AT45D021A - Mature

Features
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100% Compatible to AT45D021
Single 4.5V - 5.5V Supply
Serial Interface Architecture
Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Pages (264 Bytes/Page) Main Memory
Optional Page and Block Erase Operations
Two 264-byte SRAM Data Buffers – Allows Receiving of Data
while Reprogramming of Nonvolatile Memory
Continuous Read Capability through Entire Array
Internal Program and Control Timer
Low Power Dissipation
– 15 mA Active Read Current Typical
– 10 µA CMOS Standby Current Typical
15 MHz Max Clock Frequency
Hardware Data Protection Feature
Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
2-megabit
5-volt Only
Serial
DataFlash®
AT45D021A
Description
The AT45D021A is a 5-volt only, serial interface Flash memory suitable for in-system
reprogramming. Its 2,162,688 bits of memory are organized as 1024 pages of
264 bytes each. In addition to the main memory, the AT45D021A also contains two
SRAM data buffers of 264 bytes each. The buffers allow receiving of data while a
page in the main memory is being reprogrammed. Unlike conventional Flash
(continued)
Recommend using
AT45DB021B for new
designs.
Pin Configurations
TSOP Top View
Type 1
Pin Name
Function
CS
Chip Select
SCK
Serial Clock
SI
Serial Input
SO
Serial Output
WP
Hardware Page Write
Protect Pin
RESET
Chip Reset
RDY/BUSY
Ready/Busy
RDY/BUSY
RESET
WP
NC
NC
VCC
GND
NC
NC
NC
CS
SCK
SI
SO
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
SOIC
29
28
27
26
25
24
23
22
21
14
15
16
17
18
19
20
5
6
7
8
9
10
11
12
13
WP
RESET
RDY/BUSY
NC
NC
NC
NC
NC
NC
NC
NC
DC
DC
NC
NC
NC
SCK
SI
SO
NC
NC
NC
NC
NC
NC
4
3
2
1
32
31
30
CS
NC
NC
GND
VCC
NC
NC
PLCC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND
NC
NC
CS
SCK
SI
SO
NC
NC
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
NC
NC
WP
RESET
RDY/BUSY
NC
NC
NC
NC
NC
NC
NC
NC
Rev. 1639C–01/01
Note: PLCC package pins 16
and 17 are DON’T CONNECT.
1
memories that are accessed randomly with multiple
address lines and a parallel interface, the DataFlash uses a
serial interface to sequentially access its data. The simple
serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces
package size and active pin count. The device is optimized
for use in many commercial and industrial applications
where high density, low pin count, low voltage, and low
power are essential. Typical applications for the DataFlash
are digital voice storage, image storage, and data storage.
The device operates at clock frequencies up to 15 MHz
with a typical active read current consumption of 15 mA.
To allow for simple in-system reprogrammability, the
AT45D021A does not require high input voltages for programming. The device operates from a single power
supply, 4.5V to 5.5V, for both the program and read operations. The AT45D021A is enabled through the chip select
pin (CS) and accessed via a three-wire interface consisting
of the Serial Input (SI), Serial Output (SO), and the Serial
Clock (SCK).
All programming cycles are self-timed, and no separate
erase cycle is required before programming.
Block Diagram
FLASH MEMORY ARRAY
WP
PAGE (264 BYTES)
BUFFER 1 (264 BYTES)
SCK
CS
RESET
VCC
GND
RDY/BUSY
BUFFER 2 (264 BYTES)
I/O INTERFACE
SI
SO
Memory Array
To provide optimal flexibility, the memory array of the
AT45D021A is divided into three levels of granularity comprised of sectors, blocks and pages. The Memory Architecture Diagram illustrates the breakdown of each level and
2
AT45D021A
details the number of pages per sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page level.
AT45D021A
Memory Architecture Diagram
BLOCK ARCHITECTURE
SECTOR 0
SECTOR 0 = 8 Pages
2112 bytes (2K + 64)
BLOCK 1
SECTOR 1
SECTOR 1 = 248 Pages
65,472 bytes (62K + 1984)
BLOCK 0
BLOCK 2
PAGE ARCHITECTURE
8 Pages
PAGE 0
BLOCK 0
SECTOR ARCHITECTURE
PAGE 8
SECTOR 2
SECTOR 2 = 256 Pages
67,584 bytes (64K + 2K)
BLOCK 1
BLOCK 31
BLOCK 33
PAGE 6
PAGE 7
BLOCK 30
BLOCK 32
PAGE 1
PAGE 9
PAGE 14
PAGE 15
BLOCK 62
PAGE 16
BLOCK 63
PAGE 17
BLOCK 64
PAGE 18
BLOCK 65
SECTOR 3 = 512 Pages
135,168 bytes (128K + 4K)
PAGE 1021
BLOCK 126
BLOCK 127
Block = 2112 bytes
(2K + 64)
PAGE 1022
PAGE 1023
Page = 264 bytes
(256 + 8)
Device Operation
The device operation is controlled by instructions from the
host processor. The list of instructions and their associated
opcodes are contained in Tables 1 through 4, starting on
page 8. A valid instruction starts with the falling edge of CS
followed by the appropriate 8-bit opcode and the desired
buffer or main memory address location. While the CS pin
is low, toggling the SCK pin controls the loading of the
opcode and the desired buffer or main memory address
location through the SI (serial input) pin. All instructions,
addresses, and data are transferred with the most significant bit (MSB) first.
