PDF Data Sheet Rev. 0

Four-String, White LED Driver
for LCD Backlight Applications
ADD5211
Data Sheet
FEATURES
GENERAL DESCRIPTION
White LED driver based on an inductive boost controller
Wide input voltage range: 4.5 V to 40 V
Adaptive output voltage to minimize power dissipation
Adjustable operating frequency: 200 kHz to 1.2 MHz
Programmable UVLO
Programmable soft start time for boost converter
Programmable external MOSFET switching rising/falling time
Drives up to 4 LED current sinks with internal MOSFETs
Brightness control with PWM input
Adjustable LED current: 40 mA to 200 mA
Headroom control to maximize efficiency
LED dimming frequency: up to 25 kHz
PWM dimming at 300 Hz: 1000:1
Open-drain fault indicator
LED open and LED short fault protection
Thermal shutdown
Undervoltage lockout (UVLO)
24-lead, 4 mm × 4 mm LFCSP
The ADD5211 is a four-string, white LED driver for backlight
applications based on high efficiency, current mode, step-up
converter technology. The boost controller drives an external
MOSFET switch for step-up regulation from an input voltage
of 4.5 V to 40 V and a pin adjustable operating frequency from
200 kHz to 1.2 MHz. An adjustable UVLO function is implemented
to reduce input current during power-off.
The ADD5211 provides four regulated current sinks for uniform
brightness intensity. Each current sink can be driven from 40 mA
to 200 mA; the LED driving current is pin adjustable using an
external resistor. With an input PWM interface, the ADD5211
drives up to four parallel strings of multiple series connected LEDs.
Additional features include LED short protection, LED open
protection, boost output short protection, overvoltage protection,
cycle-by-cycle current limit, and thermal shutdown for both the
IC and the LED array. An open-drain fault output is also included.
A programmable soft start is implemented to reduce inrush
current during startup.
APPLICATIONS
LCD monitor and TV LED backlights
Industrial lighting
APPLICATION CIRCUIT
VIN
+
UVLO
VIN GATE_P GATE_N
VDR
CS
RAMP
OFF ON
EN
PGND
PWM
OVP
FAULT
ADD5211
VDD
FB4
FB3
FB2
LSD
FB1
ISET
LGND
COMP
SS
10555-001
AGND FREQ
Figure 1.
Rev. 0
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ADD5211
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................7
Applications ....................................................................................... 1
Typical Performance Characteristics ..............................................8
General Description ......................................................................... 1
Theory of Operation ...................................................................... 10
Application Circuit ........................................................................... 1
Current Mode, Step-Up Switching Controller ....................... 10
Revision History ............................................................................... 2
LED Current Regulation ........................................................... 11
Detailed Functional Block Diagram .............................................. 3
Fault Protection .......................................................................... 12
Specifications..................................................................................... 4
Applications Information .............................................................. 14
General Specifications ................................................................. 4
Layout Guidelines....................................................................... 14
Step-Up Switching Controller Specifications ........................... 5
Boost Component Selection ..................................................... 14
LED Current Regulation Specifications .................................... 5
Typical Application Circuits ......................................................... 17
Absolute Maximum Ratings ............................................................ 6
Outline Dimensions ....................................................................... 18
Thermal Resistance ...................................................................... 6
Ordering Guide .......................................................................... 18
