NCV894530 1.2 A - 2.1 MHz High Efficiency Low Voltage Step-Down Converter The NCV894530 step−down dc−dc converter is a monolithic integrated circuit dedicated to automotive driver information systems from a downstream voltage rail. The output voltage is externally adjustable from 0.9 V to 3.3 V and can source up to 1.2 A. The converter is running at a 2.1 MHz switching frequency, above the sensitive AM band. The NCV894530 provides additional features expected in automotive power systems such as integrated soft−start, hiccup mode current limit and thermal shutdown protection. The device can also be synchronized to an external clock signal in the range of 2.1 MHz. The NCV894530 is available in the same 3x3 mm 10−pin DFN package as the dual NCV896530, with compatible pin−out. Features • • • • • • • • • • Synchronous Rectification for Higher Efficiency 2.1 MHz Switching Frequency Sources up to 1.2 A Adjustable Output Voltage from 0.9 V to 3.3 V 2.7 V to 5.5 V Input Voltage Range Thermal Limit and Short Circuit Protection Auto Synchronizes with an External Clock Wettable Flanks − DFN NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com MARKING DIAGRAM . . DFN10 CASE 485C NCV89 4530 = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS FB 1 10 GND EN 2 9 NC SYNC 3 8 POR VIN 4 7 GND SW 5 6 NC (Top View) Typical Applications • • • • NCV89 4530 ALYW Audio Infotainment Safety − Vision System Instrumentation ORDERING INFORMATION Device NCV894530MWTXG Package Shipping† DFN10 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 2 1 Publication Order Number: NCV894530/D NCV894530 L 2.2 mH Vin Vin Vout SW Cin 20 mF VDD Cout 10 mF NCV894530 SYNC C1 Microprocessor R1 Vin or Vout FB R2 1.8 − 2.7 MHz RPOR OFF ON RESET POR EN GND Figure 1. NCV894530 Typical Application BLOCK DIAGRAM Vin UVLO CURRENT LIMIT ENABLE SOFTSTART THERMAL SHUTDOWN REFERENCE EN LOGIC and PWM LATCH POR SW EA FB SLOPE COMPENSATON SYNC OSCILLATOR GND Figure 2. Simplified Block Diagram PIN FUNCTION DESCRIPTION Pin Pin Name Type Description 1 FB Analog Input Feedback voltage. This is the input to the error amplifier. 2 EN Digital Input Enable. This pin is active HIGH (equal or lower Analog Input voltage) and is turned off by logic LOW. Do not let this pin float. 3 SYNC Digital Input Oscillator Synchronization. This pin can be synchronized to an external clock in the range of 2.1 MHz. If not used, the pin must be connected to ground. 4 VIN Analog / Power Input 5 SW Power Output Power supply input for the PFET power stage, analog and digital blocks. The pin must be decoupled to ground by a 10 mF ceramic capacitor. Connection from power MOSFETs of output to the Inductor. www.onsemi.com 2 NCV894530 PIN FUNCTION DESCRIPTION Pin Pin Name Type Description 6 NC − 7 GND Analog / Power Ground This pin is the GROUND reference for the analog section of the IC. The pin must be connected to the system ground. Both pins must be connected together on PCB. 8 POR Digital Output Power On Reset. This is an open drain output. This output is shutting down when the output voltage is less than 90% (typ) of their nominal values. An external pull−up resistor should be connected between POR and VIN or VOUT depending on the supplied device. 9 NC − 10 GND Analog Ground EPAD EPAD Exposed Pad Connect this pin to ground. Connected to GND potential. ABSOLUTE MAXIMUM RATINGS (Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.) Symbol Min Max Unit Vin −0.3 6.0 V SW Voltage VSW −0.3 6 V (or Vin + 0.3 V)* V Enable Input Voltage VEN −0.3 6 V (or Vin + 0.3 V)* V Rating Input Voltage Feedback Input Voltage VFB −0.3 6 V (or Vin + 0.3 V)* V Oscillator Synchronization Input Voltage VSYNC −0.3 6 V (or Vin + 0.3 V)* V Power On Reset Voltage VPOR −0.3 6 V (or Vin + 0.3 V)* V Junction Temperature TJ −40 150 °C Storage Temperature TSTG −55 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Whichever is lower. ESD CAPABILITY (Note 1) Rating Symbol Min Max Unit ESD Capability, Human Body Model ESDHBM −2 2 kV ESD Capability, Machine Model ESDMM −200 200 V Min Max Unit 1. This device series incorporates ESD portection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) LEAD SOLDERING TEMPERATURE AND MSL (Note 2) Symbol Rating Moisture Sensitivity Level MSL Lead Temperature Soldering Reflow (SMD Styles Only), Pb−Free Versions TSLD 3 per IPC 265 peak °C 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. THERMAL CHARACTERISTICS Rating Thermal Characteristics, DFN10 (Note 3) Thermal Resistance, Junction−to−Air Symbol Value Unit RqJA 40 °C/W 3. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. www.onsemi.com 3 NCV894530 ELECTRICAL CHARACTERISTICS (2.7 V < VIN < 5.5 V, Min and Max values are valid for the temperature range −40°C ≤ TJ ≤ +150°C unless noted otherwise, and are guaranteed by test, design or statistical correlation. Typical values are referenced to TA = +25°C) Conditions Symbol Min Typ Max Unit Quiescent Current SYNC = GND, VFB = 0 V, EN = 2 V, (No Switching) Iq − 1.0 2.0 mA Shutdown Current EN = 0 V IOFF − − 10 mA Under Voltage Lockout VIN falling Rating INPUT VOLTAGE VUVLO 2.2 2.4 2.6 V VUVLOH − 100 150 mV VILSYNC VIHSYNC − 1.2 − − 0.4 − ISYNC 2.0 − 50 mA External Synchronization fSYNC 1.8 − 2.7 MHz SYNC Pulse Duty Ratio DSYNC − 50 − % VILEN VIHEN − 1.2 − − 0.4 − VEN = 5 V IEN 2 − 50 mA VOUT falling VPORT 87 90 93 %Vout Under Voltage Hysteresis SYNC SYNC Threshold Voltage Logic Low Logic High SYNC Input Current V VSYNC = 5 V ENABLE Enable Threshold Voltage Logic Low Logic High Enable Input Current V POWER ON RESET Power On Reset Threshold Power On Reset Hysteresis POR Sink Current VPORH − − 3.0 %Vout VPOR = 0.4 V IPOR 2.0 − − mA TJ = −40°C to 125°C VFB 0.591 (−1.5%) 0.6 0.609 (+1.5%) V Time from EN to 90% of VFB tSS 1700 − 3200 ms FSW 1.8 2.1 2.4 MHz D − − 100 % TONmin − − 80 ns FEEDBACK VOLTAGE Feedback Voltage (Accuracy %) Soft−Start Time SWITCHING FREQUENCY Switching Frequency Duty Cycle Minimum On Time POWER SWITCHES High−Side MOSFET On−Resistance IRDS(on) = 0.6 A, VIN = 5 V, TJ = 25°C RDS(on)H − 500 820 mW Low−Side MOSFET On−Resistance IRDS(on) = 0.6 A, VIN = 5 V, TJ = 25°C RDS(on)L − 450 820 mW High−Side MOSFET Leakage Current VIN = 5 V, VSW = 0 V, VEN = 0 V IDS(off)H − − 5.0 mA Low−Side MOSFET Leakage Current VSW = 5 V, VEN = 0 V IDS(off)L − − 5.0 mA Peak Inductor Current (100% duty cycle) IPK 1.9 − 2.5 A Thermal Shutdown Temperature Guaranteed by Design TSD 150 170 190 °C Thermal Shutdown Hysteresis Guaranteed by Design TSH 5.0 − 20 °C CURRENT LIMIT PROTECTION Current Limit THERMAL SHUTDOWN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NCV894530 ISYNC, SYNC PULLDOWN CURRENT (mA) TYPICAL CHARACTERISTICS CURVES TJ = 25°C EN1 = 1 2.25 2.20 2.15 2.10 2.05 2.00 IEN, ENABLE PULLDOWN CURRENT (mA) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 TJ = 25°C 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VIN, INPUT VOLTAGE (V) VSYNC, SYNC VOLTAGE (V) Figure 4. Sync Pulldown Current vs. Sync Voltage 12 1.2 TJ = 25°C 10 8 6 4 2 TJ = 25°C 1.0 0.8 0.6 0.4 0.2 0 0 0 1 3 2 4 2.5 5 3.0 3.5 4.0 4.5 5.0 VEN, ENABLE VOLTAGE (V) VIN, INPUT VOLTAGE (V) Figure 5. Enable Pulldown Current vs. Enable Voltage Figure 6. Standby Current vs. Input Voltage 2.20 2.15 2.10 2.05 2.00 −40 5.5 600.0 VREF, REFERENCE VOLTAGE (mV) IPK, CURRENT LIMIT (A) 12 Figure 3. Switching Frequency vs. Input Voltage ISTBMAX, STANDBY CURRENT (mA) FSW, SWITCHING FREQUENCY (MHz) 2.30 10 60 599.2 598.8 598.4 598.0 −40 160 110 599.6 10 60 110 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Current Limit vs. Temperature Figure 8. Reference Voltage vs. Temperature www.onsemi.com 5 NCV894530 ISYNC, SYNC PULLDOWN CURRENT (mA) 12.0 VEN = 5 V 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8.0 −40 10 60 110 160 14 VSYNC = 5 V 12 10 8 6 4 2 0 −40 10 60 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Enable Pulldown Current vs. Temperature Figure 10. Sync Pulldown Current vs. Temperature FSW, SWITCHING FREQUENCY (MHz) IEN, ENABLE PULLDOWN CURRENT (mA) TYPICAL CHARACTERISTICS CURVES 2.25 2.20 2.15 2.10 VIN = 5 V EN1 = 1 2.05 −40 10 60 110 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Switching Frequency vs. Temperature www.onsemi.com 6 160 160 NCV894530 APPLICATION INFORMATION PWM Operating Mode re−enables and operates normally; however, if the excessive load is still present the cycle begins again. Internal heat dissipation is kept to a minimum as current will only flow during the reset time of the protection circuitry. The hiccup mode is continuous until the excessive load is removed. The hiccup current limit in switching mode is 300 mA lower than it in low dropout mode (100% duty cycle). The output voltage of the device is regulated by modulating the on−time pulse width of the main switch PMOS at a