Buffer addressing is referenced in the datasheet using the
terminology BFA8-BFA0 to denote the nine address bits
required to designate a byte address within a buffer. Main
memory addressing is referenced using the terminology
PA9-PA0 and BA8-BA0 where PA9-PA0 denotes the
10 address bits required to designate a page address and
BA8-BA0 denotes the nine address bits required to designate a byte address within the page.
Read Commands
By specifying the appropriate opcode, data can be read
from the main memory or from either one of the two data
buffers. The DataFlash supports two categories of read
modes in relation to the SCK signal. The differences
between the modes are in respect to the inactive state of
the SCK signal as well as which clock cycle data will begin
to be output. The two categories, which are comprised of
four modes total, are defined as Inactive Clock Polarity Low
or Inactive Clock Polarity High and SPI Mode 0 or SPI
Mode 3. A separate opcode (refer to Table 1 on page 8 for
a complete list) is used to select which category will be
used for reading. Please refer to the “Detailed Bit-level
Read Timing” diagrams in this datasheet for details on the
clock cycle sequences for each mode.
CONTINUOUS ARRAY READ: By supplying an initial
starting address for the main memory array, the Continuous Array Read command can be utilized to sequentially
read a continuous stream of data from the device by simply
providing a clock signal; no additional addressing information or control signals need to be provided. The DataFlash
incorporates an internal address counter that will automatically increment on every clock cycle, allowing one
continuous read operation without the need of additional
address sequences. To perform a continuous read, an
opcode of 68H or E8H must be clocked into the device
followed by 24 address bits and 32 don’t care bits. The first
five bits of the 24-bit address sequence are reserved for
upward and downward compatibility to larger and smaller
density devices (see Notes under “Command Sequence for
Read/Write Operations” diagram). The next 10 address bits
(PA9-PA0) specify which page of the main memory array to
read, and the last nine bits (BA8-BA0) of the 24-bit address
sequence specify the starting byte address within the page.
The 32 don’t care bits that follow the 24 address bits are
needed to initialize the read operation. Following the 32
don’t care bits, additional clock pulses on the SCK pin will
result in serial data being output on the SO (serial output)
pin.
3
The CS pin must remain low during the loading of the
opcode, the address bits, the don’t care bits, and the reading of data. When the end of a page in main memory is
reached during a Continuous Array Read, the device will
continue reading at the beginning of the next page with no
delays incurred during the page boundary crossover (the
crossover from the end of one page to the beginning of the
next page). When the last bit in the main memory array has
been read, the device will continue reading back at the
beginning of the first page of memory. As with crossing
over page boundaries, no delays will be incurred when
wrapping around from the end of the array to the beginning
of the array.
A low-to-high transition on the CS pin will terminate the
read operation and tri-state the SO pin. The maximum SCK
frequency allowable for the Continuous Array Read is
defined by the f CAR specification. The Continuous Array
Read bypasses both data buffers and leaves the contents
of the buffers unchanged.
BURST ARRAY READ: The Burst Array Read operation
functions almost identically to the Continuous Array Read
operation but allows much higher read throughputs by utilizing faster clock frequencies. The Burst Array Read
command allows the device to burst an entire page of data
out at the maximum SCK frequency defined by the fBAR
parameter. Differences between the Burst Array Read and
Continuous Array Read operations are limited to timing
only. The opcodes utilized and the opcode and addressing
sequence for the Burst Array Read are identical to the Continuous Array Read. The opcode of 68H or E8H must be
clocked into the device followed by the 24 address bits and
32 don’t care bits. Following the 32 don’t care bits, additional clock pulses on the SCK pin will result in serial data
being output on the SO (serial output) pin.
As with the Continuous Array Read, the CS pin must
remain low during the loading of the opcode, the address
bits, the don’t care bits, and the reading of data. During a
Burst Array Read, when the end of a page in main memory
is reached (the last bit of the page has been clocked out),
the system must delay the next SCK pulse by a minimum
time of tBRBD. This delay is necessary to allow the device
enough time to cross over the burst read boundary, which
is defined as the end of one page in memory to the beginning of the next page. When the last bit in the main memory
array has been read, the device will continue reading back
at the beginning of the first page of memory. The transition
from the last bit of the array back to the beginning of the
array is also considered a burst read boundary. Therefore,
the system must delay the SCK pulse that will be used to
read the first bit of the memory array by a minimum time of
tBRBD.
A low-to-high transition on the CS pin will terminate the
read operation and tri-state the SO pin. The maximum SCK
frequency allowable for the Burst Array Read is defined by
4
AT45D021A
the fBAR specification. The Burst Array Read bypasses both
data buffers and leaves the contents of the buffers
unchanged.
MAIN MEMORY PAGE READ: A Main Memory Page Read
allows the user to read data directly from any one of the
1024 pages in the main memory, bypassing both of the
data buffers and leaving the contents of the buffers
unchanged. To start a page read, an opcode of 52H or D2H
must be clocked into the device followed by 24 address bits
and 32 don’t care bits. The first five bits of the 24-bit
address sequence are reserved bits, the next 10 address
bits (PA9-PA0) specify the page address, and the next nine
address bits (BA8-BA0) specify the starting byte address
within the page. The 32 don’t care bits which follow the 24
address bits are sent to initialize the read operation. Following the 32 don’t care bits, additional pulses on SCK
result in serial data being output on the SO (serial output)
pin. The CS pin must remain low during the loading of the
opcode, the address bits, the don’t care bits, and the reading of data. When the end of a page in main memory is
reached during a Main Memory Page Read, the device will
continue reading at the beginning of the same page. A lowto-high transition on the CS pin will terminate the read
operation and tri-state the SO pin.
