Preliminary Technical Data ADP1829 and ADP1821 Reference Design FCDC 00081 FEATURES Five Output Voltages: 1.2 V, 1.8 V, 3.3 V, 5 V, 12 V Output Current: 1 A to 4.5 A Input voltage: 15.2-16.8 V Ripple 50 mV ppk Transient step ±5%, 50% max load ADP1829 AND ADP1821 REFERENCE DESIGN DESCRIPTION This ADP1829 and ADP1821 Reference Design uses 15.2 V to 16.8 V for the input voltage. The output voltages and currents are as follows: • VOUT1 = 1.2 V with a maximum output current of 3.5 A, • VOUT2 = 1.8 V with a maximum output current of 1.4 A, • VOUT3 = 3.3 V with a maximum output current of 2.2 A, • VOUT4 = 5.0 V with a maximum output current of 2.3 A, • VOUT5 = 12 V with a maximum output current of 1.2 A. Design criteria are for coincidental tracking of VOUT1, VOUT2 and VOUT3 with VOUT4 for both turn on and turn off. The ripple and transient assumptions are 50 mV peak to peak voltage ripple and 5% deviation due to 50% instantaneous load step. The switching frequency is fixed at 300 kHz for VOUT1, VOUT2, VOUT3 VOUT4 and VOUT5. Rev. 1 Reference designs are as supplied “as is” and without warranties of any kind, express, implied, or statutory including, but not limited to, any implied warranty of merchantability or fitness for a particular purpose. No license is granted by implication or otherwise under any patents or other intellectual property by application or use of reference designs. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Analog Devices reserves the right to change devices or specifications at any time without notice. Trademarks and registered trademarks are the property of their respective owners. Reference designs are not authorized to be used in life support devices or systems. One Technology Way, P.O. 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Preliminary Technical Data FCDC 00081 TABLE OF CONTENTS Features....................................................................................................................................................................................................... 1 ADP1829 and ADP1821 Reference Design Description..................................................................................................................... 1 Revision History........................................................................................................................................................................................ 2 General Description ................................................................................................................................................................................. 3 ADP1829................................................................................................................................................................................................ 3 ADP1821................................................................................................................................................................................................ 3 Typical Performance Characteristics...................................................................................................................................................... 4 Schematic ................................................................................................................................................................................................... 