SC1116 Linear FET Controller For DDR Supplies POWER MANAGEMENT Description Features The SC1116 is a low cost controller for low power linear DDR power supplies. User can select FETs to optimize system current The SC1116 comes in a space saving SOT-23 6 pin package. The SC1116 provides a dual gate drive for the top serial and bottom parallel MOSFETs with internal shoot through protection. The wide range of input voltages (3V to 15V) allows the chip to work in many various applications. rating/dropout/cost Low VDDQ, 0.5V to 2.5V -40°C to +85°C operating temperature External compensation capable for low ESR loads Minimum external components 0.6 mA Quiescent current Guaranteed no shoot through SOT-23 6L small package. Fully WEEE and RoHS compliant Applications The variable output voltage is programmable from the outside with an input divider or an external reference. Wide range of VDDQ, down to 0.5V DDR supplies SCSI Line termination Source / Sink LDOs Typical Application Circuit Q1 MOS FET N VDDQ=2.5Vtyp R1 1k 0.5% VTT=1.25Vtyp 4 7uF typ U1 SC1116 Vcc=3 to 15V 1 VCC DRVH 6 2 GND FB 5 3 REF DRVL 4 GND 0 .1 uF R2 1k 0.5% Q2 MOS FET N 1k typ 0 .1 uF 4 .7 nF typ 1k typ 4 .7 nF typ Notes: (1) Values used for optional compensation are 1K and 4.7nF typical. (2) When using 3V as Vcc, use of low threshold FETs is a must. Revision: March 28, 2007 1 www.semtech.com SC1116 POWER MANAGEMENT Absolute Maximum Rating Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Parameter Symbol Maximum Units Input Supply Voltage VCC -0.3 to +16.5 V Operating Ambient Temperature Range TA -40 to +85 °C Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Thermal Impedance Junction to Ambient θJ A 95.7 °C/W Thermal Impedance Junction to Case θJ C 61.7 °C/W Power Dissipation at TA = 25°C PD 250 mW Lead Temperature (Soldering) 10 seconds TLEAD 300 °C ESD Rating (Human Body Model) ESD 2 kV Electricial Characteristics Unless otherwise specified, VCC = 5V, 0.5V ≤ VDDQ ≤ 2.5V, R1 = R2 = 1kΩ +/- 0.1%. Specifications with standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range (TA = -40°C to +85°C). Parameter Test Conditions Supply Voltage Load Regulation (1) Quiescent Current/Standby Current FB & REF Input Current Min Typ 3 IL: 0 + 3A IL: 0 - 3A -1 +1 VCC = 15V, no load = 0A 600 V C C = 15V Max Units 15 V % 800 µA 100 nA 0.25 V Gate Drive Output Low ISINK = 2.5mA Output High ISOURCE = 2.5mA 0.15 Vcc -0.25 Vcc -0.15 V Note: (1) For Load Regulation testing use a low duty cycle current pulse, when measuring VTT. 2007 Semtech Corp. 2 www.semtech.com SC1116 POWER MANAGEMENT Pin Configuration Ordering Information Part Number TOP VIEW Top Mark P ackag e AH00 SOT-23 6L SC1116ISKTR (1) SC1116ISKTRT (1)(2) VCC 1 6 DRVH GND 2 5 FB REF 3 4 DRVL Notes: (1) Only available in tape and reel packaging. A reel contains 3000 devices. (2) Lead free option. Fully WEEE and RoHS compliant. (SOT-23 6L) Pin Descriptions Pin # Pin Name Pin Function 1 VC C Supply pin, connect a 3V to 15V supply and decouple to ground with a 0.1µF ceramic capacitor. 