Defense & Security Solutions RF Modules and Subsystems RF-Modules-Subsystems-Brochure-v2.indd 2 5/11/15 2:01 PM 1 RF-Modules-Subsystems-Brochure-v2.indd 1 5/11/15 2:01 PM RF Microwave and Millimeter Wave Solutions for Defense & Security Microsemi Corporation continues to build its RF Microwave and Millimeter Wave Solutions group, expanding its portfolio of industry leading Defense and Homeland Security products. Microsemi also supports a wide range of high-reliability semiconductor products including: Si and GaAs diodes, high power Si, SiC and GaN transistors, GaAs and SiGe MMICs. Defense & Security Products Our Application Experience Includes: Our subsystems deliver integrated modules that fit • • • • • • • • seamlessly into your system architecture. Our modules utilize advanced, custom-designed semiconductors to provide optimized solutions for our customer applications. Our subsystem packaging technologies encompass SMT, discrete hybrid MIC circuits, custom MMICs and bare die COB. Millimeter Wave Personnel Imagers & Perimeter “Fences” Unmanned Aerial Vehicles (UAV) Airborne Surveillance Platforms Radar Warning Receivers (RWR) Missile Front-ends, Exciters, and Fuzes Intelligent Battlefield Communications Autonomous Landing Systems Phased-Array, Monopulse and Fire Control Radar Microsemi RF Microwave and Millimeter Wave Solutions combines products, technologies, experience, and resources of the world’s premier RF components suppliers. Today, our portfolio is unmatched in both breadth and depth, providing incomparable capabilities for our RF customers. 2 RF-Modules-Subsystems-Brochure-v2.indd 2 5/11/15 2:01 PM Product Line Overview • Low Noise Amplifiers 0.01 - 40 GHz • Surface Mount Amplifiers 0.01 - 18 GHz • Broadband band Amplifiers 0.01 - 40 GHz • Ultra Low Phase Noise Amplifiers 0.5 - 40 GHz • High Power Narrow Band Amplifiers 0.5 - 40 GHz, up to 3.7 kW • High Power Broadband Amplifiers 0.5 - 40 GHz, up to 100W • High Power Rack Mount Amplifiers 0.5-40 GHz, up to 300W • Millimeter Wave Amplifiers 26.5 - 75 GHz • Multipliers 4 - 110 GHz output frequency • Up/Down Converters RF/LO frequencies up to 110 GHz IF frequencies to 20 GHz • Transceivers Frequency capability up to 110 GHz • Multi-function Assemblies Frequency capability up to 110 GHz 3 RF-Modules-Subsystems-Brochure-v2.indd 3 5/11/15 2:02 PM Low Noise Amplifiers Microsemi-RFMS Low Noise Amplifier series exhibits outstanding noise figure. Units incorporate single ended, distributed or balanced gain stages optimized for the intended application. Multi-octave distributed amplifiers provide the highest gain-bandwidth product. Low noise figure and flatness is achieved. Model Number Frequency Range (GHz) Gain (dB) min Flatness (±dB) max NF (dB) max P1dB (dBm) min OIP3 (dBm) nom AML016L2814 AML0118L2512 AML18L3001 AML33L3201 AML48L3002 AML45L2802 AML56L2802 AML618L4011 AML812L3003 AML910L3003 AML1213L3002 AML1617L3002 0.1 - 6.0 0.1 - 18.0 1.0 - 8.0 3.1 - 3.6 4.0 - 8.0 4.4 - 5.0 5.9 - 6.4 6.0 - 18.0 8.0 - 12.0 9.5 - 10.5 12.2 - 13.2 16.0 - 17.0 28 24.8 30 32 30 28 28 40 30 30 30 30 1.25 1.5 2 1 1 1 1 2 1.5 1 1 1 1.3* 2.5* 1.8 0.6 1 0.7 0.7 1.6 1.3 1.2 1.3 1.4 7 6 13 18 10 10 10 10 10 10 10 10 14 16 22 28 20 18 18 20 18 18 18 18 VSWR (In/Out) nom 2.0:1 2.0:1 1.8:1 1.8:1 1.8:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 Voltage (V), Current (mA) 12V, 190mA 12V, 160mA 12V, 110mA 12V, 150mA 12V, 100mA 