ESD Caution .................................................................................. 6
REVISION HISTORY
10/13—Revision 0: Initial Version
Rev. 0 | Page 2 of 20
Data Sheet
ADD5211
DETAILED FUNCTIONAL BLOCK DIAGRAM
VDR
OVP
BOOST CONTROL
R
PWM
COMP
FB_REF
gm
FB_MIN
S
ERROR
AMP
COMP
GATE_P
Q
SWITCH
DRIVER
R
GATE_N
PGND
STARTUP
OSC
FREQ
SOFT START
SS
CURRENT SENSE
CS
RAMP
DREF
DCOMP
+
OVP_REF
RAMP
+
OVP
ADD5211
OVP
BOOST
SCP_REF
SCP
×10
OVP
POR
FAULT
DETECTOR
FAULT
LSD
POR
OPEN
LED
DETECTOR
THERMAL
SHUTDOWN
SHORT
LED
DETECTOR
UNUSED
STRING
DETECTOR
LINEAR
REGULATOR
VDR
VIN
DEVICE
ENABLE
FB_MIN
EN
STRING
VOLTAGE
DETECTOR
BAND GAP
REFERENCE
500kΩ
AGND
CURRENT SOURCE 1
FB1
AGND
UVLO
DETECTOR
UVLO
VOLTAGE
REGULATOR
CURRENT SOURCE 2
FB2
VDD
CURRENT SOURCE 3
POR
CONTROL LOGIC
PWM
500kΩ
FB3
VDD
BOOST CONTROL
STARTUP
DIMMING CONTROL
CURRENT SOURCE 4
FB4
AGND
BOOST
SHORT
REF
DIMMING CONTROL
LGND
10555-002
THERMAL
SHUTDOWN
ISET
Figure 2.
Rev. 0 | Page 3 of 20
ADD5211
Data Sheet
SPECIFICATIONS
VIN = 12 V, EN = 3.3 V, TJ = −40°C to +125°C, unless otherwise noted. Typical values are at TA = 25°C.
GENERAL SPECIFICATIONS
Table 1.
Parameter
SUPPLY
Input Voltage Range
Quiescent Current
Shutdown Supply Current
VIN Rising Threshold
VIN Falling Threshold
VDR REGULATOR
Regulated Output
Dropout Voltage
VDD REGULATOR
Regulated Output
PWM INPUT
Input High Voltage
Input Low Voltage
PWM Input Current
PWM High to LED Turn-On Delay 1
PWM Low to LED Turn-Off Delay1
EN CONTROL
EN Voltage High
EN Voltage Low
EN Pin Input Current
UNDERVOLTAGE LOCKOUT
UVLO Threshold (Rising)
UVLO Hysteresis
FAULT
Sink Resistance
Fault Pin Leakage Current
LED SHORT DETECTION
LED Short Detection Enable Threshold
LED Short Gain
LED Short Gain Control Range1
LED FAULT DETECTION DELAY1
LED Open Fault Delay
LED Short Fault Delay
OVERVOLTAGE PROTECTION
Overvoltage Threshold (Rising)
Overvoltage Hysteresis
Overvoltage Pin Leakage Current
Output Short-Circuit Threshold (Falling)
Output Short-Circuit Recovery (Rising)
THERMAL SHUTDOWN1
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
1
Symbol
VIN
IQ
ISD
VUVLOR_VIN
VUVLOF_VIN
VVDR_REG
VVDR_DROP
Test Conditions/Comments
Min
Typ
4.5
2.8
EN = 0 V
Minimum VIN for startup
3.2
4
3.65
Max
Unit
40
6
1
4.3
V
mA
µA
V
V
4.75
5.1
350
5.45
580
V
mV
VVDD_REG
3.0
3.3
3.6
V
VPWM_HIGH
VPWM_LOW
2.2
8
0.8
30
V
V
µA
µs
µs
17
0.8
30
V
V
µA
1.19
100
1.27
V
mV
40
100
1.5
Ω
µA
2.5
10
VDD
13
2.0
V
VIN = 4.5 V
PWM = 5 V
11
1.6
0.8
2.2
EN = 5 V
13
1.10
VLSD
LSD = 1.0 V
2.2
7.5
0.3
5
15
OVP_REF
OVP_HYS
2.3
2.5
100
V
µs
µs
2.7
VSCPF
VSCPR
100
150
V
mV
nA
mV
mV
TSD
TSDHYS
150
25
°C
°C
200
Guaranteed by design.
Rev. 0 | Page 4 of 20
Data Sheet
ADD5211
STEP-UP SWITCHING CONTROLLER SPECIFICATIONS
Table 2.
Parameter
BOOST FREQUENCY OSCILLATOR
Switching Frequency Range
Switching Frequency
PWM COMPARATOR
Maximum Duty Cycle
Leading Edge Blanking Time
CURRENT SENSE LIMIT COMPARATOR
Current-Limit Threshold
SLOPE COMPENSATION
Peak Slope Compensation Ramp
ERROR AMPLIFIER
Transconductance
Output Resistance
COMP Sink Current
COMP Source Current
MOSFET DRIVER
Source Voltage
Gate On Resistance
Gate Off Resistance
Rising Time
Falling Time
SOFT START
Soft Start Pin Current
Symbol
Test Conditions/Comments
fSW
RFREQ = 50 kΩ
RFREQ = 50 kΩ
CSLIMIT
Independent of duty cycle
Min
Typ
Max
Unit
200
280
360
1200
430
kHz
kHz
89
94
145
98
%
ns
275
345
400
mV
RRAMP = 5 kΩ
gm
R
8 V < VIN < 40 V
RDS_GATE_P
RDS_GATE_N
tR
tF
C = 1 nF
C = 1 nF
ISS
45
μA
570
72
400
400
μA/V
MΩ
μA
μA
5.1
5.8
2.4
26
21
V
Ω
Ω
ns
ns
2.1
μA
LED CURRENT REGULATION SPECIFICATIONS
Table 3.
Parameter
CURRENT SINK
Current Sink Range
Current Sink
String-to-String Tolerance1
Current Accuracy2
Minimum Headroom Voltage
Off Current
Off State Clamping Current
1
Symbol
Test Conditions/Comments
ILED
ILED100
ΔIFB100
ΔILED100
VHR
IOFF
ICLAMP
RSET = 15 kΩ, TA = 25°C
RSET = 15 kΩ, TA = 25°C
RSET = 15 kΩ, TA = 25°C
RSET = 15 kΩ, TA = 25°C
VFB = 40 V, EN = 0 V
VFB = 55 V, EN = 0 V
where IFB100 is the LED current of each string.
Current accuracy is the delta between average current, ILED100, and 100 mA with respect to 100 mA.
I LED100 
where
I LED100  100 mA
 100%
100 mA
I LED100 
IFB1  IFB2  IFB3  IFB4
4
Rev. 0 | Page 5 of 20
Typ
40
98
0.45
0.4
0.55
4
20
String-to-string tolerance is the greatest delta between FBx currents with respect to the average of the FBx currents.

