NUP3105L, SZNUP3105L Dual Line CAN Bus Protector The SZ/NUP3105L has been designed to protect the CAN transceiver in 24 V systems from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. Features • • • • • • • 350 W Peak Power Dissipation per Line (8/20 msec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed CAN Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms) Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER SOT−23 CASE 318 STYLE 27 PIN 1 PIN 3 PIN 2 Applications CAN_H • Industrial Control Networks CAN Transceiver Smart Distribution Systems (SDS®) ♦ DeviceNet™ Automotive Networks ♦ Low and High−Speed CAN ♦ Fault Tolerant CAN ♦ Trucks ♦ • CAN Bus CAN_L NUP3105L MARKING DIAGRAM 27F MG G 1 27F M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 2 1 Publication Order Number: NUP3105L/D NUP3105L, SZNUP3105L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Value Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) Unit W 350 TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 8.0 400 30 kV V kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Min Typ Max Unit − − 32 V 35.6 − − V Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) IR Reverse Leakage Current VRWM = 32 V − − 100 nA VC Clamping Voltage IPP = 5 A (8/20 ms Waveform) (Note 4) − − 59 V VC Clamping Voltage IPP = 8 A (8/20 ms Waveform) (Note 4) − − 66 V IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) − − 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) − − 30 pF VBR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 12.0 IPP, PEAK PULSE CURRENT (A) % OF PEAK PULSE CURRENT 110 WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 100 90 80 c−t 70 60 td = IPP/2 50 40 30 20 PULSE WAVEFORM 8 x 20 ms per Figure 1 10.0 8.0 6.0 4.0 10 0 2.0 0 5 10 15 20 25 30 45 50 55 60 65 70 VC, CLAMPING VOLTAGE (V) t, TIME (ms) Figure 1. Pulse Waveform, 8/20 ms Figure 2. Clamping Voltage vs Peak Pulse Current www.onsemi.com 2 NUP3105L, SZNUP3105L TVS Diode Protection Circuit voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. TVS diodes provide protection to a transceiver by clamping a surge voltage to a safe level. TVS diodes have high impedance below and low impedance above their breakdown voltage. A TVS Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 3 provides an example of a dual bidirectional TVS diode array that can be used for protection with the high−speed CAN network. The bidirectional array is created from four identical Zener TVS diodes. The clamping voltage of the composite device is equal to the breakdown CAN_H CAN Transceiver CAN_L CAN Bus NUP3105L Figure 3. High−Speed and Fault Tolerant CAN TVS Protection Circuit ORDERING INFORMATION Package Shipping† NUP3105LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZNUP3105LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel NUP3105LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZNUP3105LT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 3 NUP3105L, SZNUP3105L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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