MIC4414 DATA SHEET (11/05/2015) DOWNLOAD

MIC4414/4415
1.5A, 4.5V to 18V,
Low-Side MOSFET Driver
General Description
Features
The MIC4414 and MIC4415 are low-side MOSFET drivers
designed to switch an N-channel enhancement type
MOSFET in low-side switch applications. The MIC4414 is
a non-inverting driver and the MIC4415 is an inverting
driver. These drivers feature short delays and high peak
current to produce precise edges and rapid rise and fall
times.
The MIC4414/15 are powered from a 4.5V to 18V supply
and can sink and source peak currents up to 1.5A,
switching a 1000pF capacitor in 12ns. The on-state gate
drive output voltage is approximately equal to the supply
voltage (no internal regulators or clamps). High supply
voltages, such as 10V, are appropriate for use with
standard N-channel MOSFETs. Low supply voltages, such
as 5V, are appropriate for use with many logic-level Nchannel MOSFETs.
In a low-side configuration, the driver can control a
MOSFET that switches any voltage up to the rating of the
MOSFET.
The MIC4414 and MIC4415 are available in an ultra-small
4-pin 1.2mm x 1.2mm thin QFN package and is rated for
–40°C to +125°C junction temperature range.
Data sheets and support documentation can be found on
Micrel’s web site at: www.micrel.com.
 Ultra-small 4-pin 1.2mm x 1.2mm thin QFN package
 +4.5V to +18V operating supply voltage range
 1.5A peak current
– 3.5Ω output resistance at 18V
– 9Ω output resistance at 5V
 Low steady-state supply current
– 77µA control input low
– 445µA control input high
 12ns rise and fall times into 1000pF load
 MIC4414 (non-inverting)
 MIC4415 (inverting)
 -40°C to +125°C junction temperature range
Applications
 Switch mode power supplies
 Solenoid drivers
 Motor driver
_________________________________________________________________________________________________________________________
Typical Application
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
August 2012
M9999-080112-A
Micrel, Inc.
MIC4414/MIC4415
Ordering Information
Part Number
Marking
Configuration
Package
Junction
Temperature
Range
Lead Finish
MIC4414YFT
D9
Non-Inverting
4-pin 1.2mm x 1.2mm Thin QFN
-40°C to +125°C
Pb-Free
MIC4415YFT
D8
Inverting
4-pin 1.2mm x 1.2mm Thin QFN
-40°C to +125°C
Pb-Free
Note:
1.Thin QFN pin 1 identifier = “▲”
Pin Configuration
1.2mm x 1.2mm Thin QFN
(Top View)
Pin Description
Pin Number
Pin Name
Pin Function
1
OUT
Gate Output: Connection to gate of external MOSFET.
2
GND
Ground.
Control Input:
3
IN
MIC4414: Logic high drives the gate output above the supply voltage. Logic low forces the gate output
near ground. Do not leave floating.
MIC4415: Logic low drives the gate output above the supply voltage. Logic high forces the gate output
near ground. Do not leave floating.
4
August 2012
VDD
Supply Voltage: +4.5V to +18V supply.
2
M9999-080112-A
Micrel, Inc.
MIC4414/MIC4415
Absolute Maximum Ratings(1)
Operating Ratings(3)
VDD to GND.................................................................+20V
IN to GND....................................................... –20V to +20V
OUT to GND.................................................................+20V
Junction Temperature (TJ) ........................–55°C to +150°C
Storage Temperature (Ts).........................–55°C to +165°C
ESD Rating(2) ................................................. ESD Sensitive
VDD to GND.................................................. +4.5V to +18V
IN to GND........................................................... 0V to VDD
Junction Temperature (TJ) ...................... .40C to +125C
Thermal Resistance
1.2mm x 1.2mm Thin QFN (JC) ........................60°C/W
1.2mm x 1.2mm Thin QFN (JA) ......................140°C/W
Electrical Characteristics(4)
4.5V  VDD  18V, CL = 1000pF; TA = 25°C, Bold values indicate 40°C ≤ TJ ≤ +125°C.