12V, 100mA 12V, 100mA 12V, 220mA 12V, 150mA 12V, 150mA 12V, 150mA 12V, 150mA *above 500 MHz Surface Mount Amplifiers Microsemi-RFMS surface mount (SMT) amplifiers support the need for physically smaller systems by eliminating cable interconnects and increasing packaging densities. Catalog surface mount low noise and medium power gain blocks can be cascaded in a microstrip transmission line environment. We also offer a unique approach to manage higher power and high frequency (up to 18 GHz) applications with our “SMP Plug-in” modules. Model Number Frequency Range (GHz) Gain (dB) min Flatness (±dB) max NF (dB) max P1dB (dBm) min AML012P2611-S AML056L2812-S AML26P1711-S AML23L2511-S AML33L2511-S AML55L2511-S AML612L2212-S AML612P2011-S AML618P1211-S 0.1 - 2.0 0.5 - 6.0 2.0 - 6.0 2.8 - 3.1 3.1 - 3.7 5.4 - 5.9 6.0 - 12.0 6.0 - 12.0 6.0 - 18.0 26 28 17 24 24 23 20 18 12 1 1.5 1 0.5 0.75 0.75 1 1 1 1.5* 1.6 6 0.9 1 1.1 3 5 6.5 21 5 25 10 10 10 15 27 27 VSWR (In/Out) nom 2.0:1 2.0:1 1.8:1 1.6:1 1.6:1 1.6:1 1.8:1 1.8:1 1.8:1 Voltage (V), Current (mA) Package 9V,215mA 5V,150mA 9V,480mA 5V,90mA 5V,90mA 5V,90mA 5V,90mA 9V,350mA 12V,450mA SMT-2 SMT08 SMT-2 SMT08 SMT08 SMT08 SMTH2 SMTH2 SMP2 *above 500 MHz 4 RF-Modules-Subsystems-Brochure-v2.indd 4 5/11/15 2:02 PM Product Line Overview Broadband Amplifiers Multi-octave distributed amplifiers provide the highest gain-bandwidth product. These amplifiers exhibit outstanding performances in flatness, noise figure and output power. Model Number Frequency Range (GHz) Gain (dB) min Flatness (±dB) max NF (dB) max P1dB (dBm) min OIP3 (dBm) nom AML0118P3201 AML0126P3002 AML120P3201 AML118P2703 AML240L2201 AML618P4202 AML1840P2802 0.1 - 18.0 0.1 - 26.5 1.0 - 20.0 1.0 - 18.0 2.0 - 40.0 6.0 - 18.0 18.0 - 40.0 32 30 32 27 22 42 35 3 3 3.5 2 3 2.5 3 3.5* 6.0* 5 4 6 3 6.5 26* 22 27 27 15 35 22 32* 30 32 34 25 42 28 VSWR (In/Out) nom 2.5:1 2.0:1 2.0:1 2.0:1 2.0:1 1.8:1 2.0:1 Voltage (V), Current (mA) 15V,750mA 12V,600mA 15V,1500mA 15V,525mA 12V,350mA 12V,2200mA 12V,800mA *above 500MHz Ultra Low Phase Noise Amplifiers Microsemi-RFMS Low Phase Noise Amplifiers utilize MMICs and discrete transistors with the lowest phase noise available in the industry. Silicon bipolar is the preferred transistor technology for lowest phase noise followed by InGaP HBT, then MESFET. These technologies are used to best meet customer requirements. 100% testing, device lot selection, and on-wafer variations are monitored to guarantee compliant performance. Frequency Range (GHz) Gain (dB) min AML083PNA1801 0.8 - 3.0 AML26PNA1001 2.0 - 6.0 AML26PNC1511 2.0 - 6.0 AML218PNA3213 2 - 18 AML69PNA1601 6.0 - 9.0 AML69PNC1511 6.0 - 9.0 AML612PNA1411 6.0 - 12.0 AML812PNB1813 8.0 - 12.0 AML812PNA0803 8.0 - 12.0 AML1518PNA1711 15.0 - 18.0 AML4040PNB1511 40.0 18 10.5 15 32 16 14 14 18 8 14 15 Model Number 5 RF-Modules-Subsystems-Brochure-v2.indd 5 Flatness (±dB) max 1 1 2 2.5 1 1 1 2 1.5 0.5 2 Phase Noise 100Hz 1KHz 10KHz 100KHz 1MHz -150 -150 -145 -125 -140 -145 -143 -150 -145 -135 -135 -160 -160 -155 -140 -150 -155 -150 -160 -153 -145 -146 -166 -168 -160 -145 -155 -160 -155 -168 -160 -155 -150 -170 -174 -165 -155 -160 -165 -160 -172 -165 -163 -155 -173 -175 -170 -160 -165 -170 -167 -175 -168 -167 -160 NF (dB) max P1dB (dBm) min VSWR (In/Out) nom Voltage (V), Current (mA) 5 6 7 4 6.5 8 6 7 6 6 - 17 16.5 34 25 23 34 25 17 25 26 24 2.5:1 1.5:1 1.5:1 2.0:1 1.8:1 1.4:1 2.0:1 