time Program(2) Status Register is permanently protected and can not be written to. NOTE: (1). When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state. (2). This feature is available on special order. Please contact ELM for details. 1 0 × 46 - 10 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com QE bit. The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI operation if the WP# or HOLD# pins are tied directly to the power supply or ground). HPF bit. The High Performance Flag (HPF) bit indicates the status of High Performance Mode (HPM). When HPF bit sets to 1, it means the device is in High Performance Mode, when HPF bit sets 0 (default), it means the device is not in High Performance Mode. LB3, LB2, LB1, bits. The LB3, LB2, LB1, bits are non-volatile One Time Program (OTP) bits in Status Register (S13-S11) that provide the write protect control and status to the Security Registers. The default state of LB3-LB1 are 0, the security registers are unlocked. The LB3-LB1 bits can be set to 1 individually using the Write Register instruction. The LB3-LB1 bits are One Time Programmable, once its set to 1, the Security Registers will become read-only permanently. CMP bit. The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction the BP4BP0 bits to provide more flexibility for the array protection. Please see the Status registers Memory Protection table for details. The default setting is CMP=0. SUS bit. The SUS bit is read only bit in the status register (S15) that is set to 1 after executing an Erase/Program Suspend (75H) command. The SUS bit is cleared to 0 by Erase/Program Resume (7AH) command as well as a power-down, power-up cycle. 7. COMMANDS DESCRIPTION All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, most significant bit first on SI, each bit being latched on the rising edges of SCLK. See Table2, every command sequence starts with a one-byte command code. Depending on the command, this might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the command sequence has been shifted in. For the command of Read, Fast Read, Read Status Register or Release from Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a dataout sequence. CS# can be driven high after any bit of the data-out sequence is being shifted out. For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the command is rejected, and is not executed. That is CS# must driven high when the number of clock pulses after CS# being driven low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not be reset. 46 - 11 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Table2. Commands Command Name Byte 1 Byte 2 Write Enable Write Disable Volatile SR Write Enable Read Status Register Read Status Register-1 Write Status Register Write Status Register-1 Read Data Fast Read Dual Output Fast Read 06H 04H 50H 05H 35H 01H 31H 03H 0BH 3BH (S7-S0) (S15-S8) (S7-S0) (S15-S8) A23-A16 A23-A16 A23-A16 Dual I/O Fast Read BBH A23-A8 (3) Quad Output Fast Read 6BH Quad I/O Fast Read EBH A23-A16 A23-A0 M7-M0 (5) A23-A0 M7-M0 (5) Byte 3 Byte 4 Byte 5 Byte 6 (continuous) (continuous) (S15-S8) (1) A15-A8 A15-A8 A15-A8 A7-A0 M7-M0 (3) A15-A8 n-Bytes A7-A0 A7-A0 A7-A0 (D7-D0) (Next byte) (continuous) dummy (D7-D0) (continuous) dummy D7-D0 (2) (continuous) (D7-D0) (2) A7-A0 (continuous) dummy (D7-D0) (4) (continuous) dummy (6) (D7-D0) (4) (continuous) dummy (7) (D7-D0) (4) (continuous) A15-A8 A15-A8 A15-A8 A15-A8 A15-A8 A7-A0 A7-A0 A7-A0 A7-A0 A7-A0 dummy dummy dummy (DID7DID0) 90H dummy dummy 00H (MID7MID0) 92H A23-A8 Manufacturer/Device ID by Quad I/O 94H A23-A0, M7-M0 Read Identification 9FH (M7-M0) Quad I/O Word Fast Read (8) Continuous Read Reset Page Program Quad Page Program Sector Erase Block Erase (32K) Block Erase (64K) Chip Erase E7H FFH 02H 32H 20H 52H D8H C7/60H A23-A16 A23-A16 A23-A16 A23-A16 A23-A16 Set Burst with Wrap 77H dummy (10) W7-W0 Program/Erase Suspend Program/Erase Resume Deep Power-Down Release From Deep Power-Down, And Read Device ID 75H 7AH B9H Release From Deep Power-Down Manufacturer/ Device ID Manufacturer/Device ID by Dual I/O ABH D7-D0 D7-D0 (4) Next byte (continuous) ABH A7-A0, (MID7-MID0) M7-M0 (DID7-DID0 (11) dummy (MID7- MID0) (DID7-DID0) (JDID15(JDID7JDID8) JDID0) 46 - 12 (DID7DID0) (continuous) (continuous) (continuous) (continuous) Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Command Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 High Performance Mode Erase Security Registers (9) Program Security Registers (9) Read Security Registers (9) A3H dummy dummy dummy 44H A23-A16 A15-A8 A7-A0 42H A23-A16 A15-A8 A7-A0 (D7-D0) (D7-D0) 48H A23-A16 A15-A8 A7-A0 dummy (D7-D0) n-Bytes NOTE: (1) Write Status Register (01H) Normally, Write Status Register (01H) is used to write both lower status register and higher status register; However, if CS# goes up at the eighth bit of the data byte, the data byte would be written as lower byte of status register, without changing the higher byte of status register. (2) Dual Output data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) (3) Dual Input Address IO0 = A22, A20, A18, A16, A14, A12, A10, A8 IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A6, A4, A2, A0, M6, M4, M2, M0 A7, A5, A3, A1, M7, M5, M3, M1 (4) Quad Output Data IO0 = (D4, D0, …..) IO1 = (D5, D1, …..) IO2 = (D6, D2, …..) IO3 = (D7, D3,…..) (5) Quad Input Address IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO3 = A23, A19, A15, A11, A7, A3, M7, M3 (6) Fast Read Quad I/O Data IO0 = (x, x, x, x, D4, D0,…) IO1 = (x, x, x, x, D5, D1,…) IO2 = (x, x, x, x, D6, D2,…) IO3 = (x, x, x, x, D7, D3,…) 46 - 13 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com (7) Fast Word Read Quad I/O Data IO0 = (x, x, D4, D0,…) IO1 = (x, x, D5, D1,…) IO2 = (x, x, D6, D2,…) IO3 = (x, x, D7, D3,…) (8) Fast Word Read Quad I/O Data: the lowest address bit must be 0. (9) Security Registers Address: Security Register1: A23-A16=00H, A15-A9=0001000b, A8-A0= Byte Address; Security Register2: A23-A16=00H, A15-A9=0010000b, A8-A0= Byte Address; Security Register3: A23-A16=00H, A15-A9=0011000b, A8-A0= Byte Address. (10) Dummy bits and Wrap Bits IO0 = (x, x, x, x, x, x, W4, x) IO1 = (x, x, x, x, x, x, W5, x) IO2 = (x, x, x, x, x, x, W6, x) IO3 = (x, x, x, x, x, x, W7, x) (11) Address, Continuous Read Mode bits, Dummy bits, Manufacture ID and Device ID IO0 = (A20, A16, A12, A8, A4, A0, M4, M0, x, x, x, x, MID4, MID0, DID4, DID0, …) IO1 = (A21, A17, A13, A9, A5, A1, M5, M1, x, x, x, x, MID5, MID1, DID5, DID1, …) IO2 = (A22, A18, A14, A10, A6, A2, M6, M2, x, x, x, x, MID6, MID2, DID6, DID2, …) IO3 = (A23, A19, A15, A11, A7, A3, M7, M3, x, x, x, x, MID7, MID3, DID7, DID3, …) Table of ID Definitions: GD25Q41B Operation Code M7-M0 ID15-ID8 ID7-ID0 9FH 90H C8 C8 40 13 12 ABH 12 46 - 14 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.1. Write Enable (WREN)(06H) The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE) and Write Status Register (WRSR), Program Security Register, Erase Security Register command. The Write Enable (WREN) command sequence: CS# goes low → sending the Write Enable command → CS# goes high. Figure 2. Write Enable Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 Command SI 06H High-Z SO 7.2. Write Disable (WRDI) (04H) The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command sequence: CS# goes low → Sending the Write Disable command → CS# goes high. The WEL bit is reset by following condition: Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase, Chip Erase, Program Security Register, Erase Security Register commands. Figure 3. Write Disable Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 Command SI 04H High-Z SO 7.3. Write Enable for Volatile Status Register (50H) The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical nonvolatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write Enable for Volatile Status Register command must be issued prior to a Write Status Register command. The Write Enable for Volatile Status Register command will not set the Write Enable Latch bit, it is only valid for the Write Status Register command to change the volatile Status Register bit values. 46 - 15 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 4. Write Enable for Volatile Status Register Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 Command(50H) SI SO High-Z 7.4. Read Status Register (RDSR) (05H or 35H) The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new command to the device. It is also possible to read the Status Register continuously. For command code “05H”, the SO will output Status Register bits S7~S0. The command code “35H”, the SO will output Status Register bits S15~S8. Figure 5. Read Status Register Sequence Diagram CS# SCLK SI SO 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Command 05H or 35H High-Z 7 S7~S0 or S15~S8 out 6 5 4 3 2 1 0 MSB 7 S7~S0 or S15~S8 out 6 5 4 3 2 1 0 7 MSB 7.5. Write Status Register (WRSR) (01H) The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register (WRSR) (01H) command has no effect on S15, S10, S1 and S0 of the Status Register. CS# must be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write Status Register (WRSR) command is not executed. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset. To write non-volatile Status Register bits, a standard Write Enable (06H) instruction must previously have been executed for the device to accept the Write Status Register Instruction. Once write enabled, the instruction is entered by driving CS# low, sending the instruction code “01H”, and then writing the status register data byte. 46 - 16 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0). However, SRP1 and LB3, LB2, LB1 can not be changed from 1 to 0 because of the OTP protection for these bits. Upon power off, the volatile Status Register bit values will be lost, and the non-volatile Status Register bit values will be restored when power on again. The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP3, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is not executed once the Hardware Protected Mode is entered. Figure 6. Write Status Register Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 7 6 Command SI 01H SO Status Register in MSB 5 4 3 2 1 0 15 14 13 12 11 10 9 8 High-Z 7.6. Write Status Register (WRSR) (31H) The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register (WRSR) command (31H) has no effect on S15 and S10 of the Status Register. CS# must be driven high after the eighth bit of the data byte has been latched in. If not, the Write Status Register (WRSR) command is not executed. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset. To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have been executed for the device to accept the Write Status Register Instruction. Once write enabled, the instruction is entered by driving CS# low, sending the instruction code “31h”, and then writing the status register data byte. To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0). However, SRP1 and LB3, LB2, LB1 can not be changed from 1 to 0 because of the OTP protection for these bits. Upon power off, the volatile Status Register bit values will be lost, and the non-volatile Status Register bit values will be restored when power on again. The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in 46 - 17 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Table1. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is not executed once the Hardware Protected Mode is entered. Figure 7. Write Status Register Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 7 8 Command SI 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Status Register in 31H 15 14 13 12 11 10 9 8 MSB SO High-Z 7.7. Read Data Bytes (READ) (03H) The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fR, during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 8. Read Data Bytes Sequence Diagram CS# SCLK SI SO 0 1 2 3 4 5 6 7 8 Command 03H High-Z 9 10 28 29 30 31 32 33 34 35 36 37 38 39 24-bit address 23 22 21 3 2 1 0 MSB MSB 7 6 5 Data Out1 4 3 2 1 Data Out2 0 7.8. Read Data Bytes at Higher Speed (Fast Read) (0BH) The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. 46 - 18 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 9. Read Data Bytes at Higher Speed Sequence Diagram 7.9. Dual Output Fast Read (3BH) The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence is shown in followed Figure10. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 10. Dual Output Fast Read Sequence Diagram 46 - 19 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.10. Quad Output Fast Read (6BH) The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The command sequence is shown in followed Figure11. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 11. Quad Output Fast Read Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 7 8 9 10 Command SI(IO0) 24-bit address 6BH High-Z WP#(IO2) High-Z HOLD#(IO3) High-Z SCLK 3 23 22 21 SO(IO1) CS# 28 29 30 31 2 1 0 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Dummy Clocks SI(IO0) 4 0 4 0 4 0 4 0 4 SO(IO1) 5 1 5 1 5 1 5 1 5 WP#(IO2) 6 2 6 2 6 2 6 2 6 HOLD#(IO3) 7 3 7 3 7 3 7 3 7 Byte1 Byte2 Byte3 Byte4 7.11. Dual I/O Fast Read (BBH) The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence is shown in followed Figure12. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. To ensure optimum performance the High Performance Mode (HPM) command (A3H) must be executed once, prior to the Dual I/O Fast Read command. Dual I/O Fast Read with “Continuous Read Mode” The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. The command sequence is shown in followed Figure13. If the “Continuous Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first BBH command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. 46 - 20 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 12. Dual I/O Fast Read Sequence Diagram (M7-0 = 0XH or not AXH) CS# 0 SCLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 Command SI(IO0) BBH SO(IO1) A23-16 A15-8 A7-0 M7-0 CS# SCLK 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 SI(IO0) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 SO(IO1) 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte1 Byte2 Byte3 Byte4 Figure 13. Dual I/O Fast Read Sequence Diagram (M7-0 = AXH) CS# SCLK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 6 4 2 0 6 4 2 0 6 4 2 0 6 5 3 1 7 5 3 1 7 5 3 1 7 7 A23-16 A15-8 A7-0 4 2 0 5 3 1 M7-0 CS# SCLK 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SI(IO0) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 SO(IO1) 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte1 Byte2 Byte3 Byte4 7.12. Quad I/O Fast Read (EBH) The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO3, IO4, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The command sequence is shown in followed Figure14. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must 46 - 21 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com be set to enable for the Quad I/O Fast read command. To ensure optimum performance the High Performance Mode (HPM) command (A3H) must be executed once, prior to the Quad I/O Fast Read command. Quad I/O Fast Read with “Continuous Read Mode” The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. The command sequence is shown in followed Figure15. If the “Continuous Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first EBH command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. Figure 14. Quad I/O Fast Read Sequence Diagram (M7-0 = 0XH or not AXH) CS# 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 4 0 4 0 4 0 4 0 4 0 4 0 4 SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7 0 SCLK 1 2 3 4 5 6 7 Command SI(IO0) EBH A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Figure 15. Quad I/O Fast Read Sequence Diagram (M7-0 = AXH) CS# 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 SI(IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4 SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7 SCLK A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode The Quad I/O Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with Wrap” (77H) commands prior to EBH. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap Around” feature for the following EBH commands. When “Wrap Around” is enabled, the data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page. The output data 46 - 22 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary automatically until CS# is pulled high to terminate the command. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap” command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-W5 is used to specify the length of the wrap around section within a page. 7.13. Quad I/O Word Fast Read (E7H) The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest address bit (A0) must equal 0 and only 2-dummy clock. The command sequence is shown in followed Figure16. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word Fast read command. To ensure optimum performance the High Performance Mode (HPM) command (A3h) must be executed once, prior to the Quad I/O Word Fast Read command. Quad I/O Word Fast Read with “Continuous Read Mode” The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not require the E7H command code. The command sequence is shown in followed Figure17. If the “Continuous Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first E7H command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. Figure 16. Quad I/O Word Fast Read Sequence Diagram (M7-0 = 0XH or not AXH) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 SCLK Command SI(IO0) E7H A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3 46 - 23 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 17. Quad I/O Word Fast Read Sequence Diagram (M7-0 = AXH) CS# 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 SI(IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 WP#(IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 HOLD#(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 SCLK A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3 Quad I/O Word Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode The Quad I/O Word Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with Wrap” (77H) commands prior to E7H. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap Around” feature for the following E7H commands. When “Wrap Around” is enabled, the data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page. The output data starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary automatically until CS# is pulled high to terminate the command. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap” command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-W5 is used to specify the length of the wrap around section within a page. 7.14. Set Burst with Wrap (77H) The Set Burst with Wrap command is used in conjunction with “Quad I/O Fast Read” and “Quad I/O Word Fast Read” command to access a fixed length of 8/16/32/64-byte section within a 256-byte page, in standard SPI mode. The Set Burst with Wrap command sequence: CS# goes low → Send Set Burst with Wrap command → Send 24 dummy bits → Send 8 bits “Wrap bits” → CS# goes high. W6, W5 W4=0 W4=1 (default) Wrap Around Wrap Length Wrap Around Wrap Length 0, 0 0, 1 Yes Yes 8-byte 16-byte No No N/A N/A 1, 0 1, 1 Yes Yes 32-byte 64-byte No No N/A N/A If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “Quad I/O Fast Read” and “Quad I/O Word Fast Read” command will use the W6-W4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with Wrap command should be issued to set W4=1. 46 - 24 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 18. Set Burst with Wrap Sequence Diagram CS# 8 9 10 11 12 13 14 15 x x x x x x 4 x SO(IO1) x x x x x x 5 x WP#(IO2) x x x x x x 6 x HOLD#(IO3) x x x x x x x x SCLK 0 1 2 3 4 5 6 7 Command SI(IO0) 77H W6-W4 7.15. Page Program (PP) (02H) The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The Page Program command sequence: CS# goes low → sending Page Program command → 3-byte address on SI → at least 1 byte data on SI→ CS# goes high. The command sequence is shown in Figure19. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Page Program (PP) command is not executed. As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) is not executed. 46 - 25 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 19. Page Program Sequence Diagram 7.16. Sector Erase (SE) (20H) The Sector Erase (SE) command is for erasing the all data of the chosen sector. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered by driving CS# low, followed by the command code, and 3-address byte on SI. Any address inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence. The Sector Erase command sequence: CS# goes low → sending Sector Erase command → 3-byte address on SI → CS# goes high. The command sequence is shown in Figure20. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bit (see Table1.) is not executed. Figure 20. Sector Erase Sequence Diagram CS# SCLK 0 1 SI 2 3 4 5 6 7 8 29 30 31 24 Bits Address Command 20H 9 23 22 MSB 2 1 0 7.17. 32KB Block Erase (BE) (52H) The 32KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI. 46 - 26 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Any address inside the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence. The 32KB Block Erase command sequence: CS# goes low → sending 32KB Block Erase command → 3-byte address on SI→ CS# goes high. The command sequence is shown in Figure21. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1.) is not executed. Figure 21. 32KB Block Erase Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 8 29 30 31 24 Bits Address Command SI 9 23 22 MSB 52H 2 1 0 7.18. 64KB Block Erase (BE) (D8H) The 64KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence. The 64KB Block Erase command sequence: CS# goes low → sending 64KB Block Erase command → 3-byte address on SI → CS# goes high. The command sequence is shown in Figure22. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1.) is not executed. Figure 22. 