I
I FB100(MIN)  I LED100
FB100(MAX)  I LED100
I FB100  Max 
 100% :
 100% 


I LED100
I LED100


2
Min
Max
Unit
200
102
2.5
2.0
0.85
1.5
80
mA
mA
%
%
V
μA
μA
ADD5211
Data Sheet
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
THERMAL RESISTANCE
Table 4.
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Parameter
VIN, UVLO
FB1, FB2, FB3, FB4
EN
PWM, FAULT
VDR, GATE_N, GATE_P
COMP, CS, FREQ, ISET, LSD, OVP, RAMP
SS
AGND, PGND, LGND
Maximum Junction Temperature
(TJ max)
Operating Temperature Range (TA)
Storage Temperature Range (TS)
Reflow Peak Temperature
(20 sec to 40 sec)
Rating
−0.3 V to +45 V
−0.3 V to +55 V
−0.3 V to +17 V
−0.3 V to +8 V
−0.3 V to +7 V
−0.3 V to +3.6 V
−0.3 V to VDD
−0.3 V to +0.3 V
150°C
Table 5. Thermal Resistance
Package Type
24-Lead LFCSP
ESD CAUTION
−25°C to +85°C
−65°C to +150°C
260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 6 of 20
θJA
40.5
θJC
3.8
Unit
°C/W
Data Sheet
ADD5211
19 PGND
21 CS
20 RAMP
22 GATE_N
24 AGND
23 GATE_P
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
18 OVP
VDR 1
UVLO 2
17 FB4
ADD5211
EN 4
TOP VIEW
16 FB3
15 LGND
LSD 12
VDD 11
ISET 10
FREQ 9
13 FB1
SS 7
14 FB2
FAULT 6
COMP 8
PWM 5
NOTES
1. CONNECT THE EXPOSED PAD TO GROUND.
10555-003
VIN 3
Figure 3. Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
1
2
Mnemonic
VDR
UVLO
3
4
5
6
7
8
VIN
EN
PWM
FAULT
SS
COMP
9
10
11
FREQ
ISET
VDD
12
13
14
15
16
17
18
19
20
21
22
23
24
LSD
FB1
FB2
LGND
FB3
FB4
OVP
PGND
RAMP
CS
GATE_N
GATE_P
AGND
EP
Description
Switching MOSFET Gate Driver Supply Pin. Bypass VDR to AGND with a 1 µF bypass capacitor.
Input Undervoltage Lockout. Set the start-up and shutdown input voltage level by connecting this pin to the input
voltage with a resistor divider.
Supply Input Pin. Bypass VIN to AGND with a 0.1 µF bypass capacitor.
Shutdown Control Pin for PWM Input Operation Mode.
PWM Signal Input.
Open-Drain Fault Output.
Soft Start Pin.
Compensation for the Boost Converter. A capacitor and a resistor are connected in series between ground and this
pin for stable operation.
Frequency Select. A resistor from this pin to ground sets the boost switching frequency from 200 kHz to 1.2 MHz.
Full-Scale LED Current Set Pin. A resistor from this pin to ground sets the LED current up to 200 mA.
Internal Linear Regulator Output. This regulator provides power to the ADD5211. Bypass VDD to AGND with a 1 µF
bypass capacitor.
LED Short Voltage Level Setting Pin. To disable LED short protection, connect this pin to VDD.
Regulated Current Sink. Connect the bottom cathode of the LED string to this pin. If unused, connect FB1 to LGND.
Regulated Current Sink. Connect the bottom cathode of the LED string to this pin. If unused, connect FB2 to LGND.
LED Current Sink Ground.
Regulated Current Sink. Connect the bottom cathode of the LED string to this pin. If unused, connect FB3 to LGND.
Regulated Current Sink. Connect the bottom cathode of the LED string to this pin. If unused, connect FB4 to LGND.
Overvoltage Protection. The boost converter output is connected to this pin with a resistor divider.
Power Ground.
Ramp Compensation Pin.
Current Sense Input. Allows the current sensing to control the boost converter and to limit the switching current.
Switching MOSFET Gate Low Driving Pin.
Switching MOSFET Gate High Driving Pin.
Analog Ground.
Exposed Pad. Connect the exposed pad to ground.
Rev. 0 | Page 7 of 20
ADD5211
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
112
1.8
110
1.6
106
1.4
104
1.2
ΔIFB100 (%)
ILED100 (mA)
108
102
100
98
1.0
0.8
96
0.6
94
0.4
92
0.2
5
15
25
35
45
55
65
75
85
95
TEMPERATURE (°C)
0
–35 –25 –15 –5
10555-004
88
–35 –25 –15 –5
15
25
35
45
55
65
75
85
95
TEMPERATURE (°C)
Figure 7. ΔIFB100 vs. Temperature
Figure 4. ILED100 vs. Temperature
22
6.0
20
5.5
18
5.0
16
VDR VOLTAGE (V)
14
12
TA = –25°C
10
8
TA = +85°C
4.5
4.0
3.5
3.0
4
2.5
2
2.0
0
5
10
15
20
25
30
35
40
45
50
55
FB VOLTAGE (V)
1.5
10555-006
0
0
5
10
15
30V/DIV
40
VFB2
20V/DIV
20V/DIV
2
VFB3
PWM
20V/DIV
3
3V/DIV
VFB4
IFB
100mA/DIV
1ms/DIV
4
10555-008
4
35
20V/DIV
1
VFB
3
30
VFB1
VSW
2
25
Figure 8. VDR Voltage vs. Input Voltage
Figure 5. FB Leakage Current vs. FB Voltage
1
20
INPUT VOLTAGE (V)
10555-007
6
20V/DIV
1ms/DIV
Figure 9. FB1 to FB4 Waveforms, PWM Duty Cycle = 50%
Figure 6. PWM Dimming Waveform, PWM Duty Cycle = 50%
Rev. 0 | Page 8 of 20
10555-009
FB LEAKAGE CURRENT (µA)
5
10555-005
90
Data Sheet
ADD5211
1
30V/DIV
VFB
VFB
20V/DIV
2
20V/DIV
EN
EN
3V/DIV
3
3V/DIV
3
20V/DIV
4
20ms/DIV
VIN
10555-010
VIN
20V/DIV
4
20ms/DIV
Figure 10. Startup (Brightness = 100%, EN Is High,
VIN Goes from Low to High)
Figure 13. Startup (Brightness = 100%, VIN Is High,
EN Goes from Low to High
VSW
VSW
30V/DIV
1
30V/DIV
1
VFB
VFB
20V/DIV
2
20V/DIV
2
EN
EN
3V/DIV
3
3V/DIV
3
20V/DIV
20ms/DIV
VIN
10555-012
VIN
4
20V/DIV
4
20ms/DIV
Figure 11. Startup (Brightness = 10%, EN Is High,
VIN Goes from Low to High)
Figure 14. Startup (Brightness = 10%, VIN Is High,
EN Goes from Low to High
VFB1
VOUT
30V/DIV
2
10555-011
2
VSW
30V/DIV
10555-013
1
VSW
50V/DIV
1
VFB2
20V/DIV
2
PWM
FAULT
3V/DIV
3V/DIV
3
IFB1
100mA/DIV
5µs/DIV
IFB1
100mA/DIV
4
10555-014
4
Figure 12. LED Current Rising and Falling Waveform
1ms/DIV
Figure 15. LED Open Protection (Open LED on FB2)
Rev. 0 | Page 9 of 20
10555-015
3
ADD5211
Data Sheet
THEORY OF OPERATION
UVLO Pin
The UVLO pin is used to control the VIN voltage at which
the ADD5211 starts up. This function is accomplished using
a resistor divider between the input voltage and the UVLO pin,
as shown in Figure 16.
VIN
CURRENT MODE, STEP-UP SWITCHING
CONTROLLER
RUVLO1
The ADD5211 is a current mode, PWM boost controller
that operates at a fixed switching frequency from 200 kHz to
1.2 MHz. The switching frequency is set by an external resistor
