850 EVO Solid State Drives 250 GB 500 GB 1 TB (1,000 GB) MZ-75E250B/AM MZ-75E500B/AM MZ-75E1T0B/AM 2 TB (2,000 GB) 4 TB (4,000 GB Fast and reliable SSD, for fast and reliable computing MZ-75E2T0B/AM MZ-75E4T0B/AM The advanced consumer SSD in a 2.5" form factor, powered by exclusive Samsung V-NAND technology. • SATA 6Gb/s SSD for Client PCs • 2.5 inch form factor • Samsung Magician Software for SSD management • Samsung V-NAND 3bit MLC • Samsung Data Migration Software Key features V-NAND technology in the Samsung 850 EVO SSD Samsung’s unique V-NAND flash memory architecture is a breakthrough in overcoming the density, performance and endurance limitations of today’s conventional planar NAND architecture. V-NAND is fabricated by stacking cell layers vertically, rather than decreasing the cells’ dimensions to fit into increasingly smaller form factors. The result is higher density and better performance with a smaller footprint. Optimized performance for everyday computing Powered by Samsung’s cutting-edge V-NAND technology, the 850 EVO delivers top-class sequential and random read and write performance to optimize everyday computing. With the improved performance that TurboWrite technology delivers, the 850 EVO provides a 10% better user experience than 840 EVO, as well as up to 1.9x/1.25x faster random write speeds for the 250 GB models. In fact, the 850 EVO delivers top- class sequential read (540 MB/s) and write (520 MB/s) performance in all capacities. And the 850 EVO delivers optimized random read and write performance on all QD, plus improved QD1 and QD2 random performance for Client PC usage. Reinforcement of TurboWrite technology Samsung was the first to introduce TurboWrite technology to sequential write performance. With TurboWrite Technology, write speeds have been significantly accelerated during data transfer by creating a highperformance write buffer in an SSD. If a consecutive write operation (i.e. no idle time) exceeds the size of a buffer, the transfer will exit TurboWrite and be processed at “After TurboWrite” speeds. But since the buffer size is more than sufficient for everyday computer use, users experience accelerated speeds for most workloads. Guaranteed endurance and reliability for maximum use The 850 EVO delivers guaranteed endurance and reliability by doubling the Terabytes Written (TBW) compared to the previous generation 840 EVO Series. The 850 EVO Series is backed by an industry-leading 5 year warranty or 75TBW (250 GB)/150TBW (500 GB, 1 TB)/300TBW (2 TB, 4 TB). With twice the endurance of a typical NAND flash SSD, the 850 EVO Series will keep working as long as you do. Enhanced reliability with improved sustained performance The 850 EVO Series boasts dependable performance up to 30% longer than the 840 EVO Series, with minimized performance degradation. You can use it every day, knowing it will perform at the highest levels for years. Advanced data encryption SSD sales: 1-866-SAM4BIZ samsung.com/ssd samsung.com/samsungssd Follow us youtube.com/samsungbizusa @SamsungBizUSA Self-Encrypting Drive (SED) security technology helps keep your data safe. An AES 256-bit hardware-based encryption engine secures your data without any of the performance degradation you might experience with software-based encryption. The 850 EVO is compliant with advanced security management solutions (TCG Opal and IEEE 1667), and you can erase or initialize data with the PSID crypto erase service. Efficient power management for all PC applications Since V-NAND uses half the power of 2D planar NAND, you save up to 50% more power during write operations than with the 840 EVO Series. And with a highly efficient 2mW Device Sleep feature and a controller optimized for V-NAND, you get longer battery life. Samsung 850 EVO Solid State Drives MZ-75E250B/AM MZ-75E500B/AM MZ-75E1T0B/AM MZ-75E2T0B/AM MZ-75E4T0B/AM Usage Application Client PCs Client PCs Client PCs Client PCs Client PCs Capacity1 250GB 500GB 1TB (1,000GB) 2TB (2,000GB) 4TB (4,000GB) Dimensions (WxHxD) 100 x 69.85 x 6.8 (mm) / 3.94" x 2.75" x 0.27" 100 x 69.85 x 6.8 (mm) / 3.94" x 2.75" x 0.27" 100 x 69.85 x 6.8 (mm) / 3.94" x 2.75" x 0.27" 100 x 69.85 x 6.8 (mm) / 3.94" x 2.75" x 0.27" 100 x 69.85 x 6.8 (mm) / 3.94" x 2.75" x 0.27" Interface SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s) SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s) SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s) SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s) SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s) Form Factor 2.5" 2.5" 2.5" 2.5" 2.5" Controller Samsung MGX Controller Samsung MGX Controller Samsung MGX Controller Samsung MHX Controller Samsung MHX Controller NAND Flash Memory Samsung V-NAND 3bit MLC Samsung V-NAND 3bit MLC Samsung V-NAND 3bit MLC Samsung V-NAND 3bit MLC Samsung V-NAND 3bit MLC DRAM Cache Memory 512MB LPDDR3 512MB LPDDR3 1GB LPDDR3 2GB LPDDR3 4GB LPDDR3 Sequential Read (Max.): 540 MB/s 540 MB/s 540 MB/s 540 MB/s 540 MB/s Sequential Write3 (Max.): 520 MB/s 520 MB/s 520 MB/s 520 MB/s 520 MB/s 4KB Random Read (QD1)(Max.): 10,000 IOPS 10,000 IOPS 10,000 IOPS 10,000 IOPS 10,000 IOPS 4KB Random Write (QD1)(Max.): 40,000 IOPS 40,000 IOPS 40,000 IOPS 40,000 IOPS 40,000 IOPS 4KB Random Read (QD32)(Max.): 97,000 IOPS 98,000 IOPS 98,000 IOPS 98,000 IOPS 98,000 IOPS 4KB Random Write (QD32)(Max.): 88,000 IOPS 90,000 IOPS 90,000 IOPS 90,000 IOPS 90,000 IOPS Data Security AES 256-bit Full Disk Encryption, TCG/ Opal V2.0, Encrypted Drive (IEEE1667) AES 256-bit Full Disk Encryption, TCG/ Opal V2.0, Encrypted Drive (IEEE1667) AES 256-bit Full Disk Encryption, TCG/ Opal V2.0, Encrypted Drive (IEEE1667) AES 256-bit Full Disk Encryption, TCG/ Opal V2.0, Encrypted Drive (IEEE1667) AES 256-bit Full Disk Encryption, TCG/ Opal V2.0, Encrypted Drive (IEEE1667) Weight (Max.) 55g 55g 55g 55g 55g Reliability (MTBF) 1.5 Million Hours 1.5 Million Hours 1.5 Million Hours 1.5 Million Hours 1.5 Million Hours TBW (Terabytes Written) 75TBW 150TBW 150TBW 300TBW 300TBW Active Read/Write (Average/Max): 3.1W / 3.6W 3.1W / 3.6W 3.1W / 3.6W 3.1W / 3.6W 3.1W / 3.6W Idle (Max.): 70mW 70mW 70mW 70mW 70mW Device Sleep (Typ.): 2mW 2mW 4mW 5mW 10mW TRIM (Required OS Support), Garbage Collection, S.M.A.R.T TRIM (Required OS Support), Garbage Collection, S.M.A.R.T TRIM (Required OS Support), Garbage Collection, S.M.A.R.T TRIM (Required OS Support), Garbage Collection, S.M.A.R.T TRIM a(Required OS Support), Garbage Collection, S.M.A.R.T Operating: 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C Non-Operating: -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C -40°C to 85°C Humidity 5% to 95%, Non-Condensing 5% to 95%, Non-Condensing 5% to 95%, Non-Condensing 5% to 95%, Non-Condensing 5% to 95%, Non-Condensing Vibration (Non-Operating) 20~2000Hz, 20G 20~2000Hz, 20G 20~2000Hz, 20G 20~2000Hz, 20G 20~2000Hz, 20G Shock (Non-Operating) 1500G, Duration 0.5m Sec, 3 Axis 1500G, Duration 0.5m Sec, 3 Axis 1500G, Duration 0.5m Sec, 3 Axis 1500G, Duration 0.5m Sec, 3 Axis 1500G, Duration 0.5m Sec, 3 Axis Warranty 5 Years Limited 5 Years Limited 5 Years Limited 5 Years Limited 5 Years Limited Performance2 Power Consumption4 Supporting Features Temperature 1GB = 1,000,000,000 bytes. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise). 1 Sequential performance measurements based on CrystalDiskMark v.3.0.1. Random performance measurements based on Iometer 1.1.0. Performance may vary based on SSD’s firmware version, system hardware and configuration. Test system configuration: Intel Core i7-4790K @ 4.0GHz, DDR3 1600MHz 8GB, OS: Windows 7 Ultimate x64 SP1, IRST 13.0.3.1001, Chipset: Intel® Z97PRO. 2 Sequential Write performance measurements based on TurboWrite technology. The sequential write performances after TurboWrite region are 300MB/s (250GB) and 500MB/s (500GB/1TB). 3 Power consumption measured with Iometer 1.1.0 with Intel i7-4770K, DDR3 8GB, Intel® DH87RL, OS: Windows 7 Ultimate x64 SP1. 4 Learn more samsung.com/ssd samsung.com/samsungssd insights.samsung.com Product support 1-866-SAM4BIZ Follow us youtube.com/samsungbizusa @SamsungBizUSA ©2016 Samsung Electronics America, Inc. Samsung is a registered mark of Samsung Electronics Corp., Ltd. Specifications and design are subject to change without notice. Non-metric weights and measurements are approximate. All brand, product, service names and logos are trademarks and or registered trademarks of their respective manufacturers and companies. See samsung.com for detailed information. Printed in USA. SSD-850EVODSHT-JUN16T