SMD Schottky Barrier Diode CDBUR0230R-HF Io = 200 mA VR = 30 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071(1.80) 0.063(1.60) -Low reverse current. -Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) -Extremely thin / leadless package. -Majority carrier conduction. 0.033(0.85) 0.027(0.70) Mechanical data -Case: 0603/SOD-523F standard package, molded plastic. 0.020(0.50) 0.016(0.40) -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Mounting position: Any 0.030(0.75) 0.026(0.65) -Weight: 0.003 grams (approx.). Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Symbol Typ Max Unit VRRM 35 V Reverse voltage VR 30 V Average forward current IO 200 mA IFSM 1 A PD 340 mW Thermal Resistance RθJA 300 °C/W Storage temperature TSTG +125 °C Junction temperature Tj +125 °C Max Unit Parameter Conditions Repetitive peak reverse voltage Forward current, surge peak 8.3ms single half sine-wave superimposed on rate load(JEDEC method) Power Dissipation Min -40 Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Forward voltage IF = 200 mA VF 0.6 V Reverse current VR = 10 V IR 1 μA Diode Junction capacitance f=1MHz, and 1 VDC reverse voltage CJ 15 pF Company reserves the right to improve product design , functions and reliability without notice. REV: B QW-G1058 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBUR0230R-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 O Reverse current ( A ) 100 C 5 O C 10 1u O 25 C 100n C O C 75 C O 25 O 10u O -25 C 10n -25 75 1 O 12 Forward current (mA ) 125 C 100u 0.1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 Fig. 3 - Capacitance between terminals characteristics 25 30 Fig.4 - Current derating curve 100 f = 1 MHz Ta = 25 C Average forward current(%) 10 100 80 60 40 20 0 1 0 5 10 15 20 25 30 0 Fig. 6 - IR Dispersion map 560 AVG:568mV 550 540 100 125 150 O 800 700 600 500 400 300 Fig. 7 - CT Dispersion map O Ta=25 C VR=10V n=30pcs 900 Reverse current (nA) 570 75 50 1000 O Ta=25 C IF=200mA n=30pcs 580 50 Ambient temperature ( C) Fig. 5 - VF Dispersion map 590 25 O Reverse voltage (V) AVG:111nA 200 Ta=25 C F=1MHz VR=0V n=10pcs 45 Capacitance between terminals(pF) Capacitance between terminals ( P F) 20 Reverse voltage (V) Forward voltage (V) Forward voltage (mV) 15 40 35 30 25 20 15 AVG:18.8pF 10 100 5 0 0 Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 2 QW-G1058 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Reel Taping Specification d P0 P1 T E Index hole F W B C P A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 160mm (min) Start 400mm (min) Direction of Feed SYMBOL 0603 (SOD-523F) 0603 (SOD-523F) A B C d D D1 D2 178.00 ± 1.00 60.00 ± 0.50 13.50 ± 0.20 7.008 ± 0.039 2.362 ± 0.020 0.531 ± 0.008 (mm) 1.16 ± 0.10 1.90 ± 0.10 0.95 ± 0.10 (inch) 0.046 ± 0.004 0.075 ± 0.004 0.037 ± 0.004 1.50 + 0.10 -0 0.059 + 0.004 -0 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.20 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.22 + 0.10 - 0.05 0.009 + 0.004 - 0.002 12.00 + 0.50 - 0 0.472 + 0.020 -0 Company reserves the right to improve product design , functions and reliability without notice. 0.315 ± 0.008 REV: B Page 3 QW-G1058 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Marking Code Part Number Marking Code CDBUR0230R-HF BB BB Suggested PAD Layout 0603/SOD-523F SIZE (mm) (inch) A 1.25 0.049 B 0.60 0.024 D A E C C 1.00 0.039 D 1.85 0.073 E 0.65 0.026 B Standard Package Qty Per Reel Reel Size (Pcs) (inch) 4,000 7 Case Type 0603/SOD-523F Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 4 QW-G1058 Comchip Technology CO., LTD.