256 kb Parallel EEPROM

CAT28C257
256 kb CMOS Parallel
EEPROM
Description
The CAT28C257 is a fast, low power, 5 V−only CMOS Parallel
EEPROM organized as 32K x 8−bits. It requires a simple interface for
in−system programming. On−chip address and data latches,
self−timed write cycle with auto−clear and VCC power up/down write
protection eliminate additional timing and protection hardware. DATA
Polling and Toggle status bits signal the start and end of the self−timed
write cycle. Additionally, the CAT28C257 features hardware and
software write protection.
The CAT28C257 is manufactured using ON Semiconductor’s
advanced CMOS floating gate technology. It is designed to endure
100,000 program/erase cycles and has a data retention of 100 years.
The device is available in JEDEC approved 28−pin DIP or 32−pin
PLCC packages.
•
•
•
•
•
•
•
A0−A14
– Active: 25 mA Max.
– Standby: 150 mA Max.
Simple Write Operation:
– On−chip Address and Data Latches
– Self−timed Write Cycle with Auto−clear
Fast Write Cycle Time:
− 5 ms Max.
CMOS and TTL Compatible I/O
Automatic Page Write Operation:
− 1 to 128 Bytes in 5 ms
− Page Load Timer
End of Write Detection:
− Toggle Bit
− DATA Polling
Hardware and Software Write Protection
100,000 Program/Erase Cycles
100 Year Data Retention
Commercial, Industrial and Automotive Temperature Ranges
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 6
PLCC−32
N, G SUFFIX
CASE 776AK
Pin Name
• Fast Read Access Times: 120/150 ns
• Low Power CMOS Dissipation:
•
PDIP−28
P, L SUFFIX
CASE 646AE
PIN FUNCTION
Features
•
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1
I/O0−I/O7
Function
Address Inputs
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
VCC
5 V Supply
VSS
Ground
NC
No Connect
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
Publication Order Number:
CAT28C257/D
CAT28C257
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
4 3 2 1 32 31 30
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 1516 171819 20
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
PLCC Package (N, G)
A7
A12
A14
NC
VCC
WE
A13
DIP Package (P, L)
(Top Views)
A7−A14
VCC
CE
OE
WE
INADVERTENT
WRITE
PROTECTION
ADDR. BUFFER
& LATCHES
32,768 x 8
EEPROM
ARRAY
HIGH VOLTAGE
GENERATOR
128 BYTE PAGE
REGISTER
CONTROL
LOGIC
TIMER
A0−A6
ROW
DECODER
ADDR. BUFFER
& LATCHES
I/O BUFFERS
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
Figure 1. Block Diagram
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2
I/O0−I/O7
CAT28C257
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
–55 to +125
°C
Storage Temperature
–65 to +150
°C
–2.0 V to +VCC + 2.0 V
V
Voltage on Any Pin with Respect to Ground (Note 1)
VCC with Respect to Ground
−2.0 to +7.0
V
Package Power Dissipation Capability (TA = 25°C)
1.0
W
Lead Soldering Temperature (10 secs)
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS (Note 3)
Symbol
Parameter
Test Method
Min
Typ
Max
Units
Endurance
MIL−STD−883, Test Method 1033
104 or 105
Cycles/Byte
TDR
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP
ESD Susceptibility
MIL−STD−883, Test Method 3015
2,000
V
Latch−Up
JEDEC Standard 17
100
mA
NEND
ILTH (Note 4)
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to VCC + 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 5 V ±10%, unless otherwise specified.)