BUFFER READ: Data can be read from either one of the
two buffers, using different opcodes to specify which buffer
to read from. An opcode of 54H or D4H is used to read data
from buffer 1, and an opcode of 56H or D6H is used to read
data from buffer 2. To perform a Buffer Read, the eight bits
of the opcode must be followed by 15 don’t care bits, nine
address bits, and eight don’t care bits. Since the buffer size
is 264-bytes, nine address bits (BFA8-BFA0) are required
to specify the first byte of data to be read from the buffer.
The CS pin must remain low during the loading of the
opcode, the address bits, the don’t care bits, and the reading of data. When the end of a buffer is reached, the device
will continue reading back at the beginning of the buffer. A
low-to-high transition on the CS pin will terminate the read
operation and tri-state the SO pin.
STATUS REGISTER READ: The status register can be
used to determine the device’s ready/busy status, the
result of a Main Memory Page to Buffer Compare operation, or the device density. To read the status register, an
opcode of 57H or D7H must be loaded into the device.
After the last bit of the opcode is shifted in, the eight bits of
the status register, starting with the MSB (bit 7), will be
shifted out on the SO pin during the next eight clock cycles.
The five most-significant bits of the status register will contain device information, while the remaining three leastsignificant bits are reserved for future use and will have
undefined values. After bit 0 of the status register has been
shifted out, the sequence will repeat itself (as long as CS
remains low and SCK is being toggled) starting again with
bit 7. The data in the status register is constantly updated,
so each repeating sequence will output new data.
AT45D021A
Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
RDY/BUSY
COMP
0
1
0
X
X
X
Ready/Busy status is indicated using bit 7 of the status register. If bit 7 is a 1, then the device is not busy and is ready
to accept the next command. If bit 7 is a 0, then the device
is in a busy state. The user can continuously poll bit 7 of the
status register by stopping SCK once bit 7 has been output.
The status of bit 7 will continue to be output on the SO pin,
and once the device is no longer busy, the state of SO will
change from 0 to 1. There are eight operations which can
cause the device to be in a busy state: Main Memory Page
to Buffer Transfer, Main Memory Page to Buffer Compare,
Buffer to Main Memory Page Program with Built-in Erase,
Buffer to Main Memory Page Program without Built-in
Erase, Page Erase, Block Erase, Main Memory Page Program, and Auto Page Rewrite.
The result of the most recent Main Memory Page to Buffer
Compare operation is indicated using bit 6 of the status
register. If bit 6 is a 0, then the data in the main memory
page matches the data in the buffer. If bit 6 is a 1, then at
least one bit of the data in the main memory page does not
match the data in the buffer.
The device density is indicated using bits 5, 4, and 3 of the
status register. For the AT45D021A, the three bits are 0, 1,
and 0. The decimal value of these three binary bits does
not equate to the device density; the three bits represent a
combinational code relating to differing densities of Serial
DataFlash devices, allowing a total of eight different density
configurations.
Program and Erase Commands
BUFFER WRITE: Data can be shifted in from the SI pin
into either buffer 1 or buffer 2. To load data into either
buffer, an 8-bit opcode, 84H for buffer 1 or 87H for buffer 2,
must be followed by 15 don’t care bits and nine address
bits (BFA8-BFA0). The nine address bits specify the first
byte in the buffer to be written. The data is entered following the address bits. If the end of the data buffer is reached,
the device will wrap around back to the beginning of the
buffer. Data will continue to be loaded into the buffer until a
low-to-high transition is detected on the CS pin.
BUFFER TO MAIN MEMORY PAGE PROGRAM WITH
BUILT-IN ERASE: Data written into either buffer 1 or buffer
2 can be programmed into the main memory. To start the
operation, an 8-bit opcode, 83H for buffer 1 or 86H for
buffer 2, must be followed by the five reserved bits, 10
address bits (PA9-PA0) that specify the page in the main
memory to be written, and nine additional don’t care bits.
When a low-to-high transition occurs on the CS pin, the
part will first erase the selected page in main memory to all
1s and then program the data stored in the buffer into the
specified page in the main memory. Both the erase and the
programming of the page are internally self-timed and
should take place in a maximum time of tEP. During this
time, the status register will indicate that the part is busy.
BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE: A previously erased page within
main memory can be programmed with the contents of
either buffer 1 or buffer 2. To start the operation, an 8-bit
opcode, 88H for buffer 1 or 89H for buffer 2, must be
followed by the five reserved bits, 10 address bits (PA9PA0) that specify the page in the main memory to be written, and nine additional don’t care bits. When a low-to-high
transition occurs on the CS pin, the part will program the
data stored in the buffer into the specified page in the main
memory. It is necessary that the page in main memory that
is being programmed has been previously erased. The programming of the page is internally self-timed and should
take place in a maximum time of tP. During this time, the
status register will indicate that the part is busy.
PAGE ERASE: The optional Page Erase command can be
used to individually erase any page in the main memory
array allowing the Buffer to Main Memory Page Program
without Built-in Erase command to be utilized at a later
time. To perform a Page Erase, an opcode of 81H must be
loaded into the device, followed by five reserved bits,
10 address bits (PA9-PA0), and nine don’t care bits. The
nine address bits are used to specify which page of the
memory array is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected
page to 1s. The erase operation is internally self-timed and
should take place in a maximum time of tPE. During this
time, the status register will indicate that the part is busy.
BLOCK ERASE: A block of eight pages can be erased at
one time allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized to
reduce programming times when writing large amounts of
data to the device. To perform a Block Erase, an opcode of
50H must be loaded into the device, followed by five
reserved bits, seven address bits (PA9-PA3), and 12 don’t
care bits. The seven address bits are used to specify which
block of eight pages is to be erased. When a low-to-high
transition occurs on the CS pin, the part will erase the
selected block of eight pages to 1s. The erase operation is
internally self-timed and should take place in a maximum
time of tBE. During this time, the status register will indicate
that the part is busy.