2 GND Power and signal ground. 3 REF Reference input. Output voltage will be regulated to this voltage. 4 DRVL 5 FB 6 DRVH Low side FET drive output. Feedback pin. High side FET drive output. Block Diagram 2007 Semtech Corp. 3 www.semtech.com SC1116 POWER MANAGEMENT Application Information Overview The SC1116 linear controller is designed to meet the JEDEC specifications for termination of DDR-SDRAM. Double Data Rate (DDR) memory is clocked at the same speed as older SDRAM (synchronous dynamic random access memory), yet handles twice the amount of data by using the rising and falling edge of the clock signal for data transfers. Another difference is that DDR memory requires 2.5V instead of 3.3V used by standard SDRAM. The other feature that separates DDR memory from a conventional type is employment of the VTT – termination voltage. Main requirements for the VTT are that it must track variations of VDDQ and be able to supply (source) current, and absorb (sink) current. The SC1116 controller offers a low cost solution for DDR termination voltage regulation by using external pass elements (MOSFETs). Having the flexibility of choosing the MOSFETs allows for optimization on the basis of cost/ size/performance of the specific application. Test Circuit & Waveforms The test circuit is shown below in Figure 1. Note that VREF voltage is supplied externally to eliminate inaccuracy caused by resistor divider. V TT =1.25V typ Q1 IR37 14 V DDQ=2.5V +/-3A Iso urce/ Isink Isin k 3A Isource Po wer Su pp ly C1 1 00 uF 3 2m U1 SC1116 1 V cc=5V C2 1 uF V ref=1.25V C3 0 .1uF VCC 2 G ND 3 R EF C6 2 70 uF DRVH 2 2m 6 2xIsin k 0A to 6A Step FB 5 DRVL 4 Pu lse loa d, dc=50% Q2 IR37 14 R3 1k R4 1k C4 4.7nF Cu rrent Pro be E lectronic Loa d C5 4 .7nF Figure 1. 2007 Semtech Corp. 4 www.semtech.com SC1116 POWER MANAGEMENT Typical Characteristics Regulation Vtt vs. Vref @ Is/s=5A; Vcc=5V 2.0% 2.0% 1.0% 1.0% 0.0% 0.0% -1.0% -1.0% dVtt / Vtt dVtt / Vtt Regulation Vtt vs. Vref @ Is/s=1A; Vcc=5V -2.0% -2.0% -3.0% -3.0% -4.0% -4.0% -5.0% -5.0% 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 1.3 0.3 0.4 0.5 0.6 2.0% 1.0% 1.0% 0.0% 0.0% -1.0% -1.0% dVtt / Vtt dVtt / Vtt 2.0% -2.0% -3.0% -4.0% -4.0% -5.0% -5.0% 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.1 1.2 1.3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Vref (Vddq/2), V Vref (Vddq/2), V 2007 Semtech Corp. 1.0 -2.0% -3.0% 0.4 0.9 Regulation Vtt vs. Vref @ Is/s=5A; Vcc=12V Regulation Vtt vs. Vref @ Is/s=1A; Vcc=12V 0.3 0.8 Vref (Vddq/2), V Vref (Vddq/2), V 0.2 0.7 5 www.semtech.com SC1116 POWER MANAGEMENT Typical Characteristics (Cont.) Max. Sourcing Current vs. V CC 6 V DDQ = 2.5V V REF = 1.25V V TT = 1.237V OUTPUT CURRENT (A) 5 4 3 2 1 0 3 3.5 4 4.5 5 5.5 SUPPLY VOLTAGE, V CC (V) 6 6.5 Max. Sinking Current vs. V CC 4.4 V DDQ = 2.5V V REF = 1.25V V TT = 1.263V 4.3 OUTPUT CURRENT (A) 4.2 4.1 4 3.9 3.8 3.7 3.6 3 2007 Semtech Corp. 3.5 4 4.5 5 5.5 SUPPLY VOLTAGE, V CC (V) 6 6 6.5 www.semtech.com SC1116 POWER MANAGEMENT Typical Characteristics (Cont.) Quie s ce nt