27C512T 512K (64K x 8-Bit) OTP EPROM A5-A9 1024 x 1022 Memory Matrix x-Decoder A12-A16 I/O0 Y- Gating Input Data Control I/O15 Y - Decoder CE OE A0-A4 A10-A11 PGM VCC VPP VSS H H : High Threshhold Inverter FEATURES: DESCRIPTION: • 64K x 8-bit OTP EPROM organization • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 Krad (Si), depending upon space mission • Excellent Single Event Effects: -SELTH > 80 MeV/mg/cm2 -SEUTH > 80 Mev/mg/cm2 • Package: -32 pin RAD-PAK® flat pack -32 pin RAD-PAK® DIP • Fast access time: - 120, 150, 200 ns (max) • Low power dissipation: - Active mode: 100 mW/MHz (typ) - Standby mode: 10 µ W (typ) • Programming power supply: - VPP = 12.5 V + 0.3 V • One-time programmable • Pin arrangement - JEDEC standard byte-wide EPROM - Flash memory and mask ROM compatible Maxwell Technologies’ 27C512T high density 512-Kilobit onetime programmable electrically programmable read only memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C512T features fast address times and low power dissipation. The 27C512T offers high speed programming using page programming mode. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. 06.24.03 Rev 4 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com All data sheets are subject to change without notice 1 ©2003 Maxwell Technologies All rights reserved. Memory Logic Diagram 27C512T 512K (64K x 8-Bit) OTP EPROM TABLE 1. 27C512T PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 1 VPP Programming Voltage 2, 30 NC Not connected 12-5, 27, 26, 23, 25, 4, 28, 29, 3 A0-A15 Address Enable 22 CE Chip Enable 24 OE Output Enable 13-15, 17-21 I/O0 - I/O7 Data Input/Output 16 GND Ground 31 PGM Program 32 VCC +5V Power Supply Memory TABLE 2. 27C512T ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNIT VCC -0.6 +7.0 V VPP -0.6 +13.5 V VIN, VOUT -0.6 +7.0 V VID -0.6 13.0 V Operating Temperature Range TOPR -55 +125 °C Storage Temperature Range TSTG -65 +125 °C Supply Voltage 1 Programming Voltage 1 All Input and Output Voltage 1,2 A9 and OE Voltage 1. Relative to VSS. 2. VIN, VOUT, and VID min = -1.0V for pulse width < 20 ns. TABLE 3. DELTA LIMITS PARAMETER VARIATION ISB ±10% ICC1 ±10% ICC2 ±10% ICC3 ±10% 06.24.03 REV 4 All data sheets are subject to change without notice 2 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM TABLE 4. 27C512T RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage VCC 4.5 5.5 V Input Voltage VIL -0.31 0.8 V VIH 2.2 VCC +12 -- 1.26 °C/W Thermal Impedance — Flat Package ΘJC ΘJC -- 1.27 °C/W Operating Temperature Range TOPR -55 +125 °C SYMBOL MIN MAX UNIT CIN -- 10 pF COUT -- 15 pF Thermal Impedance — DIP Package 1. VIL min = -1.0V for pulse width < 50 ns. 2. VIH max = VCC + 1.5V for pulse width < 20 ns. TABLE 5. 27C512T CAPACITANCE 1 PARAMETER Output Capacitance Memory Input Capacitance 1. Guaranteed by design. TABLE 6. 27C512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 ° C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION SYMBOL SUBGRPOUPS MIN TYP MAX UNIT Input Leakage Current VIN = 5.5 V ILI 1, 2, 3 -- -- 2 µA Output Leakage Current VOUT = 5.5 V/0.45 V ILO 1, 2, 3 -- -- 2 µA Standby VCC Current CE = VIH ISB 1, 2, 3 -- -- 1 mA Operating VCC Current IOUT = 0 mA, CE = VIL ICC1 1, 2, 3 -- -- 30 mA IOUT = 0 mA, f = 5 MHz ICC2 1, 2, 3 -- -- 30 IOUT = 0 mA, f = 10 MHz ICC3 1, 2, 3 -- -- 50 VPP = 5.5 V IPP1 1, 2, 3 -- 1 20 µA VIH 1, 2, 3 2.2 -- -- V VIL 1, 2, 3 -- IOH= -400µ A VOH 1, 2, 3 2.4 -- -- IOL= 2.1 mA VOL 1, 2, 3 -- -- 0.45 VPP Current Input Voltage Output Voltage 06.24.03 REV 4 0.8 V All data sheets are subject to change without notice 3 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM TABLE 7. 