9 Bill of Materials ....................................................................................................................................................................................... 12 TABLE OF FIGURES Figure 1. Calculated efficiency of 1.2V output with 2xSi2304BDS high and 3xSi2304BDS low.............................................. 4 Figure 2. Calculated efficiency of 1.2V output with 1xSP8K3 dual.............................................................................................. 4 Figure 3. Calculated efficiency of 1.8V output with 1xSi2304BDS high and 2xSi2304BDS low.............................................. 5 Figure 4. Calculated efficiency of 1.8V output with 1xSP8K3 dual.............................................................................................. 5 Figure 5. Calculated efficiency of 3.3V output with 2xSi2304BDS high and 2xSi2304BDS low.............................................. 6 Figure 6. Calculated efficiency of 3.3V output with 1xSP8K3 dual.............................................................................................. 6 Figure 7. Calculated efficiency of 5.0V output with 2xSi2304BDS high and 2xSi2304BDS low.............................................. 7 Figure 8. Calculated efficiency of 5.0V output with 1xSP8K3 dual.............................................................................................. 7 Figure 9. Calculated efficiency of 12.0V output with 1xSi2304BDS high and 1xSi2304BDS low............................................ 8 Figure 10. Calculated efficiency of 12.0V output with 1xSP8K3 dual ....................................................................................... 8 Figure 11. Schematic: VOUT1 and VOUT2 ........................................................................................................................................... 9 Figure 12. Schematic: VOUT3 ,VOUT4 and linear output ................................................................................................................ 10 Figure 13. Schematic: VOUT5 ........................................................................................................................................................... 11 REVISION HISTORY 10/17/2007—Revision 0: Initial Version 10/19/2007—Revision 1: Updated Efficiency graphs to show comparison of Rohm SP8K3 dual. Added Sgnd to schematic. Rev. 1 | Page 2 of 15 Preliminary Technical Data FCDC 00081 GENERAL DESCRIPTION ADP1829 The ADP1829 is a versatile, dual output, interleaved, synchronous PWM buck controller that generates two independent outputs from an input voltage of 3.0 V to 18 V. Each channel can be configured to provide output voltage from 0.6V to 85% of the input voltage. The two channels operate 180° out of phase, which reduces the current stress on the input capacitor and allows the use of a smaller and lower cost input capacitor. The ADP1829 operates at a pin-selectable fixed switching frequency of either 300 kHz or 600 kHz. For some noise sensitive applications, it can also be synchronized to an external clock to achieve switching frequency between 300 kHz and 1 MHz. The switching frequency chosen is 300 kHz to get good efficiency over a wide range of input and output conditions. The ADP1829 includes an adjustable soft start to limit input inrush current, voltage tracking for sequencing or DDR termination, independent power-good output, and a power enable pin. It also provides current-limit and short-circuit protection by sensing the voltage on the synchronous MOSFET. ADP1821 The ADP1821 is a