64KB Block Erase Sequence Diagram CS# SCLK SI 0 1 2 3 4 5 6 7 8 29 30 31 24 Bits Address Command D8H 9 23 22 MSB 46 - 27 2 1 0 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.19. Chip Erase (CE) (60/C7H) The Chip Erase (CE) command is for erasing the all data of the chip. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit The Chip Erase (CE) command is entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence. The Chip Erase command sequence: CS# goes low → sending Chip Erase command → CS# goes high. The command sequence is shown in Figure23. CS# must be driven high after the eighth bit of the command code has been latched in, otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the selftimed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is executed if the Block Protect (BP4,BP3,BP2, BP1, BP0) bits are set to “None protected”. The Chip Erase (CE) command is ignored if one or more sectors are protected. Figure 23. Chip Erase Sequence Diagram CS# SCLK SI 0 1 2 3 4 5 6 7 Command 60H or C7H 7.20. Deep Power-Down (DP) (B9H) Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode (the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program and Erase commands. Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle currently in progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by executing the Deep Power-Down (DP) command. Once the device has entered the Deep Power-Down Mode, all commands are ignored except the Release from Deep Power-Down and Read Device ID (RDI) command. This releases the device from this mode. The Release from Deep Power-Down and Read Device ID (RDI) command also allows the Device ID of the device to be output on SO. The Deep Power-Down Mode automatically stops at Power-Down, and the device always Power-Up in the Standby Mode. The Deep Power-Down (DP) command is entered by driving CS# low, followed by the command code on SI. CS# must be driven low for the entire duration of the sequence. The Deep Power-Down command sequence: CS# goes low → sending Deep Power-Down command → CS# goes high. The command sequence is shown in Figure24. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it requires a delay of tDP before the supply current is reduced to ICC2 and the Deep PowerDown Mode is entered. Any Deep Power-Down (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. 46 - 28 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 24. Deep Power-Down Sequence Diagram CS# SCLK tDP 0 1 2 3 4 5 6 7 Command SI Stand-by mode Deep Power-down mode B9H 7.21. Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH) The Release from Power-Down or High Performance Mode/Device ID command is a multi-purpose command. It can be used to release the device from the Power-Down state or High Performance Mode or obtain the devices electronic identification (ID) number. To release the device from the Power-Down state or High Performance Mode, the command is issued by driving the CS# pin low, shifting the instruction code “ABH” and driving CS# high as shown in Figure25. Release from Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other command are accepted. The CS# pin must remain high during the tRES1 time duration. When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure26. The Device ID value for the GD25Q41B is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The command is completed by driving CS# high. When used to release the device from the Power-Down state and obtain the Device ID, the command is the same as previously described, and shown in Figure26, except that after CS# is driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other command will be accepted. If the Release from Power-Down/Device ID command is issued while an Erase, Program or Write cycle is in process (when WIP equal 1) the command is ignored and will not have any effects on the current cycle. Figure 25. Release Power-Down Sequence or High Performance Mode Sequence Diagram CS# SCLK SI 0 1 2 3 4 5 6 7 t RES1 Command ABH Deep Power-down mode 46 - 29 Stand-by mode Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 26. Release Power-Down and Read Device ID Sequence Diagram 7.22. Read Manufacture ID/Device ID (REMS) (90H) The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down/Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID. The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure27. If the 24-bit address is initially set to 000001H, the Device ID will be read first. Figure 27. Read Manufacture ID/Device ID Sequence Diagram 46 - 30 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.23. Read Manufacture ID/Device ID Dual I/O (92H) The Read Manufacturer/Device ID Dual I/O command is an alternative to the Release from Power-Down/ Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by dual I/O. The command is initiated by driving the CS# pin low and shifting the command code “92H” followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure28. If the 24-bit address is initially set to 000001H, the Device ID will be read first. Figure 28. Read Manufacture ID/Device ID Dual I/O Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 6 4 2 0 6 5 3 1 7 Command SI(IO0) 92H SO(IO1) 7 A23-16 4 2 0 6 5 3 1 7 A15-8 4 2 0 6 5 3 1 7 A7-0 4 2 0 5 3 1 M7-0 CS# SCLK 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SI(IO0) 6 SO(IO1) 7 4 2 0 6 4 2 0 6 5 3 1 7 5 3 1 7 MFR ID Device ID 4 2 0 6 4 2 0 6 5 3 1 7 5 3 1 7 MFR ID (Repeat) Device ID (Repeat) 46 - 31 4 2 0 6 4 2 0 5 3 1 7 5 3 1 MFR ID (Repeat) Device ID (Repeat) Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.24. Read