connected from the FREQ pin to AGND. The minimum headroom voltage—which is monitored at the FB1, FB2, FB3, and
FB4 pins—is compared with the internal reference voltage by
the internal transconductance error amplifier to create an error
current at COMP. A resistor and capacitor connected from the
COMP pin to AGND convert the error current to an error
voltage.
At the beginning of the switching cycle, the MOSFET is turned
on and the inductor current ramps up. The MOSFET current is
measured and converted to a voltage using the current sense
resistor (RCS) and is added to the stabilizing slope compensation
ramp from the ramp resistor (RRAMP). The resulting voltage sum
passes through the current sense amplifier to generate the
current sense voltage. Under light loads, the converter can also
operate in discontinuous mode with pulse skip modulation to
maintain output voltage regulation.
The current mode regulation system of the ADD5211 allows
fast transient responses while maintaining a stable output
voltage. By selecting the proper resistor-capacitor network from
COMP to AGND, the regulator response can be optimized for a
wide range of input voltages, output voltages, and load currents.
Input Voltage
The ADD5211 can be powered directly from the VIN pin,
which accepts a voltage from 4.5 V to 40 V. The voltage on the
VIN pin must exceed VUVLOR_VIN (4.0 V typical) for startup. The
ADD5211 has two linear regulators: a 3.3 V linear regulator
(VDD), which supplies power to the internal control circuitry,
and a 5.1 V linear regulator (VDR), which supplies power to the
internal GATE_P and GATE_N drivers.
RUVLO2
UVLO_REF
UVLO
PIN
10555-016
The ADD5211 uses a PWM boost controller to generate the
minimum output voltage required to drive the LED string at the
programmed LED current. The current mode control architecture
allows a fast transient response while maintaining a stable output
voltage. The boost converter provides power to the LED strings,
and the four current sinks control the LED current with dynamic
headroom control to improve efficiency.
Figure 16. Undervoltage Lockout Circuit
The startup voltage, as determined by the resistor divider to the
UVLO pin, can be calculated using the following equation:
VIN(START) = (1.19 V/RUVLO2) × (RUVLO1 + RUVLO2)
To start the device at the lowest possible VIN level, select an
RUVLO1 value of 100 kΩ (or greater) and do not connect RUVLO2.
If UVLO is controlled from a separate voltage source, make sure
that a 100 kΩ (or greater) resistor is in series between the voltage
source and the UVLO pin.
Enable and Disable
To enable the ADD5211, the voltage at the EN pin must be
higher than 2.2 V. To disable the ADD5211, the voltage at the
EN pin must be lower than 0.8 V. An internal 500 kΩ resistor is
connected between EN and AGND.
Internal 3.3 V Regulator (VDD)
The ADD5211 contains a 3.3 V linear regulator (VDD) that is
used to bias the internal control circuitry. The VDD regulator
requires a 1 µF bypass capacitor. Place this bypass capacitor
between VDD and AGND, as close as possible to the VDD pin.
Internal 5.1 V Regulator (VDR)
The ADD5211 contains a 5.1 V linear regulator (VDR) that is
used to supply the MOSFET gate driver. The VDR regulator
requires a 1 µF bypass capacitor. Place this bypass capacitor
between VDR and AGND, as close as possible to the VDR pin.
Rev. 0 | Page 10 of 20
Data Sheet
ADD5211
Frequency
LED CURRENT REGULATION
The ADD5211 boost converter switching frequency (fSW) is user
adjustable from 200 kHz to 1.2 MHz using an external resistor,
RFREQ (see Figure 17).
Current Sink
1000
If the ADD5211 current sink voltage is greater than 45 V, a
Zener diode and a 410 kΩ resistor in parallel with the current
sink are activated (see Figure 18).
800
Programming the LED Current
600
As shown in Figure 22, the ADD5211 has an LED current set pin
(ISET). A resistor (RSET) from the ISET pin to AGND adjusts the
LED current from 40 mA to 200 mA. The LED current level can
be set using the following equation:
400
200
0
20
10
30
40
50
60
70
80
RFREQ (kΩ)
90
100
10555-017
ILED (mA) = 1500/RSET (kΩ)
0
The resulting minimum current sink voltage (FB_REF) is given by
FB_REF = 0.23 + 0.0041 × ILED (mA)
Figure 17. Switching Frequency vs. RFREQ
The following equation can also be used to calculate the typical
switching frequency:
f SW (kHz) =
19,000
RFREQ (k Ω)
−
30,000
(RFREQ (k Ω))2
Soft Start
At startup, the voltage at the SS pin ramps up slowly by charging
the soft start capacitor (CSS) from an internal 2.1 μA (typical)
current source. The peak inductor current follows the SS pin ramp
to provide a controlled start-up profile. The soft start cycle is
complete when the SS pin reaches its final value of 1.19 V (typical).
A capacitor must always be connected to the SS pin. The soft
start time can be calculated as follows:
tSS = (CSS × 1.19 V)/2.1 µA
For a typical setup, a 27 nF soft start capacitor results in negligible input current overshoot at startup, making it suitable for
most applications. However, if an unusually large output capacitor
is used, a longer soft start period is required to prevent input inrush
current and output voltage overshoot of the boost switching regulator. Conversely, if fast startup is required, the value of the soft
start capacitor can be reduced to allow the boost output to start
quickly, but allow greater peak switch current during startup and
larger boost output overshoot.
where 40 mA < ILED < 200 mA.
If only one or two LED strings are used, it is most efficient to
connect the FBx pins in parallel and adjust RSET accordingly.
This configuration gives the lowest VFB operating voltage and
improves efficiency. For example, to drive two LED strings at
100 mA, connect FB1 and FB2 together for one LED string, and
