CDBUR0230R-HF

SMD Schottky Barrier Diode
CDBUR0230R-HF
Io = 200 mA
VR = 30 Volts
RoHS Device
Halogen Free
0603/SOD-523F
Features
0.071(1.80)
0.063(1.60)
-Low reverse current.
-Designed for mounting on small surface.
0.039(1.00)
0.031(0.80)
-Extremely thin / leadless package.
-Majority carrier conduction.
0.033(0.85)
0.027(0.70)
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
0.020(0.50)
0.016(0.40)
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Mounting position: Any
0.030(0.75)
0.026(0.65)
-Weight: 0.003 grams (approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Typ
Max
Unit
VRRM
35
V
Reverse voltage
VR
30
V
Average forward current
IO
200
mA
IFSM
1
A
PD
340
mW
Thermal Resistance
RθJA
300
°C/W
Storage temperature
TSTG
+125
°C
Junction temperature
Tj
+125
°C
Max
Unit
Parameter
Conditions
Repetitive peak reverse voltage
Forward current, surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Power Dissipation
Min
-40
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Forward voltage
IF = 200 mA
VF
0.6
V
Reverse current
VR = 10 V
IR
1
μA
Diode Junction capacitance
f=1MHz, and 1 VDC reverse voltage
CJ
15
pF
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
QW-G1058
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBUR0230R-HF)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
1000
O
Reverse current ( A )
100
C
5
O
C
10
1u
O
25 C
100n
C
O
C
75 C
O
25
O
10u
O
-25 C
10n
-25
75
1
O
12
Forward current (mA )
125 C
100u
0.1
1n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
Fig. 3 - Capacitance between
terminals characteristics
25
30
Fig.4 - Current derating curve
100
f = 1 MHz
Ta = 25 C
Average forward current(%)
10
100
80
60
40
20
0
1
0
5
10
15
20
25
30
0
Fig. 6 - IR Dispersion map
560
AVG:568mV
550
540
100
125
150
O
800
700
600
500
400
300
Fig. 7 - CT Dispersion map
O
Ta=25 C
VR=10V
n=30pcs
900
Reverse current (nA)
570
75
50
1000
O
Ta=25 C
IF=200mA
n=30pcs
580
50
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
590
25
O
Reverse voltage (V)
AVG:111nA
200
Ta=25 C
F=1MHz
VR=0V
n=10pcs
45
Capacitance between
terminals(pF)
Capacitance between terminals ( P F)
20
Reverse voltage (V)
Forward voltage (V)
Forward voltage (mV)
15
40
35
30
25
20
15
AVG:18.8pF
10
100
5
0
0
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 2
QW-G1058
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
C
P
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
160mm (min)
Start
400mm (min)
Direction of Feed
SYMBOL
0603
(SOD-523F)
0603
(SOD-523F)
A
B
C
d
D
D1
D2
178.00 ± 1.00
60.00 ± 0.50
13.50 ± 0.20
7.008 ± 0.039
2.362 ± 0.020
0.531 ± 0.008
(mm)
1.16 ± 0.10
1.90 ± 0.10
0.95 ± 0.10
(inch)
0.046 ± 0.004
0.075 ± 0.004
0.037 ± 0.004
1.50 + 0.10
-0
0.059 + 0.004
-0
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.20
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.22 + 0.10
- 0.05
0.009 + 0.004
- 0.002
12.00 + 0.50
- 0
0.472 + 0.020
-0
Company reserves the right to improve product design , functions and reliability without notice.
0.315 ± 0.008
REV: B
Page 3
QW-G1058
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Part Number
Marking Code
CDBUR0230R-HF
BB
BB
Suggested PAD Layout
0603/SOD-523F
SIZE
(mm)
(inch)
A
1.25
0.049
B
0.60
0.024
D
A
E
C
C
1.00
0.039
D
1.85
0.073
E
0.65
0.026
B
Standard Package
Qty Per Reel
Reel Size
(Pcs)
(inch)
4,000
7
Case Type
0603/SOD-523F
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 4
QW-G1058
Comchip Technology CO., LTD.