1.5:1 1.8:1 1.8:1 2.0:1 12V,100mA 8V,115mA 12V,2700mA 12V,500mA 12V,450mA 12V,2300mA 12V,500mA 12V,250mA 12V,250mA 12V,500mA 6V,1200mA 5/11/15 2:02 PM High-Power Narrow Band Amplifiers This family of amplifiers covers most communication and radar bands, as well as other popular frequency bands. Internally matched GaAs FET devices are frequently used. They provide cost effective solutions with excellent linearity. Higher frequencies utilize in-house proprietary technology to deliver as much as 10 watts at 34 GHz. All amplifiers use in-house proprietary technology in the driver and preamplifier stages, providing wide flexibility in the selection of gain and generally allowing a somewhat wider band than specified for the internally matched device. It also provides desirable characteristics, such as the combination of low noise with high-power. Model Number L0505-50 L0910-45 L0809-45 L2426-40 L3236-38 L3434-40 MSC2931P3540 MSC010P4355 Frequency Range (GHz) 5.3-5.9 9.0-10.5 8.5-9.6 24.0-26.0 32.0-36.0 34.0-34.5 29.5-31.0 1.02-1.04 Psat (dBm) 50 45 45.5 39.5 38 40 40 66 Psat (W) 100 30 35 9 6.3 10 10 3700 P1dB (dBm) 49 44 44.5 39 37 39 N/A Gain (dB) min 50 45 50 40 40 45 35 40.65 Vd (VDC) Id (A) 15 15 15 12 12 12 5 52 40 20 22 17 17 17 19 10 High-Power Broadband Amplifiers Based on in-house proprietary technology, specifically developed to achieve the highest possible power/bandwidth combination, this family of amplifiers includes several models with exceptional performance, such as 40 watts of power from 6 to 18 GHz or 6 watts from 33 to 37 GHz. The modular construction of these amplifiers, combined with the tunability of the basic modules, gives rise to an enormous variety. The list of basic models is far from exhaustive and should be considered an indication of capability. Most requests can be fulfilled with a combination of existing modules, thus offering a customized amplifier at the same price and delivery as a standard model. Model Number L0206-43 L0618-40 L0618-43 L0618-46 L0812-46 L1826-36 L1840-27 L2640-32 L2632-37 L3640-37 L0618-50-T523 RF-Modules-Subsystems-Brochure-v2.indd 6 Frequency Range (GHz) 2.0-6.0 6.0-18.0 6.0-18.0 6.0-18.0 8.0-12.0 18.0-26.0 18.0-40.0 26.0-40.0 26.0-32.0 36.0-40.0 6.0-18.0 Psat (dBm) 43 40 43 46 46 36 26.5 32 37 37.5 50 Psat (W) 20 10 20 40 40 4 0.45 1.6 5 5.6 100 P1dB (dBm) 42 38.5 41.5 44 44 35 25 31 36 36 N/A Gain (dB) 40 40 45 47 45 38 30 35 38 40 50 Vd (VDC) 12 12 12 12 12 12 12 12 12 12 28-36 Id (A) 32 12 25 52 28 8 4 5 10 17 35 6 5/11/15 2:02 PM Product Line Overview High-Power Rack Mount Amplifiers Microsemi-RFMS highest-power amplifiers are based on novel coaxial and waveguide combiners. Products are available in selected bands from 0.8 to 40 GHz. Most of our standard amplifier modules can be combined, giving rise to a wide choice of bands, power outputs, and gains. Also, since we keep a large stock of basic modules, delivery times are as short as eight weeks for many of the most popular bands. Model Number C033036-51 C090105-50 C0812-46 C0618-43 C0618-46 C095110-53 C059064-55 Frequency Range (GHz) Psat (dBm) 3.3-3.6 9.0-10.5 8.0-12.0 6.0-18.0 6.0-18.0 9.5-11 5.9-6.4 Psat (W) 125 100 40 20 40 53 55 P1dB (dBm) 50 49 44 41.5 44.5 200 300 50 49 44 41.5 44.5 Pac (kW) 1 1 0.4 0.3 0.75 Height (in) 52 3 10.25 8.75 8.75 5.25 5.25 8.75 Millimeter Wave Amplifiers With more than two decades of experience and a worldwide