connect FB3 and FB4 together for the other LED string. Then,
set RSET to 30.1 kΩ (50 mA). The minimum FBx voltage is now
0.44 V (typical) instead of 0.64 V (typical). See Figure 23 for an
example of a two-string application.
PWM Dimming Control
The ADD5211 features LED brightness control using an external
PWM signal applied at the PWM pin. A logic high signal on the
PWM input enables the LED current sinks; a logic low signal
disables them. If the PWM input remains low for 50 ms, the
ADD5211 stops boost regulation and enters shutdown mode. If
the PWM input returns high after the ADD5211 enters shutdown,
the device initiates a new soft start sequence.
FBx
CURRENT CONTROL
410kΩ
VZ = 45V
DIMMING CONTROL
LGND
Figure 18. Current Sink Circuit
Rev. 0 | Page 11 of 20
10555-018
SWITCHING FREQUENCY (kHz)
1200
The ADD5211 contains four current sinks to provide accurate
current sinking for each LED string. The current for each LED
string is adjusted from 40 mA to 200 mA using an external
resistor. Connect any unused FBx pins to LGND.
ADD5211
Data Sheet
FAULT PROTECTION
Fault protections in the ADD5211 include boost output overvoltage protection, LED short protection, LED open protection,
boost output short-circuit protection, and thermal shutdown.
The FAULT pin provides an alert for some of these conditions
(see Table 7).
The LED short protection threshold can be calculated using the
following equations:
VLSD = (3.3 V/(RLSD1 + RLSD2)) × RLSD2
VLED_SHORT_THRESHOLD = 10 × VLSD
To disable LED short protection, set the voltage of the LSD pin
to a value greater than 3 V, or connect the pin to the VDD pin.
Boost Output Overvoltage Protection (OVP)
LED Open Protection
The ADD5211 contains an overvoltage protection (OVP) circuit to prevent potential damage if the output voltage becomes
excessive for any reason. OVP is implemented with a resistor
divider from the boost output to the OVP pin. When the OVP
pin voltage reaches 2.5 V (typical), the boost controller stops
switching, which causes the output voltage and the OVP pin
voltage to decrease. When the OVP pin voltage decreases below
the OVP falling threshold (2.4 V typical), the boost converter
resumes switching.
The ADD5211 contains a headroom control circuit to minimize
power loss at each current sink. Therefore, the minimum feedback
voltage is achieved by regulating the output voltage of the boost
converter. If any LED string is open circuit during normal operation, the current sink voltage (VFBx) will be near 0 V. LED open
protection is activated if VFBx is less than 100 mV (typical) and the
boost converter output voltage reaches VOUT_OVP. The ADD5211
then disables the open LED string and pulls the open-drain fault
indicator low. The remaining LED strings continue to operate
normally. If all LED strings are open, the ADD5211 shuts down.
BOOST OUTPUT
Boost Output Short-Circuit Protection (SCP)
OVP_REF
ROVP2
10555-019
OVP
OVP
Figure 19. Boost Output Overvoltage Protection Circuit
The OVP threshold can be calculated using the following equation:
The ADD5211 contains an SCP circuit to prevent boost converter
damage if the Schottky diode becomes open or the boost converter
output is shorted to ground for any reason. When the voltage on
the OVP pin falls below 100 mV (typical), the boost converter
stops switching until the OVP voltage rises to 150 mV (typical).
The SCP function is disabled during boost converter soft start.
VOUT_OVP = (2.5 V/ROVP2) × (ROVP1 + ROVP2)
BOOST OUTPUT
LED Short Protection
If an LED in one of the LED strings is shorted, the voltage of the
FBx pin that is connected to the faulty LED string increases to
regulate the LED current. If this FBx pin reaches the LED short
protection threshold (10× the voltage at the LSD pin) during normal operation, the ADD5211 disables the FBx pin that is connected
to the shorted LED string and pulls down the FAULT pin.
VDD
ROVP1
SCP_REF
SCP
ROVP2
OVP
10555-021
ROVP1
Figure 21. Boost Output Short-Circuit Protection Circuit
The boost output short-circuit protection threshold can be
calculated using the following equation:
VOUT_SCP = (0.15 V/ROVP2) × (ROVP1 + ROVP2)
LSD_REF
×10
RLSD2
LSD
Thermal Shutdown (TSD)
LSD ENABLE
SHORT
STRING
DETECTOR
FBx
10555-020
RLSD1
Thermal overload protection prevents excessive power dissipation from overheating and damaging the ADD5211. When the
junction temperature (TJ) exceeds 150°C (typical), a thermal
sensor immediately activates the fault protection, which shuts
down the device and allows it to cool. The device restarts when
the junction temperature (TJ) of the die falls below 125°C (typical).
Figure 20. LED Short Protection Circuit
Rev. 0 | Page 12 of 20
Data Sheet
ADD5211
Table 7. Fault Protection
Fault
Boost output overvoltage
LED string short
Description
VOVP > OVP_REF
VFBx > 10 × VLSD; PWM pin is high
LED string open
VFBx < 0.1 V; VOVP > OVP_REF; PWM pin is high
RSET short to AGND
RSET is shorted to AGND
Boost output short
VOVP < 100 mV (typical) after soft start
Thermal shutdown
TJ > 150°C (typical)
Boost Regulation Response
Stop switching until VOVP < 2.4 V (typical)
Shorted LED string disabled; other LED
strings operate normally
Open LED string disabled; other LED strings
operate normally
ADD5211 shuts down; automatic restart if
RSET returns to normal resistance range
ADD5211 shuts down; automatic restart if
VOVP rises above 150 mV (typical)
ADD5211 shuts down; automatic restart
after TJ falls below 125°C (typical)
Rev. 0 | Page 13 of 20
FAULT Pin State
Open
Pulled down
Pulled down
Open
Pulled down
Pulled down
ADD5211
Data Sheet
APPLICATIONS INFORMATION
LAYOUT GUIDELINES
To achieve high efficiency, good regulation, and stability, a good
PCB layout is required. Use the following general guidelines when
designing PCBs:






Ensure that the high current loop from CIN to L1 to Q1 to
RCS then back to the ground of CIN is as short as possible.
Ensure that the high current loop from CIN to L1 to D1 to
COUT then back to the ground of CIN is as short as possible.
Make high current traces as short and wide as possible.
Keep nodes that are connected to L1, Q1, and D1 away
from sensitive traces, such as COMP, to prevent coupling
of the traces. If such traces must be run near each other,
place a ground trace between the two as a shield.
Place the compensation components as close as possible
to the COMP pin.
Use thermal vias and a thermal pad with the same dimensions as the exposed pad on the bottom of the package.
Heat Sinking
When using a surface-mount power IC or external power
switches, the PCB can often be used as the heat sink. This
is achieved by using the copper area of the PCB to transfer
heat from the device; maximizing this area optimizes thermal
performance.
BOOST COMPONENT SELECTION
Verify that the worst-case duty cycle does not exceed the maximum allowed value (89%) given in Table 2. For the worst-case
duty cycle, use the minimum VIN and the maximum VOUT. The
maximum VOUT is given by
VOUT_MAX = N × VF MAX + 1 V
where:
N is the number of LEDs per string.
VF MAX is the maximum LED forward voltage.
Selecting the Inductor
When selecting the inductor, consider these inductor properties:
inductance, maximum saturation current, resistance (DCR),
and physical size.
Choose an inductance such that ΔIL is 20% to 40% of IL (AVG).
L=
IPK = IL (AVG) + (ΔIL/2)
where:
ΔIL = (VIN × D)/(L × fSW)
IL (AVG) = (4 × ILED)/(η × (1 − D))
ILED is the LED current per string.
D is the duty cycle (D = (VOUT − VIN)/VOUT).
0.3  f SW  I OUT
where IOUT is the total LED current through all the strings.
The saturation current is generally listed as the current at which
the inductance is reduced by 30%. Ensure that this current is
greater than the calculated peak inductor current.
Of the inductors that meet the required inductance and saturation
current, choose one that provides the best trade-off between DCR
and layout footprint for your application. The power dissipation
due to the DCR of the inductor is given by
Calculating the Peak Inductor Current and Duty Cycle
To select the optimal external components, the first step is
to calculate the peak inductor current and maximum duty
cycle. The peak inductor current is given by
VIN  D  (1  D)
PL = DCR × IL (AVG)2
Selecting the Current Sense (CS) Resistor
To calculate the worst-case inductor peak current, use the
maximum duty cycle, minimum inductance, and minimum
switching frequency. Then select the current sense resistor (RCS)
as follows:
RCS = CSLIMIT (MIN)/IPK (MAX)
Ensure that the selected inductor can tolerate the maximum
peak current given by this current sense resistor.
IPK (CS) = CSLIMIT (MAX)/RCS (MIN)
The power dissipation from the sense resistor is given by
PRCS = D × RCS × IL (AVG)2
Rev. 0 | Page 14 of 20
Data Sheet
ADD5211
Selecting the NMOS Switch
The equation for GP (s) shows that there are two zeros (fZESR and
fRHP). The fZESR zero is formed by the ESR of the output capacitance.
Because ceramic capacitors are used in this application, this value
should be small and can usually be ignored. The zero is given by
The external NMOS switch must have an adequate drain-tosource breakdown voltage (BVDSS) and rms current rating. The
breakdown voltage rating should be at least
BVDSS > VOUT (MAX) + 10 V
f ZESR =
The rms current rating should exceed the following:
2 × π × ESR × COUT
The right half plane zero (fRHP) is given by
INMOS (RMS) = IL (AVG) × √D
The power dissipation from the NMOS switch arises from two
components: RDSON losses and switching losses. These losses
can be calculated as follows:
f RHP =
PNMOS (SW) = 0.5 × VOUT × IL (AVG) × (tR + tF) × fSW
The rise and fall times (tR and tF) are a function of the strength
of the ADD5211 gate drivers and the gate capacitance of the
NMOS. Typical values are given in Table 2, but these times vary
substantially for various power FETs. Therefore, tR and tF are best
measured in the application.
2 × π × L × 4 × I LED
 V
×  IN
V
 OUT




