Si2333DS-RC

Si2333DS_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
65.0615
N/A
RT2
47.9253
N/A
RT3
41.1729
N/A
RT4
9.6980
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
1.1655
N/A
CT2
17.3479 m
N/A
CT3
3.0586 m
N/A
CT4
582.7750 µ
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73622
Revision 22-Aug-05
www.vishay.com
1
Si2333DS_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RF1
30.1437
N/A
RF2
57.6679
N/A
RF3
21.8656
N/A
55.0958
N/A
RF4
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CF1
853.4095 µ
N/A
CF2
4.6627 m
N/A
CF3
187.5234 m
N/A
CF4
1.4173
N/A
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com
2
Document Number: 73622
Revision 22-Aug-05
Si2333DS_RC
Vishay Siliconix
Document Number: 73622
Revision 22-Aug-05
www.vishay.com
3