Si2333DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case RT1 65.0615 N/A RT2 47.9253 N/A RT3 41.1729 N/A RT4 9.6980 N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case CT1 1.1655 N/A CT2 17.3479 m N/A CT3 3.0586 m N/A CT4 582.7750 µ N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73622 Revision 22-Aug-05 www.vishay.com 1 Si2333DS_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case RF1 30.1437 N/A RF2 57.6679 N/A RF3 21.8656 N/A 55.0958 N/A RF4 Thermal Capacitance (Joules/°C) Junction to Ambient Case CF1 853.4095 µ N/A CF2 4.6627 m N/A CF3 187.5234 m N/A CF4 1.4173 N/A Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73622 Revision 22-Aug-05 Si2333DS_RC Vishay Siliconix Document Number: 73622 Revision 22-Aug-05 www.vishay.com 3