Parameter
Condition
Min
MIC4414: IN = 0V, VDD = 18V
Supply Current
MIC4415: IN = 5V, VDD = 18V
IN Current
Output Rise Time
Output Fall Time
Delay Time, IN Rising
Delay Time, IN Falling
Output Offset Voltage
Max
77
200
445
IN = Logic High
3
0V  VIN  VDD
-10
+10
30
VDD = 18V, CL = 1000pF
12
VDD = 5V, CL = 1000pF
33
VDD = 18V, CL = 1000pF
12
VDD = 5V, CL = 1000pF
52
VDD = 18V, CL = 1000pF
29
VDD = 5V, CL = 1000pF
58
VDD = 18V, CL = 1000pF
30
OUT = High
-25
OUT = Low
25
VDD = 18V, IOUT = 10mA
Source
9
Sink
9
ns
ns
ns
mV
3.5
10
Sink
3.5
10
250
µA
ns
Source
Output Reverse Current
V
V
VDD = 5V, CL = 1000pF
Output Resistance
1500
0.8
IN = Logic Low
VDD = 5V, IOUT = 10mA
Units
µA
MIC4414: IN = 5V, VDD = 18V
MIC4415: IN = 0V, VDD = 18V
IN Voltage
Typ
Ω
mA
Notes:
1. Exceeding the absolute maximum rating may damage the device.
2. Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5kΩ in series with 100pF.
3. The device is not guaranteed to function outside operating range.
4. Specification for packaged product only.
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MIC4414/MIC4415
Timing Diagram
Source State
Sink State
(P-Channel On, N-Channel Off)
(P-Channel Off, N-Channel On)
MIC4414/MIC4415 Operating States
MIC4414 (Non-Inverting)
MIC4415 (Inverting)
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MIC4414/MIC4415
Typical Characteristics
MIC4414 ON IN=5V, OFF IN=0V. MIC4415 ON IN=0V, OFF IN=5V.
IN Bias Current
vs. Supply Voltage
Supply Current
vs. Supply Voltage
15
400
IN = ON
300
200
100
IN = OFF
0
0.8
0.6
0.4
IN = ON
6
9
12
15
18
3
SUPPLY VOLTAGE (V)
6
6
9
12
15
0
18
3
Rise and Fall Time
vs. Supply Voltage
15
60
12
48
TIME (ns)
6
9
12
15
18
15
18
Delay Time
vs. Supply Voltage
80
CL =1000pF
IN = 1MHz, 50% DUTY CYCLE
IOUT = 10mA
9
6
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Output Sink Resistance
vs. Supply Voltage
36
FALL
24
64
IN FALL
48
32
IN RISE
RISE
16
12
3
0
0
0
0
3
6
9
12
15
0
18
3
SUPPLY VOLTAGE (V)
6
9
12
15
SUPPLY CURRENT (µA)
1.8
SOURCE
SINK
0.0
0
3
6
9
12
SUPPLY VOLTAGE (V)
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15
18
9
12
Output Source Resistance
vs. Temperature
500
2.4
6
SUPPLY VOLTAGE (V)
Supply Current
vs. Temperature
3.0
0.6
3
SUPPLY VOLTAGE (V)
Peak Output Current
vs. Supply Voltage
1.2
0
18
14
12
400
ON-RESISTANCE (Ω)
ON RESISTANCE (Ω)
IOUT = 10mA
9
0
0
DELAY TIME (ns)
3
12
3
0.2
0
0
CURRENT (A)
ON RESISTANCE (Ω)
1
IN BIAS CURRENT (µA)
SUPPLY CURRENT (µA)
500
Output Source Resistance
vs. Supply Voltage
VDD = 5V
IOUT = 3mA
10
300
VDD = 5V, IN = ON
VDD = 18V, IN = ON
200
VDD = 5V, IN = OFF VDD = 18V, IN = OFF
100
8
VDD = 18V
IOUT = 3mA
6
4
2
0
0
-50
-25
0
25
50
75
TEMPERATURE (°C)
5
100
125
-50
-25
0
25
50
75
100
125
TEMPERATURE (°C)
M9999-080112-A
Micrel, Inc.
MIC4414/MIC4415
Typical Characteristics (Continued)
MIC4414 ON IN=5V, OFF IN=0V. MIC4415 ON IN=0V, OFF IN=5V.
