VISHAY TSOP1336SB1

TSOP13..SB1
VISHAY
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP13..SB1- series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
96 12581
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• No occurrence of disturbance pulses at the output
Special Features
Part
Carrier Frequency
TSOP1330SB1
30 kHz
TSOP1333SB1
33 kHz
TSOP1336SB1
36 kHz
TSOP1337SB1
36.7 kHz
TSOP1338SB1
38 kHz
TSOP1340SB1
40 kHz
TSOP1356SB1
56 kHz
Application Circuit
Transmitter TSOPxxxx
with
TSALxxxx
Circuit
• Suitable burst length ≥6 cycles/burst
• Enhanced immunity against all kinds of disturbance light
• Improved immunity against EMI from TV picture
tube
Parts Table
Block Diagram
R1 = 100 Ω
VS
OUT
GND
+VS
C1 =
4.7 µF
µC
VO
GND
2
25 kΩ
VS
3
Input
AGC
Band
Pass
Demodulator
OUT
R1 + C1 recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below VO = 3.3 V by the external circuit.
1
PIN
Control Circuit
Document Number 82026
Rev. 6, 15-Oct-2002
GND
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TSOP13..SB1
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Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VS
- 0.3 to +
6.0
V
IS
5
mA
VO
- 0.3 to +
6.0
V
5
mA
Supply Voltage
(Pin 2)
Supply Current
(Pin 2)
Output Voltage
(Pin 3)
Output Current
(Pin 3)
IO
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Tj
100
°C
Tstg
- 25 to + 85
°C
Tamb
- 25 to + 85
°C
Power Consumption
(Tamb ≤ 85 °C)
Ptot
50
mW
Soldering Temperature
t ≤ 10 s, 1 mm from case
Tsd
260
°C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Supply Current (Pin 2)
Symbol
Min
Typ.
Max
Unit
VS = 5 V, Ev = 0
ISD
0.8
1.2
1.5
mA
VS = 5 V, Ev = 40 klx, sunlight
ISH
Supply Voltage (Pin 2)
1.5
VS
Transmission Distance
Ev = 0, test signal see fig.3, IR
diode TSAL6200, IF = 0.4 A
Output Voltage Low (Pin 3)
IOSL = 0.5 mA, Ee = 0.7 mW/m2, f
= fo, test signal see fig.1
VOSL
Irradiance (30 - 40 kHz)
Test signal see fig.1
Ee min
Test signal see fig.3
4.5
mA
5.5
d
35
V
m
250
mV
0.4
0.6
mW/m2
Ee min
0.35
0.5
mW/m2
Test signal see fig.1
Ee min
0.45
0.7
mW/m2
Test signal see fig.3
Ee min
0.40
0.6
mW/m2
Irradiance
Test signal see fig.1
Ee max
Directivity
Angle of half transmission distance
Irradiance (56 kHz)
30
ϕ1/2
W/m2
± 45
deg
Typical Characteristics (Tamb = 25°C unless otherwise specified)
Optical Test Signal
(IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms)
t
tpi *)
T
*) tpi w 6/fo is recommended for optimal function
Output Signal
VO
1)
2)
VOH
VOL
14337
3/f0 < td < 9/f0
tpi – 4/f0 < tpo < tpi + 6/f0
td1 )
tpo2 )
Figure 1. Output Function
Document Number 82026
Rev. 6, 15-Oct-2002
t
0.35
t po – Output Pulse Width ( ms )
Ee
0.30
Output Pulse
0.25
0.20
0.15
Input Burst Duration
0.10
l = 950 nm,
optical test signal, fig.1
0.05
0.00
0.1
16907
1.0
10.0
100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
Figure 2. Pulse Length and Sensitivity in Dark Ambient
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TSOP13..SB1
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Vishay Semiconductors
Optical Test Signal
600 ms
t
600 ms
T = 60 ms
94 8134
Output Signal, ( see Fig.4 )
VO
VOH
VOL
Ton
4.0
Ee min– Threshold Irradiance ( mW/m 2 )
Ee
3.0
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01
t
Toff
Correlation with ambient light sources:
10W/m2^1.4klx (Std.illum.A,T=2855K)
10W/m2^8.2klx (Daylight,T=5900K)
3.5
Ee min– Threshold Irradiance ( mW/m 2 )
Ton ,Toff – Output Pulse Width ( ms )
1.0
0.9
Ton
0.7
0.6
0.5
Toff
0.4
0.3
l = 950 nm,
optical test signal, fig.3