2
GP (s) also gives two poles at fLFP and fn. The low frequency pole
(fLFP) is formed by the output capacitance and is found at
Selecting the Diode
f LFP =
The diode must be selected for a low forward voltage (VF) and
fast switching times. Generally, a fast Schottky diode provides
the best performance for the cost. Ensure that the breakdown
voltage (VD) is greater than the maximum VOUT plus some margin.
Also ensure that the rated current of the diode is greater than the
output current (total LED current). The power dissipation of the
diode is as follows:
4 × I LED
π × VOUT × COUT
fn is the double pole formed by the current sense sampling action.
It is always located at half the switching frequency.
The fn double pole becomes unstable if Qn (the quality factor) is
not sufficiently damped. Qn is damped by adding external ramp
compensation (Se).
PDIODE = VF × IOUT
Qn =
Selecting COUT
To provide stability and reduce the output voltage ripple, particularly when PWM dimming of the LED currents is in effect, the
output capacitance should be in the range of 4.7 µF to 22 µF.
1

S 
π ×  − D + 0.5 + (1 − D) × e 

Sn 

where:
Se is the external ramp compensation = 75% × ((VOUT − VIN)/L).
Sn is the inductor up slope = VIN/L.
Boost Converter Loop Gain Calculations
The total closed-loop gain is given by GEA × GP (s). GEA is the
compensation gain. GP (s) is the control to output gain. GP (s) is
the gain of the power stage and includes L, COUT, and the PWM
modulator. The GP (s) gain is
The external ramp compensation slope is usually set to a value
from 50% to 75% of the inductor down slope as reflected across
the sense resistor. Given the wide variation in parameters, it is
best to stay closer to 75%.
GP (s) =

 

s
s
1 +
 × 1 −


 

