Type BSZ076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 7.6 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSZ076N06NS3 G Package PG-TSDSON-8 Marking 076N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C2) 20 V GS=10 V, T C=100 °C 20 V GS=10 V, T C=25 °C, R thJA =50K/W J41 3) Unit A 14 Pulsed drain current4) I D,pulse T C=25 °C 80 Avalanche energy, single pulse5) E AS I D=20 A, R GS=25 Ω 118 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 75A. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) See figure 3 for more detailed information 5) Rev.2.4 See figure 13 for more detailed information page 1 2009-11-11 BSZ076N06NS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 69 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.1 R thJA=60 K/W 3) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 1.8 minimal footprint - - - 6 cm² cooling area 3) - - 60 60 - - Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=35 µA 2 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=20 A - 6.1 7.6 mΩ Gate resistance RG - 1 - Ω Transconductance g fs 20 39 - S Rev.2.4 |V DS|>2|I D|R DS(on)max, I D=20 A page 2 2009-11-11 BSZ076N06NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3000 4000 - 660 880 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 24 - Turn-on delay time t d(on) - 15 - Rise time tr - 40 - Turn-off delay time t d(off) - 20 - Fall time tf - 5 - Gate to source charge Q gs - 15 - Gate charge at threshold Q g(th) - 9 - Gate to drain charge Q gd - 3 - Switching charge Q sw - 9 - Gate charge total Qg - 37 50 Gate plateau voltage V plateau - 4.9 - Output charge Q oss - 30 40 - - 20 - - 80 - 0.85 1.2 V - 36 - ns - 32 - nC V DD=30 V, V GS=10 V, I D=20 A, R G=3.5 Ω ns Gate Charge Characteristics 6) V DD=30 V, I D=20 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) Rev.2.4 T C=25 °C V GS=0 V, I F=20 A, T j=25 °C V R=30 V, I F=20A , di F/dt =100 A/µs A See figure 16 for gate charge parameter definition page 3 2009-11-11 BSZ076N06NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 25 20 60 I D [A] P tot [W] 15 40 10 20 5 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 200 T C [°C] limited by on-state resistance 101 1 µs 10 µs 101 100 I D [A] Z thJC [K/W] 100 µs 100 0.2 0.1 10-1 1 ms 0.5 0.05 0.02 10 ms 0.01 single pulse DC 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev.2.4 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-11-11 BSZ076N06NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 80 20 10 V 6V 5.5 V 5V 18 7V 70 6V 16 60 14 R DS(on) [mΩ] 50 I D [A] 5.5 V 40 30 12 10 7V 8 10 V 6 5V 20 4 10 2 0 0 0 1 2 3 4 0 20 V DS [V] 40 60 80 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 80 80 60 60 g fs [S] I D [A] parameter: T j 40 20 20 150 °C 25 °C 0 0 0 2 4 6 8 0 20 40 I D [A] V GS [V] Rev.2.4 40 page 5 2009-11-11 BSZ076N06NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 14 5 12 4 V GS(th) [V] R DS(on) [mΩ] 10 max 8 350 µA 3 35 µA 2 typ 6 1 4 2 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 10000 Ciss 103 25°C 98% 1000 150°C 98% 102 Coss 102 I F [A] C [pF] 150 °C 100 25 °C 101 101 Crss 10 100 1 0 20 40 60 V DS [V] Rev.2.4 0 0.5 1 1.5 2 V SD [V] page 6 2009-11-11 BSZ076N06NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=20 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 125 °C 10 100 °C 12 V 25 °C 48 V V GS [V] I AV [A] 8 1 6 4 2 0.1 1 10 100 0 1000 0 10 t AV [µs] 20 30 40 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg 65 V BR(DSS) [V] 60 55 V g s(th) 50 45 Q g(th) Q sw Q gs 40 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev.2.4 page 7 2009-11-11 BSZ076N06NS3 G Package Outline Rev.2.4 PG-TSDSON-8 page 8 2009-11-11 BSZ076N06NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 page 9 2009-11-11