versatile and inexpensive, synchronous, pulse width-modulated (PWM), voltage-mode, step-down controller. It drives an all N-channel power stage to regulate an output voltage as low as 0.6 V. The ADP1821 can be configured to provide output voltages from 0.6 V to 85% of the input voltage and is sized to handle large MOSFETs for point-of-load regulators. The ADP1821 is well suited for a wide range of high power applications, such as DSP and processor core power in telecom, medical imaging, high performance servers, and industrial applications. It operates from a 3.0 V to 5.5 V supply with a power input voltage ranging from 1.0 V to 24 V. The ADP1821 operates at a pin-selectable, fixed switching frequency of either 300 kHz or 600 kHz, minimizing external component size and cost. For noise-sensitive applications, it can be synchronized to an external clock to achieve switching frequencies between 300 kHz and 1.2 MHz. The ADP1821 includes soft start protection to limit the inrush current from the input supply during startup, reverse current protection during soft start for precharged outputs, as well as a unique adjustable lossless current-limit scheme utilizing external MOSFET sensing. The ADP1821 operates over the –40°C to +85°C temperature range and is available in a 16-lead QSOP. Rev. 1 | Page 3 of 15 Preliminary Technical Data FCDC 00081 TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Calculated efficiency of 1.2V output with 2xSi2304BDS high and 3xSi2304BDS low Figure 2. Calculated efficiency of 1.2V output with 1xSP8K3 dual Rev. 1 | Page 4 of 15 Preliminary Technical Data Figure 3. FCDC 00081 Calculated efficiency of 1.8V output with 1xSi2304BDS high and 2xSi2304BDS low Figure 4. Calculated efficiency of 1.8V output with 1xSP8K3 dual Rev. 1 | Page 5 of 15 Preliminary Technical Data Figure 5. FCDC 00081 Calculated efficiency of 3.3V output with 2xSi2304BDS high and 2xSi2304BDS low Figure 6. Calculated efficiency of 3.3V output with 1xSP8K3 dual Rev. 1 | Page 6 of 15 Preliminary Technical Data Figure 7. FCDC 00081 Calculated efficiency of 5.0V output with 2xSi2304BDS high and 2xSi2304BDS low Figure 8. Calculated efficiency of 5.0V output with 1xSP8K3 dual Rev. 1 | Page 7 of 15 Preliminary Technical Data Figure 9. FCDC 00081 Calculated efficiency of 12.0V output with 1xSi2304BDS high and 1xSi2304BDS low Figure 10. Calculated efficiency of 12.0V output with 1xSP8K3 dual Rev. 1 | Page 8 of 15 Preliminary Technical Data FCDC 00081 SCHEMATIC Figure 11. Schematic: VOUT1 and VOUT2 Rev. 1 | Page 9 of 15 Preliminary Technical Data FCDC 00081 Figure 12. Schematic: VOUT3 ,VOUT4 and linear output 3.3V at 2.2A, 5.0V at 2.3A and 1.5V at 0.1A S Vo5V0 Rc12 S Cc12 Rf11 Reh S S Rt1lb Cvcc Rt1h Rt1la Css1 Cc10 Vin Rel Rin Cbias S Cc11 Din 32 31 30 29 CMP1 TRK1 SS1 VREG Rc11 1 2 S Rf12a 3 S 4 S Rf12b 5 6 S 7 8 28 27 26 25 IN LDO EN2 EN1 SD POK1 FB1 SYNC U1 BST1 FREQ ADP1829ACPZ DH1 GND SW1 UV2 CSL1 FB2 PGND1 CMP2 DL1 TRK2 PV Cc20 Rpg1 24 10 11 12 13 14 15 Cin11 Rb1 23 22 QH1 Cb1 21 20 Co11 Co12 Rlim1 Clim1 Db1 L1 Rpv 18 Rsn1 QL1 17 Cpv QL2 16 Rsn2 Csn2 Clim2 Rf22 Rc21 Cc21 Vo3V3 Csn1 19 SS2 POK2 BST2 DH2 SW2 CSL2 PGND2 DL2 9 S POK3V3 Css2 Vo5V0 Db2 Rlim2 Rpg2 L2 Co21 Co22 S S POK5V0 Rf23 Rc22 Cb2 QH2 Rf21 Cin21 Rb2 Cc22 POK3V3 1 GND EN Vo3V3 8 U2 IN GND ADP1715ARMZ-1.5-R7 OUT GND Cin31 Vo1V5 Co31 4 SS Css3 Rev. 1 | Page 10 of 15 GND 5 Cin22 Preliminary Technical Data FCDC 00081 Figure 13. Schematic: VOUT5 12.0V at 1.2A Vin 5V0 Db Rpv BST QH1 Cb DH Cin1 Rin PVCC Cpv DL