5
Block Erase Addressing
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
Block
0
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
0
1
0
X
X
X
2
0
0
0
0
0
1
1
X
X
X
3
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
1
0
0
X
X
X
124
1
1
1
1
1
0
1
X
X
X
125
1
1
1
1
1
1
0
X
X
X
126
1
1
1
1
1
1
1
X
X
X
127
MAIN MEMORY PAGE PROGRAM THROUGH BUFFER:
This operation is a combination of the Buffer Write and
Buffer to Main Memory Page Program with Built-in Erase
operations. Data is first shifted into buffer 1 or buffer 2 from
the SI pin and then programmed into a specified page in
the main memory. To initiate the operation, an 8-bit
opcode, 82H for buffer 1 or 85H for buffer 2, must be followed by the five reserved bits and 20 address bits. The 10
most significant address bits (PA9-PA0) select the page in
the main memory where data is to be written, and the next
nine address bits (BFA8-BFA0) select the first byte in the
buffer to be written. After all address bits are shifted in, the
part will take data from the SI pin and store it in one of the
data buffers. If the end of the buffer is reached, the device
will wrap around back to the beginning of the buffer. When
there is a low-to-high transition on the CS pin, the part will
first erase the selected page in main memory to all 1s and
then program the data stored in the buffer into the specified
page in the main memory. Both the erase and the programming of the page are internally self-timed and should take
place in a maximum of time tEP. During this time, the status
register will indicate that the part is busy.
Additional Commands
MAIN MEMORY PAGE TO BUFFER TRANSFER: A page
of data can be transferred from the main memory to either
buffer 1 or buffer 2. To start the operation, an 8-bit opcode,
53H for buffer 1 and 55H for buffer 2, must be followed by
the five reserved bits, 10 address bits (PA9-PA0) which
specify the page in main memory that is to be transferred,
and nine don’t care bits. The CS pin must be low while toggling the SCK pin to load the opcode, the address bits, and
the don’t care bits from the SI pin. The transfer of the page
of data from the main memory to the buffer will begin when
the CS pin transitions from a low to a high state. During the
6
AT45D021A
transfer of a page of data (tXFR), the status register can be
read to determine whether the transfer has been completed
or not.
MAIN MEMORY PAGE TO BUFFER COMPARE: A page
of data in main memory can be compared to the data in
buffer 1 or buffer 2. To initiate the operation, an 8-bit
opcode, 60H for buffer 1 and 61H for buffer 2, must be followed by 24 address bits consisting of the five reserved
bits, 10 address bits (PA9-PA0) which specify the page in
the main memory that is to be compared to the buffer, and
nine don’t care bits. The CS pin must be low while toggling
the SCK pin to load the opcode, the address bits, and the
don’t care bits from the SI pin. On the low-to-high transition
of the CS pin, the 264 bytes in the selected main memory
page will be compared with the 264 bytes in buffer 1 or
buffer 2. During this time (tXFR), the status register will indicate that the part is busy. On completion of the compare
operation, bit 6 of the status register is updated with the
result of the compare.
AUTO PAGE REWRITE: This mode is needed only if multiple bytes within a page or multiple pages of data are
modified in a random fashion. This mode is a combination
of two operations: Main Memory Page to Buffer Transfer
and Buffer to Main Memory Page Program with Built-in
Erase. A page of data is first transferred from the main
memory to buffer 1 or buffer 2, and then the same data
(from buffer 1 or buffer 2) is programmed back into its
original page of main memory. To start the rewrite operation, an 8-bit opcode, 58H for buffer 1 or 59H for buffer 2,
must be followed by the five reserved bits, 10 address bits
(PA9-PA0) that specify the page in main memory to be
rewritten, and nine additional don’t care bits. When a lowto-high transition occurs on the CS pin, the part will first
transfer data from the page in main memory to a buffer and
then program the data from the buffer back into same page
AT45D021A
of main memory. The operation is internally self-timed and
should take place in a maximum time of tEP. During this
time, the status register will indicate that the part is busy.
If a sector is programmed or reprogrammed sequentially
page-by-page, then the programming algorithm shown in
Figure 1 on page 24 is recommended. Otherwise, if multiple bytes in a page or several pages are programmed
randomly in a sector, then the programming algorithm
shown in Figure 2 on page 25 is recommended.
Operation Mode Summary
The modes described can be separated into two groups –
modes which make use of the Flash memory array (Group
A) and modes which do not make use of the Flash memory
array (Group B).
Group A modes consist of:
1. Main Memory Page Read
2. Main Memory Page to Buffer 1 (or 2) Transfer
3. Main Memory Page to Buffer 1 (or 2) Compare
4. Buffer 1 (or 2) to Main Memory Page Program with
Built-in Erase
5. Buffer 1 (or 2) to Main Memory Page Program
without Built-in Erase
6. Page Erase
7. Block Erase
8. Main Memory Page Program through Buffer
9. Auto Page Rewrite
Group B modes consist of:
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
If a Group A mode is in progress (not fully completed) then
another mode in Group A should not be started. However,
during this time in which a Group A mode is in progress,
modes in Group B can be started.
This gives the Serial DataFlash the ability to virtually
accommodate a continuous data stream. While data is
being programmed into main memory from buffer 1, data
can be loaded into buffer 2 (or vice versa). See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more
details.
