SMD Schottky Barrier Diode CDBF70-HF I o = 70 mA V R = 70 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102(2.60) 0.095(2.40) -Low forward Voltage. -Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data 0.035(0.90) 0.027(0.70) -Case: 1005 /SOD-323F standard package, molded plastic. 0.020(0.50) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.012 (0.30) Typ. -Marking code: cathode band & BG 0.040(1.00) Typ. -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 0.006 gram(approx.). Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) Power dissipation Symbol Min Typ Max Unit V RM 70 V VR 70 V V R(RMS) 49 V IO 70 mA I FSM 0.1 A PD 200 mW Storage temperature T STG Junction temperature Tj -65 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 1mA I F = 15mA VF 0.41 1 V Reverse current V R = 50V IR 0.1 uA Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage CT 2 pF Reverse recovery time I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm T rr 5 nS REV:A Page 1 QW-G1009 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBF70-HF) Fig. 1 - Forward characteristics 100 C O 100u C O 25 C 12 5 O 75 Fig. 2 - Reverse characteristics O 125 C Reverse current ( A ) Forward current (mA ) O 0 C O -40 C 10 1 10u O 75 C 1u 100n O 25 C 10n O 0 C 1n O -40 C 0.1 0.1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 30 40 60 50 70 Reverse voltage (V) Forward voltage (V) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 120 2.0 f=1MHz O T A =25 C 1.8 Mounting on glass epoxy PCBs Average forward current(%) Capacitance between terminals ( P F) 20 1.6 1.4 1.2 1.0 0.8 0.6 0.4 100 80 60 40 20 0.2 0 0 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:A Page 2 QW-G1009 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed 1005 (SOD-323F) 1005 (SOD-323F) SYMBOL A B C d D D1 D2 (mm) 1.55 ± 0.10 2.65 ± 0.10 1.05 ± 0.10 1.55 ± 0.05 178 ± 1 60.0 MIN. 13.0 ± 0.20 (inch) 0.061 ± 0.004 0.104 ± 0.004 0.041 ± 0.004 0.061 ± 0.002 7.008 ± 0.04 2.362 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.23 ± 0.05 8.00 ± 0.20 13.5 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.531 MAX. REV:A Page 3 QW-G1009 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Marking Code Park Number Marking Code CDBF70-HF BG BG Suggested PAD Layout 1005/SOD-323F SIZE (mm) (inch) 2.10 0.083 A D A B 1.20 0.047 C 1.20 0.047 E C D 3.30 0.130 E 0.90 0.035 B Standard Package Qty per Reel Reel Size (Pcs) (inch) 4000 7 Case Type 1005/SOD-323F REV:A Page 4 QW-G1009 Comchip Technology CO., LTD.