Limits
Symbol
ICC
Parameter
Test Conditions
Min
Typ
Max
Units
VCC Current (Operating, TTL)
CE = OE = VIL,
f = 6 MHz, All I/O’s Open
30
mA
VCC Current (Operating, CMOS)
CE = OE = VILC,
f = 6 MHz, All I/O’s Open
25
mA
VCC Current (Standby, TTL)
CE = VIH, All I/O’s Open
1
mA
VCC Current (Standby, CMOS)
CE = VIHC, All I/O’s Open
150
mA
ILI
Input Leakage Current
VIN = GND to VCC
−10
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC,
CE = VIH
−10
10
mA
VIH (Note 6)
High Level Input Voltage
2
VCC + 0.3
V
VIL (Note 5)
Low Level Input Voltage
−0.3
0.8
V
ICCC (Note 5)
ISB
ISBC (Note 6)
VOH
High Level Output Voltage
IOH = −400 mA
VOL
Low Level Output Voltage
IOL = 2.1 mA
VWI
Write Inhibit Voltage
2.4
3.5
5. VILC = −0.3 V to +0.3 V
6. VIHC = VCC −0.3 V to VCC + 0.3 V
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3
V
0.4
V
V
CAT28C257
Table 4. MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H
DIN
ACTIVE
L
H
DIN
ACTIVE
Byte Write (CE Controlled)
Standby and Write Inhibit
H
X
X
High−Z
STANDBY
Read and Write Inhibit
X
H
H
High−Z
ACTIVE
Table 5. CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = 5 V)
Symbol
Test
Min
Typ
Max
Conditions
Units
CI/O (Note 7)
Input/Output Capacitance
10
VI/O = 0 V
pF
CIN (Note 7)
Input Capacitance
6
VIN = 0 V
pF
7. This parameter is tested initially and after a design or process change that affects the parameter.
Table 6. A.C. CHARACTERISTICS, READ CYCLE (VCC = 5 V ±10%, unless otherwise specified.)
28C257−12
Min
Parameter
Symbol
Typ
28C257−15
Max
120
Min
Typ
Max
Units
tRC
Read Cycle Time
150
ns
tCE
CE Access Time
120
150
ns
tAA
Address Access Time
120
150
ns
tOE
OE Access Time
50
70
ns
tLZ (Note 8)
CE Low to Active Output
0
0
ns
tOLZ (Note 8)
OE Low to Active Output
0
0
ns
tHZ (Notes 8, 9)
CE High to High−Z Output
50
50
ns
tOHZ (Notes 8, 9)
OE High to High−Z Output
50
50
ns
tOH (Note 8)
Output Hold from Address Change
0
0
ns
8. This parameter is tested initially and after a design or process change that affects the parameter.
9. Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer.
Table 7. POWER−UP TIMING
Symbol
Parameter
tPUR
Power−Up to Read
tPUW
Power−Up to Write
Min
5
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4
Typ
Max
Units
100
ms
10
ms
CAT28C257
Table 8. A.C. CHARACTERISTICS, WRITE CYCLE (VCC = 5 V ±10%, unless otherwise specified.)
28C257−12
Symbol
Min
Parameter
Typ
28C257−15
Max
Min
Typ
5
Max
Units
5
ms
tWC
Write Cycle Time
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
50
50
ns
tCS
CE Setup Time
0
0
ns
tCH
CE Hold Time
0
0
ns
tCW (Note 10)
CE Pulse Time
100
100
ns
tOES
OE Setup Time
0
0
ns
tOEH
OE Hold Time
0
0
ns
tWP (Note 10)
WE Pulse Width
100
100
ns
tDS
Data Setup Time
50
50
ns
tDH
Data Hold Time
0
0
Write Inhibit Period After Power−up
5
10
5
10
ms
0.1
100
0.1
100
ms
tINIT (Note 11)
tBLC (Notes 11, 12)
Byte Load Cycle Time
ns
10. A write pulse of less than 20 ns duration will not initiate a write cycle.
11. This parameter is tested initially and after a design or process change that affects the parameter.
12. A timer of duration tBLC max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin; however
a transition from HIGH to LOW within tBLC max. stops the timer.
VCC − 0.3 V
2.0 V
INPUT PULSE LEVELS
REFERENCE POINTS
0.8 V
0.0 V
Figure 2. A.C. Testing Input/Output Waveform (Note 13)
13. Input rise and fall times (10% and 90%) < 10 ns.
1.3 V
1N914
3.3 K
DEVICE
UNDER
TEST
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
Figure 3. A.C. Testing Load Circuit (example)
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CAT28C257
DEVICE OPERATION
Byte Write
A write cycle is executed when both CE and WE are low,
and OE is high. Write cycles can be initiated using either WE
or CE, with the address input being latched on the falling
edge of WE or CE, whichever occurs last. Data, conversely,
is latched on the rising edge of WE or CE, whichever occurs
first. Once initiated, a byte write cycle automatically erases
the addressed byte and the new data is written within 5 ms.
Read
Data stored in the CAT28C257 is transferred to the data
bus when WE is held high, and both OE and CE are held low.