Output Sink Resistance
vs. Temperature
Rise and Fall Time
vs. Temperature
12
50
50
45
45
FALL
35
8
VDD = 18V
IOUT = 3mA
6
30
25
20
5
0
0
25
50
75
100
-25
TEMPERATURE (°C)
80
80
70
70
60
60
IN FALL
TIME (ns)
50
75
100
125
-50
50
IN RISE
30
IN FALL
30
20
10
VDD = 5V
IN RISE
VDD = 18V
0
-20
10
40
70
100
130
Supply Current
vs. Load Capacitance
100
-20
10
40
70
100
130
TIME (µs)
1
0.1
10
CAPACITANCE (nF)
August 2012
VDD = 5V
DUTY CYCLE = 50%
10
100
100
Output Rise and Fall Time
vs. Load Capacitance
100
VDD = 18V
IN = 1kHz; 50% DUTY CYCLE
10
1
FALL
1
FALL
RISE
0.1
0.01
1
IN = 10kHz
1
CAPACITANCE (nF)
VDD = 5V
IN = 1kHz, 50% DUTY CYCLE
0.1
VDD = 18V
Duty Cycle = 50%
125
IN = 100kHz
1
10
IN = 10kHz
100
10
Output Rise and Fall Time
vs. Load Capacitance
IN = 100kHz
10
75
IN = 1MHz
TEMPERATURE (°C)
IN = 1MHz
50
0.1
-50
TEMPERATURE (°C)
100
25
100
40
10
0
Supply Current
vs. Load Capacitance
50
20
-50
-25
TEMPERATURE (°C)
TIME (µs)
TIME (ns)
25
Delay Time
vs. Temperature
0
SUPPLY CURRENT (mA)
0
TEMPERATURE (°C)
Delay Time
vs. Temperature
40
RISE
0
-50
125
FALL
5
SUPPLY CURRENT (mA)
-25
25
10
0
-50
30
15
VDD = 5V
IN = 1MHz, 50% DUTY CYCLE
CL =1000pF
10
2
35
20
RISE
15
4
VDD = 18V
IN = 1MHz, 50% DUTY CYCLE
CL =1000pF
40
TIME (ns)
40
VDD = 5V
IOUT = 3mA
10
TIME (ns)
ON-RESISTANCE (Ω)
14
Rise and Fall Time
vs. Temperature
RISE
0.01
1
10
CAPACITANCE (nF)
6
100
1
10
100
CAPACITANCE (nF)
M9999-080112-A
Micrel, Inc.
MIC4414/MIC4415
Typical Characteristics (Continued)
MIC4414 ON IN=5V, OFF IN=0V. MIC4415 ON IN=0V, OFF IN=5V.
VDD Supply Current
vs. Frequency
VDD Supply Current
vs. Frequency
100
VDD = 5V
VDD SUPPLY CURRENT (mA)
VDD SUPPLY CURRENT (mA)
100
CL = 10000pF
CL = 5000pF
10
CL = 1000pF
CL = 0pF
0.1
CL = 10000pF
CL = 5000pF
10
CL = 2000pF
1
VDD = 18V
CL = 2000pF
CL = 1000pF
CL = 0pF
1
0.1
0
1
10
100
1000
IN FREQUENCY (kHz)
August 2012
10000
0
1
10
100
1000
10000
IN FREQUENCY (kHz)
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Micrel, Inc.
MIC4414/MIC4415
Functional Diagram
Functional Description
The MIC4414 is a non-inverting driver. A logic high on the
IN (control) pin produces gate drive output. The MIC4415
is an inverting driver. A logic low on the IN (control) pin
produces gate drive output. The OUT is used to turn on an
external N-channel MOSFET. The OUT pin will be driven
to 0V or VDD depending on the status of IN pin.
VDD
VDD (supply) is rated for +4.5V to +18V. External
capacitors are recommended to decouple noise.
IN
IN must be forced high or low by an external signal. A
floating input will cause unpredictable operation.
A high input turns on Q1, which sinks the output of the
0.3mA and the 0.6mA current source, forcing the input of
the first inverter low.
Hysteresis
The control threshold voltage, when IN is rising, is slightly
higher than the control threshold voltage when IN is falling.
When IN is low, Q2 is on, which applies the additional
0.6mA current source to Q1. Forcing IN high turns on Q1
which must sink 0.9mA from the two current sources. The
higher current through Q1 causes a larger drain-to-source
voltage drop across Q1. A slightly higher control voltage is
required to pull the input of the first inverter down to its
August 2012
threshold.
