Z0103MA Sensitive Gate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO−92 package which is readily adaptable for use in automatic insertion equipment. http://onsemi.com TRIACS 1.0 AMPERE RMS 600 VOLTS Features • One−Piece, Injection−Molded Package • Blocking Voltage to 600 V • Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all • • • • • MT2 possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C) Commutating di/dt of 1.6 A/msec at 110°C High Surge Current of 8 A These are Pb−Free Devices G 12 Symbol Value Unit Peak Repetitive Off-State Voltage (TJ = −40 to +125°C)(1) Sine Wave 50 to 60 Hz, Gate Open VDRM, VRRM 600 V On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50°C) IT(RMS) 1.0 A ITSM 8.0 A I2t 0.35 A2s Average Gate Power (TC = 80°C, t v 8.3 ms) PG(AV) 1.0 W Peak Gate Current (t v 20 ms, TJ = +125°C) IGM 1.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Peak Non−Repetitive Surge Current One Full Cycle, Sine Wave 60 Hz (TC = 110°C) Circuit Fusing Considerations (t = 8.3 ms) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 1 3 STRAIGHT LEAD BULK PACK MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating MT1 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 (TO−226AA) CASE 029 STYLE 12 MARKING DIAGRAM Z0 10xMA YWW G G 1 2 3 x = 3,7,9 Y = Year WW = Work Week G = Pb−Free Package (*Note: Microdot may be in either location) PIN ASSIGNMENT 1 Main Terminal 1 2 Gate 3 Main Terminal 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2012 January, 2012− Rev. 4 1 Publication Order Number: Z0103MA/D Z0103MA THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 50 °C/W Thermal Resistance, Junction−to−Ambient RqJA 160 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM − − − − 5.0 500 mA Peak On−State Voltage (ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%) VTM − − 1.56 V Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C ON CHARACTERISTICS Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(−) All Types MT2(−), G(−) All Types MT2(−), G(+) All Types IL Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 W) MT2(+), G(+) All Types MT2(+), G(−) All Types MT2(−), G(−) All Types MT2(−), G(+) All Types VGT Gate Non−Trigger Voltage (VD = 12 V, RL = 30 W, TJ = 125°C) All Four Quadrants Holding Current (VD = 12 Vdc, Initiating Current = 50 mA, Gate Open) mA 0.15 0.15 0.15 0.25 − − − − 3.0 3.0 3.0 5.0 − − − − − − − − 7.0 15 7.0 7.0 mA V − − − − − − − − 1.3 1.3 1.3 1.3 VGD 0.2 − 1.3 V IH − − 7.0 mA di/dt(c) 1.6 − − A/ms 10 30 − − − 20 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open, TJ = 110°C, f = 250 Hz, with Snubber) Critical Rate of Rise of Off−State Voltage (VD = 67% Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) dv/dt Repetitive Critical Rate of Rise of On−State Current, TJ = 125°C Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz di/dt http://onsemi.com 2 V/ms A/ms Z0103MA Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage VTM IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM Z0103MA 110 100 100 I T(RMS) , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) T = 30° 60° 90 DC 90° 80 180° 70 120° 60 a 50 a 40 30 a = CONDUCTION ANGLE 0.1 0.2 0.3 60° 90 0.4 0.5 0.6 0.7 0.8 90° DC 80 180° 70 120° 60 a 50 40 20 0 T = 30° a 30 a = CONDUCTION ANGLE 0 0.05 0.1 0.15 0.2 0.25 0.3 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. RMS Current Derating 1.2 0.35 0.4 5.2 6.0 6.0 4.0 a 1.0 DC a 0.8 TJ = 110°C 180° 2.0 a = CONDUCTION ANGLE 25°C 120° 0.6 1.0 0.4 ITM, INSTANTANEOUS ON‐STATE CURRENT (AMP) P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 110 90° 60° 0.2 T = 30° 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 3. Power Dissipation 0.6 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.006 0.4 1.2 2.0 2.8 3.6 4.4 VTM, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) Figure 4. On−State Characteristics http://onsemi.com 4 Z0103MA 10 I TSM , PEAK SURGE CURRENT (AMPS) R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1. 0 ZQJC(t) = RQJC(t) @ r(t) 0.1 0.01 0.1 1.0 10 1•103 100 5.0 3.0 TJ = 110°C f = 60 Hz 2.0 Surge is preceded and followed by rated current. 1.0 1.0 1•104 2.0 3.0 5.0 t, TIME (ms) 10 30 50 100 NUMBER OF CYCLES Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current 100 1.2 VGT, GATE TRIGGER VOLTAGE (V) I GT , GATE TRIGGER CURRENT (mA) CYCLE Q4 10 Q3 Q2 Q1 1 1.1 Q4 1.0 Q3 0.9 Q2 0.8 Q1 0.7 0.6 0.5 0.4 0 -40 -25 -10 5 20 35 50 65 80 95 0.3 -40 -25 110 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Current versus Junction Temperature Figure 8. Typical Gate Trigger Voltage versus Junction Temperature 100 110 10 10 IH , HOLDING CURRENT (mA) IL , LATCHING CURRENT (mA) -10 TJ, JUNCTION TEMPERATURE (°C) Q2 Q3 Q4 1 Q1 0 -40 -25 -10 5 20 35 50 65 80 95 MT2 Negative 1 MT2 Positive 0.1 -40 -25 110 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Latching Current versus Junction Temperature Figure 10. Typical Holding Current versus Junction Temperature http://onsemi.com 5 110 Z0103MA LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC 1N4007 MEASURE I CHARGE CONTROL TRIGGER CONTROL CHARGE TRIGGER NON‐POLAR CL RS CS MT2 1N914 51 W ADJUST FOR + di/dt(c) 200 V MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c ORDERING & SHIPPING INFORMATION: Packaging Options, Device Suffix U.S. Europe Equivalent Z0103MARL1G Shipping† Description of TO−92 Tape Orientation Radial Tape and Reel (2K/Reel) Flat side of TO−92 and adhesive tape visible Z0103MAG Bulk in Box (5K/Box) N/A, Bulk Z0103MARLRPG Radial Tape and Fan Fold Box (2K/Box) Round side of TO−92 and adhesive tape visible Z0103MARLRFG Radial Tape and Fan Fold Box (2K/Box) Round side of TO−92 and adhesive tape on reverse side †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 6 Z0103MA PACKAGE DIMENSIONS TO−92 (TO−226AA) CASE 029−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. 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