VISHAY BA979S

BA979, BA979S
Vishay Semiconductors
RF PIN Diodes - Single in QuadroMELF SOD-80
Features
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Applications
9612009
• Current controlled HF resistance in adjustable
attenuators
Mechanical Data
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
BA979
Zr > 5 kΩ
BA979-GS18 or BA979-GS08
-
Tape and Reel
BA979S
Zr > 9 kΩ
BA979S-GS18 or BA979S-GS08
-
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Reverse voltage
VR
Unit
30
V
Forward continuous current
IF
50
mA
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Tj
125
°C
Tstg
- 55 to + 150
°C
Junction temperature
Storage temperature range
Document Number 85533
Rev. 1.5, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BA979, BA979S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Max
Unit
1000
mV
IR
50
nA
f = 100 MHz, VR = 0
CD
0.5
pF
f = 100 MHz, IF = 1.5 mA
rf
50
Ω
Forward voltage
IF = 20 mA
VF
Reverse current
VR = 30 V
Diode capacitance
Differential forward resistance
f = 100 MHz, VR = 0
Reverse impedance
BA979
zr
5
BA979S
zr
9
τ
IF = 10 mA, IR = 10 mA
Minority carrier lifetime
Min
Typ.
kΩ
kΩ
4
µs
Typical Characteristics
IF - Forward Current (mA)
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
20
Π - Circuit with 10 dB Attenuation
V 0 = 40 dBmV
0
f 1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0
20
40
60
80
95 9733 f 2 , modulated with 200 kHz, m = 100 % (MHz)
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2
Figure 1. Forward Current vs. Forward Voltage
rf - Differential Forward Resistance (Ω)
a - Typical Cross Modulation Distortion (dB)
Tamb = 25 °C, unless otherwise specified
10 000
1000
100
10
1
0.001
95 9734
f > 20 MHz
Tj = 25 °C
0.01
0.1
1
10
IF - Forward Current (mA)
Figure 2. Differential Forward Resistance vs. Forward Current
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2
For technical questions within your region, please contact one of the following: Document Number 85533
[email protected], [email protected], [email protected]
Rev. 1.5, 05-Aug-10
BA979, BA979S
Vishay Semiconductors
Package Dimensions in millimeters (inches): QuadroMELF SOD-80
1.
7
1.6 (0.063)
1.4 (0.055)
gl
(0
.0
as 67)
s
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
2 (0.079) min.
1.25 (0.049) min.
5 (0.197) ref.
96 12071
Document Number 85533
Rev. 1.5, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
QuadroMELF SOD80
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches)
1.6 (0.063)
1.4 (0.055)
1.
7
(0
.0
gl
as 67)
s
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
2 (0.079) min.
1.25 (0.049) min.
5 (0.197) ref.
96 12071
Document Number: 84025
Rev. 1.2, 12-Jan-07
For technical questions, contact: [email protected]
www.vishay.com
1
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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1