Q2 turns off after the first inverter output goes high. This
reduces the current through Q1 to 0.3mA. The lower
current reduces the drain-to-source voltage drop across
Q1. A slightly lower control voltage will pull the input of the
first inverter up to its threshold.
Drivers
The second (optional) inverter permits the driver to be
manufactured in inverting and non-inverting versions.
The last inverter functions as a driver for the output
MOSFETs Q3 and Q4.
OUT
OUT is designed to drive a capacitive load. The OUT
voltage is either approximately the supply voltage or
approximately ground, depending on the logic state
applied to IN. If IN is high, and VDD (supply) drops to zero,
the gate output will be floating (unpredictable).
ESD Protection
D1 protects VDD from negative ESD voltages. D2 and D3
clamp positive and negative ESD voltages applied to IN.
R1 isolates the gate of Q1 from sudden changes on the IN
pin. D4 and D5 prevent Q1’s gate voltage from exceeding
the supply voltage or going below ground.
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MIC4414/MIC4415
Application Information
MOSFET Selection
The MIC4414 and MIC4415 are designed to provide
high peak current for charging and discharging
capacitive loads. The 1.5A peak value is a nominal value
determined under specific conditions. This nominal value
is used to compare its relative size to other low-side
MOSFET drivers. The MIC4414 and MIC4415 are not
designed to directly switch 1.5A continuous loads.
Standard MOSFET
A standard N-channel power MOSFET is fully enhanced
with a gate-to-source voltage of approximately 10V and
has an absolute maximum gate-to-source voltage of
±20V.
The
MIC4414/15’s
on-state
output
is
approximately equal to the supply voltage. The lowest
usable voltage depends upon the behavior of the
MOSFET.
Supply Bypass
A capacitor from VDD to GND is recommended to
control switching and supply transients. Load current
and supply lead length are some of the factors that affect
capacitor size requirements.
4.7µF or 10µF ceramic or tantalum capacitor is suitable
for many applications. Low-ESR (equivalent series
resistance) metalized film capacitors may also be
suitable. An additional 0.1µF ceramic capacitor is
suggested in parallel with the larger capacitor to control
high-frequency transients. The low ESR (equivalent
series resistance) of ceramic and tantalum capacitors
makes them especially effective, but also makes them
susceptible to uncontrolled inrush current from low
impedance voltage sources (such as NiCd batteries or
automatic test equipment). Avoid instantaneously
applying voltage, capable of very high peak current,
directly to or near low ESR capacitors without additional
current limiting. Normal power supply turn-on (slow rise
time) or printed circuit trace resistance is usually
adequate.
Figure 1. Using a Standard MOSFET
Logic-Level MOSFET
Logic-level N-channel power MOSFETs are fully
enhanced with a gate-to-source voltage of approximately
5V and some of them have an absolute maximum gateto-source voltage of ±10V. They are less common and
generally more expensive. The MIC4414/15 can drive a
logic-level MOSFET if the supply voltage, including
transients, does not exceed the maximum MOSFET
gate-to-source rating (10V).
Circuit Layout
Avoid long power supply and ground traces. They exhibit
inductance that can cause voltage transients (inductive
kick). Even with resistive loads, inductive transients can
sometimes exceed the ratings of the MOSFET and the
driver. When a load is switched off, supply lead
inductance forces current to continue flowing and results
in a positive voltage spike. Inductance in the ground
(return) lead to the supply has similar effects, except the
voltage spike is negative. Switching transitions
momentarily draw current from VDD to GND. This
combines with supply lead inductance to create voltage
transients at turn on and turnoff. Transients can also
result in slower apparent rise or fall times when driver’s
ground shifts with respect to the control input.
Minimize the length of supply and ground traces or use
ground and power planes when possible. Bypass
capacitors should be placed as close as practical to the
driver.
Figure 2. Using a Logic-Level MOSFET
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MIC4414/MIC4415
frequency, and load capacitance. Determine this value
from the “Typical Characteristics: Supply Current vs.
Frequency” graph or measure it in the actual application.
Do not allow PD to exceed PD (MAX), as shown in the Eq 2.