Pin Descriptions
SERIAL INPUT (SI): The SI pin is an input only pin and is
used to shift data into the device. The SI pin is used for all
data input including opcodes and address sequences.
SERIAL OUTPUT (SO): The SO pin is an output only pin
and is used to shift data out from the device.
SERIAL CLOCK (SCK): The SCK pin is an input only pin
and is used to control the flow of data to and from the
DataFlash. Data is always clocked into the device on the
rising edge of SCK and clocked out of the device on the
falling edge of SCK.
CHIP SELECT (CS): The DataFlash is selected when the
CS pin is low. When the device is not selected, data will not
be accepted on the SI pin, and the SO pin will remain in a
high impedance state. A high-to-low transition on the CS
pin is required to start an operation, and a low-to-high transition on the CS pin is required to end an operation.
WRITE PROTECT: If the WP pin is held low, the first 256
pages of the main memory cannot be reprogrammed. The
only way to reprogram the first 256 pages is to first drive
the protect pin high and then use the program commands
previously mentioned. The WP pin is internally pulled high;
therefore, connection of the WP pin is not necessary if this
pin and feature will not be utilized. However, it is recommended that the WP pin be driven high externally
whenever possible.
RESET: A low state on the reset pin (RESET) will terminate
the operation in progress and reset the internal state
machine to an idle state. The device will remain in the reset
condition as long as a low level is present on the RESET
pin. Normal operation can resume once the RESET pin is
brought back to a high level.
The device incorporates an internal power-on reset circuit,
so there are no restrictions on the RESET pin during
power-on sequences. The RESET pin is also internally
pulled high; therefore, connection of the RESET pin is not
necessary if this pin and feature will not be utilized. However, it is recommended that the RESET pin be driven high
externally whenever possible.
READY/BUSY: This open drain output pin will be driven
low when the device is busy in an internally self-timed operation. This pin, which is normally in a high state (through
a 1kΩ external pull-up resistor), will be pulled low during
programming operations, compare operations, and during
page-to-buffer transfers.
The busy status indicates that the Flash memory array and
one of the buffers cannot be accessed; read and write
operations to the other buffer can still be performed.
Power-on/Reset State
When power is first applied to the device, or when recovering from a reset condition, the device will default to SPI
Mode 3. In addition, the SO pin will be in a high impedance
state, and a high-to-low transition on the CS pin will be
required to start a valid instruction. The SPI mode will be
automatically selected on every falling edge of CS by
sampling the inactive clock state.
7
Table 1. Read Commands
Command
SCK Mode
Opcode
Inactive Clock Polarity Low or High
68H
SPI Mode 0 or 3
E8H
Inactive Clock Polarity Low or High
68H
SPI Mode 0 or 3
E8H
Inactive Clock Polarity Low or High
52H
SPI Mode 0 or 3
D2H
Inactive Clock Polarity Low or High
54H
SPI Mode 0 or 3
D4H
Inactive Clock Polarity Low or High
56H
SPI Mode 0 or 3
D6H
Inactive Clock Polarity Low or High
57H
SPI Mode 0 or 3
D7H
Continuous Array Read
Burst Array Read
Main Memory Page Read
Buffer 1 Read
Buffer 2 Read
Status Register Read
Table 2. Program and Erase Commands
Command
SCK Mode
Opcode
Buffer 1 Write
Any
84H
Buffer 2 Write
Any
87H
Buffer 1 to Main Memory Page Program with Built-in Erase
Any
83H
Buffer 2 to Main Memory Page Program with Built-in Erase
Any
86H
Buffer 1 to Main Memory Page Program without Built-in Erase
Any
88H
Buffer 2 to Main Memory Page Program without Built-in Erase
Any
89H
Page Erase
Any
81H
Block Erase
Any
50H
Main Memory Page Program through Buffer 1
Any
82H
Main Memory Page Program through Buffer 2
Any
85H
SCK Mode
Opcode
Main Memory Page to Buffer 1 Transfer
Any
53H
Main Memory Page to Buffer 2 Transfer
Any
55H
Main Memory Page to Buffer 1 Compare
Any
60H
Main Memory Page to Buffer 2 Compare
Any
61H
Auto Page Rewrite through Buffer 1
Any
58H
Auto Page Rewrite through Buffer 2
Any
59H
Table 3. Additional Commands
Command
Note:
8
In Tables 2 and 3, an SCK mode designation of “Any” denotes any one of the four modes of operation (Inactive Clock Polarity
Low, Inactive Clock Polarity High, SPI Mode 0, or SPI Mode 3).
AT45D021A
AT45D021A
Table 4. Detailed Bit-level Addressing Sequence
Address Byte
Reserved
Reserved
Reserved
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
BA8
BA7
BA6
BA5
BA4
BA3
BA2
BA1
BA0
Additional
Don’t Care
Bytes
Required
Reserved
Address Byte
50H
0 1 0 1 0 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
x
x
x
N/A
52H
0 1 0 1 0 0 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
4 Bytes
53H
0 1 0 1 0 0 1 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
54H
0 1 0 1 0 1 0 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
55H
0 1 0 1 0 1 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
56H
0 1 0 1 0 1 1 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
57H
0 1 0 1 0 1 1 1
58H
0 1 0 1 1 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
59H
0 1 0 1 1 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
60H
0 1 1 0 0 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
61H
0 1 1 0 0 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
68H
0 1 1 0 1 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
4 Bytes
81H
1 0 0 0 0 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
82H
1 0 0 0 0 0 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
N/A
83H
1 0 0 0 0 0 1 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
84H
1 0 0 0 0 1 0 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
N/A
85H
1 0 0 0 0 1 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
N/A
86H
1 0 0 0 0 1 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
87H
1 0 0 0 0 1 1 1 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
N/A
88H
1 0 0 0 1 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
89H
1 0 0 0 1 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
D2H
1 1 0 1 0 0 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
4 Bytes
D4H
1 1 0 1 0 1 0 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
D6H
1 1 0 1 0 1 1 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
D7H
1 1 0 1 0 1 1 1
E8H
1 1 1 0 1 0 0 0 r
Opcode
Note:
Opcode
Reserved
Address Byte
N/A
N/A
N/A
r
r
r
r
N/A
N/A
P
P
P
P
P
P
P
P
N/A
N/A
P
P
B
B
B
B
B
B
N/A
B
B
B
4 Bytes
r = Reserved Bit
P = Page Address Bit
B = Byte/Buffer Address Bit
x = Don’t Care
9
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
DC and AC Operating Range
AT45D021A
Operating Temperature
(Case)
Com.