Manufacture ID/Device ID Quad I/O (94H) The Read Manufacturer/Device ID Quad I/O command is an alternative to the Release from Power-Down/ Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by quad I/O. The command is initiated by driving the CS# pin low and shifting the command code “94H” followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure29. If the 24-bit address is initially set to 000001H, the Device ID will be read first. Figure 29. Read Manufacture ID/Device ID Quad I/O Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 Command SI(IO0) 94H SO(IO1) WP#(IO2) HOLD#(IO3) A23-16 A15-8 A7-0 M7-0 Dummy MFR ID DID CS# SCLK 24 25 26 27 28 29 30 31 SI(IO0) 4 0 SO(IO1) 5 1 5 1 5 1 5 1 WP#(IO2) 6 2 6 2 6 2 6 2 HOLD#(IO3) 7 4 0 4 0 4 0 3 7 3 7 3 7 3 MFR ID DID MFR ID DID (Repeat)(Repeat)(Repeat)(Repeat) 46 - 32 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.25. Read Identification (RDID) (9FH) The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two bytes of device identification. The device identification indicates the memory type in the first byte, and the memory capacity of the device in the second byte. Any Read Identification (RDID) command while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be issued while the device is in Deep Power-Down Mode. The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is shifted in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data Output, each bit being shifted out during the falling edge of Serial Clock. The command sequence is shown in Figure30. The Read Identification (RDID) command is terminated by driving CS# to high at any time during data output. When CS# is driven high, the device is put in the Standby Mode. Once in the Standby Mode, the device waits to be selected, so that it can receive, decode and execute commands. Figure 30. Read Identification ID Sequence Diagram CS# 0 SCLK SI 1 2 3 4 5 6 8 9 10 11 12 13 14 15 7 6 9FH SO CS# 7 MSB Manufacturer ID 5 4 3 2 1 0 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCLK SI SO 7 Memory Type ID15-ID8 6 5 4 3 2 1 0 MSB 7 Capacity ID7-ID0 6 5 4 3 2 1 0 MSB 7.26. High Performance Mode (HPM) (A3H) The High Performance Mode (HPM) command must be executed prior to Dual or Quad I/O commands when operating at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows precharging of internal charge pumps so the voltages required for accessing the flash memory array are readily available. The command sequence: CS# goes low → Sending A3H command → Sending 3-dummy byte → CS# goes high. See Figure31. After the HPM command is executed, the device will maintain a slightly higher standby current (Icc8) than standard SPI operation. The Release from Power-Down or HPM command (ABH) can be used to return to standard SPI standby current (Icc1). In addition, Power-Down command (B9H) will also release the device from HPM mode back to deep power down state. 46 - 33 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure 31. High Performance Mode Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 7 8 Command SI 9 29 30 31 t HPM 3 Dummy Bytes 2 23 22 MSB A3H 1 0 SO High Performance Mode 7.27. Erase Security Registers (44H) The GD25Q41B provides three 512-byte Security Registers which can be erased and programmed individually. These registers may be used by the system manufacturers to store security and other important information separately from the main memory array. The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Erase Security Registers command sequence: CS# goes low → sending Erase Security Registers command → CS# goes high. The command sequence is shown in Figure32. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Erase Security Registers command is not executed. As soon as CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the Erase Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Security Registers Lock Bit (LB3-1) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security Registers will be permanently locked; the Erase Security Registers command will be ignored. Address A23-16 A15-12 A11-9 A8-0 Security Register #1 00H 0001 000 Byte Address Security Register #2 Security Register #3 00H 00H 0010 0011 000 000 Byte Address Byte Address Figure 32. Erase Security Registers command Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 8 44H 29 30 31 24 Bits Address Command SI 9 23 22 MSB 46 - 34 2 1 0 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.28. Program Security Registers (42H) The Program Security Registers command is similar to the Page Program command. It allows from 1 to 512 bytes Security Registers data to be programmed. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Program Security Registers command. The Program Security Registers command is entered by driving CS# Low, followed by the command code (42H), three address bytes and at least one data byte on SI. As soon as CS# is driven high, the self-timed Program Security Registers cycle (whose duration is tPP) is initiated. While the Program Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. If the Security Registers Lock Bit (LB3-1) is set to 1, the Security Registers will be permanently locked. Program Security Registers command will be ignored. Address A23-16 A15-12 A11-9 A8-0 Security Register #1 00H 0001 000 Byte Address Security Register #2 00H 0010 000 Byte Address Security Register #3 00H 0011 000 Byte Address Figure 33. Program Security Registers command Sequence Diagram CS# 5 6 7 8 24-bit address 3 23 22 21 2 Data Byte 1 0 7 1 MSB 6 5 