The data bus is set to a high impedance state when either CE
or OE goes high. This 2−line control architecture can be used
to eliminate bus contention in a system environment.
tRC
ADDRESS
tCE
CE
tOE
OE
WE
tOLZ
VIH
tLZ
tHZ
tOH
HIGH−Z
DATA OUT
tOHZ
tAA
DATA VALID
DATA VALID
Figure 4. Read Cycle
tWC
ADDRESS
tAS
tAH
tCH
tCS
CE
OE
tOES
tOEH
tWP
WE
tBLC
DATA OUT
DATA IN
HIGH−Z
DATA VALID
tDS
tDH
Figure 5. Byte Write Cycle [WE Controlled]
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CAT28C257
Page Write
can be loaded in any order) during the first and subsequent
write cycles. Each successive byte load cycle must begin
within tBLC MAX of the falling edge of the preceding WE
pulse. There is no page write window limitation as long as
WE is pulsed low within tBLC MAX.
Upon completion of the page write sequence, WE must
stay high a minimum of tBLC MAX for the internal automatic
program cycle to commence. This programming cycle
consists of an erase cycle, which erases any data that existed
in each addressed cell, and a write cycle, which writes new
data back into the cell. A page write will only write data to
the locations that were addressed and will not rewrite the
entire page.
The page write mode of the CAT28C257 (essentially an
extended BYTE WRITE mode) allows from 1 to 128 bytes
of data to be programmed within a single EEPROM write
cycle. This effectively reduces the byte−write time by a
factor of 128.
Following an initial WRITE operation (WE pulsed low,
for tWP, and then high) the page write mode can begin by
issuing sequential WE pulses, which load the address and
data bytes into a 128 byte temporary buffer. The page
address where data is to be written, specified by bits A7 to
A14, is latched on the last falling edge of WE. Each byte
within the page is defined by address bits A0 to A6 (which
tWC
ADDRESS
tAS
tAH
tBLC
tCW
CE
tOEH
OE
tCS
tOES
tCH
WE
HIGH−Z
DATA OUT
DATA IN
DATA VALID
tDH
tDS
Figure 6. Byte Write Cycle [CE Controlled]
OE
CE
tWP
tBLC
WE
ADDRESS
tWC
LAST BYTE
I/O
BYTE 0
BYTE 1
BYTE 2
BYTE n
Figure 7. Page Mode Write Cycle
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BYTE n+1
BYTE n+2
CAT28C257
DATA Polling
Toggle Bit
DATA polling is provided to indicate the completion of
write cycle. Once a byte write or page write cycle is initiated,
attempting to read the last byte written will output the
complement of that data on I/O7 (I/O0–I/O6 are
indeterminate) until the programming cycle is complete.
Upon completion of the self−timed write cycle, all I/O’s will
output true data during a read cycle.
In addition to the DATA Polling feature of the
CAT28C257, the device offers an additional method for
determining the completion of a write cycle. While a write
cycle is in progress, reading data from the device will result
in I/O6 toggling between one and zero. However, once the
write is complete, I/O6 stops toggling and valid data can be
read from the device.
ADDRESS
CE
WE
tOEH
tOES
tOE
OE
Figure 8. DATA Polling
WE
CE
tOEH
tOES
tOE
OE
I/O6
(Note 14)
(Note 14)
Figure 9. Toggle Bit
14. Beginning and ending state of I/O6 is indeterminate.
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CAT28C257
Hardware Data Protection
4. Noise pulses of less than 20 ns on the WE or CE
inputs will not result in a write cycle.
The following is a list of hardware data protection features
that are incorporated into the CAT28C257.
1. VCC sense provides for write protection when VCC
falls below 3.5 V min.
2. A power on delay mechanism, tINIT (see AC
characteristics), provides a 5 to 10 ms delay before
a write sequence, after VCC has reached 3.5 V
min.
3. Write inhibit is activated by holding any one of
OE low, CE high or WE high.
WRITE DATA:
ADDRESS:
WRITE DATA:
ADDRESS:
WRITE DATA:
ADDRESS:
Software Data Protection
The CAT28C257 features a software controlled data
protection scheme which, once enabled, requires a data
algorithm to be issued to the device before a write can be
performed. The device is shipped from ON Semiconductor
with the software protection NOT ENABLED (the
CAT28C257 is in the standard operating mode).