fixed 2.1 MHz frequency (Figure 2). The switching of the PMOS is controlled by a flip−flop driven by the internal oscillator and a comparator that compares the error signal from an error amplifier with the sum of the sensed current signal and compensation ramp. The driver switches ON and OFF the upper side transistor and switches the lower side transistor in either ON state or in current source mode. At the beginning of each cycle, the main switch is turned ON by the rising edge of the internal oscillator clock. The inductor current ramps up until the sum of the current sense signal and compensation ramp becomes higher than the error amplifier’s voltage. Once this has occurred, the PWM comparator resets the flip−flop, PMOS is turned OFF while the synchronous switch NMOS is turned in its current source mode. NMOS replaces the external Schottky diode to reduce the conduction loss and improve the efficiency. To avoid overall power loss, a certain amount of dead time is introduced to ensure PMOS is completely turned OFF before NMOS is being turned ON. Low Dropout Operation The NCV894530 offers a low input−to−output voltage difference. The NCV894530 can operate at 100% duty cycle. In this mode the PMOS remains completely ON. The minimum input voltage to maintain regulation can be calculated as: ǒ V IN(min) + V OUT(max) ) I OUT ǒR DS(on) ) R INDUCTORǓ Ǔ (eq. 1) VOUT: Output Voltage IOUT: Max Output Current RDS(on): P=Channel Switch RDS(on) RINDUCTOR: Inductor Resistance (DCR) Power On Reset The Power On Reset (POR) is pulled low when the converter is out of 90% of the regulation. When output is in the range of regulation, a pull up resistor is needed to this open drain output. This resistor may be connected to VIN or VOUT if the device supplied cannot accept VIN on the IO pins. POR is low when NCV894530 is off. Leave the POR pin unconnected when not used. Soft−Start The NCV894530 uses soft start to limit the inrush current when the device is initially powered up or enabled. Soft−start is implemented by gradually increasing the reference voltage until it reaches the full reference voltage. During startup, a pulsed current source charges the internal soft−start capacitor to provide gradually increasing reference voltage. When the voltage across the capacitor ramps up to the nominal reference voltage, the pulsed current source will be switched off and the reference voltage will switch to the regular reference voltage. Frequency Synchronization The NCV894530 can be synchronized with an external clock signal by the SYNC pin (1.8 MHz − 2.7 MHz). Thermal Shutdown Over Current Hiccup Protection Internal Thermal Shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. If the junction temperature exceeds TSD, the device shuts down. In this mode all power transistors and control circuits are turned off. The device restarts in soft−start after the temperature drops below 130°C min. This feature is provided to prevent catastrophic failures from accidental device overheating. When the current through the inductor exceeds the current limit the NCV894530 enters over current hiccup mode. When an over current event is detected the NCV894530 disables the outputs and attempts to re−enable the outputs after the hiccup time. The part remains off for the hiccup time and then goes through the power on reset procedure. If the excessive load has been removed then the output stage www.onsemi.com 7 NCV894530 PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE C D PIN 1 REFERENCE 0.15 C 2X EDGE OF PACKAGE A B L1 ÇÇÇ ÇÇÇ ÇÇÇ E DETAIL A Bottom View (Optional) EXPOSED Cu TOP VIEW MOLD CMPD 0.15 C 2X (A3) DETAIL B 0.10 C A1 A 10X SIDE VIEW A1 D2 1 A3 DIM A A1 A3 b D D2 E E2 e K L L1 DETAIL B Side View (Optional) C DETAIL A e L ÉÉÉ ÉÉÉ SEATING PLANE 0.08 C 10X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. 6. DETAILS A AND B SHOW OPTIONAL VIEWS FOR END OF TERMINAL LEAD AT EDGE OF PACKAGE. 7. FOR DEVICE OPN CONTAINING W OPTION, DETAIL B ALTERNATE CONSTRUCTION IS NOT APPLICABLE. SOLDERING FOOTPRINT* 5 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.40 2.60 3.00 BSC 1.70 1.90 0.50 BSC 0.19 TYP 0.35 0.45 0.00 0.03 2.6016 E2 10X K 10 10X 0.10 C A B 0.05 C 1.8508 2.1746 6 3.3048 b BOTTOM VIEW NOTE 3 10X 0.5651 10X 0.5000 PITCH 0.3008 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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