Current vs . Te m pe rature 520 V CC = 5V V DDQ = 2.5V V REF = 1.25V V TT = 1.25V ILOAD = 0A QUIESCENT CURRENT (uA 510 500 490 480 470 460 450 -40 -25 -10 5 20 35 50 65 TEMPERATURE °C 80 110 125 Quiescent Current vs. V CC 800 V DDQ = 2.5V V REF = 1.25V V TT = 1.25V ILOAD = 0A 700 600 QUIESCENT CURRENT (uA) 95 125 oC 500 400 25 oC 0 oC 300 200 100 0 3 2007 Semtech Corp. 3.5 4 4.5 5 5.5 SUPPLY VOLTAGE, V CC(V) 7 6 6.5 www.semtech.com SC1116 POWER MANAGEMENT Test Waveforms VTT Transient Response VCC = 5V VDDQ = 2.5V VREF = 1.25V VTT 100mV/div ISOURCE / ISINK ISOURCE / ISINK VTT 100mV/div VCC = 5V VDDQ = 2.5V VREF = 1.25V I STEP : +2.3A to - 2.2A I STEP : +1.75A to –1.75A Slew Rate: 2.5 A/uS Slew Rate: 2.5 A/uS Time (50us/div) Time (50us/div) Slew Rate: 2.5 A/uS I STEP : - 0.75A to + 0.75A ISOURCE / ISINK VTT 100mV/div ISOURCE / ISINK I STEP : +1.25A to –1.25A Slew Rate: 2.5 A/uS Time (50us/div) Time (50us/div) 2007 Semtech Corp. VCC = 5V VDDQ = 2.5V VREF = 1.25V VTT 100mV/div VCC = 5V VDDQ = 2.5V VREF = 1.25V 8 www.semtech.com SC1116 POWER MANAGEMENT Test Waveforms (Cont.) VTT Transient Response I STEP : - 0.5A to + 0.53A ISOURCE / ISINK I STEP : - 0.53A to + 0.53A ISOURCE / ISINK VCC = 5V VDDQ = 2.5V VREF = 1.25V COUT = 47uF ceramic VTT 100mV/div VTT 100mV/div VCC = 5V VDDQ = 2.5V VREF = 1.25V Slew Rate: 2.5 A/uS Slew Rate: 2.5 A/uS Time (50us/div) Time (50us/div) VCC = 5V VDDQ = 2.5V VREF = 1.25V VTT 50mV/div VTT 20mV/div VCC = 5V VDDQ = 2.5V VREF = 1.25V I STEP : + 0.03A to - 2.25A ISOURCE / ISINK ISOURCE / ISINK I STEP : + 0.03A to + 2.25A Slew Rate: 2.5 A/uS Time (20us/div) Time (20us/div) 2007 Semtech Corp. Slew Rate: 2.5 A/uS 9 www.semtech.com SC1116 POWER MANAGEMENT Evaluation Board Top View Top Layer Evaluation Board Schematic Q1 IR3714 VDDQ=2.5Vtyp C1 22uF R1 1k 0.5% C6 47uF U1 SC1116 Vcc=3 to 15V C2 0.1 R2 1k 0.5% VTT=1.25Vtyp 1 VCC DRVH 6 2 GND FB 5 3 REF DRVL 4 Q2 IR3714 R3 1k C3 0.1 GND C4 4.7nF R4 1k C5 4.7nF Notes: (1) Values used for optional compensation are 1K and 4.7nF typical. (2) When using 3V as Vcc, use of low threshold FETs is a must. 2007 Semtech Corp. 10 www.semtech.com SC1116 POWER MANAGEMENT Outline Drawing - SOT-23-6 DIM A e1 2X E/2 A A1 A2 b c D E1 E e e1 L L1 N 01 aaa bbb ccc D N EI 1 E 2 ccc C 2X N/2 TIPS e B D aaa C A2 SEATING PLANE DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .057 .035 .000 .006 .035 .045 .051 .010 .020 .003 .009 .110 .114 .122 .060 .063 .069 .110 BSC .037 BSC .075 BSC .012 .018 .024 (.024) 6 0° 10° .004 .008 .008 A H A1 C bxN bbb 1.45 0.90 0.15 0.00 .90 1.15 1.30 0.25 0.50 0.08 0.22 2.80 2.90 3.10 1.50 1.60 1.75 2.80 BSC 0.95 BSC 1.90 BSC 0.30 0.45 0.60 (0.60) 6 0° 10° 0.10 0.20 0.20 c GAGE PLANE C A-B D 0.25 L 01 (L1) SEE DETAIL A DETAIL A SIDE VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Minimum Land Pattern - SOT-23-6 X DIM (C) G Z Y P C G P X Y Z DIMENSIONS MILLIMETERS INCHES (.098) .055 .037 .024 .043 .141 (2.50) 1.40 0.95 0.60 1.10 3.60 NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2007 Semtech Corp. 11 www.semtech.com