4 3 2 1 2078 42H 2079 Command SI 28 29 30 31 32 33 34 35 36 37 38 39 9 10 2076 4 2077 3 2075 2 1 0 0 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 MSB CS# 2073 1 2074 0 SCLK SCLK SI Data Byte 3 Data Byte 2 7 6 5 4 3 2 MSB 1 0 7 6 5 4 3 2 MSB Data Byte 256 1 0 7 6 5 4 3 2 MSB 7.29. Read Security Registers (48H) The Read Security Registers command is similar to Fast Read command. The command is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Once the A8-A0 address reaches the last byte of the register (Byte 1FFH), it will reset to 000H, the command is completed by driving CS# high. 46 - 35 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Address A23-16 A15-12 A11-9 A8-0 Security Register #1 00H 0001 000 Byte Address Security Register #2 00H 0010 000 Byte Address Security Register #3 00H 0011 000 Byte Address Figure 34. Read Security Registers command Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 8 7 9 10 24-bit address Command SI 28 29 30 31 48H 23 22 21 3 2 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK SI Dummy Byte 7 6 5 4 3 2 1 0 Data Out1 5 4 3 2 7 6 MSB SO 1 0 Data Out2 7 6 5 MSB 7.30. Continuous Read Mode Reset (CRMR) (FFH) The Dual/Quad I/O Fast Read operations, “Continuous Read Mode” bits (M7-0) are implemented to further reduce command overhead. By setting the (M7-0) to AXH, the next Dual/Quad I/O Fast Read operations do not require the BBH/EBH/E7H command code. If the system controller is reset during operation it will likely send a standard SPI command, such as Read ID (9FH) or Fast Read (0BH), to the device. Because the GD25Q41B has no hardware reset pin, so if Continuous Read Mode bits are set to “AXH”, the GD25Q41B will not recognize any standard SPI commands. So Continuous Read Mode Reset command will release the Continuous Read Mode from the “AXH” state and allow standard SPI command to be recognized. Figure 35. Continuous Read Mode Reset Sequence Diagram Mode Bit Reset for Quad/Dual I/O CS# 0 1 2 3 4 5 6 7 SCLK SI(IO0) FFH SO(IO1) Don`t Care WP#(IO2) Don`t Care HOLD#(IO3) Don`t Care 46 - 36 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 7.31. Program/Erase Suspend (PES) (75H) The Erase/Program Suspend instruction “75H”, allows the system to interrupt a sector/block erase or page program operation and then read data from any other sector or block. The Write Status Register command (01H), Page Program command (02H) and Erase commands (20H, 52H, D8H, C7H, 60H ) are not allowed during suspend. Erase/Program Suspend is valid only during the sector/block erase or page program operation. A maximum of time of “tsus” (See AC Characteristics) is required to suspend the program/erase operation. While the Erase/Program suspend cycle is in progress, the Read Status Register command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Erase/Program suspend cycle and becomes a 0 when the cycle is finished and the device is ready to accept read command. A power-off during the suspend period will reset the device and release the suspend state. The command sequence is show in Figure36. Figure 36. Program/Erase Suspend Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 tSUS 7 Command SI 75H High-Z SO Accept read command 7.32. Program/Erase Resume (PER) (7AH) The Program/Erase Resume command must be written to resume the sector/block erase or program operation after a Program/Erase Suspend command. After issued the BUSY bit in the status register will be set to 1 and the sector/block erase or program operation will completed. The Program/Erase Resume command will be ignored unless a Program/Erase Suspend is active. The command sequence is show in Figure37. Figure 37. Program/Erase Resume Sequence Diagram CS# SCLK SI 0 1 2 3 4 5 6 7 Command 7AH SO Resume Erase/Program 46 - 37 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 8. ELECTRICAL CHARACTERISTICS 8.1. Power-On Timing Figure 38. Power-on Timing Sequence Diagram Table3. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min tVSL VCC(min) To CS# Low 10 tPUW VWI Time Delay Before Write Instruction Write Inhibit Voltage 1 2.1 Typ Max Unit us 10 2.5 2.3 ms V 8.2. Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status Register contains 00H (all Status Register bits are 0). 8.3. Data Retention and Endurance Parameter Minimum Pattern Data Retention Time Erase/Program Endurance Test Condition Min Unit 150°C 10 Years 125°C -40 to 85°C 20 100K Years Cycles 8.4. Latch Up Characteristics Parameter Input Voltage Respect To VSS On I/O Pins VCC Current 46 - 38 Min Max -1.0V VCC+1.0V -100mA 100mA Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 8.5. Absolute Maximum Ratings Parameter Value Unit -40 to 85 °C -65 to 150 °C Output Short Circuit Current 200 mA Applied Input/Output Voltage -0.5 to 4.0 V VCC -0.5 to 4.0 V Ambient Operating Temperature Storage Temperature 0.8VCC Input timing reference level 0.7VCC 0.2VCC 0.1VCC Output timing reference level AC Measurement Level 0.5VCC Note: Input pulse rise and fall time are <5ns 8.6. Capacitance Measurement Conditions Symbol CIN COUT Parameter Min Typ Max Unit Conditions 6 8 pF pF VIN=0V VOUT=0V 5 0.1VCC to 0.8VCC pF ns V 0.2VCC to 0.7VCC 0.5VCC V V Input Capacitance Output Capacitance Load Capacitance Input Rise And Fall time Input Pulse Voltage Input Timing Reference Voltage CL 30 Output Timing Reference Voltage Figure 39. Input Test Waveform and Measurement Level Maximum Negative Overshoot Waveform 20ns Maximum Positive Overshoot Waveform 20ns 20ns Vss Vcc + 2.0V Vss-2.0V Vcc 20ns 20ns 46 - 39 