Ind.
VCC Power Supply(1)
Note:
10
0°C to 70°C
-40°C to 85°C
4.5V to 5.5V
1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before an
operational mode is started.
AT45D021A
AT45D021A
DC Characteristics
Symbol
Parameter
Condition
ISB
Standby Current
ICC1
Min
Typ
Max
Units
CS, RESET, WP = VCC, all inputs
at CMOS levels
10
20
µA
Active Current, Read
Operation
f = 15 MHz; IOUT = 0 mA;
VCC = 5.5V
15
25
mA
ICC2
Active Current,
Program/Erase Operation
VCC = 5.5V
25
50
mA
ILI
Input Load Current
VIN = CMOS levels
10
µA
ILO
Output Leakage Current
VI/O = CMOS levels
10
µA
VIL
Input Low Voltage
0.8
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1 mA
VOH1
Output High Voltage
IOH = -400 µA
2.4
V
VOH2
Output High Voltage
IOH = -100 µA; VCC = 4.5V
4.2
V
2.0
V
0.45
V
AC Characteristics
Symbol
Parameter
fSCK
Min
Max
Units
SCK Frequency
15
MHz
fCAR
SCK Frequency for Continuous Array Read
10
MHz
fBAR
SCK Frequency for Burst Array Read
15
MHz
tWH
SCK High Time
30
ns
tWL
SCK Low Time
30
ns
tCS
Minimum CS High Time
250
ns
tCSS
CS Setup Time
250
ns
tCSH
CS Hold Time
250
ns
tCSB
CS High to RDY/BUSY Low
tSU
Data In Setup Time
10
ns
tH
Data In Hold Time
15
ns
tHO
Output Hold Time
0
ns
tDIS
Output Disable Time
20
ns
tV
Output Valid
25
ns
tBRBD
Burst Read Boundary Delay
tXFR
Page to Buffer Transfer/Compare Time
150
µs
tEP
Page Erase and Programming Time
20
ms
tP
Page Programming Time
14
ms
tPE
Page Erase Time
8
ms
tBE
Block Erase Time
12
ms
tRST
RESET Pulse Width
tREC
RESET Recovery Time
200
1
ns
µs
10
µs
1
µs
11
Input Test Waveforms and
Measurement Levels
AC
DRIVING
LEVELS
2.4V
DEVICE
UNDER
TEST
AC
MEASUREMENT
LEVEL
2.0
0.8
0.45V
Output Test Load
30 pF
tR, tF < 5 ns (10% to 90%)
AC Waveforms
Two different timing diagrams are shown below. Waveform
1 shows the SCK signal being low when CS makes a highto-low transition, and Waveform 2 shows the SCK signal
being high when CS makes a high-to-low transition. Both
waveforms show valid timing diagrams. The setup and hold
times for the SI signal are referenced to the low-to-high
transition on the SCK signal.
Waveform 1 shows timing that is also compatible with SPI
Mode 0, and Waveform 2 shows timing that is compatible
with SPI Mode 3.
Waveform 1 – Inactive Clock Polarity Low and SPI Mode 0
tCS
CS
tWH
tCSS
tWL
tCSH
SCK
tHO
tV
SO
HIGH IMPEDANCE
VALID OUT
tSU
tDIS
HIGH IMPEDANCE
tH
VALID IN
SI
Waveform 2 – Inactive Clock Polarity High and SPI Mode 3
tCS
CS
tCSS
tWL
tWH
tCSH
SCK
tV
SO
tHO
HIGH Z
VALID OUT
tSU
SI
12
tH
VALID IN
AT45D021A
tDIS
HIGH IMPEDANCE
AT45D021A
Reset Timing (Inactive Clock Polarity Low Shown)
CS
tREC
tCSS
SCK
tRST
RESET
HIGH IMPEDANCE
HIGH IMPEDANCE
SO
SI
Note:
The CS signal should be in the high state before the RESET signal is deasserted.
Command Sequence for Read/Write Operations (except Status Register Read)
SI
MSB
r r r r rXXX
Reserved for
larger densities
Notes:
CMD
8 bits
8 bits
XXXX XXXX
Page Address
(PA9-PA0)
8 bits
XXXX XXXX
LSB
Byte/Buffer Address
(BA8-BA0/BFA8-BFA0)
1. “r” designates bits reserved for larger densities.
2. It is recommended that “r” be a logical “0” for densities of 2M bits or smaller.
3. For densities larger than 2M bits, the “r” bits become the most significant Page Address bit for the appropriate density.
