Comchip Efficient Fast Recovery Rectifiers SMD Diode Specialist CEF860LT-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 (2.75) -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90) 0.146(3.70) 0.187(4.70) 0.148(3.80) 0.055(1.40) 0.047(1.20) 0.270(6.90) 0.230(5.80) -High surge current capability. 0.610(15.50) 0.583(14.80) Mechanical Data 0.04 MAX (1.0) -Case: TO-220AC, molded plastic. -Epoxy: UL 94V-0 rate flame retardant. 0.051 (1.30) 0.157 (4.0) 0.583(14.80) 0.531(13.50) -Polarity: As marked on the body. -Mounting position: Any 0.043(1.10) 0.032(0.80) -Weight: 2.14 grams 0.102(2.60) 0.091(2.30) 0.024(0.60) 0.012(0.30) 0.126 (3.20) Dimensions in inches and (millimeter) Maximun Ratings (at T =25°C unless otherwise noted) J Parameter Repetitive Peak Reverse Voltage Symbol CEF860LT-G Unit VRRM 600 V Average Rectified Forward Current @ TJ= 110°C IF(AV) 8 A Non-Repetitive Surge Forward Current TP = 10ms(50HZ) Sine Wave @ TJ= 25°C IFSM 125 A Avalanche Energy with Single Pulse ( L=40mH ) EAS 60 mJ Maximum Power Dissipation PD 54 W Junction-to-Case Thermal Resistance, Per Leg RθJC 2.3 °C/W Junction-to Ambient Thermal Resistance, Per Leg RθJA 70 °C/W TJ, TSTG -55 to +150 °C Operating Junction and Storage Temperatures REV:A Page 1 QW-BE011 Comchip Technology CO., LTD. Comchip Efficient Fast Recovery Rectifiers SMD Diode Specialist Electrical Characteristics and Curves (at T =25°C unless otherwise noted) J Symbol MIN. IR = 100μA VBR 600 IF = 8A VF 1.3 1.7 V IF = 8A , TJ = 125°C VF 1.1 1.5 V VR = 600V IR 10 μA VR = 600V , TJ = 125°C IR 250 μA TYP. MAX. Unit trr 24 30 ns trr 32 ns IRRM 4.2 A Qrr 67 nC trr 65 ns IRRM 6.2 A Qrr 201 nC Parameter Breakdown Voltage Conditions TYP. MAX. Unit V Forward Voltage Reverse Leakage Current Dynamic Recovery Characteristics Parameter Reverse Recovery Time Conditions IF = 1A , VR = 30V , dIF/dt = -200A/μs Reverse Recovery Time Peak Recovery Current dIF/dt = -200A/μs Reverse Recovery Time Reverse Recovery Charge MIN. IF = 8A , VR = 300V Reverse Recovery Charge Peak Recovery Current Symbol IF = 8A , VR = 300V dIF/dt = -200A/μs , TJ=125°C REV:A Page 2 QW-BE011 Comchip Technology CO., LTD. Comchip Efficient Fast Recovery Rectifiers SMD Diode Specialist RATING AND CHARACTERISTIC CURVES ( CEF860LT-G ) FIG.1 - Average Forward Current vs. Max. Allowable Cace Temperature FIG.2 - Typical Junction Capacitance vs. Reverse Voltage Average Forward Current, ( A ) 10 100 Junction Capacitance, (pF) 8 6 4 2 10 Square Wave (D=0.5) Rated VR Applied 0 0 100 110 120 130 140 150 160 0 100 200 300 400 500 Case Temperature, (°C) Reverse Voltage, (V) FIG.3 - Typical Value of Reverse Current vs. Reverse Voltage FIG.4 - Typical Forward Voltage Drop Characteristics 600 30 100 10 TJ=125°C 1 TJ=100°C 25 TJ=125°C Forward Current, ( A ) Reverse Current, (μA) TJ=150°C 0.1 20 15 10 TJ=25°C 0.01 5 TJ=25°C 0 0.001 0 100 200 300 400 500 600 0 Reverse Voltage, (V) 0.5 1 1.5 2 2.5 Forward Voltage Drop Voltage, ( V ) REV:A Page 3 QW-BE011 Comchip Technology CO., LTD. Comchip Efficient Fast Recovery Rectifiers SMD Diode Specialist Marking Code Part Number Marking code CEF860LT-G 8LFR060T C 8LFR060T C = Compchip Logo Standard Packaging TUBE PACK Case Type TO-220AC TUBE BOX ( pcs ) ( pcs ) 50 2,000 REV:A Page 4 QW-BE011 Comchip Technology CO., LTD.