27C512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1,2 (VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 ° C, UNLESS OTHERWISE SPECIFIED) PARAMENTER TEST CONDITION SYMBOL SUBGRPOUPS Address Access Time -120 -150 -200 CE = OE = VIL tACC 9, 10, 11 Chip Enable Access Time -120 -150 -200 OE = VIL Output Enable Access Time -120 -150 -200 CE = VIL Output Hold to Address Change -120 -150 -200 CE = VIL Output Disable to High-Z3 -120 -150 -200 CE = OE = VIL tCE tOE tOH MAX UNIT ---- 120 150 200 ns ---- 120 150 200 ns ---- 60 70 70 ns 0 0 0 ---- ns 0 0 0 50 50 50 ns 9, 10, 11 9, 10, 11 9, 10, 11 Memory tDF MIN 9, 10, 11 1. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. 2. AC electrical parameters for programming operations are not tested. These are guaranteed by design. 3. Test conditions: - Input pulse levels 0.45V/2.4V - Input rise and fall times < 10 ns - Output load 1TTL Fate + 100 pF (including scope and jig) - Referenced levels for measuring timing 0.8V/2.0V 06.24.03 REV 4 All data sheets are subject to change without notice 4 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM TABLE 8. 27C512T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATION 1,2 (VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 ° C) SUBGROUPS MIN TYP MAX UNIT Address Setup Time tAS 9, 10, 11 2 -- -- µs Address Hold Time tAH 9, 10, 11 0 -- -- µs Data Setup Time tDS 9, 10, 11 2 -- -- µs Data Hold Time tDH 9, 10, 11 2 -- -- µs VPP Setup Time tVPS 9, 10, 11 2 -- -- µs VCC Setup Time tVCS 9, 10, 11 2 -- -- µs Output Enable Setup Time tOES 9, 10, 11 2 -- -- µs Output Disable Time tDF3 9, 10, 11 0 -- 130 ns CE Initial Programming Pulse Width tPW 9, 10, 11 0.19 0.20 0.21 ms CE Overprogramming Pulse Width tOPW 9, 10, 11 0.19 -- 5.25 ms Output Enable Hold Time tOEH 9, 10, 11 2 -- -- µs VPP Recovery Time tVR 9, 10, 11 2 -- -- µs Data Valid from Chip Enable tDV 9, 10, 11 1 -- -- µs Memory SYMBOL PARAMETER 1. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. 2. AC electrical parameters for programming operations are not tested. These are guaranteed by design. 3. Test Conditions: - Input pulse levels 0.45V/2.4V - Input rise and fall times < 20 ns - Referenced levels for measuring timing 0.8V/2.0V TABLE 9. 27C512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS1,2,3,4 (VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 ° C) PARAMETER TEST CONDITION SYMBOL SUBGROUPS MIN MAX UNIT Input Leakage Current VIN=0V to VCC ILI 1, 2, 3 -- 2 µA ICC 1, 2, 3 -- 30 mA IPP 1, 2, 3 -- 40 mA VIH 1, 2, 3 2.2 VCC+0.56 V VIL 1, 2, 3 -0.17 0.8 IOH=-400µ A VOH 1, 2, 3 2.4 -- IOH= 2.1mA VOL 1, 2, 3 -- 0.45 Operating VCC Current Operating VPP Current CE=PGM=VIL Input Voltage5 Output Voltage 1. 2. 3. 4. 5. V VCC must be applied before VPP and removed after VPP. VPP must not exceed 13V, including overshoot. Do not change VPP from VIL to 12.5V or 12.5V to VIL when CE = low. DC electrical parameters for programming operations are not tested. These are guaranteed by design. Device reliability may be adversely affected if the device is installed or removed while VPP = 12.5V. 06.24.03 REV 4 All data sheets are subject to change without notice 5 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM 6. If VIH is over the specified maximum value, programming operation can not be guaranteed. 7. VIL min = -0.6V for pulse width < 20 ns. TABLE 10. 27C512T MODE SELECTION VPP VCC CE OE PGM A9 I/O Read VCC VCC VIL VIL VIH X1 DOUT Output Disable VCC VCC VIL VIH VIH X High-Z Standby VCC VCC VIH X X X High-Z Program VPP VCC VIL VIH VIL X DIN Program Verify VPP VCC VIL VIL VIH X DOUT Page Data Latch VPP VCC VIH VIL VIH X DIN Page Program VPP VCC VIH VIH VIL X High-Z Program Inhibit VCC VCC VIL VIL VIL X High-Z VPP VCC VIL VIH VIH X High-Z VPP VCC VIH VIL VIL X High-Z VPP VCC VIH VIH VIH X High-Z VIH VH2 ID Identifier VCC VCC VIL VIL Memory MODE 1. X = Don’t care. 2. 