customer base, Microsemi-RFMS is an established, leading-edge manufacturer of RF, microwave, and millimeter-wave amplifiers. Employing the latest eutectic attachment, ultrasonic/thermal compression bonding, and automated high precision assembly techniques, Microsemi-RFMS amplifiers offer the most predictable and repeatable electrical performance in the industry. With a vast library of existing MIC modules, incorporating the finest MESFET, pHEMT, and HBT semiconductors, Microsemi-RFMS is the answer when you need to push the boundaries of electrical performance. Model Number MSC1840L3001 MSC1840L3201 MSC2640L3701 MSC4060L3001 MSC6065L2001 Frequency Range (GHz) Gain (dB) min Flatness (±dB) max P1dB (dBm) min Noise Figure (dB) max 18.0 - 40.0 18.0 - 40.0 26.0 - 40.0 40.0 - 60.0 60.0 - 65.0 30 32 37 30 20 2 2.5 2 3 1.5 10 15 10 10 10 4.5 5.5 3 8.5 8.5 VSWR (In/Out) nom 2.25:1 2.2:1 2.25:1 3.0:1 3.0:1 DC Current (mA) 350 440 275 300 250 7 RF-Modules-Subsystems-Brochure-v2.indd 7 5/11/15 2:02 PM High Power Gallium Nitride (GaN) Amplifiers Microsemi-RFMS Gallium Nitride (GaN) amplifier products employ the latest semiconductor technologies and present the very best performance to our customers. Multi-octave amplifiers and application specific narrow band amplifiers cover frequencies to 18.0 GHz. GaN amplifiers operate with voltages between +28VDC to +50VDC (design dependent). Catalog designs offer power levels up to 100 watts; custom designs to 300 watts are available. Standard options such as TTL on/off, Integrated Output Isolator, Over-Temperature Shut-down, Power Detectors at various frequency and gain specifications are available. Frequency Range (GHz) Gain (dB) min Psat (dBm) min Psat (dBm) typ. Psat (Watts) typ. Voltage (V), Current (A) PAE typ. Dimensions (in) AML056P4013 AML056P4014 AML056P4511 AML056P4512 AML13P5013 AML26P4011 AML26P4012 AML26P4013 AML59P4512 AML59P4513 MSC58P4549 0.5 - 6.0 0.5 - 6.0 0.5 - 6.0 0.5 - 6.0 1.0 - 3.0 2.0 - 6.0 2.0 - 6.0 2.0 - 6.0 5.5 - 9.0 5.5 - 9.0 5.5 - 8.0 40 40 45 45 50 40 45 50 45 45 45 35 37 40 43 3 41 43 45.5 44 46 49 36 38 41 44 6 42 44 46.5 44.5 48 49.5 4 6 10 25 46 12 25 44 28 50 80 10% 12% 25% 23% 25% 35% 30% 25% 25% 25% 20% 3.0” x 1.8” x 0.45” 3.0” x 1.8” x 0.45” 4.0” x 1.73” x 0.48” 3.13” x 2.2” x 0.7” 3.0” x 1.8” x 0.45” 3.0” x 1.8” x 0.45” 3.0” x 1.8” x 0.45” 3.0” x 1.8” x 0.45” 2.45” x 2.09” x 0.41” 2.45” x 2.09” x 0.41” 3.2” x 3.2” x 0.49” AML910P4213 9.9 - 10.7 43 37 38 6 30% 3.0” x 1.8” x 0.45” AML910P4214 9.9 - 10.7 43 39 40 10 30% 3.6” x 3.4” x 0.67” AML910P4215 9.9 - 10.7 46 42 43 20 25% 3.6” x 3.4” x 0.67” AML811P5011 AML811P5012 AML811P5013 AML618P4014 AML618P4015 AML218P4012 AML218P4011 AML218P4013 AML1314P4511 AML1314P4512 AML1416P4511 AML1416P4512 MSC56P5050 MSC56P4544 MSC56P4042 MSC2930P1741 7.8 - 11.0 7.8 - 11.0 7.8 - 11.0 6.0 - 18.0 6.0 - 18.0 2.0 - 18.0 2.0 - 18.0 2.0 - 18.0 13.75 – 14.50 13.75 – 14.50 14.0 – 16.0 14.0 – 16.0 5.0 - 6.0 5.0 - 6.0 5.0 - 6.0 29-30 45 50 50 40 40 35 40 38 45 45 45 45 50 45 40 15 43 45.5 48 39 42 37 39 41 42 44.5 41.5 44 48 42 40 40 44 4.5 49 40 43 38 40 43 43 45 42 44.5 50 44 42 41.5 25 44 80 10 20 6 10 20 20 32 16 27 80 25 16 14 28V, 2.0A 48V, 2.0A 40V, 1.5A 50V, 1.5A 28V, 5.0A 28V, 1.5A 28V, 3.0A 28V, 6 A 28V, 4.0A 28V, 8.0A 28V/12.0A 12V, 0.4A 32V, 0.5A 12V, 0.4A 32V, 0.8A 12V, 1.0 A 32V, 1.3A 28V, 2.8A 28V, 5.5A 28V, 11.5A 32V, 2.8A 32V, 4.9A 32V, 1.5A 32V, 2.8A 32V, 