U1 SW PGND L1 Rlim Vo12V0 SYNC Co2 Co1 Clim ADP1821ARQZ S Csn CSL FREQ VCC SHDN COMP PWGD FB GND SS S QL1 Cvcc S Rsn Reh Cc1 Rpg S Css Rc1 Cc0 S Cc2 Rc2 Rf2a Rf1 Rf2b S Rev. 1 | Page 11 of 15 Preliminary Technical Data FCDC 00081 BILL OF MATERIALS Table 1. Vout1, and Vout2 Bill of Materials (1.2 V and 1.8 V) Description Designator Quantity Manufacturer MFR# Capacitor Ceramic COG 680p 0603 50V Cc12, Cc22 2 Vishay Generic Capacitor Ceramic COG 100p 0603 50V Cc10, Cc20 2 Vishay Generic Capacitor Ceramic X7R 1.5n 0603 50V Cc11 1 Vishay Generic Capacitor Ceramic X7R 1u 0603 16V Cbias, Cpv 2 Murata GRM188R71C105KA12D Capacitor Ceramic X7R 1u 0603 25V Cvcc 1 Murata GRM188R71E105KA12D Generic Capacitor Ceramic X7R 15n 0603 16V Css1, Css2 2 Vishay Capacitor Ceramic X7R 10u 1210 25V Cin11, Cin21 2 Kyocera CM32X7R106K25AT Capacitor Ceramic X7R 100n 0603 16V Cb1, Cb2 2 Vishay Generic Capacitor Ceramic COG 33p 0603 50V Clim1, Clim2 2 Vishay Generic Capacitor Ceramic X7R 1.8n 0603 50V 1 Vishay Generic Capacitor Ceramic X5R 22u 1210 6.3V Cc21 Co11, Co12, Co13, Co21 4 Taiyo-Yuden JMK316BJ226KL-T Diode Schottky 200mA SOD-323 30V Db1, Db2 2 Diodes inc BAT54WS No Pop Zener 200mW SOD-323 18V Din 0 Diodes inc MMSZ5248BS Inductor Ferrite 2.7uH 10.4mm x 10.4mm L1 1 Toko B966AS-2R7N Inductor Ferrite 10uH 7.6mm x 7.6mm L2 1 Toko B1047AS-100M Single N-Channel MOSFET SOT-23 30V QL1a, QL1b, QL1c, QH1a, QH1b, QH2a, QL2a, QL2b 8 Vishay Si2304BDS 1A Thick Film 0 Ohm jumper 0603 Rf23, Rb1, Rb2 3 Vishay Generic 5% Thick Film 10 Ohms 0603 Rpv 1 Vishay Generic 1% Thick Film 200 Ohms 0603 Rin 1 Vishay Generic 1% Thick Film 10.0k 0603 Rpg1, Rpg2, Rf22, Rt2l 4 Vishay Generic 1% Thick Film 20.0k 0603 Rf11, Rf21, Rt1h, Rt2h, Rf12, Rt1l 6 Vishay Generic 1% Thick Film 82.0 Ohms 0603 Rc22 1 Vishay Generic 1% Thick Film 5.10k 0603 Rlim1 1 Vishay Generic 1% Thick Film 3.00k 0603 Rlim2 1 Vishay Generic 1% Thick Film 100 Ohms 0603 Rc12 1 Vishay Generic 1% Thick Film 8.20k 0603 Rc11, Rc21 2 Generic 2 chan 300k to 600k PWM LFCSP-32 U1 1 Vishay Analog Devices Rev. 1 | Page 12 of 15 ADP1829ACPZ Preliminary Technical Data FCDC 00081 Table 2. Vout3 and Vout4 Bill of Materials (3.3 V and 5.0 V) Description Designator Quantity Manufacturer MFR# Capacitor Ceramic COG 680p 0603 50V Cc12 1 Vishay Generic Capacitor Ceramic X7R 1u 0603 16V Cbias, Cpv 2 Murata GRM188R71C105KA12D Capacitor Ceramic X7R 1u 0603 25V Cvcc 1 Murata GRM188R71E105KA12D Capacitor Ceramic X7R 47n 0603 16V Css1 1 Vishay Generic Capacitor Ceramic X7R 220n 0603 16V Css2 1 Vishay Generic Capacitor Ceramic COG 120p 0603 50V Cc10, Cc20 2 Vishay Generic Capacitor Ceramic X7R 100n 0603 16V Cb1, Cb2 2 Vishay Generic Capacitor Ceramic COG 33p 0603 50V Clim1, Clim2 2 Vishay Generic Capacitor Ceramic X7R 2.7n 0603 50V Cc11, Cc21 2 Vishay Generic Capacitor Ceramic COG 560p 0603 50V Cc22 1 Vishay Generic Capacitor Ceramic X7R 10u 1210 25V Cin11, Cin21 2 Kyocera CM32X7R106K25AT Capacitor Ceramic X5R 22u 1210 6.3V Co11, Co21 2 Taiyo-Yuden JMK316BJ226KL-T Diode Schottky 200mA SOD-323 30V Db1, Db2 2 Diodes inc BAT54WS No Pop Zener 200mW SOD-323 18V Din 0 Diodes inc MMSZ5248BS Inductor Ferrite 10uH 10.4mm x 10.4mm L1, L2 2 Toko B966AS-100M Single N-Channel MOSFET SOT-23 30V QL1a, QL1b, QH1a, QH1b, QH2a, QH2b, QL2a, QL2b 8 Vishay Si2304BDS 1A Thick Film 0 Ohm jumper 0603 Rf23, Rb1, Rb2 3 Vishay Generic 5% Thick Film 10 Ohms 0603 Rpv 1 Vishay Generic 1% Thick Film 200 Ohms 0603 Rin 1 Vishay Generic 1% Thick Film 10.0k 0603 2 Vishay Generic 1% Thick Film 22.0k 