20ns Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 8.7. DC Characteristics Symbol (T= -40°C~85°C, VCC=2.7~3.6V) Max. Unit. Input Leakage Current ±2 μA ILO ICC1 Output Leakage Current Standby Current CS#=VCC, VIN=VCC or VSS 20 ±2 30 μA μA ICC2 Deep Power-Down Current CS#=VCC, VIN=VCC or VSS 1 5 μA CLK=0.1VCC/0.9VCC at 104MHz, Q=Open(*1,*2,*4 I/O) 15 mA CLK=0.1VCC/0.9VCC at 80MHz, Q=Open(*1,*2,*4 I/O) 12 mA CLK=0.1VCC/0.9VCC at 33MHz, Q=Open(*1,*2,*4 I/O) 6 mA ILI ICC3 Parameter Operating Current (Read) Test Condition Min. Typ. ICC4 Operating Current (PP) CS#=VCC 10 15 mA ICC5 Operating Current (WRSR) CS#=VCC 8 12 mA ICC6 ICC7 Operating Current (SE) Operating Current (BE) 10 10 15 15 mA mA ICC8 ICC9 Operating Current (CE) High Performance Current 10 400 15 600 mA μA VIL Input Low Voltage -0.5 0.2VCC V VIH VOL VOH Input High Voltage Output Low Voltage Output High Voltage 0.7VCC VCC+0.4 0.4 V V V CS#=VCC CS#=VCC IOL=1.6mA IOH=-100μA VCC-0.2 46 - 40 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 8.8. AC Characteristics Symbol (T= -40°C~85°C, VCC=2.7~3.6V, CL=30pf) Parameter Min. Typ. Max. Unit. fC Serial Clock Frequency For: FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI, WRSR, RDSR, RDID (*1,*2,*4 I/O) DC. 104 MHz fR Serial Clock Frequency For: Read DC. 80 MHz tCLH Serial Clock High Time 3.5 ns tCLL Serial Clock Low Time Serial Clock Rise Time (Slew Rate) 3.5 0.2 ns V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.2 V/ns tSLCH CS# Active Setup Time tCHSH CS# Active Hold Time 5 5 ns ns tSHCH CS# Not Active Setup Time tCHSL CS# Not Active Hold Time 5 5 ns ns tSHSL CS# High Time (Read/Write) 20 ns tCLCH tSHQZ Output Disable Time tCLQX Output Hold Time 6 1.2 ns ns 2 5 ns ns tHLCH Hold# Low Setup Time (Relative to Clock) 3.5 ns tHHCH Hold# High Setup Time (Relative to Clock) tCHHL Hold# High Hold Time (Relative to Clock) tCHHH Hold# Low Hold Time (Relative to Clock) 3.5 3.5 3.5 ns ns ns tDVCH Data In Setup Time tCHDX Data In Hold Time tHLQZ Hold# Low To High-Z Output tHHQX Hold# Low To Low-Z Output tCLQV Clock Low To Output Valid 6 6 6 tWHSL Write Protect Setup Time Before CS# Low tSHWL Write Protect Hold Time After CS# High tDP ns ns ns 20 100 ns ns tRES1 tRES2 CS# High To Deep Power-Down Mode CS# High To Standby Mode Without Electronic Signature Read CS# High To Standby Mode With Electronic Signature Read 0.1 5 5 μs μs μs tHPM tSUS tW CS# High To High Performance Mode CS# High To Next Command After Suspend Write Status Register Cycle Time 0.2 20 30 μs μs ms tPP tSE tBE Page Programming Time Sector Erase Time Block Erase Time(32K/64K) 10 0.35 2.4 50 200/400(1) 0.18/0.25 0.6/0.8 tCE Chip Erase Time 1.5 Note: (1). Max Value tSE with <50K cycles is 200 ms and >50K & <100K cycles is 400 ms. 46 - 41 3.0 ms ms s s Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com Figure40. Serial Input Timing tSHSL CS# tCHSL SCLK tSLCH tDVCH tCHSH MSB SO High-Z tCHCL tCLCH tCHDX SI tSHCH LSB Figure41. Output Timing CS# tCLH SCLK tCLQV tCLQX tCLQV tSHQZ tCLL tCLQX LSB SO SI Least significant address bit (LIB) in Figure42. Hold Timing CS# SCLK SO tCHHL tHLCH tCHHH tHLQZ tHHCH tHHQX HOLD# SI do not care during HOLD operation. 46 - 42 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 9. ORDERING INFORMATION GD 25 Q 41 B x I G x Packing Type T or no mark: Tube Y: Tray R: Tape & Reel Green Code G: Pb Free & Halogen Free Green Package Temperature Range I: Industrial(-40°C to +85°C) Package Type T: SOP8 150mil S: SOP8 208mil U: USON8 (3×2mm) Generation B: Version Density 41: 4Mb Series Q: 2.7~3.6V, 4KB Uniform Sector, Quad I/O Product Family 25: Serial Flash 46 - 43 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 10. PACKAGE INFORMATION 10.1. Package SOP8 150MIL 8 � 5 E1 E L 1 4 L1 C D A2 A1 b e A Seating plane 0.10 Dimensions Symbol Unit E1 e L L1 θ ɑ ß 5.80 3.80 - 0.40 0.85 0° 6° 11° Nom 4.90 6.00 3.90 1.27 1.06 Max 1.75 0.25 1.55 0.51 0.25 5.03 6.20 4.00 0.90 1.27 Min 0.053 0.002 0.053 0.012 0.006 0.188 0.228 0.149 - 0.016 0.033 8° 0° 7° 8° 6° 12° 13° 11° Nom - 0.016 - 0.193 0.236 0.154 0.050 0 0.042 Max 0.069 0.010 0.061 0.020 0.010 0.198 0.244 0.158 - 0.035 0.050 Note: Both package length and width do not include mold flash. 8° 7° 8° 12° 13° Min mm A A1 A2 b 1.35 0.05 1.35 0.31 c D 0.15 4.77 E Inch 46 - 44 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 10.2. Package SOP8 208MIL 8 � 5 E1 E L1 L 1 4 C D A2 Dimensions Symbol A1 b e A A A1 A2 b c D E E1 e L L1 θ 2.16 0.05 0.15 0.25 1.70 1.80 1.91 0.31 0.41 0.51 0.18 0.21 0.25 5.13 5.23 5.33 7.70 7.90 8.10 5.18 5.28 5.38 1.27 - 0.50 0.67 0.85 1.21 1.31 1.41 0° 5° 8° Min 0.002 0.067 0.012 0.007 0.202 0.303 Inch Nom 0.006 0.071 0.016 0.008 0.206 0.311 Max 0.085 0.010 0.075 0.020 0.010 0.210 0.319 Note: Both package length and width do not include mold flash. 0.204 0.208 0.212 0.050 - 0.020 0.026 0.033 0.048 0.052 0.056 0° 5° 8° Unit mm Min Nom Max 46 - 45 Rev.1.1 GD25Q41BxIGx Uniform Sector Dual and Quad Serial Flash http://www.elm-tech.com 10.3. Package USON8 (3×2mm) D A2 E y A Top View A1 Side View D1 L 1 b E1 e Bottom View Dimensions Symbol A A1 A2 b D D1 E E1 e y L 0.50 0.55 0.60 0.05 0.13 0.15 0.18 0.18 0.25 0.30 2.90 3.00 3.10 0.15 0.20 0.30 1.90 2.00 2.10 1.50 1.60 1.70 0.50 - 0.00 0.05 0.30 0.35 0.45 Min 0.020 0.005 0.007 0.114 0.006 Inch Nom 0.022 0.006 0.010 0.118 0.008 Max 0.024 0.002 0.007 0.012 0.122 0.012 Note: Both package length and width do not include mold flash. 0.075 0.079 0.083 0.059 0.063 0.067 0.020 - 0.000 0.002 0.012 0.014 0.018 Unit mm Min Nom Max 46 - 46 Rev.1.1