2
2
f
f
×
π
×
×
π
×
RHP 
ZESR 


APS ×

 
s
s
s2
1 +
 × 1 +
+

2 × π × f LFP  
(2 × π × f n )2
Qn × 2 × π × f n

VOUT
This RHP zero results in a gain boost, but a phase drop. Because
of its dependence on so many variables, fRHP is extremely difficult
to compensate for. Therefore, it is best to choose a loop crossover
frequency well before the phase drop of this RHP zero is seen.
Typically, this is an order of magnitude less than the frequency
of the RHP zero.
PNMOS (RDSON) = D × RDSON × IL (AVG)2
RRAMP (Ω) =




where APS is the dc gain and includes the PWM modulator gain,
as follows:
APS =
1
(1 − D) × VOUT × GCS
2 × RCS × 4 × I LED
Rev. 0 | Page 15 of 20
3
4
×
RCS × (VOUT − VIN )
45 µ A × f SW × L
ADD5211
Data Sheet
Compensation Component Selection
To increase the crossover frequency (beyond the LFP frequency),
some kind of phase boost is required. Because the ADD5211
operates in current mode, only one zero is needed to counteract
fLFP. Therefore, a Type II compensator should be sufficient. This
compensator (see Figure 2) has a gain, GEA, that is expressed as
follows:
G EA =
VFB
VOUT
× gm ×
s × RC × CC + 1
s × CC
GEA gives one zero and one pole at the origin, as follows:
fzEA = 1/(2π × RC × CC)
fpEA = 1/(2π × RO × CC)
where RO is the output impedance of the error amplifier.
To boost the phase and increase the crossover frequency, place
the compensation zero (fzEA) at or near the LFP pole. This placement gives the following equation for CC:
CC =
VOUT × COUT
2 × RC × I OUT
These values may need to be adjusted experimentally to achieve
satisfactory phase margin over all operating conditions and tolerances. Table 8 provides recommended values for switching
frequencies of 360 kHz and 1 MHz.
Table 8. Recommended Values for Compensation Components
fSW (kHz)
360
1000
Rev. 0 | Page 16 of 20
L (µH)
33
22
COUT (µF)
10
4.7
RRAMP (kΩ)
6.81
6.81
RC (Ω)
100
100
CC (µF)
2.2
1.0
Data Sheet
ADD5211
TYPICAL APPLICATION CIRCUITS
L1
33µH
VIN
+ CIN
10µF
COUT
10µF
CIN2
0.1µF
CVDR
1µF
UVLO
VDR
Q1
VIN GATE_P GATE_N
CS
RAMP
OFF ON
RRAMP
6.8kΩ
RCS
0.1Ω
EN
PGND
ROVP1
560kΩ
PWM
VDD
RFLT
100kΩ
OVP
FAULT
ROVP2
16kΩ
ADD5211
VDD
FB4
CVDD
1µF
RLSD1
24kΩ
FB3
FB2
LSD
RLSD2
4.7kΩ
22 LEDs/CH, 100mA/CH
D1
FB1
ISET
LGND
AGND
FREQ COMP
RFREQ
49.9kΩ
SS
CSS
30nF
RC
100Ω
CC
2.2µF
10555-022
RSET
15kΩ
Figure 22. Typical Four-String Application Circuit
L1
33µH
CIN2
0.1µF
UVLO
CVDR
1µF
Q1
VIN GATE_P GATE_N
CS
VDR
RAMP
OFF ON
RRAMP
6.8kΩ
RCS
0.1Ω
EN
PGND
PWM
VDD
RFLT
100kΩ
FAULT
ROVP2
16kΩ
FB4
CVDD
1µF
FB3
FB2
LSD
RLSD2
4.7kΩ
ROVP1
560kΩ
OVP
ADD5211
VDD
RLSD1
24kΩ
22 LEDs/CH, 100mA/CH
COUT
10µF
FB1
ISET
RSET
30.1kΩ
LGND
AGND
FREQ COMP
RFREQ
49.9kΩ
SS
RC
100Ω
CC
2.2µF
CSS
30nF
Figure 23. Typical Two-String Application Circuit
Rev. 0 | Page 17 of 20
10555-023
VIN
D1
+ CIN
10µF
ADD5211
Data Sheet
OUTLINE DIMENSIONS
PIN 1
INDICATOR
4.10
4.00 SQ
3.90
0.30
0.25
0.18
0.50
BSC
PIN 1
INDICATOR
24
19
18
1
2.65
2.50 SQ
2.45
EXPOSED
PAD
TOP VIEW
0.80
0.75
0.70
0.50
0.40
0.30
13
12
0.25 MIN
BOTTOM VIEW
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SEATING
PLANE
6
7
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
COMPLIANT TO JEDEC STANDARDS MO-220-WGGD.
112108-A
0.20 REF
Figure 24. 24-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
4 mm × 4 mm Body, Very Very Thin Quad
(CP-24-7)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADD5211ACPZ-R7
ADD5211ACPZ-RL
ADD5211CP-EVALZ
1
Temperature Range
−40°C to +125°C
−40°C to +125°C
Package Description
24-Lead LFCSP_WQ, 7” Tape and Reel
24-Lead LFCSP_WQ, 13” Tape and Reel
Evaluation Board and LED Array
Z = RoHS Compliant Part.
Rev. 0 | Page 18 of 20
Package Option
CP-24-7
CP-24-7
Data Sheet
ADD5211
NOTES
Rev. 0 | Page 19 of 20
ADD5211
Data Sheet
NOTES
©2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D10555-0-10/13(0)
Rev. 0 | Page 20 of 20