BA979, BA979S Vishay Semiconductors RF PIN Diodes - Single in QuadroMELF SOD-80 Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications 9612009 • Current controlled HF resistance in adjustable attenuators Mechanical Data Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Type Marking Remarks BA979 Zr > 5 kΩ BA979-GS18 or BA979-GS08 - Tape and Reel BA979S Zr > 9 kΩ BA979S-GS18 or BA979S-GS08 - Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Reverse voltage VR Unit 30 V Forward continuous current IF 50 mA Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Tj 125 °C Tstg - 55 to + 150 °C Junction temperature Storage temperature range Document Number 85533 Rev. 1.5, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BA979, BA979S Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Max Unit 1000 mV IR 50 nA f = 100 MHz, VR = 0 CD 0.5 pF f = 100 MHz, IF = 1.5 mA rf 50 Ω Forward voltage IF = 20 mA VF Reverse current VR = 30 V Diode capacitance Differential forward resistance f = 100 MHz, VR = 0 Reverse impedance BA979 zr 5 BA979S zr 9 τ IF = 10 mA, IR = 10 mA Minority carrier lifetime Min Typ. kΩ kΩ 4 µs Typical Characteristics IF - Forward Current (mA) 100 10 Tamb = 25 °C 1 Scattering Limit 0.1 0.01 0 95 9735 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 20 Π - Circuit with 10 dB Attenuation V 0 = 40 dBmV 0 f 1 = 100 MHz unmodulated - 20 - 40 - 60 - 80 0 20 40 60 80 95 9733 f 2 , modulated with 200 kHz, m = 100 % (MHz) Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2 Figure 1. Forward Current vs. Forward Voltage rf - Differential Forward Resistance (Ω) a - Typical Cross Modulation Distortion (dB) Tamb = 25 °C, unless otherwise specified 10 000 1000 100 10 1 0.001 95 9734 f > 20 MHz Tj = 25 °C 0.01 0.1 1 10 IF - Forward Current (mA) Figure 2. Differential Forward Resistance vs. Forward Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85533 [email protected], [email protected], [email protected] Rev. 1.5, 05-Aug-10 BA979, BA979S Vishay Semiconductors Package Dimensions in millimeters (inches): QuadroMELF SOD-80 1. 7 1.6 (0.063) 1.4 (0.055) gl (0 .0 as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Document Number 85533 Rev. 1.5, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 QuadroMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Document Number: 84025 Rev. 1.2, 12-Jan-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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