0603 Rpg1, Rpg2 Rf11, Rf21, Rt1h, Rel 4 Vishay Generic 1% Thick Film 3.00k 0603 Rf22 1 Vishay Generic 1% Thick Film 82.0 Ohms 0603 Rc22 1 Vishay Generic 1% Thick Film 5.10k 0603 Rlim2 1 Vishay Generic 1% Thick Film 4.70k 0603 Rlim1 1 Vishay Generic 1% Thick Film 110k 0603 Reh 1 Vishay Generic 1% Thick Film 1.00k 0603 Rf12a, Rt1la 2 Vishay Generic 1% Thick Film 3.90k 0603 Rf12b, Rt1lb 2 Vishay Generic 1% Thick Film 100 Ohms 0603 Rc12 1 Vishay Generic 1% Thick Film 5.60k 0603 Rc11 1 Vishay Generic 1% Thick Film 4.70k 0603 Rc21 1 Generic 2 chan 300k to 600k PWM LFCSP-32 U1 1 Vishay Analog Devices ADP1829ACPZ Capacitor Ceramic X7R 10n 0603 16V Css3 1 Vishay Generic Capacitor Ceramic X7R 2.2u 0805 16V Cin31, Co31 2 GRM21BR71C225KA12L 500mA 1.5V Linear Reg MSOP-8 U2 1 Murata Analog Devices Rev. 1 | Page 13 of 15 ADP1715ARMZ-1.5-R7 Preliminary Technical Data FCDC 00081 Table 3. Vout6 (12.0 V) Description Designator Quantity Manufacturer MFR# Capacitor Ceramic COG 100p 0603 50V Cc0 1 Vishay Generic Capacitor Ceramic X7R 3.3n 0603 50V Cc1 1 Vishay Generic Capacitor Ceramic X7R 1.0n 0603 50V Cc2 1 Vishay Generic Capacitor Ceramic X7R 1.0u 0603 16V Cpv 1 Murata GRM188R71C105KA12D Capacitor Ceramic X7R 100n 0603 16V Cvcc, Cb, Css 3 Vishay Generic Capacitor Ceramic COG 33p 0603 50V Clim 1 Vishay Generic Capacitor Ceramic X5R 10u 1210 25V Cin1 1 Taiyo-Yuden TMK325BJ106MN-T Capacitor Ceramic X7R 22u 1210 16V Co1 1 TDK C3225X7R1C226M No pop 6.3mm 16V SMT Co2 0 Nippon APXE160ARA101MF80G Diode Schottky 200mA SOD-323 30V Db 1 Diodes inc BAT54WS Inductor Ferrite 22uH 7.6mmx7.6mm L1 1 Toko B1047AS-220M Single N-Channel MOSFET SOT-23 30V QL1,QH1 2 Vishay Si2304BDS 5% Thick Film 10 Ohms 0603 Rin, Rpv 2 Vishay Generic 1% Thick Film 20.0k 0603 Rf1 1 Vishay Generic 1% Thick Film 1.00k 0603 Rf2a 1 Vishay Generic 1% Thick Film 56 Ohms 0603 Rf2b, Rc2 2 Vishay Generic 1% Thick Film 4.70k Ohms 0603 Rlim 1 Vishay Generic 1% Thick Film 6.80k 0603 Rc1 1 Vishay Generic 1% Thick Film 10.0k 0603 Rpg, Reh 2 Generic 1 chan 300k to 600k PWM QSOP-16 U1 1 Vishay Analog Devices Rev. 1 | Page 14 of 15 ADP1821ARQZ Preliminary Technical Data FCDC 00081 NOTES Reference designators shown on the schematic but not listed on the Bill of Materials are place holders for possible design adjustments (snubbers, additional decoupling capacitors and clamp diodes). These components should be put in the layout, but not populated unless after testing it is deemed necessary. If a different number, or different type of output capacitors are used on the switching outputs the loop compensation components may need adjustment. Efficiency calculations are estimates and are not verified in actual hardware. Any shoot-through caused by dV/dt induced turn on of the lowside FET is not included in efficiency (likely present in Rohm low side FETs). FETs with reference designators ending in a letter (i.e. a, b, or c) are connected in parallel with the other FETs of the same reference designator prefix. These FETs should be placed physically close together and have large power planes connecting all the drains together and large power planes connecting all the sources together. Gate drive resistors may be used if there is concern about possible paralleling issues. Ground symbols with an S designator should be connected together with one small plane and tied to the power ground plane at one point near the IC. Each IC should have its own S ground pour. ©2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. EB Rev. 1 | Page 15 of 15