Highly Integrated Power Assembly (HIPA) Electronic Assemblies • Integrated solution speeds up development • Double-sided cooling boosts thermal performance and power density • Baseplate-less packaging and cold plate direct bonding enhance thermal performance • Wireless planar bonding reduces parasitic parameters and extends module’s capability Dynex Semiconductor Ltd Double-sided cooling Power through Innovation IGBT Module Specification Configuration 6 in 1 IGBT module with NTC Rated voltage and current 650V/600A Maximum junction temperature under switching conditions 150°C Cooling method Double-sided liquid cooling Thermal resistance per IGBT (Junction to cooling fluid) 50% water/50% ethylene glycol, 8L/min 0.114K/W Thermal resistance per Diode (Junction to cooling fluid) 50% water/50% ethylene glycol, 8L/min 0.223K/W Pressure drop in cooling circuit Thermal resistance: IGBT 1.1 Thermal resistance: Diode 0.34 0.17 ∆p Module RthJF Diode RthJF IGBT 1 0.16 0.9 0.15 0.8 0.14 0.32 0.3 0.7 RthJF(K/W) RthJF(K/W) ∆p(bar) 0.28 0.13 0.26 0.24 0.6 0.12 0.5 0.11 0.4 0.22 0.2 0.1 3 4 5 6 7 8 9 10 11 0.18 3 4 5 ∆V/∆t(dm3/min) 6 7 8 9 10 11 3 4 5 ∆V/∆t(dm3/min) 6 7 8 9 10 11 ∆V/∆t(dm3/min) Circuit diagram P1 P2 P3 C1 C3 C5 G1 G3 G5 E1 E3 E5 1 2 C2/E1’ C4/E3’ C6/E5’ T11C G2 T21C G4 T12C E2 E2’ 3 N1 G6 T22C E4 E4’ T31C N2 T32C E6 E6’ N3 Dynex Semiconductor Ltd Doddington Road, Lincoln LN6 3LF United Kingdom Email: [email protected] Main switchboard: +44 (0)1522 500 500 Electronic Assemblies: +44 (0)1522 502 940 @Dynexpower /DynexSemiconductor Dynex Semiconductor Ltd www.dynexsemi.com