13
Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER 1 TO
MAIN MEMORY
PAGE PROGRAM
MAIN MEMORY
PAGE PROGRAM
THROUGH BUFFER 2
BUFFER 1 (264 BYTES)
BUFFER 2 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 2 (264 BYTES)
MAIN MEMORY PAGE
PROGRAM THROUGH
BUFFER 1
BUFFER 1
WRITE
BUFFER 2
WRITE
I/O INTERFACE
SI
Main Memory Page Program through Buffers
· Completes writing into selected buffer
· Starts self-timed erase/program operation
CS
SI
CMD
r r r r r, PA9-7
PA6-0, BFA8
BFA7-0
n
n+1
Last Byte
Buffer Write
· Completes writing into selected buffer
CS
SI
CMD
X
X···X, BFA8
BFA7-0
n
n+1
Last Byte
Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
Starts self-timed erase/program operation
CS
SI
Each transition represents
8 bits and 8 clock cycles
14
AT45D021A
CMD
r r r r r, PA9-7
PA6-0, X
X
n = 1st byte read
n+1 = 2nd byte read
AT45D021A
Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
MAIN MEMORY
PAGE TO
BUFFER 2
MAIN MEMORY
PAGE TO
BUFFER 1
BUFFER 1 (264 BYTES)
BUFFER 2 (264 BYTES)
BUFFER 1
READ
BUFFER 2
READ
MAIN MEMORY
PAGE READ
I/O INTERFACE
SO
Main Memory Page Read
CS
SI
r r r r r, PA9-7
CMD
BA7-0
PA6-0, BA8
X
X
X
X
SO
n
n+1
Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)
Starts reading page data into buffer
CS
SI
CMD
r r r r r, PA9-7
PA6-0, X
X
SO
Buffer Read
CS
SI
SO
Each transition represents
8 bits and 8 clock cycles
CMD
X
X···X, BFA8
BFA7-0
X
n
n+1
n = 1st byte read
n+1 = 2nd byte read
15
Detailed Bit-level Read Timing – Inactive Clock Polarity Low
Continuous Array Read (Opcode: 68H)
CS
SCK
1
2
63
64
0
1
X
X
65
66
67
68
tSU
SI
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
D6
D5
BIT 0
OF
PAGE n+1
Burst Array Read (Opcode: 68H)
CS
SCK
1
2
63
64
65
66
67
tBRBD
tSU
SI
0
1
X
X
tV
SO
16
HIGH-IMPEDANCE
AT45D021A
DATA OUT
D7
D6
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
BIT 0
OF
PAGE n+1
D6
D5
AT45D021A
Detailed Bit-level Read Timing – Inactive Clock Polarity Low (Continued)
Main Memory Page Read (Opcode: 52H)
CS
SCK
1
2
3
4
5
60
61
62
63
64
0
X
X
X
X
X
65
66
67
tSU
COMMAND OPCODE
SI
1
0
1
0
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
MSB
D6
42
43
D5
Buffer Read (Opcode: 54H or 56H)
CS
SCK
1
2
3
4
5
36
37
38
39
40
0
X
X
X
X
X
41
tSU
COMMAND OPCODE
SI
1
0
1
0
tV
HIGH-IMPEDANCE
SO
DATA OUT
D7
MSB
D6
D5
Status Register Read (Opcode: 57H)
CS
SCK
1
2
3
4
5
6
7
8
1
1
9
10
11
12
16
17
tSU
COMMAND OPCODE
SI
0
1
0
1
0
1
tV
SO
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D7
MSB
D6
D5
D1
D0
LSB
D7
MSB
17
Detailed Bit-level Read Timing – Inactive Clock Polarity High
Continuous Array Read (Opcode: 68H)
CS
SCK
1
2
63
64
65
66
67
tSU
SI
1
0
X
X
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
D6
D5
BIT 0
OF
PAGE n+1
Burst Array Read (Opcode: 68H)
CS
SCK
1
63
2
64
65
66
tBRBD
tSU
SI
0
1
X
X
X
tV
SO
18
HIGH-IMPEDANCE
AT45D021A
DATA OUT
D7
D6
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
BIT 0
OF
PAGE n+1
D6
D5
AT45D021A
Detailed Bit-level Read Timing – Inactive Clock Polarity High (Continued)
Main Memory Page Read (Opcode: 52H)
CS
SCK
1
2
3
4
5
61
62
63
64
65
66
67
68
tSU
COMMAND OPCODE
SI
1
0
1
0
0
X
X
X
X
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
MSB
D6
D5
D4
Buffer Read (Opcode: 54H or 56H)
CS
SCK
1
2
3
4
5
37
38
39
40
41
42
43
44
tSU
COMMAND OPCODE
SI
1
0
1
0
0
X
X
X
X
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
MSB
D6
D5
D4
Status Register Read (Opcode: 57H)
CS
SCK
1
2
3
4
5
6
7
8
9
10
11
12
17
18
tSU
COMMAND OPCODE
SI
0
1
0
1
0
1
1
1
tV
SO
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D7
MSB
D6
D5
D4
D0
LSB
D7
MSB
D6
19
Detailed Bit-level Read Timing – SPI Mode 0
Continuous Array Read (Opcode: E8H)
CS
SCK
1
2
62
63
64
1
1
X
X
X
65
66
67
tSU
SI
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
D6
D5
BIT 0
OF
PAGE n+1
Burst Array Read (Opcode: E8H)
CS
SCK
1
2
62
63
64
65
66
tBRBD
tSU
SI
1
1
X
X
X
tV
SO
20
HIGH-IMPEDANCE
AT45D021A
DATA OUT
D7
D6
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
BIT 0
OF
PAGE n+1
D6
D5
AT45D021A
Detailed Bit-level Read Timing – SPI Mode 0 (Continued)
Main Memory Page Read (Opcode: D2H)
CS
SCK
1
2
3
4
5
60
61
62
63
64