4.9A 30V, 2.3A 30V, 4.6A 35V, 3.2A 35V, 6.2A 30V, 11.0A 30V, 2.8A 30V, 1.8A 28V, 2.2A 30% 23% 25% 12% 12% 13% 12% 12% 20% 19% 20% 18% 30% 30% 30% 23% 2.45” x 2.09” x 0.41” 2.45” x 2.09” x 0.41” 3.2” x 3.2” x 0.49” 1.75” x 1.75” x 0.43” 2.45” x 2.09” x 0.41” 1.75” x 1.75” x 0.43” 1.75” x 1.75” x 0.43” 3.0” x 1.8” x 0.45” 2.45” x 2.09” x 0.41” 2.45” x 2.09” x 0.41” 2.45” x 2.09” x 0.41” 2.45” x 2.09” x 0.41” 3.0” x 1.8” x 0.45” 3.0” x 1.8” x 0.45” 3.0” x 1.8” x 0.45” 2.0” x 3.0” x 0.5” Model Number 8 RF-Modules-Subsystems-Brochure-v2.indd 8 5/11/15 2:02 PM Product Line Overview Multipliers Microsemi frequency multipliers include a comprehensive line of doublers, triplers, quadruplers, and higher order multiplication schemes up to N = 80. Narrowband passive diode-based models provide superior phase noise to within 1 dB of the theoretical limit of 20 Log N. Active models using FETs or PHEMTs typically have broader bandwidth and slightly higher phase noise, but allow the multiplier module to also provide gain, if necessary. Options include operating voltages from +5V to +24V, and DC bias can be configured for minimal current drain when battery operation is required. Our capability provides multiplier output frequencies from 4 GHz up to 110 GHz. Depending on desired filtering and amplification, output power levels can exceed 2 watts. • 4 to 110 GHz output frequency capability • Multiplication factors from X2 to X80 • Broadband models: octave plus bandwidth • Narrowband models: 5 to 20% bandwidth • Popular output bands (GHz): 18-26.5, 26-40, 40-60 Parameter Input Frequency Output Frequency Input Power Output Power Harmonics DC Supply Unit Doubler Active Tripler Passive Quadrupler Active GHz GHz dBm dBm dBc V/mA 10-20 20–40 +10 +10 -20 +12/240 4.5-5 13.5–15 +15 +1 -20 0/0 6.6-10 26–40 +10 +15 -15 +12/410 Up/Down Converters Microsemi’s up/down-converter capability spans a wide range of RF & LO frequencies up through 110 GHz, with IF coverage to 20 GHz. A typical lineup for an integrated downconverter assembly includes an RF chain consisting of a low-noise amplifier (LNA), image reject filter, a mixer, and an IF output amplifier stage. Similarly, a typical up-converter lineup begins with an IF pre-amplifier and filter, a mixer, followed by an LO-reject filter and power amplifier chain on the RF output. Various LO configurations are available, and mixer options include single-balanced, double-balanced, triple-balanced, image reject, and sub-harmonic configurations. An optional phase locked source can also be integrated to provide a self-contained on-board synthesizer for generating the LO signal. The complete assemblies are housed in a compact hermetic case and configured with either coaxial or waveguide connectors. • Up/down-converters to 110 GHz • IF coverage to 20 GHz • Super-heterodyne, image/LO reject, and sub-harmonic topologies • Up-converter output power to +2W • Down-converter noise figure to < 3 dB Parameter Unit Down-converter Up-converter RF Start Freq RF Stop Freq LO Start Freq LO Stop Freq IF Freq Conversion Gain Flatness (50 MHz) Noise Figure Intercept Point Input VSWR Output VSWR LO Input Power GHz GHz GHz GHz GHz dB dB dB dBm :1 :1 dBm 21.2 22.4 6.65 7.05 1.25 22 ± 0.25 5.5 -7 (input) 1.92 1.75 5 22.4 23.6 6.65 7.05 2.45 29 ± 0.25 18 32 (output) 2.0 1.8 8 9 RF-Modules-Subsystems-Brochure-v2.indd 9 5/11/15 2:02 PM Transceivers You need a transmitter. You