11.5V < VH < 12.5V. 06.24.03 REV 4 All data sheets are subject to change without notice 6 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM FIGURE 1. READ TIMING WAVEFORM Memory 06.24.03 REV 4 All data sheets are subject to change without notice 7 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM FIGURE 2. PAGE PROGRAMMING FLOWCHART START SET PAGE PROG. MODE VPP=12.5+0.3V, VCC=6.0+ 0.25V A Address=0 n=0 n+1 n Latch NO Address+1 Address SET PAGE PROG./ VERIFY MODE VPP=12.5+0.3V, VCC=6.0+0.25V Address+1 Address n=25 YES Latch Memory Program t PW=0.2ms+5% Address+1 Address VERIFY B B Latch NOGO GO Program t OPW=0.2ms Address+1 Address NO Latch Last Address? YES SET PAGE MODE VCC=5.0+0.25V, V PP=VCC A READ All Address NOGO GO END 06.24.03 REV 4 FAIL All data sheets are subject to change without notice 8 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM FIGURE 3. PAGE PROGRAMMING TIMING WAVEFORM Memory 06.24.03 REV 4 All data sheets are subject to change without notice 9 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM FIGURE 4. BYTE PROGRAMMING FLOWCHART START SET PROG./VERIFY MODE VPP=12.5+0.3V, V CC=6.0+0.25V Address=0 n=0 n+1 n Program t PW=1ms+5% Address VERIFY Memory Address+1 NOGO GO Program t OPW=0.2ms NO n=25 NO YES Last Address? YES SET PAGE MODE VCC=5.0+0.25V, V PP=VCC READ All Address NOGO GO END 06.24.03 REV 4 FAIL All data sheets are subject to change without notice 10 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM FIGURE 5. BYTE PROGRAMMING TIMING WAVEFORM Memory DEVICE IDENTIFIER MODE DESCRIPTION The Device Identifier Mode allows binary codes to be read from the outputs that identify the manufacturer and the type of device. Using this mode with programming equipment, the device will automatically match its own erase and programming algorithm. 27C512T SERIES IDENTIFIER CODE IDENTIFIER A0 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 HEX DATA MANUFACTURER CODE VIL 0 0 0 0 0 1 1 1 07 DEVICE CODE VIH 0 0 1 1 1 0 0 0 38 1. 2. 3. 4. VCC = 5.0V + 10%. A9 = 12.0V + 0.5V. A1-A8, A10-A16, CE, OE = VIL, PGM = VIH. X = Don’t care. 06.24.03 REV 4 All data sheets are subject to change without notice 11 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM Memory 32 PIN RAD-PAK® DUAL IN LINE PACKAGE1 DIMENSION SYMBOL MIN NOM MAX A -- 0.215 0.240 b 0.014 0.018 0.026 b2 0.045 0.050 0.065 c 0.008 0.010 0.018 D -- 1.600 1.680 E 0.510 0.590 0.620 eA 0.600 BSC eA/2 0.300 BSC e 0.100 BSC L 0.125 0.145 0.155 Q 0.015 0.035 0.070 S1 0.005 0.025 -- S2 0.005 -- -- N 32 1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type Constant Acceleration is 3000g’s. Note: All dimensions in inches 06.24.03 REV 4 All data sheets are subject to change without notice 12 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM Memory 32 PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A 0.198 0.210 0.220 b 0.015 0.017 0.020 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488 E1 -- -- 0.498 E2 0.300 0.310 -- E3 0.030 0.085 -- e 0.050 BSC L 0.355 0.365 0.375 Q 0.055 0.065 0.075 S1 0.005 0.027 -- N 32 Note: All dimensions in inches 06.24.03 REV 4 All data sheets are subject to change without notice 13 ©2003 Maxwell Technologies All rights reserved. 512K (64K x 8-Bit) OTP EPROM 27C512T Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 06.24.03 REV 4 All data sheets are subject to change without notice 14 ©2003 Maxwell Technologies All rights reserved. 27C512T 512K (64K x 8-Bit) OTP EPROM Product Ordering Options Model Number 27C512T RP X X -XX Option Details Feature 12 = 120 ns 15 = 150 ns 20 = 200 ns Screening Flow Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Package D = Dual In-line Package (DIP) F = Flat Pack Radiation Feature RP = RAD-PAK® package Base Product Nomenclature 512K (64K x 8-Bit) OTP EPROM 06.24.03 REV 4 All data sheets are subject to change without notice Memory Access Time 15 ©2003 Maxwell Technologies All rights reserved.