SWITCHMODE Power Rectifier

MURD330T4G,
SURD8330T4G
SWITCHMODE
Power Rectifier
DPAK Surface Mount Package
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These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
•
•
•
•
•
•
ULTRAFAST RECTIFIER
3 A, 300 V
Low Forward Voltage Drop
Low Leakage
Ultra−Fast Recovery Time
AEC−Q101 Qualified and PPAP Capable
SURD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Package*
DPAK
CASE 369C
1
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
MARKING DIAGRAM
Leads are Readily Solderable
1
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Rated Reverse Voltage
VR
300
V
Average Rectified Forward Current
(Rated VR, TC = 170°C)
IF
Non−Repetitive Peak Surge Current
IFSM
75
A
TJ, Tstg
−55 to +175
°C
Operating Junction and Storage
Temperature Range
A
3.0
U330
A
Y
WW
G
AYWW
U330G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MURD330T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
SURD8330T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4
3
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 5
1
Publication Order Number:
MURD330/D
MURD330T4G, SURD8330T4G
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient (Note 1)
1. Rating applies when surface mounted on a 700
mm2,
Symbol
Value
Unit
RqJC
2
°C/W
RqJA
49
°C/W
Symbol
Value
Unit
1 oz Cu heat spreader.
ELECTRICAL CHARACTERISTICS
Characteristics
Maximum Instantaneous Forward Voltage Drop
(IF = 3 A, TJ = 25°C)
(iF = 3 A, TJ = 150°C)
VF
Maximum Instantaneous Reverse Current
(TJ = 25°C, 300 V)
(TJ = 150°C, 300 V)
IR
Maximum Reverse Recovery Time
(IF = 1 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25°C)
trr
V
1.15
0.92
mA
5
500
ns
50
ESD Ratings:
Machine Model = C
Human Body Model = 3B
V
> 400
> 8000
Typical Peak Reverse Recovery Current
(IF = 1.0 A, di/dt = 50 A/ms)
IRM
1.5
A
100.0
10.0
1.0
175°C
0.1
0.4 0.5
0.6
150°C
0.7
0.8
0.9
25°C
1.0
1.1
1.2
1.3
VF, INSTANTANEOUS VOLTAGE (V)
1.4
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
100.0
10.0
175°C
1.0
0.1
0.4 0.5
Figure 1. Typical Forward Voltage
0.6
0.7
150°C
0.8
0.9
1.0
25°C
1.1
1.2
1.3
VF, INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
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2
1.4
MURD330T4G, SURD8330T4G
1.0E−02
1.0E−02
1.0E−03
1.0E−03
1.0E−04
IR, REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
TYPICAL CHARACTERISTICS
175°C
1.0E−05
150°C
1.0E−06
1.0E−07
25°C
1.0E−08
1.0E−09
1.0E−10
0.0
50
100
150
200
250
300
175°C
150°C
1.0E−04
1.0E−05
1.0E−06
25°C
1.0E−07
1.0E−08
1.0E−09
1.0E−10
0.0
50
100
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
100
10
0
20
40
60
80
100
120 140 160 180 200
3.0
SQUARE
WAVE
2.5
1.5
1.0
0.5
0
0
0.5
IF, AVERAGE FORWARD CURRENT (A)
IF, AVERAGE FORWARD CURRENT (A)
5.0
DC
2.0
1.0
0
100
110
120
130
140
150
160
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 6. Power Dissipation
RqJC = 2°C/W
3.0
DC
2.0
Io, AVERAGE FORWARD CURRENT
6.0
SQUARE
WAVE
300
3.5
Figure 5. Typical Capacitance
TJ = 175°C/W
250
4.0
VR, REVERSE VOLTAGE (VOLTS)
4.0
200
Figure 4. Maximum Reverse Voltage
Po, AVERAGE POWER DISSIPATION (W)
Figure 3. Typical Reverse Voltage
1.0
150
VR, REVERSE VOLTAGE (V)
170
180
6.0
RqJC = 2°C/W
5.0
TJ = 175°C/W
4.0
DC
3.0
SQUARE
WAVE
2.0
1.0
0
0
TC, CASE TEMPERATURE (°C)
20
40
60
80
100
120
140
160
180 200
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating, Case
Figure 8. Current Derating, Ambient
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3
MURD330T4G, SURD8330T4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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4
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For additional information, please contact your local
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MURD330/D