TJ (junction temperature) is the sum of TA (ambient
temperature) and the temperature rise across the
thermal resistance of the package. In another form:
At low voltages, the MIC4414/15’s internal P- and Nchannel MOSFET’s on-resistance will increase and slow
the output rise time. Refer to “Typical Characteristics”
graphs.
Inductive Loads
Switching off an inductive load in a low-side application
forces the MOSFET drain higher than the supply voltage
(as the inductor resists changes to current). To prevent
exceeding the MOSFET’s drain-to-gate and drain-tosource ratings, a Schottky diode should be connected
across the inductive load.
P (MAX) 
D
125  T
140
A
Equation 2
where:
PD (MAX) = maximum power dissipation (W)
125 = Operating maximum junction temperature (˚C)
TA = ambient temperature (˚C)
140 = package thermal resistance (˚C/W)
High-Frequency Operation
Although the MIC4414/15 driver will operate at
frequencies greater than 1MHz, the MOSFET’s
capacitance and the load will affect the output waveform
(at the MOSFET’s drain). For example, an
MIC4414/IRL3103 test circuit using a 47Ω, 5W load
resistor will produce an output waveform that closely
matches the input signal shape up to about 500kHz. The
same test circuit with a 1kΩ load resistor operates only
up to about 25kHz before the MOSFET source
waveform shows significant change.
Figure 3. Switching an Inductive Load
Power Dissipation
The maximum power dissipation must not be exceeded
to prevent die meltdown or deterioration. Power
dissipation in on/off switch applications is negligible.
Fast repetitive switching applications, such as SMPS
(switch mode power supplies), cause a significant
increase in power dissipation with frequency. Power is
dissipated each time current passes through the internal
output MOSFETs when charging or discharging the
external MOSFET. Power is also dissipated during each
transition when some current momentarily passes from
VDD to GND through both internal MOSFETs. Power
dissipation is the product of supply voltage and supply
current:
PD  VDD  IDD
Equation 1
where:
Figure 4. MOSFET Capacitance Effects at High
Switching Frequency
PD = Power dissipation (W)
VDD = Supply voltage (V)
IDD = Supply current (A)
Supply current is a function of supply voltage, switching
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MIC4414/MIC4415
When the MOSFET is driven off, the slower rise occurs
because the MOSFET’s output capacitance recharges
through the load resistance (RC circuit). A lower load
resistance allows the output to rise faster. For the fastest
driver operation, choose the smallest power MOSFET
that will safely handle the desired voltage, current, and
safety margin. The smallest MOSFETs generally have
the lowest capacitance.
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MIC4414/MIC4415
Evaluation Board Schematic
Bill of Materials
Item
C1
Part Number
GRM188R71E104KA01D
C2
Manufacturer
(1)
Murata
C2012X5R1E475K
TDK(2)
GRM21BR61E475KA12L
Murata
08053D475KAT2A
Description
Qty.
0.1µF/25V Ceramic Capacitor, X7R, Size 0603
1
4.7µF/25V Ceramic Capacitor, X5R, Size 0805
1
(3)
AVX
C3 (OPEN)
Used as gate Capacitor, different values
Q1 (OPEN)
MIC4414YFT
U1
MIC4415YFT
Micrel, Inc.(4)
1.5A/4.5V to 18V Low Side MOSFET Driver
1
Notes:
1.
Murata: www.murata.com.
2.
TDK: www.tdk.com.
3.
AVX: www.avx.com.
4.
Micrel, Inc.: www.micrel.com.
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MIC4414/MIC4415
PCB Layout
Figure 5. MIC4414/15 Evaluation Board Top Layer
Figure 6. MIC4414/15 Evaluation Board Bottom Layer
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MIC4414/MIC4415
Package Information
4-Pin 1.2mm x 1.2mm Thin QFN (FT)
MICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB http://www.micrel.com
Micrel makes no representations or warranties with respect to the accuracy or completeness of the information furnished in this data sheet. This
information is not intended as a warranty and Micrel does not assume responsibility for its use. Micrel reserves the right to change circuitry,
specifications and descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual
property rights is granted by this document. Except as provided in Micrel’s terms and conditions of sale for such products, Micrel assumes no liability
whatsoever, and Micrel disclaims any express or implied warranty relating to the sale and/or use of Micrel products including liability or warranties
relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right.
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© 2012 Micrel, Incorporated.
August 2012
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