0.2
0.1
0.0
0.1
1.0
10.0
100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
16910
1.0
0.8
0.6
0.4
f = f0"5%
Df ( 3dB ) = f0/10
0.9
1.1
Figure 5. Frequency Dependence of Responsivity
Document Number 82026
Rev. 6, 15-Oct-2002
f = fo
1.5
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DVsRMS – AC Voltage on DC Supply Voltage (mV)
2.0
f(E) = f0
1.6
1.2
0.8
0.4
0.0
0.0
1.3
f/f0 – Relative Frequency
16925
100.00
Figure 7. Sensitivity vs. Supply Voltage Disturbances
E e min– Threshold Irradiance ( mW/m 2 )
E e min / E e – Rel. Responsivity
1.2
0.0
0.7
10.00
2.0
16912
Figure 4. Output Pulse Diagram
0.2
1.00
Figure 6. Sensitivity in Bright Ambient
Figure 3. Output Function
0.8
0.10
E – Ambient DC Irradiance (W/m2)
16911
94 8147
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
Figure 8. Sensitivity vs. Electric Field Disturbances
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Vishay Semiconductors
0q
0.7
10q
20q
30q
Max. Envelope Duty Cycle
0.6
0.5
40q
1.0
0.4
0.3
0.9
50q
0.8
60q
0.2
70q
0.7
f = 38 kHz, Ee = 2 mW/m2
0.1
80q
0.0
0
20
40
60
80
100
120
Burst Length ( number of cycles / burst )
16916
0.6
95 11340p2
Figure 12. Horizontal Directivity ϕx
Ee min– Threshold Irradiance ( mW/m 2 )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0q
0.6
0.5
10q
20q
30q
Sensitivity in dark ambient
40q
0.4
1.0
0.3
0.9
50q
0.2
0.8
60q
0.1
0.7
70q
80q
0.0
–30 –15
0
15
30
45
60
75
90
Tamb – Ambient Temperature ( qC )
16918
0.6
0.4
0.2
0
0.2
0.4
drel – Relative Transmission Distance
Figure 13. Vertical Directivity ϕy
Suitable Data Format
1.2
1.0
0.8
0.6
0.4
0.2
0
750
0.6
95 11339p2
Figure 10. Sensitivity vs. Ambient Temperature
S ( l ) rel – Relative Spectral Sensitivity
0.6
0.4
0.2
0
0.2
0.4
drel – Relative Transmission Distance
850
94 8408
950
1050
1150
l – Wavelength ( nm )
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Document Number 82026
Rev. 6, 15-Oct-2002
The circuit of the TSOP13..SB1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 40
cycles a gap time of at least 12 cycles is necessary.
• For each burst which is longer than 1.0 ms a corresponding gap time is necessary at some time in the
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TSOP13..SB1
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IR Signal
IR Signal from fluorescent
lamp with high modulation
0
16921
5
10
15
20
Time ( ms )
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
IR Signal
data stream. This gap time should be at least 6 times
longer than the burst.
• Up to 1000 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, R-2000 Code, RECS-80 Code.
When a disturbance signal is applied to the
TSOP13..SB1 it can still receive the data signal. However the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP13..SB1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other frequency
• Signals from fluorescent lamps with electronic ballast with high or low modulation ( see Figure 14 or Figure 15 ).
IR Signal from fluorescent
lamp with low modulation
0
5
16920
10
15
20
Time ( ms )
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82026
Rev. 6, 15-Oct-2002
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TSOP13..SB1
VISHAY
Vishay Semiconductors
Package Dimensions in mm
96 12225
Document Number 82026
Rev. 6, 15-Oct-2002
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TSOP13..SB1
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82026
Rev. 6, 15-Oct-2002
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