WRITE DATA:
AA
ADDRESS:
5555
WRITE DATA:
55
ADDRESS:
2AAA
WRITE DATA:
A0
ADDRESS:
5555
WRITE DATA:
SOFTWARE DATA
PROTECTION ACTIVATED (Note 15)
WRITE DATA:
ADDRESS:
WRITE DATA:
XX
TO ANY ADDRESS
ADDRESS:
WRITE LAST BYTE
TO
LAST ADDRESS
WRITE DATA:
ADDRESS:
Figure 10. Write Sequence for Activating
Software Data Protection
AA
5555
55
2AAA
80
5555
AA
5555
55
2AAA
20
5555
Figure 11. Write Sequence for Deactivating
Software Data Protection
15. Write protection is activated at this point whether or not any more writes are completed. Writing to addresses must occur within tBLC Max.,
after SDP activation.
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CAT28C257
To activate the software data protection, the device must
be sent three write commands to specific addresses with
specific data (Figure 10). This sequence of commands
(along with subsequent writes) must adhere to the page write
timing specifications (Figure 12). Once this is done, all
subsequent byte or page writes to the device must be
preceded by this same set of write commands. The data
protection mechanism is activated until a deactivate
sequence is issued regardless of power on/off transitions.
This gives the user added inadvertent write protection on
power−up in addition to the hardware protection provided.
DATA
ADDRESS
AA
5555
To allow the user the ability to program the device with an
EEPROM programmer (or for testing purposes) there is a
software command sequence for deactivating the data
protection. The six step algorithm (Figure 11) will reset the
internal protection circuitry, and the device will return to
standard operating mode (Figure 13 provides reset timing).
After the sixth byte of this reset sequence has been issued,
standard byte or page writing can commence.
55
2AAA
tWC
A0
5555
BYTE OR
PAGE
CE
tWP
tBLC
WRITES
ENABLED
WE
Figure 12. Software Data Protection Timing
DATA
ADDRESS
AA
5555
55
2AAA
80
5555
AA
5555
55
2AAA
20
5555
tWC
SDP
RESET
CE
DEVICE
UNPROTECTED
WE
Figure 13. Resetting Software Data Protection Timing
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CAT28C257
PACKAGE DIMENSIONS
PLCC 32
CASE 776AK−01
ISSUE O
PIN#1 IDENTIFICATION
E1
E
E2
D1
A2
D
A3
TOP VIEW
END VIEW
b1
b
e
D2
SIDE VIEW
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC MS-016.
SYMBOL
MIN
A2
0.38
A3
2.54
2.80
11
MAX
b
0.33
0.54
b1
0.66
0.82
D
12.32
12.57
D1
11.36
11.50
D2
9.56
11.32
E
14.86
15.11
E1
13.90
14.04
E2
12.10
13.86
e
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NOM
1.27 BSC
CAT28C257
PACKAGE DIMENSIONS
PDIP−28, 600 mils
CASE 646AE−01
ISSUE A
SYMBOL
MIN
NOM
A
E1 E
D
6.35
A1
0.39
A2
3.18
4.95
b
0.36
0.55
b1
0.77
1.77
c
0.21
0.38
D
35.10
39.70
E
15.24
15.87
E1
12.32
e
TOP VIEW
A2
A1
b1
e
14.73
2.54 BSC
eB
15.24
17.78
L
2.93
5.08
A
L
b
c
eB
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC MS-011.
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MAX
CAT28C257
Example of Ordering Information (Note 16)
Prefix
Device #
Suffix
CAT
28C257
N
Company ID
(Optional)
Product Number
28C257
P:
N:
L:
G:
I
− 12
Tape & Reel (Note 19)
T: Tape & Reel
Temperature Range
Blank = Commercial (0°C to +70°C)
I = Industrial (−40°C to +85°C)
A = Automotive (−40°C to +105°C) (Note 18)
Package
PDIP (Note 17)
PLCC (Note 17)
PDIP (Lead Free, Halogen Free)
PLCC (Lead Free, Halogen Free)
T
Speed
12: 120 ns
15: 150 ns
16. The device used in the above example is a CAT28C257NI−12T (100,000 Cycle Endurance, PLCC, Industrial Temperature, 120 ns Access
Time, Tape & Reel).
17. Solder−plate (tin−lead) packages, contact Factory for availability.
18. −40°C to +125°C is available upon request.
19. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
CAT28C257/D