TVS8501V6 D

TVS8501V6
Transient Voltage
Suppressors
Features
• Protection for the following IEC Standards:
•
IEC61000−4−2 Level 4: ±30 kV Contact Discharge
IEC61000−4−5 (Lightning) 70 A (8/20 ms)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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1
Cathode
2
Anode
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Symbol
Value
Unit
±30
±30
kV
TJ, Tstg
−65 to +150
°C
IPP
70
A
Contact
Air
Operating Junction and Storage
Temperature Range
Maximum Peak Pulse Current
8/20 ms @ TA = 25°C
MARKING
DIAGRAM
UDFN2
CASE 517CZ
F
M
FM
= Specific Device Code
= Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
TVS8501V6MUT5G
UDFN2
(Pb−Free)
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 0
1
Publication Order Number:
TVS8501V6/D
TVS8501V6
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
IF
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
VC VBR VRWM
Working Peak Reverse Voltage
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage (Note 1)
Symbol
Conditions
Min
Typ
VRWM
VBR
IT = 1 mA
6.5
7.3
Max
Unit
6.3
V
9.0
V
1
mA
IPP = 1 A, tp = 8 x 20 ms
7.5
V
VC
IPP = 35 A, tp = 8 x 20 ms
9.5
V
Clamping Voltage (Note 2)
VC
IPP = 70 A, tp = 8 x 20 ms
11.5
V
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
Dynamic Resistance
RDYN
Reverse Leakage Current
IR
VRWM = 6.3 V
Clamping Voltage (Note 2)
VC
Clamping Voltage (Note 2)
TLP Pulse
12
pF
0.04
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
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2
TVS8501V6
14
9
8
12
7
10
Vpk (V)
5
4
3
8
6
4
2
2
1
0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
Ipk (A)
Ipk (A)
Figure 1. Positive TLP I−V Curve
Figure 2. Clamping Voltage vs. Peak Pulse
Current (tp = 8/20 ms)
50
45
40
35
C (pF)
Vpk (V)
6
30
25
20
15
10
5
0
0
1
2
3
4
VBias (V)
Figure 3. CV Characteristics
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3
5
6
80
TVS8501V6
Transmission Line Pulse (TLP) Measurement
L
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 4. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 5 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
S Attenuator
÷
50 W Coax
Cable
10 MW
IM
50 W Coax
Cable
VM
DUT
VC
Oscilloscope
Figure 4. Simplified Schematic of a Typical TLP
System
Figure 5. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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4
TVS8501V6
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test Voltage (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 6. IEC61000−4−2 Spec
ESD Gun
Oscilloscope
TVS
50 W
Cable
50 W
Figure 7. Diagram of ESD Test Setup
ESD Voltage Clamping
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 8. 8 X 20 ms Pulse Waveform
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5
80
TVS8501V6
PACKAGE DIMENSIONS
UDFN2 1.6x1.0, 1.1P
CASE 517CZ
ISSUE A
A
B
D
PIN ONE
REFERENCE
ÉÉÉ
ÉÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
E
DIM
A
A1
b
D
E
e
L
0.08 C
2X
2X
0.08 C TOP VIEW
A
0.05 C
MILLIMETERS
MIN
MAX
0.45
0.55
−−−
0.05
0.85
0.95
1.60 BSC
1.00 BSC
1.10 BSC
0.35
0.45
RECOMMENDED
SOLDERING FOOTPRINT*
0.05 C
A1
C
SIDE VIEW
1.70
SEATING
PLANE
e
2X
1.00
1
e/2
0.07
M
C A B
1
2X
b
2X
0.58
DIMENSIONS: MILLIMETERS
L
BOTTOM VIEW
0.07
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
C A B
ON Semiconductor and the
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TVS8501V6/D