0
X
X
X
X
X
65
66
67
tSU
COMMAND OPCODE
SI
1
1
1
0
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
42
43
D4
MSB
Buffer Read (Opcode: D4H or D6H)
CS
SCK
1
2
3
4
5
36
37
38
39
40
0
X
X
X
X
X
41
tSU
COMMAND OPCODE
SI
1
1
1
0
tV
HIGH-IMPEDANCE
SO
DATA OUT
D7
D6
D4
D5
MSB
Status Register Read (Opcode: D7H)
CS
SCK
1
2
3
4
5
6
7
8
1
1
9
10
D7
MSB
D6
11
12
16
17
tSU
COMMAND OPCODE
SI
1
1
0
1
0
1
tV
SO
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D5
D4
D1
D0
LSB
D7
MSB
21
Detailed Bit-level Read Timing – SPI Mode 3
Continuous Array Read (Opcode: E8H)
CS
SCK
1
2
63
64
65
66
67
tSU
SI
1
1
X
X
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
D6
D5
BIT 0
OF
PAGE n+1
Burst Array Read (Opcode: E8H)
CS
SCK
1
63
2
64
65
66
tBRBD
tSU
SI
1
1
X
X
X
tV
SO
22
HIGH-IMPEDANCE
AT45D021A
DATA OUT
D7
D6
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
BIT 0
OF
PAGE n+1
D6
D5
AT45D021A
Detailed Bit-level Read Timing – SPI Mode 3 (Continued)
Main Memory Page Read (Opcode: D2H)
CS
SCK
1
2
3
4
5
61
62
63
64
65
66
67
68
tSU
COMMAND OPCODE
SI
1
1
1
0
0
X
X
X
X
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
MSB
D6
D5
D4
Buffer Read (Opcode: D4H or D6H)
CS
SCK
1
2
3
4
5
37
38
39
40
41
42
44
43
tSU
COMMAND OPCODE
SI
1
1
1
0
0
X
X
X
X
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
MSB
D6
D5
D4
Status Register Read (Opcode: D7H)
CS
SCK
1
2
3
4
5
6
7
8
9
10
11
12
17
18
tSU
COMMAND OPCODE
SI
1
1
0
1
0
1
1
1
tV
SO
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D7
MSB
D6
D5
D4
D0
LSB
D7
MSB
D6
23
Figure 1. Algorithm for Sequentially Programming or Reprogramming the Entire Array
START
provide address
and data
BUFFER WRITE
(84H, 87H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
END
Notes:
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array
page-by-page.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
24
AT45D021A
AT45D021A
Figure 2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAIN MEMORY PAGE
TO BUFFER TRANSFER
(53H, 55H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
BUFFER WRITE
(84H, 87H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
AUTO PAGE REWRITE
(58H, 59H)
(2)
INCREMENT PAGE
(2)
ADDRESS POINTER
END
Notes:
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase/program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low power applications may choose to wait until 10,000
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
Sector Addressing
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2-PA0
Sector
0
0
0
0
0
0
0
X
0
0
0
X
X
X
X
X
X
1
0
1
X
X
X
X
X
X
2
1
X
X
X
X
X
X
X
3
25
Ordering Information
ICC (mA)
fSCK
(MHz)
Active
Standby
Ordering Code
Package
15
25
0.02
AT45D021A-JC
AT45D021A-RC
AT45D021A-TC
32J
28R
28T
Commercial
(0°C to 70°C)
15
25
0.02
AT45D021A-JI
AT45D021A-RI
AT45D021A-TI
32J
28R
28T
Industrial
(-40°C to 85°C)
Package Type
32J
32-lead, Plastic J-leaded Chip Carrier Package (PLCC)
28R
28-lead, 0.330" Wide, Plastic Gull Wing Small Outline Package (SOIC)
28T
28-lead, Plastic Thin Small Outline Package (TSOP)
26
AT45D021A
Operation Range
AT45D021A
Packaging Information
32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-016 AE
.045(1.14) X 45˚
.025(.635) X 30˚ - 45˚
.012(.305)
.008(.203)
PIN NO. 1
IDENTIFY
.530(13.5)
.490(12.4)
.553(14.0)
.547(13.9)
.595(15.1)
.585(14.9)
.032(.813)
.026(.660)
.050(1.27) TYP
28R, 28-lead, 0.330" Wide,
Plastic Gull Wing Small Outline (SOIC)
Dimensions in Inches and (Millimeters)
.021(.533)
.013(.330)
.030(.762)
.015(.381)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)
.300(7.62) REF
.430(10.9)
.390(9.90)
AT CONTACT
POINTS
.022(.559) X 45˚ MAX (3X)
.453(11.5)
.447(11.4)
.495(12.6)
.485(12.3)
28T, 28-lead, Plastic Thin Small Outline
Package (TSOP)
Dimensions in Millimeters and (Inches)*
INDEX
MARK
AREA
11.9 (0.469)
11.7 (0.461)
13.7 (0.539)
13.1 (0.516)
0.27 (0.011)
0.18 (0.007)
0.55 (0.022)
BSC
7.15 (0.281)
REF
8.10 (0.319)
7.90 (0.311)
1.25 (0.049)
1.05 (0.041)
0.20 (0.008)
0.10 (0.004)
0
5 REF
0.20 (0.008)
0.15 (0.006)
0.70 (0.028)
0.30 (0.012)
*Controlling dimension: millimeters
27
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