need a receiver. And you need them combined into a highperformance, reliable T/R module solution that makes integration into your overall system architecture a breeze. We’ve become experts in eliminating cross-talk between transmit and receive electronics—avoiding noise figure degradation due to digital logic, modulation, and control signal interference—and suppressing LO leakage that might otherwise weigh down your transmitter linearity. When you need that extra level of precision and accuracy, Microsemi will embed digital “smarts” with a micro-controller for automatic adjustment of transceiver parameters. Transceivers are our business, and they exemplify our dedication to providing truly superior integrated modules for high-frequency applications. They are delivered to your exact specifications and come in a variety of form factors. • • • • • • • • • Frequency capability up through 110 GHz Integrated transmit, receive, and LO circuitry Embedded micro-controller enables “adaptive modulation” LO multiplication factor, XN (N = 1 to 12) Receiver noise figures to 2 dB Transmit output power to +2W Linear or non-linear operation Low spurious emissions Environmentally sealed and tested at temperatures from -54°C to +100°C Multi-Function Assemblies If you can imagine it—and the laws of physics allow it—we can custom design it for you. Drawing from our unparalleled circuit library of great depth and breadth, Microsemi integrates several signal-conditioning functions into a single, efficient, high-performance Multi-Function Assembly (MFA). Common MFA functions include amplifiers, multipliers, down converters, filters, equalizers, analog/digital attenuators, detectors and integrated microcontrollers. These integrated solutions carry cost, size and reliability advantages by eliminating cables, waveguides and interconnects. From wide dynamic range limiting amplifier distribution systems to complete RF front-ends, our custom MFA capability positions Microsemi as a one-stop shop covering all of your RF, microwave and millimeter-wave requirements. In addition to unsurpassed design capability, we also provide our customers with build-toprint assembly and test services of their proven MFA designs. Our high-volume business base enables us to amortize overhead expenses over a large number of units, leverage our materials purchasing power, and reduce manufacturing costs of your MFAs. Take advantage of our automation, innovation, and experience by letting us put our contract manufacturing resources to work for you. 10 RF-Modules-Subsystems-Brochure-v2.indd 10 5/11/15 2:02 PM Microsemi is continually adding new products to it industry-leading portfolio. For the most recent updates to our product line and for detailed information and specifications, please call, email or visit our website: Toll-free: 800-713-4113 [email protected] www.microsemi.com Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information.Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: [email protected] www.microsemi.com RF-Modules-Subsystems-Brochure-v2.indd 1 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiationhardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet solutions; Powerover-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,600 employees globally. Learn more at www.microsemi.com. ©2015 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. RFMS-05-15 5/11/15 2:01 PM