Si4012 Data Short

Si4012
Crystal-less RF Transmitter
Description
Features
Silicon Laboratories’ Si4012 is a fully integrated crystal-less
CMOS high-data rate RF transmitter designed for the sub-GHz
ISM band. This chip is optimized for battery powered applications
requiring low standby currents and high output transmit power.
The device offers advanced radio features including continuous
frequency coverage from 27–960 MHz, adjustable output power of
up to +10 dBm, and data rates up to 100 Kbaud in FSK mode. The
Si4012’s high level of integration offers reduced BOM cost while
simplifying the overall system design.
- Frequency Range = 27–960 MHz
- FSK and OOK modulation
- Output Power
- Maximum: +10 dBm
- Configurable: –13 to +10 dBm
- Crystal-less operation
- ±150 ppm: 0 to + 70 °C
- ±250 ppm: –40 to + 85 °C
- Optional crystal input for tighter tolerances
- Data Rate
- FSK: 0.1 to 100 Kbaud
- OOK: 0.1 to 20 Kbaud
- Power Supply = 1.8 to 3.6 V
- TX 256 byte FIFO
- Low battery detector
- SMBus interface
- –40 to +85 °C temperature range
- 10-pin MSOP, Pb free/RoHS compliant
The transmitter supports data streaming into the TX FIFO without
external MCU support. The digital transmit modulation and
automatic PA power ramping ensure precise transmit modulation
and reduced spectral splatter, ensuring compliance with FCC,
ETSI, and ARIB regulations. Additional system features such as
the low battery detector and 256 byte TX FIFO reduce overall
current consumption and allow the use of lower-cost system
MCUs. The Si4012 is optimized for wireless MBUS T1-mode.
The device leverages Silicon Labs' patented and proven crystalless oscillator technology and offers better than ±150 ppm carrier
frequency stability over the temperature range of 0 to + 70 °C and
±250 ppm carrier frequency stability over the industrial range of 
–40 to +85 °C without the use of an external crystal or frequency
reference. The Si4012 automatically calibrates the on-chip voltage
controlled oscillator (LCOSC) which forms the output carrier frequency for process and temperature variations. An external 1-pin
crystal oscillator option is available for applications requiring
tighter frequency tolerances. The Si4012 is designed to work with
an MCU and a few passives to create a very low-cost system. Voltage regulators are integrated on-chip, which allows for a wide
range of operating supply voltage conditions from +1.8 to +3.6 V.
Digital integration reduces the amount of required external components compared to traditional offerings. The high integration of the
Si4012 improves the system manufacturing reliability, quality, and
minimizes costs. This chip offers industry leading RF performance,
high integration, flexibility, low BOM, small board area, and ease of
design. No production alignment is necessary as all RF functions
are integrated into the device.
Applications
-
Remote meter reading
Wireless MBUS T1-mode
Remote control
Remote keyless entry
Home security and alarm
Telemetry
Toy control
Home automation
Industrial control
Sensor networks
Health monitors
Si4012
DIGITAL LOGIC
SDA
SCL
SMBus
INTERFACE
RF ANALOG CORE
ANTENNA
TUNE
OOK
MODULATOR
TX
256 BYTE
DATA FIFO
LED
GPIO0/XTAL
PA
AUTO
TUNE
TXP
TXM
LCOSC
LPOSC
VA
DIGITAL
CONTROLLER
SLP
TMR
REGISTER
BANK
EZRadio
DIVIDER
FSK
SDN
nIRQ
XTAL
OSC
Copyright © 2010 by Silicon Laboratories
VD
LDO
POR
BANDGAP
VDD
GND
BATTERY
MONITOR
6.18.10
Si4012
Crystal-less High-data Rate RF Transmitter
Selected Electrical Specifications
Parameter
Symbol
Min
Typ
Max
Unit
1.8
—
3.6
V
Lowest current mode
—
100
—
nA
IIdle
Register values retained, lowest current
consumption idle mode
—
700
—
nA
ITune
Register values retained, LCOSC on,
fastest response to TX mode
—
5
—
mA
ITX_OOK
OOK, Manchester encoded
—
14.2
—
mA
ITX_FSK
FSK
—
19.8
—
mA
tShutdown-TX
—
21.4
—
ms
tShutdown-
—
16.4
—
ms
ms
Supply Voltage Range
Test Condition
Vdd
IShutdown
Power Saving Modes
TX Mode Current @ +10 dBm
Mode Response Time to TX
Idle
Frequency Range
tIdle-TX
—
5
—
tTune-TX
—
100
—
us
FRange
27
—
960
MHz
0 to + 70 °C
–150
—
+150
ppm
–40 to + 85 °C
–250
—
+250
ppm
Error contribution using optional crystal
–10
—
+10
ppm
Allen deviation, measured across 1ms
interval
—
0.3
—
ppm
Carrier Frequency Accuracy
Frequency Noise (rms)
Frequency Tuning Time
FSK Modulation Data Rate
DRFSK
OOK Modulation Data Rate
DROOK
Transmit Power
—
5
—
ms
0.1
—
100
Kbaud
0.1
—
50
Kbaud
Configurable output power range with
optimum load and VDD > 2.2 V
–13
—
+10
dBm
Power variation vs temp and supply, with
optimum load and VDD > 2.2 V
–1.0
—
+0.5
dB
Power variation vs temp and supply, with
optimum load and VDD > 1.8 V
–2.5
—
+0.5
dB
Step size from –13 to +6.5 dBm with
optimum load and VDD > 2.2 V
—
0.25
—
dB
—
300
—
ppm
–40
—
85
°C
FSK Deviation
Operating Ambient Temperature
Range
TA
MSOP-10 Pin Package
Symbol
Min
Nom
Max
Symbol
GPIO0/XTAL 1
10 SDA
A
—
—
1.10
e
GND 2
9 SCL
A1
0.00
—
0.15
L
8 SDN
A2
0.75
0.85
0.95
L2
b
0.17
—
0.33
q
0°
—
8°
c
0.08
—
0.23
aaa
—
—
0.20
bbb
—
—
0.25
TXM 3
Si4012
TXP 4
7 nIRQ
VDD 5
6 LED
D
3.00 BSC
Min
Nom
Max
0.50 BSC
0.40
0.60
0.80
0.25 BSC
E
4.90 BSC
ccc
—
—
0.10
E1
3.00 BSC
ddd
—
—
0.08
Notes:
1.
2.
3.
4.
All dimensions are shown in millimeters (mm).
Dimensioning and tolerancing per ASME Y14.5M-1994.
This drawing conforms to JEDEC Outline MS012, variation ”BA.”
Recommended card reflow profile is per the JEDEC/IPC J-STD-020
specification for Small Body Components.
Copyright © 2010 by Silicon Laboratories
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders
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